arXiv subjects

C. B. Winkelmann

Publications and source records attributed to C. B. Winkelmann.

At least 19 recordsLinked to original sources

arXiv2025

A hole spin resilient to dipole-induced thermal effects

Recent advances in scaling up spin-based quantum processors have revealed unanticipated issues related to thermal effects. Microwave pulses required to manipulate and read the qubits are found to overheat the spins environment, which unexpectedly induces Larmor frequency shifts, reducing thereby gate fidelities. In this study, we shine light on these elusive thermal effects, by experimentally characterizing the temperature dependence of the Larmor frequency for a single hole spin in silicon. Our results unambiguously reveal an electrical origin underlying the thermal susceptibility, stemming from the spin-orbit-induced electric susceptibility. We perform an accurate modeling of the spin electrostatic environment and gyromagnetic properties, allowing us to pinpoint electric dipoles which unfreeze as the temperature increases, as responsible for these frequency shifts. Surprisingly, we find that the thermal susceptibility can be tuned with the magnetic field angle and can even cancel out, unveiling a sweet spot where the hole spin is rendered immune to thermal effects. These findings reveal the microscopic origin of longitudinal thermal susceptibility, providing key insight for the design of thermally robust semiconductor qubits.

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arXiv2024

Superconductivity of alpha-gallium probed on the atomic scale by normal and Josephson tunneling

We investigate superconducting gallium in its $α$ phase using scanning tunneling microscopy and spectroscopy at temperatures down to about 100 mK. High-resolution tunneling spectroscopies using both superconducting and normal tips show that superconducting $α$-Ga is accurately described by Bardeen-Cooper-Schrieffer theory, with a gap $Δ_{\rm Ga}$ = 163 $μ$eV on the $α-$Ga(112) facet, with highly homogeneous spectra over the surface, including atomic defects and step edges. Using a superconducting Pb tip, we furthermore study the low-bias conductance features of the Josephson junction formed between tip and sample. The features are accurately described by dynamical Coulomb blockade theory, highlighting $α-$Ga as a possible platform for surface science studies of mesoscopic superconductivity.

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arXiv2022

Calorimetry of a Quantum Phase Slip

In a Josephson junction, which is the central element in superconducting quantum technology, irreversibility arises from abrupt slips of the gauge-invariant quantum phase difference across the contact. A quantum phase slip (QPS) is often visualized as the tunneling of a flux quantum in the transverse direction to the superconducting weak link, which produces dissipation. In this work, we detect the instantaneous heat release caused by a QPS in a Josephson junction using time-resolved electron thermometry on a nanocalorimeter, signaled by an abrupt increase of the local electronic temperature in the weak link and subsequent relaxation back to equilibrium. Beyond providing a cornerstone in experimental quantum thermodynamics in form of observation of heat in an elementary quantum process, this result sets the ground for experimentally addressing the ubiquity of dissipation, including that in superconducting quantum sensors and qubits.

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arXiv2021

Quantum confinement suppressing electronic heat flow below the Wiedemann-Franz law

The Wiedemann-Franz law states that the charge conductance and the electronic contribution to the heat conductance are proportional. This sets stringent constraints on efficiency bounds for thermoelectric applications, which seek for large charge conduction in response to a small heat flow. We present experiments based on a quantum dot formed inside a semiconducting InAs nanowire transistor, in which the heat conduction can be tuned significantly below the Wiedemann-Franz prediction. Comparison with scattering theory shows that this is caused by quantum confinement and the resulting energy-selective transport properties of the quantum dot. Our results open up perspectives for tailoring independently the heat and electrical conduction properties in semiconductor nanostructures.

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arXiv2020

A Single-Quantum-Dot Heat Valve

We demonstrate gate control of electronic heat flow in a thermally-biased single-quantum-dot junction. Electron temperature maps taken in the immediate vicinity of the junction, as a function of the gate and bias voltages applied to the device, reveal clearly defined Coulomb diamond patterns revealing a maximum heat transfer right at the charge degeneracy point. The non-trivial bias and gate dependence of this heat valve results from both the quantum nature of the dot at the heart of device and its strong coupling to leads.

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arXiv2020

Non-invasive nanoscale potentiometry and ballistic transport in epigraphene nanoribbons

The recent observation of non-classical electron transport regimes in two-dimensional materials has called for new high-resolution non-invasive techniques to locally probe electronic properties. We introduce a novel hybrid scanning probe technique to map the local resistance and electrochemical potential with nm- and $μ$V resolution, and we apply it to study epigraphene nanoribbons grown on the sidewalls of SiC substrate steps. Remarkably, the potential drop is non uniform along the ribbons, and $μ$m-long segments show no potential variation with distance. The potential maps are in excellent agreement with measurements of the local resistance. This reveals ballistic transport in ambient condition, compatible with micrometer-long room-temperature electronic mean free paths.

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arXiv2019

Magnetic-Field-Induced Transition in a Quantum Dot Coupled to a Superconductor

The magnetic moment of a quantum dot can be screened by its coupling to a superconducting reservoir, depending on the hierarchy of the superconducting gap and the relevant Kondo scale. This screening-unscreening transition can be driven by electrostatic gating, tunnel coupling, and, as we demonstrate here, magnetic field. We perform high-resolution spectroscopy of subgap excitations near the screening-unscreening transition of asymmetric superconductor - quantum dot - superconductor (S-QD-S) junctions formed by the electromigration technique. Our measurements reveal a re-entrant phase boundary determined by the competition between Zeeman energy and gap reduction with magnetic field. We further track the evolution of the phase transition with increasing temperature, which is also evidenced by thermal replicas of subgap states.

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arXiv2018

Direct measurement of the Seebeck coefficient in a Kondo-correlated single-quantum-dot transistor

We report on the first measurement of the Seebeck coefficient in a tunnel-contacted and gate-tunable individual single-quantum dot junction in the Kondo regime, fabricated using the electromigration technique. This fundamental thermoelectric parameter is obtained by directly monitoring the magnitude of the voltage induced in response to a temperature difference across the junction, while keeping a zero net tunneling current through the device. In contrast to bulk materials and single molecules probed in a scanning tunneling microscopy (STM) configuration, investigating the thermopower in nanoscale electronic transistors benefits from the electric tunability to showcase prominent quantum effects. Here, striking sign changes of the Seebeck coefficient are induced by varying the temperature, depending on the spin configuration in the quantum dot. The comparison with Numerical Renormalization Group (NRG) calculations demonstrate that the tunneling density of states is generically asymmetric around the Fermi level in the leads, both in the cotunneling and Kondo regimes.

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arXiv2017

Thermal Conductance of a Single-Electron Transistor

We report on combined measurements of heat and charge transport through a single-electron transistor. The device acts as a heat switch actuated by the voltage applied on the gate. The Wiedemann-Franz law for the ratio of heat and charge conductances is found to be systematically violated away from the charge degeneracy points. The observed deviation agrees well with the theoretical expectation. With large temperature drop between the source and drain, the heat current away from degeneracy deviates from the standard quadratic dependence in the two temperatures.

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arXiv2016

Single Quantum Level Electron Turnstile

We report on the realization of a single-electron source, where current is transported through a single-level quantum dot (Q), tunnel-coupled to two superconducting leads (S). When driven with an ac gate voltage, the experiment demonstrates electron turnstile operation. Compared to the more conventional superconductor - normal metal - superconductor turnstile, our SQS device presents a number of novel properties, including higher immunity to the unavoidable presence of non-equilibrium quasiparticles in superconducting leads. In addition, we demonstrate its ability to deliver electrons with a very narrow energy distribution.

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arXiv2015

Charge Puddles in Graphene Near the Dirac Point

The charge carrier density in graphene on a dielectric substrate such as SiO$_2$ displays inhomogeneities, the so-called charge puddles. Because of the linear dispersion relation in monolayer graphene, the puddles are predicted to grow near charge neutrality, a markedly distinct property from conventional two-dimensional electron gases. By performing scanning tunneling microscopy/spectroscopy on a mesoscopic graphene device, we directly observe the puddles' growth, both in spatial extent and in amplitude, as the Dirac point is approached. Self-consistent screening theory provides a unified description of both the macroscopic transport properties and the microscopically observed charge disorder.

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arXiv2015

Probing Hybridization of a Single Energy Level Coupled to Superconducting Leads

Electron transport through a quantum dot coupled to superconducting leads shows a sharp conductance onset when a quantum dot orbital level crosses the superconducting coherence peak of one lead. We study superconducting single electron transistors in the weak coupling limit by connecting individual gold nanoparticles with aluminum junctions formed by electromigration. We show that the transport features close to the conductance onset threshold can be accurately described by the quantum dot levels' hybridization with the leads, which is strongly enhanced by the divergent density of states at the superconducting gap edge. This highlights the importance of electron cotunneling effects in spectroscopies with superconducting probes.

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arXiv2015

Controlling hysteresis in superconducting constrictions with a resistive shunt

We demonstrate control of the thermal hysteresis in superconducting constrictions by adding a resistive shunt. In order to prevent thermal relaxation oscillations, the shunt resistor is placed in close vicinity of the constriction, making the inductive current-switching time smaller than the thermal equilibration time. We investigate the current-voltage characteristics of the same constriction with and without the shunt-resistor. The widening of the hysteresis-free temperature range is explained on the basis of a simple model.

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arXiv2015

Reversibility of Superconducting Nb Weak Links Driven by the Proximity Effect in a Quantum Interference Device

We demonstrate the role of proximity effect in the thermal hysteresis of superconducting constrictions. From the analysis of successive thermal instabilities in the transport characteristics of micron-size superconducting quantum interference devices with a well-controlled geometry, we obtain a complete picture of the different thermal regimes. These determine whether the junctions are hysteretic or not. Below the superconductor critical temperature, the critical current switches from a classical weak-link behavior to one driven by the proximity effect. The associated small amplitude of the critical current makes it robust with respect to the heat generation by phase-slips, leading to a non-hysteretic behavior.

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arXiv2014

Ripples and Charge Puddles in Graphene on a Metallic Substrate

Graphene on a dielectric substrate exhibits spatial doping inhomogeneities, forming electron-hole puddles. Understanding and controlling the latter is of crucial importance for unraveling many of graphene's fundamental properties at the Dirac point. Here we show the coexistence and correlation of charge puddles and topographic ripples in graphene decoupled from the metallic substrate it was grown on. The analysis of interferences of Dirac fermion-like electrons yields a linear dispersion relation, indicating that graphene on a metal can recover its intrinsic electronic properties.

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arXiv2013

Niobium-based superconducting nano-devices fabrication using all-metal suspended masks

We report a novel method for the fabrication of superconducting nanodevices based on niobium. The well-known difficulties of lithographic patterning of high-quality niobium are overcome by replacing the usual organic resist mask by a metallic one. The quality of the fabrication procedure is demonstrated by the realization and characterization of long and narrow superconducting lines and niobium-gold-niobium proximity SQUIDs.

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arXiv2013

Trapping hot quasi-particles in a high-power superconducting electronic cooler

The performance of hybrid superconducting electronic coolers is usually limited by the accumulation of hot quasi-particles in the superconducting leads. This issue is all the more stringent in large-scale and high-power devices, as required by applications. Introducing a metallic drain connected to the superconducting electrodes via a fine-tuned tunnel barrier, we efficiently remove quasi-particles and obtain electronic cooling from 300 mK down to 130 mK with a 400 pW cooling power. A simple thermal model accounts for the experimental observations.

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arXiv2009

Superconductivity in a single C60 transistor

Single molecule transistors (SMTs) are currently attracting enormous attention as possible quantum information processing devices. An intrinsic limitation to the prospects of these however is associated to the presence of a small number of quantized conductance channels, each channel having a high access resistance of at best $R_{K}/2=h/2e^{2}$=12.9 k$Ω$. When the contacting leads become superconducting, these correlations can extend throughout the whole system by the proximity effect. This not only lifts the resistive limitation of normal state contacts, but further paves a new way to probe electron transport through a single molecule. In this work, we demonstrate the realization of superconducting SMTs involving a single C60 fullerene molecule. The last few years have seen gate-controlled Josephson supercurrents induced in the family of low dimensional carbon structures such as flakes of two-dimensional graphene and portions of one-dimensional carbon nanotubes. The present study involving a full zero-dimensionnal fullerene completes the picture.

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