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Bert Koopmans

Publications and source records attributed to Bert Koopmans.

At least 19 recordsLinked to original sources

Stable magnetic nanodomains engineered via Ga+-ion irradiation for deterministic sequential switching

Precise control of magnetic domain formation at the nanoscale remains constrained by stochastic defect-mediated and unstable pinning, limiting scalability and reproducibility in spintronic architectures. Here we demonstrate that spatially engineered anisotropy gradients provide a deterministic alternative. Using focused Ga+-ion irradiation, we pattern magnetic energy landscapes containing nanoscale "anisotropy wells" that confine magnetic domain walls and enable bidirectional sequential switching without reliance on difficult-to-control material disorder. An analytical framework describing domain-wall energetics in graded anisotropy profiles yields predictive design rules for depinning and stability, which are supported by micromagnetic simulations and experiments. We realize programmable multi-domain configurations in continuous ferromagnetic films and demonstrate robust, reproducible switching of 750 nm regions, while first results for 100 nm are shown, approaching the theoretical limit set by the domain-wall width. By replacing unstable pinning with engineered energy landscapes, this anisotropy landscape establishes a scalable materials strategy for deterministic magnetic-state programming and opens a pathway toward dense, energy-efficient spintronic and reconfigurable magnetic nanodevices.

cond-mat.mes-hall

The Multi-Scale Dynamics of All-Optical Exchange Bias Reversal

Pinning magnetization in a ferromagnetic thin film is commonly realized through exchange biasing with an adjacent antiferromagnet. Field-cooling from above the N\'{e}el temperature is a reliable yet slow re-pinning method in exchange-biased systems. For on-demand reprogrammable devices, localized and rapid exchange bias repinning methods are essential. Recent work has shown that femtosecond laser pulses enable field-free reversal of exchange bias in tailored multilayer stacks. Contrary to field-cooling, our experiments with ultrafast excitation reach hitherto unexplored regimes in the exchange bias setting process. Here, we unravel these observations by considering both ultrafast magnetization dynamics on the femto- to picosecond timescale and slow heat-driven dynamics on millisecond timescales and upwards. We develop a microscopic framework of exchange bias setting in a polycrystalline antiferromagnetic thin film like IrMn that provides a complete description of the observations in our present experiments and those found in literature. We expand the use of our model by identifying material platforms and stack designs that lead to optimized performance, aiding further development of optically reprogrammable devices.

cond-mat.mes-hall

Facilitating electrical and laser-induced skyrmion nucleation with a dipolar-field enhanced effective DMI

We demonstrate experimentally how the nucleation of skyrmions in an Ir, Co, and Pt based magnetic multilayer is affected by introducing a layer dependent sign for the Dzyaloshinskii-Moriya interaction (DMI). In one stack, the bottom half of the stack is given a positive DMI and the top half a negative DMI, and as a result, the in-plane component of the dipolar field is aligned parallel to the effective field of the DMI in every layer, enhancing the effective DMI. We show that this enhanced DMI facilitates the nucleation and stability of skyrmions using both current-driven and laser-induced skyrmion nucleation. In the devices with an enhanced effective DMI, the density of nucleated skyrmions is greater by up to a factor 20 and skyrmions can be observed in stronger magnetic fields - suggesting that their stability is also improved. These results show that skyrmion nucleation depends strongly on the magnitude of the effective DMI in a magnetic multilayer and that the dipolar field within such a multilayer presents an effective route towards controlling the effective DMI, and thereby, the nucleation of chiral magnetic textures.

cond-mat.mtrl-sci

Demonstration of on-chip all-optical switching of magnetization in integrated photonics

Ultrafast all-optical magnetization switching (AOS) holds great promise for nextgeneration spintronic memory and hybrid spintronic-photonic systems. However, most implementations to date rely on bulky free-space optical setups, limiting scalability and practical integration. As a critical step toward integrated applications, we demonstrate single-pulse AOS within a silicon nitride (Si3N4) photonic integrated circuit. Using trains of femtosecond laser pulses guided through on-chip waveguides, we achieve deterministic toggle switching in a sub-micron out-of-plane Co/Gd Hall cross patterned directly atop the photonic waveguide. Electrical readout via the anomalous Hall effect reveals a switching contrast of up to 90% for 500 nm-wide devices. In larger Hall crosses, the contrast decreases and switching becomes stochastic, consistent with spatially non-uniform optical absorption as confirmed by finite-element simulations. This behavior is hypothetically attributed to domain wall relaxation and thermally assisted (de)pinning processes within partially switched regions. Our results highlight the critical role of device scaling in achieving robust on-chip AOS and establish a foundation for ultrafast, energy-efficient, and fully integrated spintronic-photonic platforms.

physics.optics

Single femtosecond laser pulse-driven ferromagnetic switching

Light pulses offer a faster, more energy-efficient, and direct route to magnetic bit writing, pointing toward a hybrid memory and computing paradigm based on photon transmission and spin retention. Yet progress remains hindered, as deterministic, single-pulse optical toggle switching has so far been achieved only with ferrimagnetic materials, which require too specific a rare-earth composition and temperature conditions for technological use. In mainstream ferromagnet--central to spintronic memory and storage--such bistable switching is considered fundamentally difficult, as laser-induced heating does not inherently break time-reversal symmetry. Here, we report coherent magnetization switching in ferromagnets, driven by thermal anisotropy torque with single laser pulses. The toggle switching behavior is robust over a broad range of pulse durations, from femtoseconds to picoseconds, a prerequisite for practical applications. Furthermore, the phenomenon exhibits reproducibility in CoFeB/MgO-based magnetic tunnel junctions with a high magnetoresistance exceeding 110%, as well as the scalability down to nanoscales with remarkable energy efficiency (17 fJ per 100-nm-sized bit). These results mark a notable step toward integrating opto-spintronics into next-generation memory and storage technologies.

cond-mat.mes-hall

Synthetic Altermagnets

Altermagnets, a distinct class of antiferromagnets with electronic structures resembling those of d-wave superconductors, exhibit intriguing properties that have gained significant attention in recent research. In this article, we propose synthetic altermagnets, composed of two anisotropic ferromagnetic layers arranged such that the total net magnetization is zero. We investigate the properties of these synthetic altermagnets, focusing on their electronic band structures, spin current, Berry curvature, and anomalous Hall conductivity. By developing a minimal model for our synthetic altermagnets, we examine the influence of factors such as anisotropic coupling strengths and spin-orbit coupling on the physical phenomena altermagnets manifest. Our findings open a new path for the realization of altermagnetic materials experimentally and highlight their potential applications in magneto-electronics, magneto-optics, and spintronics devices.

cond-mat.mtrl-sci

Understanding Field-Free Single-Shot Laser-Induced Reversal of Exchange Bias

Exchange bias is applied ubiquitously throughout the spintronics industry for pinning magnetic moment in an orientation robust against external magnetic field disturbances. Enabling efficient manipulation of the exchange-biased pinning direction is key to add or advance device functionality. Conventional methods for achieving this reorientation commonly require long heating times and assisting magnetic fields, thus limiting speed and versatility. Here, we demonstrate a field-free $180^\circ$ reorientation of perpendicular exchange bias in a thin film system integrating Co/Gd layers with IrMn. Single femtosecond laser pulses trigger a reversal of the pinning direction, while preserving the unidirectionality required for referencing. We formulate a theoretical microscopic framework involving a wide range of timescales that accurately reproduces the experimental outcomes. The understanding of the underlying mechanisms delivers guiding principles for designing reprogrammable spintronic devices.

cond-mat.mes-hall

Picosecond all-optical switching of Co/Gd based synthetic ferrimagnets

Single pulse all-optical switching of magnetization (AOS) in Co/Gd based synthetic ferrimagnets carries promises for hybrid spintronic-photonic integration. A crucial next step progressing towards this vision is to gain insight into AOS and multi-domain state (MDS) behavior using longer pulses, which is compatible with state-of-the-art integrated photonics. In this work, we present our studies on the AOS and MDS of [Co/Gd]n (n = 1, 2) using ps optical pulses across a large composition range. We theoretically and experimentally show that a large Gd layer thickness can enhance the AOS energy efficiency and maximum pulse duration. We have identified two augmenting roles of Gd in extending the maximum pulse duration. On the inter-atomic level, we found that more Gd offers a prolonged angular momentum supply to Co. On the micromagnetic level, a higher Gd content brings the system to be closer to magnetic compensation in the equilibrized hot state, thereby reducing the driving force for thermally assisted nucleation of domain walls, combating the formation of a MDS. Our study presents a composition overview of AOS in [Co/Gd]n and offers useful physical insights regarding AOS fundamentals as well as the projected photonic integration.

cond-mat.mes-hall

Interlayer Dzyaloshinskii-Moriya interaction in synthetic ferrimagnets

The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin interaction provides a new dimension for controlling spin textures and dynamics. However, the role of IL-DMI in the field induced and spin-orbit torque (SOT) induced switching of synthetic ferrimagnets (SFi) has not been uncovered. Here, we exploit interlayer chiral exchange bias fields in SFi to address both the sign and magnitude of the IL-DMI. Depending on the degree of imbalance between the two magnetic moments of the SFi, the amount of asymmetry, addressed via loop shifts of the hysteresis loops under an in-plane field reveals a unidirectional and chiral nature of the IL-DMI. The devices are then tested with SOT switching experiments and the process is examined via both transient state and steady state detection. In addition to field-free SOT switching, we find that the combination of IL-DMI and SOT give rise to multi-resistance states, which provides a possible direction for the future design of neuromorphic computing devices based on SOT. This work is a step towards characterizing and understanding the IL-DMI for spintronic applications.

physics.app-ph

Coherent control of terahertz-scale spin resonances using optical spin-orbit torques

Using optically generated spin-orbit torques induced by the heavy metal Pt we demonstrate coherent control of GHz ferromagnetic resonances in Pt/Co/Pt multilayers as well as sub-THz exchange resonances in [Gd/Co]$_2$ multilayers. Employing a double-pump setup, we show that depending on the helicities of the pump pulses, spin resonances can either be coherently amplified or suppressed if the time delay between the arrival of the pump beams is chosen appropriately. Furthermore, investigating phase and amplitude of the exchange-driven modes, we identify features that challenge the current understanding of optically generated spin-orbit torques, and we discuss possible explanations.

cond-mat.mes-hall

Explaining all-optical switching in ferrimagnets with heavy rare-earth elements by varying the spin-flip scattering probability of Gd in Co$_x$Gd$_{100-x}$ alloys and Co/Gd bilayers

Using the microscopic three temperature model, we simulate single-pulse all-optical switching (AOS) in alloys and bilayers consisting of Co and Gd. In particular, we investigate its dependence on the spin-flip probability of Gd $a_\mathrm{sf,Gd}$, a material parameter describing the strength of spin-phonon coupling. We do so to elucidate the mechanisms behind all-optical switching in systems where Co is coupled to heavy rare-earth elements with higher damping such as Tb. In alloys, our observations are twofold. First, an increase of $a_\mathrm{sf,Gd}$ leads to a broadening of the range of compositions for which AOS is observed. Second, the ideal Co content is decreased as $a_\mathrm{sf,Gd}$ is varied. For bilayers, our analysis indicates that switching is most efficient when $a_\mathrm{sf,Gd}$ takes on small values. Conversely, increasing the value of $a_\mathrm{sf,Gd}$ leads to a general suppression of AOS. Comparing alloys to bilayers, we find that AOS in alloys exhibits greater resilience to variations in $a_\mathrm{sf,Gd}$ than it does in bilayers.

cond-mat.mes-hall

Understanding voltage-controlled magnetic anisotropy effect for the manipulation of dipolar-dominated propagating spin waves

Spin waves, known for their ability to propagate without the involvement of moving charges, hold immense promise for on-chip information transfer and processing, offering a path toward post-CMOS computing technologies. This study investigates the potential synergy between propagating Damon-Eshbach spin waves and voltage-controlled magnetization in the pursuit of environmentally sustainable computing solutions. Employing micromagnetic simulations, we assess the feasibility of utilizing spin waves in DE mode in conjunction with localized voltage-induced alterations in surface anisotropy to enable low-energy logic operations. Our findings underscore the critical importance of selecting an optimal excitation frequency and gate width, which significantly influence the efficiency of the phase shift induced in propagating spin waves. Notably, we demonstrate that a realistic phase shift of 2.5$\left[ \pi \ \text{mrad}\right]$ can be achieved at a Co(5nm)/MgO material system via the VCMA effect. Moreover, by tuning the excitation frequency, Co layer thickness, gate width, and the use of a GdO\textsubscript{x} dielectric, we illustrate the potential to enhance the phase shift by a factor of 200 when compared to MgO dielectrics. This research contributes valuable insights towards developing next-generation computing technologies with reduced energy consumption.

physics.app-ph

Integrated magneto-photonic non-volatile multi-bit memory

We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions which are perpendicularly magnetized with all-optically switchable free layers, coupled onto photonic crystal nanobeam cavities on an indium phosphide based platform. This device enables switching of the magnetization state of the bits by locally increasing the power absorption of light at resonance with the cavity. We design an add/drop network of cavities to grant random access to multiple bits via a wavelength-division multiplexing scheme. Based on a three-dimensional finite-difference time-domain method, we numerically illustrate a compact device capable of switching and accessing 8 bits in different cavities with a 5 nm wavelength spacing in the conventional (C) telecommunication band. Our multi-bit device holds promise as a new paradigm for developing an ultrafast photonically-addressable spintronic memory and may also empower novel opportunities for photonically-driven spintronic-based neuromorphic computing.

physics.optics

Electric control of optically-induced magnetization dynamics in a van der Waals ferromagnetic semiconductor

Electric control of magnetization dynamics in two-dimensional (2D) magnetic materials is an essential step for the development of novel spintronic nanodevices. Electrostatic gating has been shown to greatly affect the static magnetic properties of some van der Waals magnets, but the control over their magnetization dynamics is still largely unexplored. Here we show that the optically-induced magnetization dynamics in the van der Waals ferromagnet Cr$_2$Ge$_2$Te$_6$ can be effectively controlled by electrostatic gates, with a one order of magnitude change in the precession amplitude and over 10% change in the internal effective field. In contrast to the purely thermally-induced mechanisms previously reported for 2D magnets, we find that coherent opto-magnetic phenomena play a major role in the excitation of magnetization dynamics in Cr$_2$Ge$_2$Te$_6$. Our work sets the first steps towards electric control over the magnetization dynamics in 2D ferromagnetic semiconductors, demonstrating their potential for applications in ultrafast opto-magnonic devices.

cond-mat.mes-hall

Ultrafast single-pulse all-optical switching in synthetic ferrimagnetic Tb/Co/Gd multilayers

In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers in an attempt to establish AOS in synthetic ferrimagnets with high perpendicular magnetic anisotropy. In particular, we study the effect of varying Tb thicknesses to disentangle the role of the two rare earth elements. Even though the role of magnetic compensation has been considered to be crucial, we find that the threshold fluence for switching is largely independent of the Tb content. Moreover, we identify the timescale for the magnetization to cross zero to be within the first ps after laser excitation using time-resolved MOKE. We conclude that the switching is governed mostly by interactions between Co and Gd.

cond-mat.mes-hall

Ultralow power and shifting-discretized magnetic racetrack memory device driven by chirality switching and spin current

Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered as one of the most promising candidates for future high-density on-chip solid state memory. However, the lack of a fast and precise magnetic domain wall (DW) shifting mechanism and the required extremely high DW motion (DWM) driving current both make the racetrack difficult to commercialize. Here, we propose a method for coherent DWM that is free from above issues, which is driven by chirality switching (CS) and an ultralow spin-orbit-torque (SOT) current. The CS, as the driving force of DWM, is achieved by the sign change of DM interaction which is further induced by a ferroelectric switching voltage. The SOT is used to break the symmetry when the magnetic moment is rotated to the Bloch direction. We numerically investigate the underlying principle and the effect of key parameters on the DWM through micromagnetic simulations. Under the CS mechanism, a fast (102 m/s), ultralow energy (5 attojoule), and precisely discretized DWM can be achieved. Considering that skyrmions with topological protection and smaller size are also promising for future racetrack, we similarly evaluate the feasibility of applying such a CS mechanism to a skyrmion. However, we find that the CS only causes it to "breathe" instead of moving. Our results demonstrate that the CS strategy is suitable for future DW racetrack memory with ultralow power consumption and discretized DWM.

cond-mat.mes-hall

Impacts of the half-skyrmion spin topology, spin-orbit torque, and dynamic symmetry breaking on the growth of magnetic stripe domains

We have performed an experimental and modeling-based study of the spin-orbit torque-induced growth of magnetic stripe domains in heavy metal/ferromagnet thin-film heterostructures that possess chiral N\'eel-type domain walls due to an interfacial Dzyaloshinskii-Moriya interaction. In agreement with previous reports, the stripe domains stabilized in these systems exhibit a significant transverse growth velocity relative to the applied current axis. This behavior has previously been attributed to the Magnus force-like skyrmion Hall effect of the stripe domain spin topology, which is analogous to that of a half-skyrmion. However, through analytic modeling of the in-plane torques generated by spin-orbit torque, we find that a dynamical reconfiguration of the domain wall magnetization profile is expected to occur - promoting motion with similar directionality and symmetry as the skyrmion Hall effect. These results further highlight the sensitivity of spin-orbit torque to the local orientation of the domain wall magnetization profile and its contribution to domain growth directionality.

cond-mat.mes-hall

Exploring terahertz-scale exchange resonances in synthetic ferrimagnets with ultrashort optically induced spin currents

Using spin currents generated by fs laser pulses, we demonstrate excitation of GHz ferromagnetic resonance and THz ferrimagnetic exchange resonances in Co/Gd/Co/Gd multilayers by time-resolved magneto-optic Kerr effect measurements. Varying the Gd layer thickness allows for a tuning of the resonance spectrum by manipulating the total angular momentum and strength of effective exchange fields between the antiferromagnetically coupled layers. Close to the compensation point of angular momentum, a minimum in the frequency of the exchange-dominated mode and a maximum in the frequency of the ferromagnetic resonance mode is observed. Finally, to gain better understanding of the excitation mechanism, we analyze the anomalous variation in the measured exchange mode amplitude as a function of its frequency. A peak in this amplitude in the vicinity of the compensation point of angular momentum is explained using a macrospin model, taking nonlinear effects at finite precession amplitudes into account.

cond-mat.mes-hall