arXiv subjects

Binghai Yan

Publications and source records attributed to Binghai Yan.

At least 127 records · Page 7Linked to original sources

arXiv2022

Anomalous circularly polarized light emission in organic light-emitting diodes caused by orbital-momentum locking

Chiral circularly polarized (CP) light is central to many photonic technologies, from optical communication of spin information to novel display and imaging technologies. As such, there has been significant effort in the development of chiral emissive materials that allow for the emission of strongly dissymmetric CP light from organic light-emitting diodes (OLEDs). A consensus for chiral emission in such devices is that the molecular chirality of the active layer determines the favored light handedness of CP emission, regardless of the light-emitting direction. Here, we discover that, unconventionally, oppositely propagating CP light exhibits opposite handedness, and reversing the current-flow in OLEDs also switches the handedness of the emitted CP light. This direction-dependent CP emission boosts the net polarization rate by orders of magnitude by resolving an established issue in CP-OLEDs, where the CP light reflected by the back electrode typically erodes the measured dissymmetry. Through detailed theoretical analysis, we assign this anomalous CP emission to a ubiquitous topological electronic property in chiral materials, namely the orbital-momentum locking. Our work paves the way to design new chiroptoelectronic devices and probes the close connections between chiral materials, topological electrons, and CP light in the quantum regime.

cond-mat.mtrl-sci↗

arXiv2022

Strong Room-Temperature Bulk Nonlinear Hall Effect in a Spin-Valley Locked Dirac Material

Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe4. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb2 can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device's functionality in wireless microwave detection and frequency doubling. These findings broaden the coupled spin and valley physics from 2D systems into a 3D system and lay a foundation for exploring bulk NLHE's applications.

cond-mat.mes-hall↗

arXiv2022

Unifying semiclassics and quantum perturbation theory at nonlinear order

Nonlinear electrical response permits a unique window into effects of band structure geometry. It can be calculated either starting from a Boltzmann approach for small frequencies, or using Kubo's formula for resonances at finite frequency. However, a precise connection between both approaches has not been established. Focusing on the second order nonlinear response, here we show how the semiclassical limit can be recovered from perturbation theory in the velocity gauge, provided that finite quasiparticle lifetimes are taken into account. We find that matrix elements related to the band geometry combine in this limit to produce the semiclassical nonlinear conductivity. We demonstrate the power of the new formalism by deriving a quantum contribution to the nonlinear conductivity which is of order $τ^{-1}$ in the relaxation time $τ$, which is principally inaccessible within the Boltzmann approach. We outline which steps can be generalized to higher orders in the applied perturbation, and comment about potential experimental signatures of our results.

cond-mat.mes-hall↗

arXiv2022

Pressured-induced superconductivity extending across the topological phase transition in thallium-based topological materials TlBi(S1-xSex)2

The coexistence of superconductivity and topology holds the potential to realize exotic quantum states of matter. Here we report that superconductivity induced by high pressure in three thallium-based materials, covering the phase transition from a normal insulator (TlBiS2) to a topological insulator (TlBiSe2) through a Dirac semimetal (TlBiSeS). By increasing the pressure up to 60 GPa, we observe superconductivity phase diagrams with maximal Tc values at 6.0-8.1 K. Our density-functional theory calculations reveal topological surface states in superconductivity phases for all three compounds. Our study paves the path to explore topological superconductivity and topological phase transitions.

cond-mat.supr-con↗

arXiv2022

Electrical switching of ferro-rotational order in nano-thick 1T-TaS$_2$ crystals

Hysteretic switching of domain states is a salient character of all ferroic materials and the foundation for their multifunctional applications. Ferro-rotational order is emerging as a new type of ferroic order featuring structural rotations, but its controlled switching remains elusive due to its invariance under both time reversal and spatial inversion. Here, we demonstrate electrical switching of ferro-rotational domain states in nanometer-thick 1T-TaS$_2$ crystals in its charge-density-wave phases. Cooling from the high-symmetry phase to the ferro-rotational phase under an external electric field induces domain state switching and domain wall formation, realized in a simple two-terminal configuration using a volt-scale voltage. Although the electric field does not couple with the order due to symmetry mismatch, it drives domain wall propagation to give rise to reversible, durable, and nonvolatile isothermal state switching at room temperature. These results pave the path for manipulation of the ferro-rotational order and its nanoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2022

Delicate Ferromagnetism in MnBi$_6$Te$_{10}$

Tailoring magnetic orders in topological insulators is critical to the realization of topological quantum phenomena. An outstanding challenge is to find a material where atomic defects lead to tunable magnetic orders while maintaining a nontrivial topology. Here, by combining magnetization measurements, angle-resolved photoemission spectroscopy, and transmission electron microscopy, we reveal disorder-enabled, tunable magnetic ground states in MnBi$_6$Te$_{10}$. In the ferromagnetic phase, an energy gap of 15 meV is resolved at the Dirac point on the MnBi$_2$Te$_4$ termination. In contrast, antiferromagnetic MnBi$_6$Te$_{10}$ exhibits gapless topological surface states on all terminations. Transmission electron microscopy and magnetization measurements reveal substantial Mn vacancies and Mn migration in ferromagnetic MnBi$_6$Te$_{10}$. We provide a conceptual framework where a cooperative interplay of these defects drives a delicate change of overall magnetic ground state energies, and leads to tunable magnetic topological orders. Our work provides a clear pathway for nanoscale defect-engineering towards the realization of topological quantum phases.

cond-mat.mtrl-sci↗

arXiv2022

Titanium doped kagome superconductor CsV3-xTixSb5 and two distinct phases

The vanadium-based kagome superconductor CsV3Sb5 has attracted tremendous attention due to its unexcepted anomalous Hall effect (AHE), charge density waves (CDWs), nematicity, and a pseudogap pair density wave (PDW) coexisting with unconventional strong-coupling superconductivity (SC). The origins of CDWs, unconventional SC, and their correlation with different electronic states in this kagome system are of great significance, but so far, are still under debate. Chemical doping in the kagome layer provides one of the most direct ways to reveal the intrinsic physics, but remains unexplored. Here, we report, for the first time, the synthesis of Ti-substituted CsV3Sb5 single crystals and its rich phase diagram mapping the evolution of intertwining electronic states. The Ti atoms directly substitute for V in the kagome layers. CsV3-xTixSb5 shows two distinct SC phases upon substitution. The Ti slightly-substituted phase displays an unconventional V-shaped SC gap, coexisting with weakening CDW, PDW, AHE, and nematicity. The Ti highly-substituted phase has a U-shaped SC gap concomitant with a short-range rotation symmetry breaking CDW, while long-range CDW, twofold symmetry of in-plane resistivity, AHE, and PDW are absent. Furthermore, we also demonstrate the chemical substitution of V atoms with other elements such as Cr and Nb, showing a different modulation on the SC phase and CDWs. These findings open up a way to synthesise a new family of doped CsV3Sb5 materials, and further representing a new platform for tuning the different correlated electronic states and superconducting pairing in kagome superconductors.

cond-mat.supr-con↗

arXiv2022

Intertwined magnetism and charge density wave order in kagome FeGe

Electron correlations often lead to emergent orders in quantum materials. Kagome lattice materials are emerging as an exciting platform for realizing quantum topology in the presence of electron correlations. This proposal stems from the key signatures of electronic structures associated with its lattice geometry: flat band induced by destructive interference of the electronic wavefunctions, topological Dirac crossing, and a pair of van Hove singularities (vHSs). A plethora of correlated electronic phases have been discovered amongst kagome lattice materials, including magnetism, charge density wave (CDW), nematicity, and superconductivity. These materials can be largely organized into two types: those that host magnetism and those that host CDW order. Recently, a CDW order has been discovered in the magnetic kagome FeGe, providing a new platform for understanding the interplay between CDW and magnetism. Here, utilizing angle-resolved photoemission spectroscopy, we observe all three types of electronic signatures of the kagome lattice: flat bands, Dirac crossings, and vHSs. From both the observation of a temperature-dependent shift of the vHSs towards the Fermi level as well as guidance via first-principle calculations, we identify the presence of the vHSs near the Fermi level (EF) to be driven by the development of underlying magnetic exchange splitting. Furthermore, we show spectral evidence for the CDW order as gaps that open on the near-EF vHS bands, as well as evidence of electron-phonon coupling from a kink on the vHS band together with phonon hardening observed by inelastic neutron scattering. Our observation points to the magnetic interaction-driven band modification resulting in the formation of the CDW order, indicating an intertwined connection between the emergent magnetism and vHS charge order in this moderately-correlated kagome metal.

cond-mat.str-el↗

arXiv2022

Unusual Spin Polarization in the Chirality Induced Spin Selectivity

Chirality-induced spin selectivity (CISS) refers to the fact that electrons get spin polarized after passing through organic chiral molecules in a nanoscale device. In CISS, chiral molecules are commonly believed to be a spin filter through which one favored spin transmits and the opposite spin gets reflected, i.e., transmitted and reflected electrons exhibit opposite spin polarization. In this work, we point out that such a spin filter scenario contradicts the principle that equilibrium spin current must vanish. Instead, we find that both transmitted and reflected electrons present the same type spin polarization, which is actually ubiquitous for a two-terminal device. More accurately, chiral molecules play the role of a spin polarizer rather than a spin filter. The direction of spin polarization is determined by the molecule chirality and the electron incident direction. And the magnitude of spin polarization replies on local spin-orbit coupling in the device. Our work brings a deeper understanding on CISS and interprets recent experiments, for example, the CISS-driven anomalous Hall effect.

cond-mat.mes-hall↗

arXiv2022

Chiral Majorana Modes via Proximity to a Twisted Cuprate Bilayer

We propose a novel heterostructure to achieve chiral topological superconductivity in 2D. A substrate with a large Rashba spin-orbit coupling energy is brought in proximity to a twisted bilayer of thin films exfoliated from a high-temperature cuprate superconductor. The combined system is then exposed to an out-of-plane magnetic field. The rare $d + id$ pairing symmetry expected to occur in such a system allows for nontrivial topology; specifically, in contrast to the case of the twisted bilayer in isolation, the substrate induces an odd Chern number. The resulting phase is characterized by the presence of a Majorana zero mode in each vortex.

cond-mat.supr-con↗

arXiv2022

General nonlinear Hall current in magnetic insulators beyond the quantum anomalous Hall effect

Can a generic magnetic insulator exhibit a Hall current? The quantum anomalous Hall effect (QAHE) is one example of an insulating bulk carrying a quantized Hall conductivity and other insulators (with zero Chern number) present zero Hall conductance in the linear response regime. Here, we find that a general magnetic insulator possesses a nonlinear Hall conductivity quadratic to the electric field if the system breaks inversion symmetry. This conductivity originates from an induced orbital magnetization due to virtual interband transitions. We identify three contributions to the wavepacket motion, a velocity shift, a positional shift, and a Berry curvature renormalization. In contrast to the crystalline solid, we find that this nonlinear Hall conductivity vanishes for Landau levels of a 2D electron gas, indicating a fundamental difference between the QAHE and the Integer quantum Hall effect.

cond-mat.mes-hall↗

arXiv2022

Interplay of Structural Chirality, Electron Spin and Topological Orbital in Chiral Molecular Spin Valves

Chirality has been a property of central importance in chemistry and biology for more than a century, and is now taking on increasing relevance in condensed matter physics. Recently, electrons were found to become spin polarized after transmitting through chiral molecules, crystals, and their hybrids. This phenomenon, called chirality-induced spin selectivity (CISS), presents broad application potentials and far-reaching fundamental implications involving intricate interplays among structural chirality, topological states, and electronic spin and orbitals. However, the microscopic picture of how chiral geometry influences electronic spin remains elusive. In this work, via a direct comparison of magnetoconductance (MC) measurements on magnetic semiconductor-based chiral molecular spin valves with normal metal electrodes of contrasting strengths of spin-orbit coupling (SOC), we unambiguously identified the origin of the SOC, a necessity for the CISS effect, given the negligible SOC in organic molecules. The experiments revealed that a heavy-metal electrode provides SOC to convert the orbital polarization induced by the chiral molecular structure to spin polarization. Our results evidence the essential role of SOC in the metal electrode for engendering the CISS spin valve effect. A tunneling model with a magnetochiral modulation of the potential barrier is shown to quantitatively account for the unusual transport behavior. This work hence produces critical new insights on the microscopic mechanism of CISS, and more broadly, reveals a fundamental relation between structure chirality, electron spin, and orbital.

cond-mat.mtrl-sci↗

arXiv2022

Magnetization switching in polycrystalline Mn3Sn thin film induced by self-generated spin-polarized current

Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current inspires us to explore the magnetization switching of chiral spins using self-generated spin torque. Here, we demonstrate the electric switching of noncollinear antiferromagnetic state in Mn3Sn by observing a crossover from conventional spin-orbit torque to the self-generated spin torque when increasing the MgO thickness in Ta/MgO/Mn3Sn polycrystalline films. The spin current injection from the Ta layer can be controlled and even blocked by varying the MgO thickness, but the switching sustains even at a large MgO thickness. Furthermore, the switching polarity reverses when the MgO thickness exceeds around 3 nm, which cannot be explained by the spin-orbit torque scenario due to spin current injection from the Ta layer. Evident current-induced switching is also observed in MgO/Mn3Sn and Ti/Mn3Sn bilayers, where external injection of spin Hall current to Mn3Sn is negligible. The inter-grain spin-transfer torque induced by spin-polarized current explains the experimental observations. Our findings provide an alternative pathway for electrical manipulation of non-collinear antiferromagnetic state without resorting to the conventional bilayer structure.

cond-mat.mtrl-sci↗

arXiv2022

Efficient generation of spin currents by the Orbital Hall effect in pure Cu and Al and their measurement by a Ferris-wheel ferromagnetic resonance technique at the wafer level

We present a new ferromagnetic resonance (FMR) method that we term the Ferris FMR. It is wideband, has significantly higher sensitivity as compared to conventional FMR systems, and measures the absorption line rather than its derivative. It is based on large-amplitude modulation of the externally applied magnetic field that effectively magnifies signatures of the spin-transfer torque making its measurement possible even at the wafer-level. Using the Ferris FMR, we report on the generation of spin currents from the orbital Hall effect taking place in pure Cu and Al. To this end, we use the spin-orbit coupling of a thin Pt layer introduced at the interface that converts the orbital current to a measurable spin current. While Cu reveals a large effective spin Hall angle exceeding that of Pt, Al possesses an orbital Hall effect of opposite polarity in agreement with the theoretical predictions. Our results demonstrate additional spin- and orbit- functionality for two important metals in the semiconductor industry beyond their primary use as interconnects with all the advantages in power, scaling, and cost.

cond-mat.str-el↗

arXiv2022

The Quantum Twisting Microscope

The invention of scanning probe microscopy has revolutionized the way electronic phenomena are visualized. While present-day probes can access a variety of electronic properties at a single location in space, a scanning microscope that can directly probe the quantum mechanical existence of an electron at multiple locations would provide direct access to key quantum properties of electronic systems, so far unreachable. Here, we demonstrate a conceptually new type of scanning probe microscope - the Quantum Twisting Microscope (QTM) - capable of performing local interference experiments at its tip. The QTM is based on a unique van-der-Waals tip, allowing the creation of pristine 2D junctions, which provide a multitude of coherently-interfering paths for an electron to tunnel into a sample. With the addition of a continuously scanned twist angle between the tip and sample, this microscope probes electrons in momentum space similar to the way a scanning tunneling microscope probes electrons in real space. Through a series of experiments, we demonstrate room temperature quantum coherence at the tip, study the twist angle evolution of twisted bilayer graphene, directly image the energy bands of monolayer and twisted bilayer graphene, and finally, apply large local pressures while visualizing the evolution of the flat energy bands of the latter. The QTM opens the way for novel classes of experiments on quantum materials.

cond-mat.mes-hall↗

arXiv2022

Distinct magnetic gaps between antiferromagnetic and ferromagnetic orders driven by surface defects in the topological magnet MnBi2Te4

The magnetic topological insulator, MnBi$_2$Te$_4$, shows metallic behavior at zero magnetic fields (antiferromagnetic phase, AFM) in thin film transport, which coincides with gapless surface states observed by angle-resolved photoemission spectroscopy, while it can become a Chern insulator at field larger than 6 T (ferromagnetic phase, FM). Thus, the zero-field surface magnetism was once speculated to be different from the bulk AFM phase. However, recent magnetic force microscopy refutes this assumption by detecting persistent AFM order on the surface. In this work, we propose a mechanism related to surface defects that can rationalize these contradicting observations in different experiments. We find that co-antisites (exchanging Mn and Bi atoms in the surface van der Waals layer) can strongly suppress the magnetic gap down to several meV in the AFM phase without violating the magnetic order but preserve the magnetic gap in the FM phase. The different gap sizes between AFM and FM phases are caused by the defect-induced surface charge redistribution among top two van der Waals layers. This theory can be validated by the position- and field-dependent gap in future surface spectroscopy measurements. Our work suggests suppressing related defects in samples to realize the quantum anomalous Hall insulator or axion insulator at zero fields.

cond-mat.mtrl-sci↗

arXiv2022

Field-linear anomalous Hall effect and Berry curvature induced by spin chirality in the kagome antiferromagnet Mn3Sn

During the past two decades, it has been established that a non-trivial electron wave-function topology generates an anomalous Hall effect (AHE), which shows itself as a Hall conductivity non-linear in magnetic field. Here, we report on an unprecedented case of field-linear AHE. In Mn$_3$Sn, a kagome magnet, the out-of-plane Hall response, which shows an abrupt jump, was discovered to be a case of AHE. We find now that the in-plane Hall response, which is perfectly linear in magnetic field, is set by the Berry curvature of the wavefunction. The amplitude of the Hall response and its concomitant Nernst signal exceed by far what is expected in the semiclassical picture. We argue that magnetic field induces out-of-plane spin canting and thereafter gives rise to nontrivial spin chirality on the kagome lattice. In band structure, we find that the spin chirality modifies the topology by gapping out Weyl nodal lines unknown before, accounting for the AHE observed. Our work reveals intriguing unification of real-space Berry phase from spin chirality and momentum-space Berry curvature.

cond-mat.mtrl-sci↗

arXiv2022

Orbital shift-induced boundary obstructed topological materials with a large energy gap

We propose boundary obstructed topological phases caused by Wannier orbital shift between ordinary atomic sites, which, however, cannot be indicated by symmetry eigenvalues at high symmetry momenta (symmetry indicators) in bulk. On the open boundary, Wannier charge centers can shift to different atoms from those in bulk, leading to in-gap surface states, higher-order hinge states or corner states. To demonstrate such orbital-shift-induced boundary obstructed topological insulators, we predict eight material candidates, all of which were overlooked in present topological databases. Metallic surface states, hinge states, or corner states cover the large bulk energy gap (for example, more than 1 eV in TlGaTe$_2$) at related boundary, which are ready for experimental detection. Additionally, we find these materials are also fragile topological insulators with hourglass like surface states.

cond-mat.mes-hall↗