arXiv subjects

Bhaskaran Muralidharan

Publications and source records attributed to Bhaskaran Muralidharan.

At least 73 records · Page 4Linked to original sources

arXiv2020

Exact eigenvectors and eigenvalues of the finite Kitaev chain and its topological properties

We present a comprehensive, analytical treatment of the finite Kitaev chain for arbitrary chemical potential. We derive the momentum quantization conditions and present exact analytical formulae for the resulting energy spectrum and eigenstate wave functions, encompassing boundary and bulk states. In accordance with an analysis based on the winding number topological invariant, and as expected from the bulk-edge correspondence, the boundary states are topological in nature. They can have zero, exponentially small or even finite energy. A numerical analysis confirms their robustness against disorder.

cond-mat.mes-hall↗

arXiv2019

Band-pass superlattice magnetic tunnel junctions

Significant scientific and technological progress in the field of spintronics is based on trilayer magnetic tunnel junction devices which principally rely on the physics of single barrier tunneling. While technologically relevant devices have been prototyped, the physics of single barrier tunneling poses ultimate limitations on the performance of magnetic tunnel junction devices. Here, we propose a fresh route toward high performance magnetic tunnel junctions by making electronic analogs of optical phenomena such as anti-reflections and Fabry-Pèrot resonances. The devices we propose feature anti-reflection enabled superlattice heterostructures sandwiched between the fixed and the free ferromagnets of the magnetic tunnel junction structure. Our predictions are based on the non-equilibrium Green's function spin transport formalism coupled self-consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation. Owing to the physics of bandpass spin filtering in the bandpass superlattice magnetic tunnel junction device, we demonstrate an ultra-high boost in the tunnel magneto-resistance (TMR$\approx5\times10^4\%$) and nearly 92% suppression of spin transfer torque switching bias in comparison to a traditional trilayer magnetic tunnel junction device. We rationalize improvised spin transfer torque switching via analysis of the Slonczewski spin current transmission spectra. The proof of concepts presented here can lead to next-generation spintronics device design harvesting the rich physics of superlattice heterostructures and exploiting spintronic analogs of optical phenomena.

cond-mat.mes-hall↗

arXiv2019

Supercurrent Interference in Semiconductor Nanowire Josephson Junctions

Semiconductor-superconductor hybrid systems provide a promising platform for hosting unpaired Majorana fermions towards the realisation of fault-tolerant topological quantum computing. In this study, we employ the Keldysh Non-Equilibrium Green's function formalism to model quantum transport in normal-superconductor junctions. We analyze III-V semiconductor nanowire Josephson junctions (InAs/Nb) using a three-dimensional discrete lattice model described by the Bogolubov-de Gennes Hamiltonian in the tight-binding approximation, and compute the Andreev bound state spectrum and current-phase relations. Recent experiments [Zuo et al., Phys. Rev. Lett. 119,187704 (2017)] and [Gharavi et al., arXiv:1405.7455v2 (2014)] reveal critical current oscillations in these devices, and our simulations confirm these to be an interference effect of the transverse sub-bands in the nanowire. We add disorder to model coherent scattering and study its effect on the critical current oscillations, with an aim to gain a thorough understanding of the experiments. The oscillations in the disordered junction are highly sensitive to the particular realisation of the random disorder potential, and to the gate voltage. A macroscopic current measurement thus gives us information about the microscopic profile of the junction. Finally, we study dephasing in the channel by including elastic phase-breaking interactions. The oscillations thus obtained are in good qualitative agreement with the experimental data, and this signifies the essential role of phase-breaking processes in III-V semiconductor nanowire Josephson junctions.

cond-mat.mes-hall↗

arXiv2019

Semi-classical electronic transport properties of ternary compound AlGaAs$_2$: Role of different scattering mechanisms

We present a comprehensive investigation of semi-classical transport properties of n-type ternary compound AlGaAs2, using Rode's iterative method. Four scattering mechanisms, have been included in our transport calculation, namely, ionized impurity, piezoelectric, acoustic deformation and polar optical phonon (POP). The scattering rates have been calculated in terms of ab-initio parameters. We consider AlGaAs2 to have two distinct crystal geometries, one in tetragonal phase (space group: ), while the other one having body centered tetragonal crystal structure (space group:). We have observed higher electron mobility in the body centered tetragonal phase, thereby making it more suitable for high mobility device application, over the tetragonal phase. In order to understand the differences in electron moblities for these two phases, curvatures of the E-k graph of the conduction bands for these phases have been compared. At room temperature, the dominant contribution in electron mobility was found to be provided by inelastic POP scattering. We have also noted that mobility is underestimated in relaxation time approximation as compared with the Rode's iterative approach.

cond-mat.mtrl-sci↗

arXiv2019

Enhancement of Thermal Spin Transfer Torque via Bandpass Energy Filtering

We propose the use of energy bandpass filtering approach in the magnetic tunnel junction device as a route to enhance the thermal spin transfer torque. Using the spin-resolved non-equilibrium Green's function formalism, we harness the optical analog of anti-reflective coating in a heterostructure MTJ device, that reports a huge spin torque in the linear regime of temperature bias. In particular, we discuss the position of transmission function with respect to the Fermi energy that caters the maximum thermal effect. The boxcar transmission feature of anti-reflective configuration enhances the charge and spin transport through the structure in comparison to the normal superlattice configurations. The thermally excited spin transfer torque is enhanced by almost five times more with our device design. Although, the thermally driven spin torque is much smaller than the potential driven torque, this technique provides an energy-efficient way to switch the magnetization. This opens up a new viable area in the spintronics applications. With the existing advanced thin-film growth technology, the optimized superlattice configurations can be achieved.

cond-mat.mes-hall↗

arXiv2019

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory

We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as anti-reflection coating and resonance for spintronic devices, we present the design of an STT-MRAM device with improved features when compared with a traditional trilayer device. The device consists of a superlattice heterostructure terminated with the anti-reflective regions sandwiched between the fixed and free ferromagnetic layers. Employing the Green's function spin transport formalism coupled self-consistently with the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation, we present the design of an STT-MRAM based on the band-pass filtering having an ultra-high TMR (3.5*10e4) and large spin current. We demonstrate that the STT-MRAM design having band-pass spin filtering are nearly 1100% more energy efficient than traditional trilayer magnetic tunnel junction (MTJ) based STT-MRAM. We also present detailed probabilistic switching and energy analysis for a trilayer MTJ and band-pass filtering based STT-MRAM. Our predictions serve as a template to consider the heterostructures for next-generation spintronic device applications.

cond-mat.mes-hall↗

arXiv2019

Superlattice design for optimal thermoelectric generator performance

We consider the design of an optimal superlattice thermoelectric generator via the energy bandpass filter approach. Various configurations of superlattice structures are explored to obtain a bandpass transmission spectrum that approaches the ideal ``boxcar'' form, which is now well known to manifest the largest efficiency at a given output power. Using the non-equilibrium Green's function formalism coupled self-consistently with the Poisson's equation, we identify such an ideal structure and also demonstrate that it is almost immune to the deleterious effect of self-consistent charging and device variability. Analyzing various superlattice designs, we conclude that superlattices with a Gaussian distribution of the barrier thickness offers the best thermoelectric efficiency at maximum power. It is observed that the best operating regime of this device design provides a maximum power in the range of 0.32-0.46 $MW/m^2$ at efficiencies between 54\%-43\% of Carnot efficiency. We also analyze our device designs with the conventional figure of merit approach to counter support the results so obtained. We note a high $zT_{el}=6$ value in the case of Gaussian distribution of the barrier thickness. With the existing advanced thin-film growth technology, the suggested superlattice structures can be achieved, and such optimized thermoelectric performances can be realized.

cond-mat.mes-hall↗

arXiv2019

Quantum thermoelectrics based on 2-D Semi-Dirac materials

We show that a gap parameter can fully describe the merging of Dirac cones in semi-Dirac materials from $K$- and $K^\prime$-points into the common $M$-point in the Brillouin zone. We predict that the gap parameter manifests itself by enhancing the thermoelectric figure of merit $zT$ as the chemical potential crosses the gap followed by a sign change in the Seebeck coefficient around the same point. Subsequently, we show that there is also a trade-off feature between the maximum power delivered and the efficiency when the chemical potential crosses the gap parameter. An optimal operating point that minimizes the power-efficiency trade-off is consequently singled out for the best thermoelectric performance. Our work paves the way for the use of 2D semi-Dirac materials for thermoelectric applications.

cond-mat.mes-hall↗

arXiv2019

Optimized Fabry-Pérot cavity engineered nanoscale thermoelectric generators

In this work, we aim to design a heterostructure based nanoscale thermoelectric generator that can maximize the waste-heat conversion efficiency at a given output power. The primary objective to be achieved for this is to realize a boxcar-shaped (bandpass) electronic transmission function (R. S. Whitney, Phys. Rev. Lett. 112, 130601 (2014)). In order to achieve that, we propose the use of an electronic analog of optical Fabry-Pérot cavity over a central resonant tunneling structure. We further explore the optimum design possibilities by varying the geometry of the cavity wall to ensure a nearly perfect bandpass energy filtering of electrons. Based on our findings, we propose a general design guideline to realize such transmission and demonstrate that such devices can be excellent thermoelectric generators compared to the existing proposals in terms of boosting the output power without a cost in efficiency. It is theoretically demonstrated using the non-equilibrium Green's function technique coupled with self-consistent charging effects that an enhancement in the maximum output power up to $116\%$ can be achieved through this scheme at a $10\%$ higher efficiency as compared to resonant tunneling based devices. Furthermore, an elaborate comparative study of the linear response parameters is also presented and explained in terms of the physical transport properties. This study suggests an optimal device design strategy for an improved thermoelectric generator and sets the stage for a new class of thermoelectric generators facilitated via transmission lineshape engineering.

cond-mat.mes-hall↗

arXiv2019

Giant enhancement of Piezo-resistance in ballistic graphene due to transverse electric fields

We investigate the longitudinal and transverse piezoresistance effect in suspended graphene in the ballistic regime. Utilizing parametrized tight binding Hamiltonian from ab initio calculations along with Landauer quantum transport formalism, we devise a methodology to evaluate the piezoresistance effect in 2D materials especially in graphene. We evaluate the longitudinal and transverse gauge factor of graphene along armchair and zigzag directions in the linear elastic limit ($0\%$-$10\%$). The longitudinal and transverse gauge factors are identical along armchair and zigzag directions. Our model predicts a significant variation ($\approx 1000\% $ change) in transverse gauge factor compared to longitudinal gauge factor along with sign inversion. The calculated value of longitudinal gauge factor is $\approx 0.3$ whereas the transverse gauge factor is $\approx -3.3$. We rationalize our prediction using deformation of Dirac cone and change in separation between transverse modes due to longitudinal and transverse strain, leading to an inverse change in gauge factor. The results obtained herein may serve as a template for high strain piezoresistance effect of graphene in nano electromechanical systems.

cond-mat.mes-hall↗

arXiv2019

Ab-initio semi-classical electronic transport in ZnSe: The role of inelastic scattering mechanisms

We present a detailed ab-initio study of semi-classical transport in n-ZnSe using Rode's iterative method. Inclusion of ionized impurity, piezoelectric, acoustic deformation and polar optical phonon scattering and their relative importance at low and room temperature for various n-ZnSe samples are discussed in depth. We have clearly noted that inelastic polar optical phonon scattering is the most dominant scattering mechanism over most of the temperature region. Our results are in good agreement with the experimental data for the mobility and conductivity obtained at different doping concentrations over a wider range of temperatures. Also we compare these results with the ones obtained with relaxation time approximation (RTA) which clearly demonstrate the superiority of the iterative method over RTA.

cond-mat.mtrl-sci↗

arXiv2019

Skyrmion Based Spin-Torque Nano-Oscillator

Using micromagnetic simulation, we investigate the self-sustained oscillation of magnetic skyrmion in a ferromagnetic circular nanodot, driven by spin-torque which is generated from a reference layer of a circular nanopillar device. We demonstrate, by lowering the value of uniaxial anisotropy constant ($K_u$), the velocity of the skyrmion can be increased and using this property, gyration frequency of the skyrmion oscillator can be enhanced. Annihilation of the skyrmion at higher current densities, limit the gyration frequency of the oscillator, whereas by modifying the $K_u$ value at the edge of nanodot, we are able to protect the skyrmion from being annihilated at higher current densities which in turn, increases the gyration frequency of the skyrmion based oscillator. By linear fitting the velocity value, obtained from the motion of the skyrmion in a nanostrip, we also predict the gyration frequency of the skyrmion in the nanodot which proves the validity of our idea in an intuitive way. We have also varied the radius of the nanodisk to see its effect on skyrmion.

cond-mat.mes-hall↗

arXiv2019

Energy bandpass filtering in superlattice phase change memories

We propose energy bandpass filtering employed using the idea of anti-reflection heterostructures as a means to reduce the energy requirements of a superlattice phase change memory based on GeTe and Sb$_{2}$Te$_{3}$ heterostructures. Different configurations of GeTe/Sb$_{2}$Te$_{3}$ superlattices are studied using the non-equilibrium Green's function approach. Our electronic transport simulations calculate the coupling parameter for the high resistance covalent state, to $97 \%$ that of the stable low resistance resonant state, maintaining the ON/OFF ratio of 100 for a reliable read operation. By examining various configurations of the superlattice structures we conclude that the inclusion of anti-reflection units on both sides of the superlattice increases the overall ON/OFF ratio by an order of magnitude which can further help in scaling down of the memory device. It is also observed that the device with such anti-reflection units exhibits 32$\%$ lesser RESET voltage than the most common PCM superlattice configurations and 27$\%$ in the presence of elastic dephasing. Moreover, we also find that the ON/OFF ratios in these devices are also resilient to the variations in the periodicity of the superlattice.

cond-mat.mes-hall↗

arXiv2019

Direction dependent giant optical conductivity in 2D \textit{semi}-Dirac materials

We show that the gap parameter in \textit{semi}-Dirac material induces a large degree of sensitivity for inter-band optical conductivity with respect to the polarization direction. The optical conductivity reveals an abruptly large value at a certain frequency for light along a particular polarization direction while it is significantly suppressed along the direction orthogonal to the former. The direction-dependent optical conductivity may, in turn, be used to uniquely predict the dispersive nature of the 2D \textit{semi}-Dirac materials, in addition to other possible applications in the field of transparent conductors.

cond-mat.mes-hall↗

arXiv2018

Manipulation of non-linear heat currents in the dissipative Anderson-Holstein model

The anomalous behavior of electron induced phonon transport is investigated using an Anderson-Holstein based dissipative quantum dot setup under two relevant bias situations: (a) a voltage bias in the absence of an electronic temperature gradient and (b) an electronic temperature gradient at zero voltage. It is shown that the direction of phonon transport in the non-linear regime is different in the two cases since the first case facilitates the accumulation of phonons in the dot and the second case leads to the absorption of phonons in the dot. In the linear regime, both the phonon and electronic transport get decoupled and Onsager's symmetry is verified. We explain the observed cumulative effects of voltage and electronic temperature gradients on the non-linear phonon currents by introducing a new transport coefficient that we term as the \textit{electron induced phonon thermal conductivity}. It is demonstrated that under suitable operating conditions in Case (a) the dot can pump in phonons into the hotter phonon reservoirs and in Case (b) the dot can extract phonons out of the colder phonon reservoirs. Finally, we elaborate on how the non-linear electronic heat current can be stimulated and controlled by engineering the temperature of the phonon reservoirs even under vanishing effective electron flow.

cond-mat.mes-hall↗

arXiv2018

Non-equilibrium Green's function study of magneto-conductance features and oscillations in clean and disordered nanowires

We explore various aspects of magneto-conductance oscillations in semiconductor nanowires, developing quantum transport models based on the non-equilibrium Green's function formalism. In the clean case, Aharonov-Bohm (AB - h/e) oscillations are found to be dominant, contingent upon the surface confinement of electrons in the nanowire. We also numerically study disordered nanowires of finite length, bridging a gap in the existing literature. By varying the nanowire length and disorder strength, we identify the transition where Al'tshuler-Aronov-Spivak (AAS - h/2e) oscillations start dominating, noting the effects of considering an open system. Moreover, we demonstrate how the relative magnitudes of the scattering length and the device dimensions govern the relative dominance of these harmonics with energy, revealing that the AAS oscillations emerge and start dominating from the center of the band, much higher in energy than the conduction band-edge. We also show the ways of suppressing the oscillatory components (AB and AAS) to observe the non-oscillatory weak localization corrections, noting the interplay of scattering, incoherence/dephasing, the geometry of electronic distribution, and orientation of magnetic field. This is followed by a study of surface roughness which shows contrasting effects depending on its strength and type, ranging from magnetic depopulation to strong AAS oscillations. Subsequently, we show that dephasing causes a progressive degradation of the higher harmonics, explaining the re-emergence of the AB component even in long and disordered nanowires. Lastly, we show that our model qualitatively reproduces the experimental magneto-conductance spectrum in [Holloway et al, PRB 91, 045422 (2015)] reasonably well while demonstrating the necessity of spatial-correlations in the disorder potential, and dephasing.

cond-mat.mes-hall↗

arXiv2018

Effects of Elastic Dephasing on Scaling of ultra-small Magnetic Tunnel Junctions

The study of the effects of scaling on magnetic tunnel junction (MTJ) devices has become an important topic in the field of spin-based memory devices. Here, we investigate the effect of elastic dephasing on trilayer and pentalayer MTJ considered at small transverse cross-sectional areas using the non-equilibrium Green's function spin transport formalism. We consider the structures with and without dephasing effects and clearly point out as to how the tunnel magnetoresistance effect gets affected by dephasing. We attribute the trends noted by analyzing the transmission spectra and hence the currents across the devices. Although dephasing affects the TMR values for both devices, we note that the obtained TMR values are still in a reasonable range that may not hinder their usability for practical applications.

cond-mat.mes-hall↗

arXiv2018

Performance analysis of nanostructured Peltier coolers

Employing non-equilibrium quantum transport models, we investigate the details and operating conditions of nano-structured Peltier coolers embedded with an energy filtering barrier. Our investigations point out non-trivial aspects of Peltier cooling which include an inevitable trade-off between the cooling power and the coefficient of performance, the coefficient of performance being high at a low voltage bias and subsequently deteriorating with increasing voltage bias. We point out that there is an optimum energy barrier height for nanowire Peltier coolers at which the cooling performance is optimized. However, for bulk Peltier coolers, the cooling performance is enhanced with the height of the energy filtering barrier. Exploring further, we point out that a degradation in cooling performance with respect to bulk is inevitable as a single moded nanowire transitions to a multi-moded one. The results discussed here can provide theoretical insights for optimal design of nano Peltier coolers.

physics.app-ph↗