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arXiv · 1609.06123

Continuous-wave Raman Lasing in Aluminum Nitride Microresonators

Xianwen Liu·Changzheng Sun·Bing Xiong·Lai Wang·Jian Wang·Yanjun Han·Zhibiao Hao·Hongtao Li·Yi Luo·Jianchang Yan·Tongbo Wei·Yun Zhang·Junxi Wang
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Abstract

We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six Raman-active phonons, single-mode Raman lasing with low threshold and high slope efficiency is demonstrated. Selective excitation of A$_1^\mathrm{TO}$ and E$_2^\mathrm{high}$ phonons with Raman shifts of $\sim$612 and 660 cm$^{-1}$ is observed by adjusting the polarization of the pump light. A theoretical analysis of Raman scattering efficiency within ${c}$-plane (0001) of AlN is carried out to help account for the observed lasing behavior. Bidirectional lasing is experimentally confirmed as a result of symmetric Raman gain in micro-scale waveguides. Furthermore, second-order Raman lasing with unparalleled output power of $\sim$11.3 mW is obtained, which offers the capability to yield higher order Raman lasers for mid-infrared applications.

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Xianwen Liu, Changzheng Sun, Bing Xiong, Lai Wang, Jian Wang, Yanjun Han, Zhibiao Hao, Hongtao Li, Yi Luo, Jianchang Yan, Tongbo Wei, Yun Zhang, Junxi Wang. 2016-09-20. Continuous-wave Raman Lasing in Aluminum Nitride Microresonators. https://arxiv.org/abs/1609.06123

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