arXiv subjects

Bor-Yuan Jiang

Publications and source records attributed to Bor-Yuan Jiang.

5 recordsLinked to original sources

arXiv2020

Nano-photocurrent mapping of local electronic structure in twisted bilayer graphene

We report a combined nano-photocurrent and infrared nanoscopy study of twisted bilayer graphene (TBG) enabling access to the local electronic phenomena at length scales as short as 20 nm. We show that the photocurrent changes sign at carrier densities tracking the local superlattice density of states of TBG. We use this property to identify domains of varying local twist angle by local photo-thermoelectric effect. Consistent with the photocurrent study, infrared nano-imaging experiments reveal optical conductivity features dominated by twist-angle dependent interband transitions. Our results provide a fast and robust method for mapping the electronic structure of TBG and suggest that similar methods can be broadly applied to probe electronic inhomogeneities of moiré superlattices in other van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2018

Theory of plasmon reflection by a 1D junction

We present a comprehensive study of the reflection of normally incident plasmon waves from a low-conductivity 1D junction in a 2D conductive sheet. Rigorous analytical results are derived in the limits of wide and narrow junctions. Two types of phenomena determine the reflectance, the cavity resonances within the junction and the capacitive coupling between the leads. The resonances give rise to alternating strong and weak reflection but are vulnerable to plasmonic damping. The capacitive coupling, which is immune to damping, induces a near perfect plasmon reflection in junctions narrower than $1/10$ of the plasmon wavelength. Our results are important for infrared 2D plasmonic circuits utilizing slot antennas, split gates or nanowire gates. They are also relevant for the implementation of nanoscale terahertz detectors, where optimal light absorption coincides with the maximal junction reflectance.

cond-mat.mes-hall↗

arXiv2017

Plasmon reflections by topological electronic boundaries in bilayer graphene

Domain walls separating regions of AB and BA interlayer stacking in bilayer graphene have attracted attention as novel examples of structural solitons, topological electronic boundaries, and nanoscale plasmonic scatterers. We show that strong coupling of domain walls to surface plasmons observed in infrared nanoimaging experiments is due to topological chiral modes confined to the walls. The optical transitions among these chiral modes and the band continua enhance the local ac conductivity, which leads to plasmon reflection by the domain walls. The imaging reveals two kinds of plasmonic standing-wave interference patterns, which we attribute to shear and tensile domain walls. We compute the electronic structure of both wall varieties and show that the tensile wall contain additional confined bands which produce a structure-specific contrast of the local conductivity. The calculated plasmonic interference profiles are in quantitative agreement with our experiments.

cond-mat.mes-hall↗

arXiv2016

Tunable plasmonic reflection by bound 1D electron states in a 2D Dirac metal

We show that surface plasmons of a two-dimensional Dirac metal such as graphene can be reflected by line-like perturbations hosting one-dimensional electron states. The reflection originates from a strong enhancement of the local optical conductivity caused by optical transitions involving these bound states. We propose that the bound states can be systematically created, controlled, and liquidated by an ultranarrow electrostatic gate. Using infrared nanoimaging, we obtain experimental evidence for the locally enhanced conductivity of graphene induced by a carbon nanotube gate, which supports this theoretical concept.

cond-mat.mes-hall↗

arXiv2015

Electronic response of graphene to linelike charge perturbations

The problem of electrostatic screening of a charged line by undoped or weakly doped graphene is treated beyond the linear-response theory. The induced electron density is found to be approximately doping independent, n(x)~(log x)^2/x^2, at intermediate distances x from the charged line. At larger x, twin p-n junctions may form if the external perturbation is repulsive for graphene charge carriers. The effect of such inhomogeneities on conductance and quantum capacitance of graphene is calculated. The results are relevant for transport properties of graphene grain boundaries and for local electrostatic control of graphene with ultrathin gates.

cond-mat.mes-hall↗