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Bozo Vareskic

Publications and source records attributed to Bozo Vareskic.

3 recordsLinked to original sources

Two Strategies to Measure Spin-Orbit-Torque Efficiency Acting on the Insulating Magnet Li$_{0.5}$Al$_{0.7}$Fe$_{1.8}$O$_4$

For insulating magnets, widely-used electrically-based techniques to measure spin-orbit-torque efficiency can suffer from poor signal-to-noise ratios and unwanted artifacts, while optical measurements based on conventional magneto-optical Kerr effect (MOKE) imaging often lack sufficient sensitivity. Here we analyze two strategies for measuring the spin-torque efficiency acting on an insulating magnet, focusing on the torque from Pt acting on thin films of the low-damping magnet lithium aluminum ferrite (LAFO). First, lateral + longitudinal spin-torque ferromagnetic resonance (ST-FMR) allows separation of the spin-torque signal from artifacts due to spin-pumping and resonant heating. With this technique, we measure a spin-torque efficiency $ξ^\text{ST-FMR}_\text{DL}\sim\ 0.07$, comparable to but a bit less than for Pt acting on metallic ferromagnets. Second, we attempted optical measurements of spin-orbit-torque-induced magnetic deflection using Sagnac interferometry. We find that Sagnac interferometry provides sufficient sensitivity to measure signals from 14.4 nm LAFO thin films, but the inferred torque efficiency is much weaker than the result from lateral + longitudinal ST-FMR. We speculate that there may be another contribution to the Sagnac signal other than current-induced magnetic deflection, perhaps an out-of-plane component of itinerant electron spins. This becomes relevant for insulating magnets in which the magneto-optic coupling coefficient is very weak.

cond-mat.mes-hall

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene. Despite the nominally-symmetric tunnel-junction structure, these devices can exhibit substantial electroresistance upon reversing the ferroelectric polarization. The magnitude and sign of tunneling electroresistance are tunable by bias and gate voltage. We show that this behavior can be understood within a simple tunneling model that takes into account the quantum capacitance of the graphene electrodes, so that the tunneling densities of states in the electrodes are separately modified as a function of bias and gate voltage.

cond-mat.mes-hall

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure the thermal conductivity of crystalline AlN by the 3$ω$ method, finding it ranges from 674 ${\pm}$ 56 W/m/K at 100 K to 186 ${\pm}$ 7 W/m/K at 400 K, with a value of 237 ${\pm}$ 6 W/m/K at room temperature. We compare these data with analytical models and first principles calculations, taking into account atomic-scale defects (O, Si, C impurities, and Al vacancies). We find Al vacancies play the greatest role in reducing thermal conductivity because of the largest mass-difference scattering. Modeling also reveals that 10% of heat conduction is contributed by phonons with long mean free paths, over ~7 $μ$m at room temperature, and 50% by phonons with MFPs over ~0.3 $μ$m. Consequently, the effective thermal conductivity of AlN is strongly reduced in sub-micron thin films or devices due to phonon-boundary scattering.

cond-mat.mtrl-sci