arXiv subjects

C. H. Yang

Publications and source records attributed to C. H. Yang.

At least 37 records · Page 2Linked to original sources

arXiv2017

Impact of g-factors and valleys on spin qubits in a silicon double quantum dot

We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an inter-valley spin-orbit coupling. We fit the data from which we extract an inter-valley coupling strength of 43 MHz. In addition, we observe a narrow resonance near the primary qubit resonance when we operate the device in the (1,1) charge configuration. The experimental data is consistent with a simulation involving two weakly exchanged-coupled spins with a g-factor difference of 1 MHz, of the same order as the Rabi frequency. We conclude that the narrow resonance is the result of driven transitions between the T- and T+ triplet states, using an ESR signal of frequency located halfway between the resonance frequencies of the two individual spins. The findings presented here offer an alternative method of implementing two-qubit gates, of relevance to the operation of larger scale spin qubit systems.

cond-mat.mes-hall↗

arXiv2016

Valley splitting of single-electron Si MOS quantum dots

Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from a new experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both the new experiment and a recently reported one. Through sampling millions of realistic cases of interface roughness, our method provides evidence that, despite radically different processing, the valley physics between the two samples is essentially the same. This work provides the first evidence that valley splitting can be deterministically predicted and controlled in metal oxide semiconductor quantum dots, a critical requirement for such systems to realize a reliable qubit platform.

cond-mat.mes-hall↗

arXiv2016

Silicon CMOS architecture for a spin-based quantum computer

Recent advances in quantum error correction (QEC) codes for fault-tolerant quantum computing \cite{Terhal2015} and physical realizations of high-fidelity qubits in a broad range of platforms \cite{Kok2007, Brown2011, Barends2014, Waldherr2014, Dolde2014, Muhonen2014, Veldhorst2014} give promise for the construction of a quantum computer based on millions of interacting qubits. However, the classical-quantum interface remains a nascent field of exploration. Here, we propose an architecture for a silicon-based quantum computer processor based entirely on complementary metal-oxide-semiconductor (CMOS) technology, which is the basis for all modern processor chips. We show how a transistor-based control circuit together with charge-storage electrodes can be used to operate a dense and scalable two-dimensional qubit system. The qubits are defined by the spin states of a single electron confined in a quantum dot, coupled via exchange interactions, controlled using a microwave cavity, and measured via gate-based dispersive readout \cite{Colless2013}. This system, based entirely on available technology and existing components, is compatible with general surface code quantum error correction \cite{Terhal2015}, enabling large-scale universal quantum computation.

cond-mat.mes-hall↗

arXiv2015

Spin-orbit coupling and operation of multi-valley spin qubits

Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits, addressing them via an electric field dependent g-factor. We perform randomized benchmarking and find that both qubits can be operated with high fidelity. Surprisingly, we find that the g-factors of the one-electron and three-electron qubits have an approximately linear but opposite dependence as a function of the applied dc electric field. We develop a theory to explain this g-factor behavior based on the spin-valley coupling that results from the sharp interface. The outer "shell" electron in the three-electron qubit exists in the higher of the two available conduction-band valley states, in contrast with the one-electron case, where the electron is in the lower valley. We formulate a modified effective mass theory and propose that inter-valley spin-flip tunneling dominates over intra-valley spin-flips in this system, leading to a direct correlation between the spin-orbit coupling parameters and the g-factors in the two valleys. In addition to offering all-electrical tuning for single-qubit gates, the g-factor physics revealed here for one-electron and three-electron qubits offers potential opportunities for new qubit control approaches.

cond-mat.mes-hall↗

arXiv2015

Non-exponential Fidelity Decay in Randomized Benchmarking with Low-Frequency Noise

We show that non-exponential fidelity decays in randomized benchmarking experiments on quantum dot qubits are consistent with numerical simulations that incorporate low-frequency noise. By expanding standard randomized benchmarking analysis to this experimental regime, we find that such non-exponential decays are better modeled by multiple exponential decay rates, leading to an instantaneous control fidelity for isotopically-purified-silicon MOS quantum dot qubits which can be as high as 99.9% when low-frequency noise conditions and system calibrations are favorable. These advances in qubit characterization and validation methods underpin the considerable prospects for silicon as a qubit platform for fault-tolerant quantum computation.

quant-ph↗

arXiv2014

A Two Qubit Logic Gate in Silicon

Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have led to an impressive array of qubit realizations, including trapped ions \cite{Brown2011}, superconducting circuits \cite{Barends2014}, single photons\cite{Kok2007}, single defects or atoms in diamond \cite{Waldherr2014, Dolde2014} and silicon \cite{Muhonen2014}, and semiconductor quantum dots \cite{Veldhorst2014}, all with single qubit fidelities exceeding the stringent thresholds required for fault-tolerant quantum computing \cite{Fowler2012}. Despite this, high-fidelity two-qubit gates in the solid-state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits \cite{Barends2014}, as semiconductor systems have suffered from difficulties in coupling qubits and dephasing \cite{Nowack2011, Brunner2011, Shulman2012}. Here, we show that these issues can be eliminated altogether using single spins in isotopically enriched silicon\cite{Itoh2014} by demonstrating single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the original Loss-DiVincenzo proposal \cite{Loss1998}. We realize CNOT gates via either controlled rotation (CROT) or controlled phase (CZ) operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is employed in the two-qubit CZ gate. The speed of the two-qubit CZ operations is controlled electrically via the detuning energy and we find that over 100 two-qubit gates can be performed within a two-qubit coherence time of 8 \textmu s, thereby satisfying the criteria required for scalable quantum computation.

cond-mat.mes-hall↗

arXiv2014

An addressable quantum dot qubit with fault-tolerant control fidelity

Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges in coupling such qubits and addressing them individually. Conversely, lithographically defined quantum dots have an exchange coupling that can be precisely engineered, but strong coupling to noise has severely limited their dephasing times and control fidelities. Here we combine the best aspects of both spin qubit schemes and demonstrate a gate-addressable quantum dot qubit in isotopically engineered silicon with a control fidelity of 99.6%, obtained via Clifford based randomized benchmarking and consistent with that required for fault-tolerant quantum computing. This qubit has orders of magnitude improved coherence times compared with other quantum dot qubits, with T_2* = 120 mus and T_2 = 28 ms. By gate-voltage tuning of the electron g*-factor, we can Stark shift the electron spin resonance (ESR) frequency by more than 3000 times the 2.4 kHz ESR linewidth, providing a direct path to large-scale arrays of addressable high-fidelity qubits that are compatible with existing manufacturing technologies.

cond-mat.mes-hall↗

arXiv2014

Charge State Hysteresis in Semiconductor Quantum Dots

Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.

cond-mat.mes-hall↗

arXiv2013

Coulomb interaction and valley-orbit coupling in Si quantum dots

The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2 <= N <= 4, showing that, counterintuitively, electron-electron interaction effects on the valley-orbit coupling are negligible. For N=2 they are suppressed by valley interference, for N=3 they vanish due to spinor overlaps, and for N = 4 they cancel between different pairs of electrons. To corroborate our theoretical findings, we examine the experimental energy spectrum of a few-electron metal-oxide-semiconductor quantum dot. The measured spin-valley state filling sequence in a magnetic field reveals that the valley-orbit coupling is definitively unaffected by the occupation number.

cond-mat.mes-hall↗

arXiv2013

Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting

Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we demonstrate that valley separation can be accurately tuned via electrostatic gate control in a metal-oxide-semiconductor quantum dot, providing splittings spanning 0.3 - 0.8 meV. The splitting varies linearly with applied electric field, with a ratio in agreement with atomistic tight-binding predictions. We demonstrate single-shot spin readout and measure the spin relaxation for different valley configurations and dot occupancies, finding one-electron lifetimes exceeding 2 seconds. Spin relaxation occurs via phonon emission due to spin-orbit coupling between the valley states, a process not previously anticipated for silicon quantum dots. An analytical theory describes the magnetic field dependence of the relaxation rate, including the presence of a dramatic rate enhancement (or hot-spot) when Zeeman and valley splittings coincide.

cond-mat.mes-hall↗

arXiv2012

Orbital and valley state spectra of a few-electron silicon quantum dot

Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra of a few-electron silicon metal-oxide-semiconductor quantum dot using dynamic charge sensing and pulsed-voltage spectroscopy. The occupancy of the quantum dot is probed down to the single-electron level using a nearby single-electron transistor as a charge sensor. The energy of the first orbital excited state is found to decrease rapidly as the electron occupancy increases from N=1 to 4. By monitoring the sequential spin filling of the dot we extract a valley splitting of ~230 μeV, irrespective of electron number. This indicates that favorable conditions for qubit operation are in place in the few-electron regime.

cond-mat.mes-hall↗

arXiv2012

Multi-scaling mix and non-universality between population and facility density

The distribution of facilities is closely related to our social economic activities. Recent studies have reported a scaling relation between population and facility density with the exponent depending on the type of facility. In this paper, we show that generally this exponent is not universal for a specific type of facility. Instead by using Chinese data we find that it increases with Per Capital GDP. Thus our observed scaling law is actually a mixture of some multi-scaling relations. This result indicates that facilities may change their public or commercial attributes according to the outside environment. We argue that this phenomenon results from the unbalanced regional economic level and suggest a modification for previous model by introducing consuming capacity. The modified model reproduces most of our observed properties.

physics.soc-ph↗

arXiv2011

Dynamically controlled charge sensing of a few-electron silicon quantum dot

We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive and robust detection of the charge state of the quantum dot, even in the presence of charge drifts and random charge rearrangements. The sensor enables the occupancy of the quantum dot to be probed down to the single electron level.

cond-mat.mes-hall↗

arXiv2011

Spin filling of valley-orbit states in a silicon quantum dot

We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory and placing a lower bound on the valley splitting. Our results provide optimism for the realization in the near future of spin qubits based on silicon quantum dots.

cond-mat.mes-hall↗

arXiv2011

Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot

Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle, leading to the well-know Pauli spin blockade of electron transport for triplet states. Coherent spin states would be optimally preserved in an environment free of nuclear spins, which is achievable in silicon by isotopic purification. Here we report on a deliberately engineered, gate-defined silicon metal-oxide-semiconductor double quantum dot system. The electron occupancy of each dot and the inter-dot tunnel coupling are independently tunable by electrostatic gates. At weak inter-dot coupling we clearly observe Pauli spin blockade and measure a large intra-dot singlet-triplet splitting $>$ 1 meV. The leakage current in spin blockade has a peculiar magnetic field dependence, unrelated to electron-nuclear effects and consistent with the effect of spin-flip cotunneling processes. The results obtained here provide excellent prospects for realizing singlet-triplet qubits in silicon.

cond-mat.mes-hall↗

arXiv2009

Electron spin blockade and singlet-triplet transition in a silicon single electron transistor

We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact channel and by the potential barriers from negatively charged interface traps. The magnetic field dependence of the excitation spectrum is primarily driven by the Zeeman effect. In the two-electron singlet-triplet (ST) transition, electron-electron Coulomb interaction plays a significant role. The evolution of Coulomb blockade peaks with magnetic field B is also owing to the Zeeman splitting with no obvious orbital effect up to 9 T. The filling pattern shows an alternate spin-up-spin-down sequence. The amplitude spectroscopy allows for the observation of the spin blockade effect, where the two-electron system forms a singlet state at low fields, and the spin polarized injection from the lead reduces the tunneling conductance by a factor of 8. At a higher magnetic field, due to the ST transition, the spin blockade effect is lifted and the conductance is fully recovered.

cond-mat.mes-hall↗

arXiv2005

Observation of one electron charge in an enhancement-mode InAs single electron transistor at 4.2K

We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion regime in a single-top-gate transistor configuration. We have observed large size quantization and Coulomb charging energies over 10meV. This quantum dot design can be especially important for scalable quantum computing.

cond-mat.other↗

arXiv2005

Scalable Quantum Computing with "Enhancement" Quantum Dots

We propose a novel scheme of solid state realization of a quantum computer based on single spin "enhancement mode" quantum dots as building blocks. In the enhancement quantum dots, just one electron can be brought into initially empty dot, in contrast to depletion mode dots based on expelling of electrons from multi-electron dots by gates. The quantum computer architectures based on depletion dots are confronted by several challenges making scalability difficult. These challenges can be successfully met by the approach based on ehnancement mode, capable of producing square array of dots with versatile functionalities. These functionalities allow transportation of qubits, including teleportation, and error correction based on straightforward one- and two-qubit operations. We describe physical properties and demonstrate experimental characteristics of enhancement quantum dots and single-electron transistors based on InAs/GaSb composite quantum wells. We discuss the materials aspects of quantum dot quantum computing, including the materials with large spin splitting such as InAs, as well as perspectives of enhancement mode approach in materials such as Si.

quant-ph↗