arXiv subjects

Bing Xiong

Publications and source records attributed to Bing Xiong.

17 recordsLinked to original sources

arXiv2025

USIGAN: Unbalanced Self-Information Feature Transport for Weakly Paired Image IHC Virtual Staining

Immunohistochemical (IHC) virtual staining is a task that generates virtual IHC images from H\&E images while maintaining pathological semantic consistency with adjacent slices. This task aims to achieve cross-domain mapping between morphological structures and staining patterns through generative models, providing an efficient and cost-effective solution for pathological analysis. However, under weakly paired conditions, spatial heterogeneity between adjacent slices presents significant challenges. This can lead to inaccurate one-to-many mappings and generate results that are inconsistent with the pathological semantics of adjacent slices. To address this issue, we propose a novel unbalanced self-information feature transport for IHC virtual staining, named USIGAN, which extracts global morphological semantics without relying on positional correspondence.By removing weakly paired terms in the joint marginal distribution, we effectively mitigate the impact of weak pairing on joint distributions, thereby significantly improving the content consistency and pathological semantic consistency of the generated results. Moreover, we design the Unbalanced Optimal Transport Consistency (UOT-CTM) mechanism and the Pathology Self-Correspondence (PC-SCM) mechanism to construct correlation matrices between H\&E and generated IHC in image-level and real IHC and generated IHC image sets in intra-group level.. Experiments conducted on two publicly available datasets demonstrate that our method achieves superior performance across multiple clinically significant metrics, such as IoD and Pearson-R correlation, demonstrating better clinical relevance.

cs.CV↗

arXiv2025

Reconfigurable nonlinear optical computing device for retina-inspired computing

Optical neural networks are at the forefront of computational innovation, utilizing photons as the primary carriers of information and employing optical components for computation. However, the fundamental nonlinear optical device in the neural networks is barely satisfied because of its high energy threshold and poor reconfigurability. This paper proposes and demonstrates an optical sigmoid-type nonlinear computation mode of Vertical-Cavity Surface-Emitting Lasers (VCSELs) biased beneath the threshold. The device is programmable by simply adjusting the injection current. The device exhibits sigmoid-type nonlinear performance at a low input optical power ranging from merely 3-250 μW. The tuning sensitivity of the device to the programming current density can be as large as 15 μW*mm2/mA. Deep neural network architecture based on such device has been proposed and demonstrated by simulation on recognizing hand-writing digital dataset, and a 97.3% accuracy has been achieved. A step further, the nonlinear reconfigurability is found to be highly useful to enhance the adaptability of the networks, which is demonstrated by significantly improving the recognition accuracy by 41.76%, 19.2%, and 25.89% of low-contrast hand-writing digital images under high exposure, low exposure, and high random noise respectively.

physics.optics↗

arXiv2024

Unpaired Multi-Domain Histopathology Virtual Staining using Dual Path Prompted Inversion

Virtual staining leverages computer-aided techniques to transfer the style of histochemically stained tissue samples to other staining types. In virtual staining of pathological images, maintaining strict structural consistency is crucial, as these images emphasize structural integrity more than natural images. Even slight structural alterations can lead to deviations in diagnostic semantic information. Furthermore, the unpaired characteristic of virtual staining data may compromise the preservation of pathological diagnostic content. To address these challenges, we propose a dual-path inversion virtual staining method using prompt learning, which optimizes visual prompts to control content and style, while preserving complete pathological diagnostic content. Our proposed inversion technique comprises two key components: (1) Dual Path Prompted Strategy, we utilize a feature adapter function to generate reference images for inversion, providing style templates for input image inversion, called Style Target Path. We utilize the inversion of the input image as the Structural Target path, employing visual prompt images to maintain structural consistency in this path while preserving style information from the style Target path. During the deterministic sampling process, we achieve complete content-style disentanglement through a plug-and-play embedding visual prompt approach. (2) StainPrompt Optimization, where we only optimize the null visual prompt as ``operator'' for dual path inversion, rather than fine-tune pre-trained model. We optimize null visual prompt for structual and style trajectory around pivotal noise on each timestep, ensuring accurate dual-path inversion reconstruction. Extensive evaluations on publicly available multi-domain unpaired staining datasets demonstrate high structural consistency and accurate style transfer results.

eess.IV↗

arXiv2024

D-band MUTC Photodiode Module for Ultra-Wideband 160 Gbps Photonics-Assisted Fiber-THz Integrated Communication System

Current wireless communication systems are increasingly constrained by insufficient bandwidth and limited power output, impeding the achievement of ultra-high-speed data transmission. The terahertz (THz) range offers greater bandwidth, but it also imposes higher requirements on broadband and high-power devices. In this work, we present a modified uni-traveling-carrier photodiode (MUTC-PD) module with WR-6 waveguide output for photonics-assisted fiber-THz integrated wireless communications. Through the optimization of the epitaxial structure and high-impedance coplanar waveguide (CPW), the fabricated 6-um-diameter MUTC-PD achieves a high output power of -0.96 dBm at 150 GHz and ultra-flat frequency response at D-band. The MUTC-PD is subsequently packaged into a compact WR-6 module, incorporating planar-circuit-based RF-choke, DC-block and probe. The packaged PD module demonstrates high saturation power and flat frequency responses with minimal power roll-off of only 2 dB over 110-170 GHz. By incorporating the PD module into a fiber-THz integrated communication system, high data rates of up to 160 Gbps with 16 quadrature amplitude modulation (QAM) and a maximum symbol transmission rate of 60 Gbaud with QPSK modulation are successfully secured. The demonstration verifies the potential of the PD module for ultra-broadband and ultra-high-speed THz communications, setting a foundation for future research in high-speed data transmission.

physics.optics↗

arXiv2024

Ultra-High-Efficiency Dual-Band Thin-Film Lithium Niobate Modulator Incorporating Low-k Underfill with 220 GHz Extrapolated Bandwidth for 390 Gbit/s PAM8 Transmission

High-performance electro-optic modulators play a critical role in modern telecommunication networks and intra-datacenter interconnects. Low driving voltage, large electro-optic bandwidth, compact device size, and multi-band operation ability are essential for various application scenarios, especially energy-efficient high-speed data transmission. However, it is challenging to meet all these requirements simultaneously. Here, we demonstrate a high-performance dual-band thin-film lithium niobate electro-optic modulator with low-k underfill to achieve overall performance improvement. The low-k material helps reduce the RF loss of the modulator and achieve perfect velocity matching with narrow electrode gap to overcome the voltage-bandwidth limitation, extending electro-optic bandwidth and enhancing modulation efficiency simultaneously. The fabricated 7-mm-long modulator exhibits a low half-wave voltage of 1.9 V at C-band and 1.54 V at O-band, featuring a low half-wave voltage-length product of 1.33 V*cm and 1.08 V*cm, respectively. Meanwhile, the novel design yields an ultra-wide extrapolated 3 dB bandwidth of 220 GHz (218 GHz) in the C-band (O-band). High-speed data transmission in both C- and O-bands using the same device has been demonstrated for the first time by PAM8 with data rates up to 390 Gbit/s, corresponding to a record-low energy consumption of 0.69 fJ/bit for next-generation cost-effective ultra-high-speed optical communications.

physics.optics↗

arXiv2023

Suspended AlGaAs-Integrated Nonlinear Photonics

AlGaAs is a promising integrated nonlinear photonics material with enormous optical nonlinearity and high refractive index. Nevertheless, presently AlGaAs microring resonators exhibiting high quality factors and tight optical confinement rely predominantly on wafer bonding techniques, which entail an intricate fabrication process. Here, we present suspended AlGaAs waveguides and resonators as a viable platform for high efficiency integrated nonlinear photonics. The suspended microring resonator formed by combined plasma dry etching and chemical wet etching exhibits an intrinsic quality factor Q of 2.1*106, and Kerr comb generation with milliwatt level threshold is recorded. Our demonstration opens up a new prospect for employing AlGaAs devices in integrated nonlinear photonics.

physics.optics↗

arXiv2021

Low half-wave-voltage, ultra-high bandwidth thin-film LiNbO3 modulator based on hybrid waveguide and periodic capacitively loaded electrodes

A novel thin-film LiNbO3 (TFLN) electro-optic modulator is proposed and demonstrated. LiNbO3-silica hybrid waveguide is adopted to maintain low optical loss for an electrode spacing as narrow as 3 μm, resulting in a record low half-wave-voltage length product of only 1.7 V*cm. Capacitively loaded traveling-wave electrodes (CL-TWEs) are employed to reduce the microwave loss, while quartz substrate is used in place of silicon substrate to achieve velocity matching. The fabricated TFLN modulator with a 5-mm-long modulation region exhibits a half-wave-voltage of 3.4 V and merely 1.3 dB roll-off in electro-optic response up to 67 GHz, and a 3-dB modulation bandwidth over 110 GHz is predicted.

physics.app-ph↗

arXiv2020

Soliton dynamics in microresonators with XPM induced negative thermo-optic effect

Optical frequency comb generation in microresonators has attracted significant attention over the past decade, as it offers the promising potential for chip-scale optical frequency synthesis, optical clocks and precise optical spectroscopy. However, accessing temporal dissipative Kerr soliton (DKSs) is known to be severely hampered by thermal effects. Furthermore, due to the degeneracy of soliton existence range with respect to soliton number, deterministically accessing single soliton state is another challenge. Here, we demonstrate stable and deterministic single soliton generation in AlN-on-sapphire platform via auxiliary laser pumping scheme without the requirement of fast control of the pump power and detuning. Moreover, we reveal the underlying physics of soliton switching in a dual-pumped microcomb, which is fully described by the Lugiato - Lefever equation. The switching process is attributed to cross-phase modulation (XPM) induced degeneracy lifting of the soliton existence range, corresponding to an effective negative thermo-optic effect.

physics.optics↗

arXiv2020

Integrated Gallium Nitride Nonlinear Photonics

Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical applications. Despite its intriguing optical proprieties, nonlinear applications of GaN have rarely been studied due to the relatively high optical loss of GaN waveguides (2 dB/cm). In this letter, we report GaNOI microresonator with intrinsic quality factor over 2 million, corresponding to an optical loss of 0.26 dB/cm. Parametric oscillation threshold power as low as 8.8 mW is demonstrated, and the experimentally extracted nonlinear index of GaN at telecom wavelengths is estimated to be n2 = 1.2*10 -18 m2W-1, which is comparable with silicon. Single soliton generation in GaN is implemented by an auxiliary laser pumping scheme, so as to mitigate the high thermorefractive effect in GaN. The large intrinsic nonlinear refractive index, together with its broadband transparency window and high refractive index contrast, make GaNOI a most balanced platform for chip-scale nonlinear applications.

physics.optics↗

arXiv2019

Data-driven Discovery of Partial Differential Equations for Multiple-Physics Electromagnetic Problem

Deriving governing equations in Electromagnetic (EM) environment based on first principles can be quite tough when there are some unknown sources of noise and other uncertainties in the system. For nonlinear multiple-physics electromagnetic systems, deep learning to solve these problems can achieve high efficiency and accuracy. In this paper, we propose a deep learning neutral network in combination with sparse regression to solve the hidden governing equations in multiple-physics EM problem. Pareto analysis is also adopted to preserve inversion as precise and simple as possible. This proposed network architecture can discover a set of governing partial differential equations (PDEs) based on few temporalspatial samples. The data-driven discovery method for partial differential equations (PDEs) in electromagnetic field may also contribute to solve more sophisticated problem which may not be solved by first principles.

physics.comp-ph↗

arXiv2017

Electrically Pumped Orbital Angular Momentum (OAM) Laser at Telecom Wavelengths

Semiconductor lasers capable of generating a vortex beam with a specific orbital angular momentum (OAM) order are highly attractive for applications ranging from nanoparticle manipulation, imaging and microscopy to fibre and quantum communications. In this work, an electrically pumped OAM laser operating at telecom wavelengths is fabricated by monolithically integrating an optical vortex emitter with a distributed feedback (DFB) laser on the same InGaAsP/InP epitaxial wafer. A single-step dry etching process is adopted to complete the OAM emitter, equipped with specially designed top gratings. The vortex beam emitted by the integrated laser is captured, and its OAM mode purity characterized. The electrically pumped OAM laser eliminates the external laser required by silicon- or silicon-on-insulator (SOI)-based OAM emitters, thus demonstrating great potential for applications in communication systems and quantum domain.

physics.optics↗

arXiv2016

Broadband frequency comb generation in aluminum nitride-on-sapphire microresonators

Development of chip-scale optical frequency comb with the coverage from ultra-violet (UV) to mid-infrared (MIR) wavelength is of great significance. To expand the comb spectrum into the challenging UV region, a material platform with high UV transparency is crucial. In this paper, crystalline aluminum nitride (AlN)-onsapphire film is demonstrated for efficient Kerr frequency comb generation. Near-infrared (NIR) comb with nearly octave-spanning coverage and low parametric threshold is achieved in continuous-wave pumped high-quality-factor AlN microring resonators. The competition between stimulated Raman scattering (SRS) and hyperparametric oscillation is investigated, along with broadband comb generation via Raman-assisted four-wave mixing (FWM). Thanks to its wide bandgap, excellent crystalline quality as well as intrinsic quadratic and cubic susceptibilities, AlN-on-sapphire platform should be appealing for integrated nonlinear optics from MIR to UV region.

physics.optics↗

arXiv2016

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

In metal organic vapor phase epitaxy of GaN, the growth mode is sensitive to reactor temperature. In this study, V-pit-shaped GaN has been grown on normal c-plane cone-patterned sapphire substrate by decreasing the growth temperature of high-temperature-GaN to around 950 oC, which leads to the 3-dimensional growth of GaN. The so-called "WM" well describes the shape that the bottom of GaN V-pit is just right over the top of sapphire cone, and the regular arrangement of V-pits follows the patterns of sapphire substrate strictly. Two types of semipolar facets (1101) and (1122) expose on sidewalls of V-pits. Furthermore, by raising the growth temperature to 1000 oC, the growth mode of GaN can be transferred to 2-demonsional growth. Accordingly, the size of V-pits becomes smaller and the area of c-plane GaN becomes larger, while the total thickness of GaN keeps almost unchanged during this process. As long as the 2-demonsional growth lasts, the V-pits will disappear and only flat c-plane GaN remains. This means the area ratio of c-plane and semipolar plane GaN can be controlled by the duration time of 2-demonsional growth.

cond-mat.mtrl-sci↗

arXiv2016

InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of V-pits. In this paper, regularly arranged V-pits are formed on c-plane GaN grown by metal organic vapor phase epitaxy on conventional c-plane cone-patterned sapphire substrates. The size of V-pits and area of flat GaN can be adjusted by changing growth temperature. Five pairs of InGaN/GaN multi-quantumwell and also a light-emitting diode structure are grown on this V-pit-shaped GaN. Two peaks around 410 nm and 450 nm appearing in both photoluminescence and cathodeluminescence spectra are from the semipolar InGaN/GaN multi-quantum-well on sidewalls of V-pits and cplane InGaN/GaN multi-quantum-well, respectively. In addition, dense bright spots can be observed on the surface of light-emitting diode when it works under small injection current, which are believed owing to the enhanced hole injection around V-pits.

cond-mat.mes-hall↗

arXiv2016

Understanding different efficiency droop behaviors in InGaN-based near-UV, blue and green light-emitting diodes through differential carrier lifetime measurements

Efficiency droop effect under high injection in GaN-based light emitting diodes (LEDs) strongly depends on wavelength, which is still not well understood. In this paper, through differential carrier lifetime measurements on commercialized near-UV, blue, and green LEDs, their different efficiency droop behaviors are attributed to different carrier lifetimes, which are prolonged as wavelength increases. This relationship between carrier lifetime and indium composition of InGaN quantum well is believed owing to the polarization-induced quantum confinement Stark effect. Long carrier lifetime not only increases the probability of carrier leakage, but also results in high carrier concentration in quantum well. In other words, under the same current density, the carrier concentration in active region in near-UV LED is the lowest while that in green one is the highest. If considering the efficiency droop depending on carrier concentration, the behaviors of LEDs with different wavelengths do not show any abnormality. The reason why the efficiency droop becomes more serious under lower temperature can be also explained by this model as well. Based on this result, the possible solutions to conquer efficiency droop are discussed. It seems that decreasing the carrier lifetime is a fundamental approach to solve the problem.

cond-mat.mtrl-sci↗

arXiv2016

Continuous-wave Raman Lasing in Aluminum Nitride Microresonators

We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six Raman-active phonons, single-mode Raman lasing with low threshold and high slope efficiency is demonstrated. Selective excitation of A$_1^\mathrm{TO}$ and E$_2^\mathrm{high}$ phonons with Raman shifts of $\sim$612 and 660 cm$^{-1}$ is observed by adjusting the polarization of the pump light. A theoretical analysis of Raman scattering efficiency within ${c}$-plane (0001) of AlN is carried out to help account for the observed lasing behavior. Bidirectional lasing is experimentally confirmed as a result of symmetric Raman gain in micro-scale waveguides. Furthermore, second-order Raman lasing with unparalleled output power of $\sim$11.3 mW is obtained, which offers the capability to yield higher order Raman lasers for mid-infrared applications.

physics.optics↗

arXiv2016

A PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure

Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device should work under breakdown bias, where carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. However, breakdown is hard to control, in practice, APDs should work under Geiger mode as a compromise between sustainable detection and high gain. The complexity of system seriously restricts the application. Here, we demonstrate an avalanche photodiode holding high gain without breakdown, which means no quenching circuit is needed for sustainable detection. The device is based on a GaN/AlN periodically-stacked-structure (PSS), wherein electron holds much higher efficiency than hole to draw energy from the electric field, and avalanche happens uni-directionally with high efficiency. and a recorded high gain (10^4) tested under constant bias is obtained in a prototype device, wherein the stable gain can be determined by the periodicity of the GaN/AlN PSS. This work not only brings a new light into avalanche multiplication mechanism, but also paves a technological path with high commercial value to realize highly sensitive avalanche devices working under constant bias like PMT.

physics.ins-det↗