Observation of one electron charge in an enhancement-mode InAs single electron transistor at 4.2K

G. M. Jones; B. H. Hu; C. H. Yang; M. J. Yang; Y. B. Lyanda-Geller

doi:10.1063/1.2202100

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Observation of one electron charge in an enhancement-mode InAs single electron transistor at 4.2K

G. M. Jones·B. H. Hu·C. H. Yang·M. J. Yang·Y. B. Lyanda-Geller

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Abstract

We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion regime in a single-top-gate transistor configuration. We have observed large size quantization and Coulomb charging energies over 10meV. This quantum dot design can be especially important for scalable quantum computing.

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G. M. Jones, B. H. Hu, C. H. Yang, M. J. Yang, Y. B. Lyanda-Geller. 2005-09-28. Observation of one electron charge in an enhancement-mode InAs single electron transistor at 4.2K. https://doi.org/10.1063/1.2202100

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