arXiv subjects

C. M. Marcus

Publications and source records attributed to C. M. Marcus.

At least 145 records · Page 8Linked to original sources

arXiv2004

Pulsed-gate measurements of the singlet-triplet relaxation time in a two-electron double quantum dot

A pulsed-gate technique with charge sensing is used to measure the singlet-triplet relaxation time for nearly-degenerate spin states in a two-electron double quantum dot. Transitions from the (1,1) charge occupancy state to the (0,2) state, measured as a function of pulse cycle duration and magnetic field, allow the (1,1) singlet-triplet relaxation time (~70 microseconds) and the (0,2) singlet-triplet splitting to be measured. The use of charge sensing rather than current measurement allows long relaxation times to be readily probed.

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arXiv2004

Singlet-triplet spin blockade and charge sensing in a few-electron double quantum dot

Singlet-triplet spin blockade in a few-electron lateral double quantum dot is investigated using simultaneous transport and charge-sensing measurements. Transport from the (1,1) to the (0,2) electron occupancy states is strongly suppressed relative to the opposite bias [(0,2) to (1,1)]. At large bias, spin blockade ceases as the (0,2) triplet state enters the transport window, giving a direct measure of exchange splitting as a function of magnetic field. A simple model for current and steady-state charge distribution in spin-blockade conditions is developed and found to be in excellent agreement with experiment.

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arXiv2004

Zero-field splitting of Kondo resonances in a carbon nanotube quantum dot

We present low-temperature electron transport measurements on a single-wall carbon nanotube quantum dot exhibiting Kondo resonances at low temperature. Contrary to the usual behavior for the spin-1/2 Kondo effect we find that the temperature dependence of the zero bias conductance is nonmonotonic. In nonlinear transport measurements low-energy splittings of the Kondo resonances are observed at zero magnetic field. We suggest that these anomalies reflect interactions between the nanotube and a magnetic (catalyst) particle. The nanotube device may effectively act as a ferromagnetically contacted Kondo dot.

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arXiv2004

Photovoltaic and Rectification Currents in Quantum Dots

We investigate theoretically and experimentally the statistical properties of dc current through an open quantum dot subject to ac excitation of a shape-defining gate. The symmetries of rectification current and photovoltaic current with respect to applied magnetic field are examined. Theory and experiment are found to be in good agreement throughout a broad range of frequency and ac power, ranging from adiabatic to nonadiabatic regimes.

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arXiv2004

Controlling Spin Qubits in Quantum Dots

We review progress on the spintronics proposal for quantum computing where the quantum bits (qubits) are implemented with electron spins. We calculate the exchange interaction of coupled quantum dots and present experiments, where the exchange coupling is measured via transport. Then, experiments on single spins on dots are described, where long spin relaxation times, on the order of a millisecond, are observed. We consider spin-orbit interaction as sources of spin decoherence and find theoretically that also long decoherence times are expected. Further, we describe the concept of spin filtering using quantum dots and show data of successful experiments. We also show an implementation of a read out scheme for spin qubits and define how qubits can be measured with high precision. Then, we propose new experiments, where the spin decoherence time and the Rabi oscillations of single electrons can be measured via charge transport through quantum dots. Finally, all these achievements have promising applications both in conventional and quantum information processing.

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arXiv2004

Anomalous Conductance Quantization in Carbon Nanotubes

Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately e2/h, the quantum of conductance for a single (non-degenerate) mode. Plateau structure is investigated as a function of bias voltage, temperature, and magnetic field. We speculate on the origin of this surprising quantization, which appears to lack band and spin degeneracy.

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arXiv2004

Cotunneling Spectroscopy in Few-Electron Quantum Dots

Few-electron quantum dots are investigated in the regime of strong tunneling to the leads. Inelastic cotunneling is used to measure the two-electron singlet-triplet splitting above and below a magnetic field driven singlet-triplet transition. Evidence for a non-equilibrium two-electron singlet-triplet Kondo effect is presented. Cotunneling allows orbital correlations and parameters characterizing entanglement of the two-electron singlet ground state to be extracted from dc transport.

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arXiv2004

Manipulation of a single charge in a double quantum dot

We manipulate a single electron in a fully tunable double quantum dot using microwave excitation. Under resonant conditions, microwaves drive transitions between the (1,0) and (0,1) charge states of the double dot. Local quantum point contact charge detectors enable a direct measurement of the photon-induced change in occupancy of the charge states. From charge sensing measurements, we find T1~16 ns and a lower bound estimate for T2* of 400 ps for the charge two-level system.

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arXiv2004

Voltage Dependence of Spin Polarized Tunneling

A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases with bias, but drops faster and even inverts with voltage when electrons tunnel into it. A bias-dependent free electron model shows that in the former case electrons originate near the Fermi level of the FM with large polarization whereas in the latter, electrons tunnel into hot electron states for which the polarization is significantly reduced. The change in sign is ascribed to the detailed matching of the electron wave function through the tunnel barrier.

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arXiv2004

Tunable Non-local Spin Control in a Coupled Quantum Dot System

The effective interaction between magnetic impurities in metals that can lead to various magnetic ground states often competes with a tendency for electrons near impurities to screen the local moment (Kondo effect). The simplest system exhibiting the richness of this competition, the two-impurity Kondo system, is here realized experimentally in the form of two quantum dots coupled through an open conducting region. We demonstrate non-local spin control by suppressing and splitting Kondo resonances in one quantum dot by changing electron number and coupling of the other dot. Results suggest an approach to non-local spin control relevant to quantum information processing.

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arXiv2004

Differential Charge Sensing and Charge Delocalization in a Tunable Double Quantum Dot

We report measurements of a tunable double quantum dot, operating in the quantum regime, with integrated local charge sensors. The spatial resolution of the sensors is sufficient to allow the charge distribution within the double dot system to be resolved at fixed total charge. We use this readout scheme to investigate charge delocalization as a function of temperature and strength of tunnel coupling, showing that local charge sensing allows an accurate determination of interdot tunnel coupling in the absence of transport.

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arXiv2004

Coulomb-Modified Fano Resonance in a One-Lead Quantum Dot

We investigate a tunable Fano interferometer consisting of a quantum dot coupled via tunneling to a one-dimensional channel. In addition to Fano resonance, the channel shows strong Coulomb response to the dot, with a single electron modulating channel conductance by factors of up to 100. Where these effects coexist, lineshapes with up to four extrema are found. A model of Coulomb-modified Fano resonance is developed and gives excellent agreement with experiment.

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arXiv2004

Latched Detection of Excited States in an Isolated Double Quantum Dot

Pulsed electrostatic gating combined with capacitive charge sensing is used to perform excited state spectroscopy of an electrically isolated double-quantum-dot system. The tunneling rate of a single charge moving between the two dots is affected by the alignment of quantized energy levels; measured tunneling probabilities thereby reveal spectral features. Two pulse sequences are investigated, one of which, termed latched detection, allows measurement of a single tunneling event without repetition. Both provide excited-state spectroscopy without electrical contact to the double-dot system.

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arXiv2003

Orbital Effects of In-Plane Magnetic Fields Probed by Mesoscopic Conductance Fluctuations

We use the high sensitivity to magnetic flux of mesoscopic conductance fluctuations in large quantum dots to investigate changes in the two-dimensional electron dispersion caused by an in-plane magnetic field. In particular, changes in effective mass and the breaking of momentum reversal symmetry in the electron dispersion are extracted quantitatively from correlations of conductance fluctuations. New theory is presented, and good agreement between theory and experiment is found.

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arXiv2003

Locally addressable tunnel barriers within a carbon nanotube

We report the realization and characterization of independently controllable tunnel barriers within a carbon nanotube. The nanotubes are mechanically bent or kinked using an atomic force microscope, and top gates are subsequently placed near each kink. Transport measurements indicate that the kinks form gate-controlled tunnel barriers, and that gates placed away from the kinks have little or no effect on conductance. The overall conductance of the nanotube can be controlled by tuning the transmissions of either the kinks or the metal-nanotube contacts.

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arXiv2003

Entanglement production in a chaotic quantum dot

It has recently been shown theoretically that elastic scattering in the Fermi sea produces quantum mechanically entangled states. The mechanism is similar to entanglement by a beam splitter in optics, but a key distinction is that the electronic mechanism works even if the source is in local thermal equilibrium. An experimental realization was proposed using tunneling between two edge channels in a strong magnetic field. Here we investigate a low-magnetic field alternative, using multiple scattering in a quantum dot. Two pairs of single-channel point contacts define a pair of qubits. If the scattering is chaotic, a universal statistical description of the entanglement production (quantified by the concurrence) is possible. The mean concurrence turns out to be almost independent on whether time-reversal symmetry is broken or not. We show how the concurrence can be extracted from a Bell inequality using low-frequency noise measurements, without requiring the tunneling assumption of earlier work.

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arXiv2003

Local gating of carbon nanotubes

Local effects of multiple electrostatic gates placed beneath carbon nanotubes grown by chemical vapor deposition (CVD) are reported. Single-walled carbon nanotubes were grown by CVD from Fe catalyst islands across thin Mo "finger gates" (150 x 10nm). Prior to tube growth, several finger gates were patterned lithogrpahically and subsequently coated with a patterned high-k dielectric using low-temperature atomic layer deposition. Transport measurements demonstrate that local finger gates have a distinct effect from a global backgate.

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arXiv2003

A Low-Temperature Atomic Layer Deposition Liftoff Method for Microelectronic and Nanoelectronic Applications

We report a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD). The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and minimum feature size. Films were deposited at 100-150C using several different precursors and patterned using either PMMA or photoresist. The low deposition temperature permits uniform film growth without significant outgassing or hardbaking of resist layers. A liftoff technique presented here gives sharp step edges with edge roughness as low as ~10 nm. We also measure dielectric constants (k) and breakdown fields for the high-k materials aluminum oxide (k ~ 8-9), hafnium oxide (k ~ 16-19) and zirconium oxide (k ~ 20-29), grown under similar low temperature conditions.

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