arXiv subjects

Bernard Plaçais

Publications and source records attributed to Bernard Plaçais.

At least 19 recordsLinked to original sources

arXiv2026

Growth of Highly Conductive PtSe2 Films Controlled by Raman Metrics for High-Frequency Photodetectors and Optoelectronic Mixers at 1.55 μm

Two-dimensional PtSe2 exhibits outstanding intrinsic properties such as high carrier mobility, tunable bandgap, broadband absorption and air stability, making it ideal for (opto)electronic applications. In particular, thick PtSe2 is semimetallic and well suited for ultrafast optoelectronics in the infrared domain. However, achieving PtSe2 films of high crystalline quality with controlled properties on low-cost and insulating substrates remains challenging. Here, highly crystalline semimetallic PtSe2 films are grown by molecular beam epitaxy on sapphire substrates. It is shown how an optimized post-growth annealing remarkably improves the out-of-plane crystallinity and leads to record sheet conductances, up to 1.6 mS. In-depth structural analyses reveal the strong influence of the domain arrangement within the films on their electrical properties. Films that are mainly composed of vertically single crystalline domains exhibit high sheet conductance (1.1 - 1.6 mS), whereas films that contain superimposed twisted domains present low sheet conductance (0.5 - 0.6 mS). Moreover, it is demonstrated that the A1g Raman peak width, in addition to the commonly used Eg peak width, are both effective metrics for evaluating the quality of PtSe2: films with narrower Eg and A1g peaks exhibit higher in-plane and out-of-plane crystalline quality, respectively, as well as higher sheet conductance. Finally, coplanar waveguides integrating a semimetallic PtSe2 channel are fabricated on a 2-inch sapphire substrate to demonstrate optoelectronic devices operating at the 1.55 μm telecom wavelength. This includes photodetectors with a record 60 GHz bandwidth and the first PtSe2-based optoelectronic mixer with a bandwidth above 30 GHz.

cond-mat.mtrl-sci↗

arXiv2024

Time-domain braiding of anyons

Contrary to fermions and bosons, anyons are quasiparticles that keep a robust memory of particle exchanges via a braiding phase factor. This provides them with unique dynamical properties so far unexplored. When an anyon excitation is emitted toward a quantum point contact (QPC) in a fractional quantum Hall (FQH) fluid, this memory translates into tunneling events that may occur long after the anyon excitation has exited the QPC. Here, we use triggered anyon pulses incident on a QPC in a $ν= 1/3$ FQH fluid to investigate anyon tunneling in the time domain. We observe that braiding increases the tunneling timescale, which is set by the temperature and the anyon scaling dimension that characterizes the edge state dynamics. This contrasts with the electron behavior where braiding is absent and the tunneling timescale is set by the temporal width of the generated electron pulses. Our experiment introduces time-domain measurements for characterizing the braiding phase and scaling dimension of anyons.

cond-mat.mes-hall↗

arXiv2024

The optical absorption in indirect semiconductor to semimetal PtSe2 arises from direct transitions

$\rm{PtSe_2}$ is a van der Waals material transitioning from an indirect bandgap semiconductor to a semimetal with increasing thickness. Its absorption threshold has been conjectured to originate from interband indirect transitions. By quantitative comparison between broadband ($0.8 - 3.0\,\rm{eV}$) optical absorption of high-quality exfoliated crystals and DFT ab-initio simulations, we prove instead that the optical absorption arises only from direct transitions. This understanding allows us to shed light on the semiconductor to semimetal transition and to explore the effect of stacking and excitons on the optical absorption.

cond-mat.mtrl-sci↗

arXiv2024

Quantum transport signature of strain-induced scalar and pseudo-vector potentials in a crenellated hBN-graphene heterostructure

The sharp Dirac cone of the electronic dispersion confers to graphene a remarkable sensitivity to strain. It is usually encoded in scalar and pseudo-vector potentials, induced by the modification of hopping parameters, which have given rise to new phenomena at the nanoscale such as giant pseudomagnetic fields and valley polarization. Here, we unveil the effect of these potentials on the quantum transport across a succession of strain-induced barriers. We use high-mobility, hBN-encapsulated graphene, transferred over a large (10x10 $μ$m$^{2}$) crenellated hBN substrate. We show the emergence of a broad resistance ancillary peak at positive energy that arises from Klein tunneling barriers induced by the tensile strain at the trench edges. Our theoretical study, in quantitative agreement with experiment, highlights the balanced contributions of strain-induced scalar and pseudo-vector potentials on ballistic transport. Our results establish crenellated van der Waals heterostructures as a promising platform for strain engineering in view of applications and basic physics.

cond-mat.mes-hall↗

arXiv2024

Raman spectroscopy of monolayer to bulk PtSe2 exfoliated crystals

Raman spectroscopy is widely used to assess the quality of 2D materials thin films. This report focuses on $\rm{PtSe_2}$, a noble transition metal dichalcogenide which has the remarkable property to transit from a semi-conductor to a semi-metal with increasing layer number. While polycrystalline $\rm{PtSe_2}$ can be grown with various crystalline qualities, getting insight into the monocrystalline intrinsic properties remains challenging. We report on the study of exfoliated 1 to 10 layers $\rm{PtSe_2}$ by Raman spectroscopy, featuring record linewidth. The clear Raman signatures allow layer-thickness identification and provides a reference metrics to assess crystal quality of grown films.

cond-mat.mtrl-sci↗

arXiv2023

Velocity and confinement of edge plasmons in HgTe-based 2D topological insulators

High-frequency transport in the edge states of the quantum spin Hall (QSH) effect has to date rarely been explored, though it could cast light on the scattering mechanisms taking place therein. We here report on the measurement of the plasmon velocity in topological HgTe quantum wells both in the QSH and quantum Hall (QH) regimes, using harmonic GHz excitations and phase-resolved detection. We observe low plasmon velocities corresponding to large transverse widths, which we ascribe to the prominent influence of charge puddles forming in the vicinity of edge channels. Together with other recent works, it suggests that puddles play an essential role in the edge state physics and probably constitute a main hurdle on the way to clean and robust edge transport.

cond-mat.mes-hall↗

arXiv2021

The 2021 Quantum Materials Roadmap

In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.

cond-mat.mes-hall↗

arXiv2020

Characterization of helical Luttinger liquids in microwave stepped-impedance edge resonators

Coulomb interaction has important consequences on the physics of quantum spin Hall edge states, weakening the topological protection via two-particle scattering and renormalizing both the velocity and charge of collective plasmon modes compared to that of free electrons. Despite these effects, interactions remain difficult to quantify. We propose here simple and robust edge resonator geometries to characterize Coulomb interaction by means of high-frequency measurements. They rely on a transmission line approach, and take advantage of the impedance mismatch between the edge states and their microwave environment.

cond-mat.mes-hall↗

arXiv2019

RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors

The topological state that emerges at the surface of a topological insulator (TI) and at the TI-substrate interface are studied in metal-hBN-Bi2Se3 capacitors. By measuring the RF admittance of the capacitors versus gate voltage, we extract the compressibility of the Dirac state located at a gated TI surface. We show that even in the presence of an ungated surface that hosts a trivial electron accumulation layer, the other gated surface always exhibits an ambipolar effect in the quantum capacitance. We succeed in determining the velocity of surface Dirac fermions in two devices, one with a passivated surface and the other with a free surface that hosts trivial states. Our results demonstrate the potential of RF quantum capacitance techniques to probe surface states of systems in the presence of a parasitic density-of-states.

cond-mat.mes-hall↗

arXiv2019

Dynamical separation of bulk and edge transport in HgTe-based 2D topological insulators

Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the responses of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales, and suggests that edge states can be addressed selectively on timescales over which bulk carriers are frozen.

cond-mat.mes-hall↗

arXiv2019

Layering transitions in superfluid helium adsorbed on a carbon nanotube mechanical resonator

Helium is recognized as a model system for the study of phase transitions. Of particular interest is the superfluid phase in two dimensions. We report measurements on superfluid helium films adsorbed on the surface of a suspended carbon nanotube. We measure the mechanical vibrations of the nanotube to probe the adsorbed helium film. We demonstrate the formation of helium layers up to five atoms thickness. Upon increasing the vapour pressure, we observe layer-by-layer growth with discontinuities in both the number of adsorbed atoms and the speed of sound in the adsorbed film. These hitherto unobserved discontinuities point to a series of first-order layering transitions. Our results show that helium multilayers adsorbed on a nanotube are of unprecedented quality compared to previous works. They pave the way to new studies of quantized superfluid vortex dynamics on cylindrical surfaces, of the Berezinskii-Kosterlitz-Thouless phase transition in this new geometry, perhaps also to supersolidity in crystalline single layers as predicted in quantum Monte Carlo calculations.

cond-mat.mes-hall↗

arXiv2018

Importance of non-local electron correlations in BaNiS$_{2}$ semimetal from quantum oscillations studies

By means of Shubnikov-de-Haas and de-Haas-van-Alphen oscillations, and ab initio calculations, we have studied the Fermi surface of high-quality BaNiS$_2$ single crystals, with mean free path $l \sim 400 ~\textÅ$. The angle and temperature dependence of quantum oscillations indicates a quasi-two-dimensional Fermi surface, made of an electron-like tube centred at $Γ$, and of 4 hole-like cones, generated by Dirac bands, weakly dispersive in the out-of-plane direction. Ab initio electronic structure calculations, in the density functional theory framework, show that the inclusion of screened exchange is necessary to account for the experimental Fermi pockets. Therefore, the choice of the functional becomes crucial. A modified HSE hybrid functional with 7% of exact exchange outperforms both GGA and GGA+U density functionals, signalling the importance of non-local screened-exchange interactions in BaNiS$_2$, and, more generally, in $3d$ compensated semimetals.

cond-mat.mtrl-sci↗

arXiv2017

Dirac fermion reflector by ballistic graphene sawtooth-shaped npn junctions

We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the first straight np interface works as a collimator and the collimated ballistic carriers can be totally reflected at the second zigzag pn interface. We observed clear resistance enhancement around the np+n regime, which is in good agreement with the numerical simulation. The tunable reflectance of ballistic carriers could be an elementary and important step for realizing ultrahigh-mobility graphene field effect transistors utilizing Dirac fermion optics in the near future.

cond-mat.mes-hall↗

arXiv2016

Two-particle interferometry in quantum Hall edge channels

Since pioneering works of Hanbury-Brown and Twiss, intensity-intensity correlations have been widely used in astronomical systems, for example to detect binary stars. They reveal statistics effects and two-particle interference, and offer a decoherence-free probe of the coherence properties of light sources. In the quantum Hall edge channels, the concept of quantum optics can transposed to electrons, and an analogous two-particle interferometry can be developed, in order to characterize single-electron states. We review in this article the recent experimental and theoretical progress on this topic.

cond-mat.mes-hall↗

arXiv2016

Dimensionality effects on the luminescence properties of hBN

Cathodoluminescence (CL) experiments at low temperature have been undertaken on various bulk and exfoliated hexagonal boron nitride (hBN) samples. Different bulk crystals grown from different synthesis methods have been studied. All of them present the same so-called S series in the 5.6--6 eV range, proving its intrinsic character. Luminescence spectra of flakes containing 100 down to 6 layers have been recorded. Strong modifications in the same UV range are observed and discussed within the general framework of 2D exciton properties in lamellar crystals.

cond-mat.mtrl-sci↗

arXiv2014

Electron-optical phonon coupling in suspended bilayer graphene

Using electrical transport experiments and shot noise thermometry, we investigate electron-phonon heat transfer rate in a suspended bilayer graphene. Contrary to monolayer graphene with heat flow via three-body supercollision scattering, we find that regular electron - optical phonon scattering in bilayer graphene provides the dominant scattering process at electron energies $ \gtrsim 0.15$ eV. We determine the strength of these intrinsic heat flow processes of bilayer graphene and find good agreement with theoretical estimates when both zone edge and zone center optical phonons are taken into account.

cond-mat.mes-hall↗

arXiv2014

Klein-tunneling transistor with ballistic graphene

Today the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistor in the ballistic regime gives access to the Klein tunneling physics and allows the realization of devices exploiting the optics-like behavior of Dirac Fermions (DF) as in the Vesalego lens or the Fabry Pérot cavity. Here we propose a Klein tunneling transistor based on geometrical optics of DF. We consider the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, which leads to the tunable suppression of the transistor transmission. We calculate the transmission and the current by means of scattering theory and the finite bias properties using Non Equilibrium Green's Function(NEGF) simulation.

cond-mat.mes-hall↗

arXiv2014

Excitonic recombinations in hBN: from bulk to exfoliated layers

Hexagonal boron nitride (h-BN) and graphite are structurally similar but with very different properties. Their combination in graphene-based devices meets now a huge research focus, and it becomes particularly important to evaluate the role played by crystalline defects in them. In this work, the cathodoluminescence (CL) properties of hexagonal boron nitride crystallites are reported and compared to those of nanosheets mechanically exfoliated from them. First the link between the presence of structural defects and the recombination intensity of bound-excitons, the so-called D series, is confirmed. Low defective h-BN regions are further evidenced by CL spectral mapping (hyperspectral imaging), allowing us to observe new features in the near-band-edge region, tentatively attributed to phonon replica of exciton recombinations. Second the h-BN thickness was reduced down to six atomic layers, using mechanical exfoliation, as evidenced by atomic force microscopy. Even at these low thicknesses, the luminescence remains intense and exciton recombination energies are not strongly modified with respect to the bulk, as expected from theoretical calculations indicating extremely compact excitons in h-BN.

cond-mat.mtrl-sci↗