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Bert Koopmans

Publications and source records attributed to Bert Koopmans.

At least 37 records · Page 2Linked to original sources

Strain effects on magnetic compensation and spin reorientation transition of Co/Gd synthetic ferrimagnets

Synthetic ferrimagnets are an attractive materials class for spintronics as they provide access to all-optical switching of magnetization and, at the same time, allow for ultrafast domain wall motion at angular momentum compensation. In this work, we systematically study the effects of strain on the perpendicular magnetic anisotropy and magnetization compensation of Co/Gd and Co/Gd/Co/Gd synthetic ferrimagnets. Firstly, the spin reorientation transition of a bilayer system is investigated in wedge type samples, where we report an increase in the perpendicular magnetic anisotropy in the presence of in-plane strain. Using a model for magnetostatics and spin reorientation transition in this type of system, we confirm that the observed changes in anisotropy field are mainly due to the Co magnetoelastic anisotropy. Secondly, the magnetization compensation of a quadlayer is studied. We find that magnetization compensation of this synthetic ferrimagnetic system is not altered by external strain. This confirms the resilience of this material system against strain that may be induced during the integration process, making Co/Gd ferrimagnets suitable candidates for spintronics applications.

cond-mat.mtrl-sci↗

Controlling magnetic skyrmion nucleation with Ga+ ion irradiation

In this paper, we show that magnetic skyrmion nucleation can be controlled using Ga+ ion irradiation, which manipulates the magnetic interface effects (in particular the magnetic anisotropy and Dzyaloshinskii-Moriya interaction) that govern the stability and energy cost of skyrmions in thin film systems. We systematically and quantitatively investigated what effect these changes have on the nucleation of magnetic skyrmions. Our results indicate that the energy cost of skyrmion nucleation can be reduced up to 26% in the studied dose range and that it scales approximately linearly with the square root of the domain-wall energy density. Moreover, the total number of nucleated skyrmions in irradiated devices after nucleation was found to depend linearly on the ion dose and could be doubled compared to nonirradiated devices. These results show that ion irradiation cannot only be used to enable local nucleation of skyrmions, but that it also allows for fine control of the threshold and efficiency of the nucleation process.

cond-mat.mes-hall↗

Switchable-magnetisation planar probe MFM sensor

We present an alternative switching-magnetization magnetic force microscopy (SM- MFM) method using planar tip-on-chip probes. Unlike traditional needle-like tips, the planar probe approach integrates a microdevice near the tip apex with dedicated functionality. Its 1 mm x 1 mm planar surface paves the way for freedom in ultra thin-film engineering and micro-/nano-tailoring for application-oriented tip functionalization. Here, we form a microscale current pathway near the tip end to control tip magnetisation. The chip like probe or planar probe, was applied to study the complex magnetic behaviour of epitaxial transition metal oxide perovskite LaMnO3, which was previously shown to behave as complex material with domains associated with superpara-, antiferro- and ferromagnetism. To this end we successfully imaged an inhomogeneous distribution of weak ferromagnetic islands with a resolution better than 10 nm.

physics.ins-det↗

Broadband Multifunctional Plasmonic Polarization Converter based on Multimode Interference Coupler

We propose a multifunctional integrated plasmonic-photonic polarization converter for polarization demultiplexing in an indium-phosphide membrane on silicon platform. Using a compact 1$\times$4 multimode interference coupler, this device can provide simultaneous half-wave plate and quarter-wave plate (HWP and QWP) functionalities, where the latter generates two quasi-circular polarized beams with opposite spins and topological charges of $l$ = $\pm$1. Our device employs a two-section HWP to obtain a very large conversion efficiency of $\geq$ 91% over the entire C to U telecom bands, while it offers a conversion efficiency of $\geq$ 95% over $\sim$ 86% of the C to U bands. Our device also illustrates QWP functionality, where the transmission contrast between the transverse electric and transverse magnetic modes is $\approx$ 0 dB over the whole C band and 55% of the C to U bands. We expect this device can be a promising building block for the realization of ultracompact on-chip polarization demultiplexing and lab-on-a-chip biosensing platforms. Finally, our proposed device allows the use of the polarization and angular momentum degrees of freedom, which makes it attractive for quantum information processing.

physics.optics↗

Design of an integrated hybrid plasmonic-photonic device for all-optical switching and reading of spintronic memory

We introduce a novel integrated hybrid plasmonic-photonic device for all-optical switching and reading of nanoscale ferrimagnet bits. The racetrack memory made of synthetic ferrimagnetic material with a perpendicular magnetic anisotropy is coupled on to a photonic waveguide onto the indium phosphide membrane on silicon platform. The device which is composed of a double V-shaped gold plasmonic nanoantenna coupled with a photonic crystal cavity can enable switching and reading of the magnetization state in nanoscale magnetic bits by enhancing the absorbed energy density and polar magneto-optical Kerr effect (PMOKE) locally beyond the diffraction limit. Using a three-dimensional finite-difference time-domain method, we numerically show that our device can switch and read the magnetization state in targeted bits down to ~100 nm in the presence of oppositely magnetized background regions in the racetrack with widths of 30 to 120 nm, clearly outperforming a bare photonic waveguide. Our hybrid device tackles the challenges of nonlinear absorption in the waveguide, weak PMOKE, and size mismatch between spintronics and integrated photonics. Thus, it provides missing link between the integrated photonics and nanoscale spintronics, expediting the development of ultrafast and energy efficient advanced on-chip applications.

physics.optics↗

Magnetostatics of Room Temperature Compensated Co/Gd/Co/Gd-based Synthetic Ferrimagnets

Flexibility for interface engineering, and access to all-optical switching of the magnetization, make synthetic ferrimagnets an interesting candidate for advanced opto-spintronic devices. Moreover, due to their layered structure and disordered interfaces they also bear promise for the emerging field of graded magnetic materials. The fastest and most efficient spin-orbit torque driven manipulation of the magnetic order in this material system generally takes place at compensation. Here, we present a systematic experimental and modeling study of the conditions for magnetization compensation and perpendicular magnetic anisotropy in the synthetic ferrimagnetic Co/Gd/Co/Gd system. A model based on partial intermixing at the Co/Gd interfaces of this system has been developed which explains the experiments well, and provides a new tool to understand its magnetic characteristics. More specifically, this work provides new insight in the decay of the Co proximity-induced magnetization in the Gd, and the role the capping layer plays in the Gd magnetization.

cond-mat.mes-hall↗

Spin-polarized hot electron transport versus spin pumping mediated by local heating

A `toy model' - aimed at capturing the essential physics - is presented that jointly describes spin-polarized hot electron transport and spin pumping driven by local heating. These two processes both contribute to spin-current generation in laser-excited magnetic heterostructures. The model is used to compare the two contributions directly. The spin-polarized hot electron current is modeled as one generation of hot electrons with a spin-dependent excitation and relaxation scheme. Upon decay, the excess energy of the hot electrons is transferred to a thermalized electron bath. The elevated electron temperature leads to an increased rate of electron-magnon scattering processes and yields a local accumulation of spin. This process is dubbed as spin pumping by local heating. The built-up spin accumulation is effectively driven out of the ferromagnetic system by (interfacial) electron transport. Within our model, the injected spin current is dominated by the contribution resulting from spin pumping, while the hot electron spin current remains relatively small. We derive that this observation is related to the ratio between the Fermi temperature and Curie temperature, and we show what other fundamental parameters play a role.

cond-mat.mes-hall↗

Optical Reading of Nanoscale Magnetic Bits in an Integrated Photonic Platform

In this paper, we propose a compact integrated hybrid plasmonic-photonic device for optical reading of nanoscale magnetic bits with perpendicular magnetic anisotropy in a magnetic racetrack on top of a photonic waveguide on the indium phosphide membrane on silicon platform. The hybrid device is constructed by coupling a doublet of V-shaped gold plasmonic nanoantennas on top of the indium phosphide waveguide. By taking advantage of the localized surface plasmons, our hybrid device can enable detection of the magnetization state in magnetic bits beyond the diffraction limit of light and enhance the polar magneto-optical Kerr effect (PMOKE). We further illustrate how combining the hybrid device with a plasmonic polarization rotator provides magneto-optical read-out by transforming the PMOKE-induced polarization change into an intensity variation of the waveguide mode. According to the simulation results based on a three-dimensional finite-difference time-domain method, the hybrid device can detect the magnetization states in targeted bits in a magnetic racetrack medium down to ~ 100x100 nm2, regardless of the magnetization state of the rest of the racetrack with a relative intensity contrast of greater than 0.5% for a ~ 200x100 nm2 magnetic bit. We believe our hybrid device can be an enabling technology that can connect integrated photonics with nanoscale spintronics, paving the way toward ultrafast and energy efficient advanced on-chip applications.

physics.optics↗

Enhancing All-Optical Switching of Magnetization by He Ion Irradiation

All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other hand, He ion irradiation has become a promising tool for interface engineering of spintronic material platforms, giving rise to significant modification of magnetic properties. In this paper, we explore the use of He ion irradiation to enhance single pulse AOS of Co/Gd bilayer-based synthetic ferrimagnets. The intermixing of the constituent magnetic layers by He ion irradiation was both numerically simulated and experimentally verified. We theoretically modelled the effects of intermixing on AOS using the layered microscopic 3-temperature model and found that AOS is enhanced significantly by breaking the pristine Co/Gd interface through intermixing. Following this notion, we studied the threshold fluence of AOS as a function of He ion irradiation fluence. We found that the AOS threshold fluence can be reduced by almost 30%. Our study reveals the control of AOS by He ion irradiation, which opens up an industrially compatible approach for local AOS engineering.

cond-mat.mes-hall↗

Probing Laser-Induced Spin-Current Generation in Synthetic Ferrimagnets Using Spin Waves

Several rare-earth transition-metal ferrimagnetic systems exhibit all-optical magnetization switching upon excitation with a femtosecond laser pulse. Although this phenomenon is very promising for future opto-magnetic data storage applications, the role of non-local spin transport in these systems is scarcely understood. Using Co/Gd and Co/Tb bilayers we isolate the contribution of the rare-earth materials to the generated spin currents by using the precessional dynamics they excite in an adjacent ferromagnetic layer as a probe. By measuring THz standing spin-waves as well as GHz homogeneous precessional modes, we probe both the high- and low-frequency components of these spin currents. The low-frequency homogeneous mode indicates a significant contribution of Gd to the spin current, but not from Tb, consistent with the difficulty in achieving all-optical switching in Tb-containing systems. Measurements on the THz frequency spin waves reveal the inability of the rare-earth generated spin currents to excite dynamics at the sub-ps timescale. We present modelling efforts using the $s$-$d$ model, which effectively reproduce our results and allow us to explain the behavior in terms of the temporal profile of the spin current.

cond-mat.mes-hall↗

Anisotropic Laser-Pulse-Induced Magnetization Dynamics in van der Waals Magnet Fe$_3$GeTe$_2$

Femtosecond laser-pulse excitation provides an energy efficient and fast way to control magnetization at the nanoscale, providing great potential for ultrafast next-generation data manipulation and nonvolatile storage devices. Ferromagnetic van der Waals materials have garnered much attention over the past few years due to their low dimensionality, excellent magnetic properties, and large response to external stimuli. Nonetheless, their behaviour upon fs laser-pulse excitation remains largely unexplored. Here, we investigate the ultrafast magnetization dynamics of a thin flake of Fe$_3$GeTe$_2$ (FGT) and extract its intrinsic magnetic properties using a microscopic framework. We find that our data is well described by our modelling, with FGT undergoing a slow two-step demagnetization, and we experimentally extract the spin-relaxation timescale as a function of temperature, magnetic field and excitation fluence. Our observations indicate a large spin-flip probability in agreement with a theoretically expected large spin-orbit coupling, as well as a weak interlayer exchange coupling. The spin-flip probability is found to increase when the magnetization is pulled away from its quantization axis, opening doors to an external control over the spins in this material. Our results provide a deeper understanding of the dynamics van der Waals materials upon fs laser-pulse excitation, paving the way towards two-dimensional materials-based ultrafast spintronics.

cond-mat.mes-hall↗

Enhancing sensitivity in atomic force microscopy for planar tip-on-chip probes

We present a new approach to tuning fork-based atomic force microscopy for utilizing advanced "tip-on-chip" probes with high sensitivity and broad compatibility. Usually, such chip-like probes with a size reaching 2 mm x 2 mm drastically perturb the oscillation of the tuning fork, resulting in poor performance in its intrinsic force sensing. Therefore, restoring initial oscillatory characteristics is necessary for regaining high sensitivity. To this end, we developed a new approach consisting of three basic steps: tuning fork rebalancing, revamping holder-sensor fixation, and electrode reconfiguration. Mass rebalancing allows the tuning fork to recover the frequency and regain high Q-factor values up to 10E4 in air and up to 4 x 10E4 in ultra-high vacuum conditions. The floating-like holder-fixation using soft wires significantly reduces energy dissipation from the mounting elements. Combined with the soft wires, reconfigured electrodes provide electrical access to the chip-like probe without intervening in the force-sensing signal. Finally, our easy-to-implement approach allows converting the atomic force microscopy-tip from a passive tool to a dedicated microdevice with extended functionality.

physics.ins-det↗

Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction

Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit torques (SOTs), an unfavored high external field is conventionally required to break the symmetry. Here, we theoretically and experimentally demonstrate the field-free SOT switching of a perpendicular SAF through the introduction of interlayer Dzyaloshinskii-Moriya interaction (DMI). By macro-spin simulation, we show that the speed of field-free switching increases with the in-plane mirror asymmetry of injected spins. We experimentally observe the existence of interlayer DMI in our SAF sample by an azimuthal angular dependent anomalous Hall measurement. Field-free switching is accomplished in such a sample and the strength of the effective switching field demonstrates its origin from interlayer DMI. Our results provide a new strategy for SAF based high performance SOT devices.

physics.app-ph↗

Ultrafast racetrack based on compensated Co/Gd-based synthetic ferrimagnet with all-optical switching

Spin-orbitronics and single pulse all-optical switching (AOS) of magnetization are two major successes of the rapidly advancing field of nanomagnetism in recent years, with high potential for enabling novel, fast and energy-efficient memory and logic platforms. Fast current-induced domain wall motion (CIDWM) and single shot AOS have been individually demonstrated in different ferrimagnetic alloys. However, the stringent requirement for their composition control makes these alloys challenging materials for wafer-scale production. Here, we simultaneously demonstrate fast CIDWM and energy efficient AOS in a synthetic ferrimagnetic system based on multilayered [Co/Gd/Co/Gd]. We firstly show that AOS is present in its full composition range. We find that current-driven domain wall velocities over 2000 m/s at room temperature, achieved by compensating the total angular momentum through layer thickness tuning. Furthermore, analytical modeling of the CIDWM reveals that Joule heating needs to be treated transiently to properly describe the CIDWM for our sub-ns current pulses. Our studies establish [Co/Gd]-based synthetic ferrimagnets to be a unique materials platform for domain wall devices with access to ultrafast single pulse AOS.

cond-mat.mes-hall↗

Towards high all-optical data writing rates in synthetic ferrimagnets

Although all-optical magnetization switching with fs laser pulses has garnered much technological interest, the ultimate data rates achievable have scarcely been investigated. Recently it has been shown that after a switching event in a GdCo alloy, a second laser pulse arriving 7 ps later can consistently switch the magnetization. However, it is as of yet unknown whether the same holds in layered ferrimagnetic systems, which hold much promise for applications. In this work we investigate the minimum time delay required between two subsequent switching events in synthetic ferrimagnetic Co/Gd bilayers using two fs laser pulses. We experimentally demonstrate that the minimum time delay needed for consistent switching can be as low as 10 ps. Moreover, we demonstrate the importance of engineering heat diffusion away from the magnetic material, as well as control over the laser pulse power. This behavior is reproduced using modelling, where we find that the second switch can occur even when the magnetization is not fully recovered. We further confirm that heat diffusion is a critical factor in reducing the time delay for the second switch, while also confirming a critical dependence on laser power.

cond-mat.mes-hall↗

Modeling ultrafast demagnetization and spin transport: the interplay of spin-polarized electrons and thermal magnons

We theoretically investigate laser-induced spin transport in metallic magnetic heterostructures using an effective spin transport description that treats itinerant electrons and thermal magnons on an equal footing. Electron-magnon scattering is included and taken as the driving force for ultrafast demagnetization. We assume that in the low-fluence limit the magnon system remains in a quasi-equilibrium, allowing a transient nonzero magnon chemical potential. In combination with the diffusive transport equations for the itinerant electrons, the description is used to chart the full spin dynamics within the heterostructure. In agreement with recent experiments, we find that in case the spin-current-receiving material includes an efficient spin dissipation channel, the interfacial spin current becomes directly proportional to the temporal derivative of the magnetization. Based on an analytical calculation, we discuss that other relations between the spin current and magnetization may arise in case the spin-current-receiving material displays inefficient spin-flip scattering. Finally, we discuss the role of (interfacial) magnon transport and show that, a priori, it cannot be neglected. However, its significance strongly depends on the system parameters.

cond-mat.mes-hall↗

State-resolved ultrafast charge and spin dynamics in [Co/Pd] multilayers

We use transient absorption spectroscopy with circularly polarized x-rays to detect laser-excited hole states below the Fermi level and compare their dynamics with that of unoccupied states above the Fermi level in ferromagnetic [Co/Pd] multilayers. While below the Fermi level an instantaneous and significantly stronger demagnetization is observed, above the Fermi level the demagnetization is delayed by 35+/-10 fs. This provides a direct visualization of how ultrafast demagnetization proceeds via initial spin-flip scattering of laser-excited holes to the subsequent formation of spin waves.

cond-mat.mtrl-sci↗

Ultra-low energy threshold engineering for all-optical switching of magnetization in dielectric-coated Co/Gd based synthetic-ferrimagnet

A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a pico-second time scale. Devices based on this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory applications. However, a large portion of the light energy is lost by reflection from the metal thin film as well as transmission to the substrate. In this paper, we explore the use of dielectric coatings to increase the light absorption by the magnetic metal layer based on the principle of constructive interference. We experimentally show that the switching energy oscillates with the dielectric layer thickness following the light interference profile as obtained from theoretical calculations. Furthermore, the switching threshold fluence can be reduced by at least $80\%$ to 0.6 mJ/cm$^2$ using two dielectric SiO$_2$ layers sandwiching the metal stack, which scales to 15 fJ of incident energy for a cell size of $50^2$ nm$^2$.

physics.app-ph↗