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Bernard Plaçais

Publications and source records attributed to Bernard Plaçais.

25 records · Page 2Linked to original sources

A Coherent RC Circuit

We review the first experiment on dynamic transport in a phase-coherent quantum conductor. In our discussion, we highlight the use of time-dependent transport as a means of gaining insight into charge relaxation on a mesoscopic scale. For this purpose, we studied the ac conductance of a model quantum conductor, i.e. the quantum RC circuit. Prior to our experimental work, M. Büttiker, H. Thomas and A. Prêtre first worked on dynamic mesoscopic transport in the 1990s. They predicted that the mesoscopic RC circuit can be described by a quantum capacitance related to the density of states in the capacitor and a constant charge relaxation resistance value equal to half of the resistance quantum h/2e^2, when a single mode is transmitted between the capacitance and a reservoir. By applying a microwave excitation to a gate located on top of a coherent submicronic quantum dot that is coupled to a reservoir, we validate this theoretical prediction on the ac conductance of the quantum RC circuit. Our study demonstrates that the ac conductance is directly related to the dwell time of electrons in the capacitor. Thereby, we observed a counterintuitive behavior of a quantum origin: as the transmission of the single conducting mode decreases, the resistance of the quantum RC circuit remains constant while the capacitance oscillates.

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Single electron quantum tomography in quantum Hall edge channels

We propose a quantum tomography protocol to measure single electron coherence in quantum Hall edge channels and therefore access for the first time the wave function of single electron excitations propagating in ballistic quantum conductors. Its implementation would open the way to quantitative studies of single electron decoherence and would provide a quantitative tool for analyzing single to few electron sources. We show how this protocol could be implemented using ultrahigh sensitivity noise measurement schemes.

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A high sensitivity ultra-low temperature RF conductance and noise measurement setup

We report on the realization of a high sensitivity RF noise measurement scheme to study small current fluctuations of mesoscopic systems at milliKelvin temperatures. The setup relies on the combination of an interferometric ampli- fication scheme and a quarter-wave impedance transformer, allowing the mea- surement of noise power spectral densities with GHz bandwith up to five orders of magnitude below the amplifier noise floor. We simultaneously measure the high frequency conductance of the sample by derivating a portion of the signal to a microwave homodyne detection. We describe the principle of the setup, as well as its implementation and calibration. Finally, we show that our setup allows to fully characterize a subnanosecond on-demand single electron source. More generally, its sensitivity and bandwith make it suitable for applications manipulating single charges at GHz frequencies.

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Subnanosecond single electron source in the time-domain

We describe here the realization of a single electron source similar to single photon sources in optics. On-demand single electron injection is obtained using a quantum dot connected to the conductor via a tunnel barrier of variable transmission (quantum point contact). Electron emission is triggered by a sudden change of the dot potential which brings a single energy level above the Fermi energy in the conductor. A single charge is emitted on an average time ranging from 100 ps to 10 ns ultimately determined by the barrier transparency and the dot charging energy. The average single electron emission process is recorded with a 0.5 ns time resolution using a real-time fast acquisition card. Single electron signals are compared tosimulation based on scattering theory approach adapted for finite excitation energies.

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An On-Demand Coherent Single Electron Source

We report on the electron analog of the single photon gun. On demand single electron injection in a quantum conductor was obtained using a quantum dot connected to the conductor via a tunnel barrier. Electron emission is triggered by application of a potential step which compensates the dot charging energy. Depending on the barrier transparency the quantum emission time ranges from 0.1 to 10 nanoseconds. The single electron source should prove useful for the implementation of quantum bits in ballistic conductors. Additionally periodic sequences of single electron emission and absorption generate a quantized AC-current.

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The relaxation time of a chiral quantum R-L circuit

We report on the GHz complex admittance of a chiral one dimensional ballistic conductor formed by edge states in the quantum Hall regime. The circuit consists of a wide Hall bar (the inductor L) in series with a tunable resistor (R) formed by a quantum point contact. Electron interactions between edges are screened by a pair of side gates. Conductance steps are observed on both real and imaginary parts of the admittance. Remarkably, the phase of the admittance is transmission-independent. This shows that the relaxation time of a chiral R-L circuit is resistance independent. A current and charge conserving scattering theory is presented that accounts for this observation with a relaxation time given by the electronic transit time in the c cuit.

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Violation of Kirchhoff's Laws for a Coherent RC Circuit

What is the complex impedance of a fully coherent quantum resistance-capacitance (RC) circuit at GHz frequencies in which a resistor and a capacitor are connected in series? While Kirchhoff's laws predict addition of capacitor and resistor impedances, we report on observation of a different behavior. The resistance, here associated with charge relaxation, differs from the usual transport resistance given by the Landauer formula. In particular, for a single mode conductor, the charge relaxation resistance is half the resistance quantum, regardless of the transmission of the mode. The new mesoscopic effect reported here is relevant for the dynamical regime of all quantum devices.

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