arXiv subjects

C. P. Michael

Publications and source records attributed to C. P. Michael.

5 recordsLinked to original sources

arXiv2019

CMOS-compatible, piezo-optomechanically tunable photonics for visible wavelengths and cryogenic temperatures

We demonstrate a platform for phase and amplitude modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators. The platform, fabricated in a CMOS foundry, enables scalable active photonic integrated circuits for visible wavelengths, and the piezoelectric actuation functions without performance degradation down to cryogenic temperatures. As an example of the potential of the platform, we demonstrate a compact (~40 μm diameter) silicon nitride ring resonator modulator operating at 780 nm with intrinsic quality factors in excess of 1.5 million, >10 dB change in extinction ratio with 2 V applied, a switching time less than 4 ns, and a switching energy of 0.5 pJ/bit. We characterize the exemplary device at room temperature and 7 K. At 7 K, the device obtains a resistance of approximately 20 Teraohms, allowing it to operate with sub-picowatt electrical power dissipation. We further demonstrate a Mach-Zehnder modulator constructed in the same platform with piezoelectrically tunable phase shifting arms, with 750 ns switching time constant and 20 nW steady-state power dissipation at room temperature.

physics.app-ph↗

arXiv2007

Geometric Suppression of Single-Particle Energy Spacings in Quantum Antidots

Quantum Antidot (AD) structures have remarkable properties in the integer quantum Hall regime, exhibiting Coulomb-blockade charging and the Kondo effect despite their open geometry. In some regimes a simple single-particle (SP) model suffices to describe experimental observations while in others interaction effects are clearly important, although exactly how and why interactions emerge is unclear. We present a combination of experimental data and the results of new calculations concerning SP orbital states which show how the observed suppression of the energy spacing between states can be explained through a full consideration of the AD potential, without requiring any effects due to electron interactions such as the formation of compressible regions composed of multiple states, which may occur at higher magnetic fields. A full understanding of the regimes in which these effects occur is important for the design of devices to coherently manipulate electrons in edge states using AD resonances.

cond-mat.mes-hall↗

arXiv2007

Surface Encapsulation for Low-Loss Silicon Photonics

Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose. Based on previous work in silicon photovoltaics, coatings of SiNx and SiO2 are applied under varying deposition and annealing conditions. A short dry thermal oxidation followed by a long high-temperature N2 anneal is found to be most effective at long-term encapsulation and reduction of interface absorption. Minimization of the optical loss is attributed to simultaneous reduction in sub-bandgap silicon surface states and hydrogen in the capping material.

physics.optics↗

arXiv2007

An optical fiber-taper probe for wafer-scale microphotonic device characterization

A small depression is created in a straight optical fiber taper to form a local probe suitable for studying closely spaced, planar microphotonic devices. The tension of the "dimpled" taper controls the probe-sample interaction length and the level of noise present during coupling measurements. Practical demonstrations with high-Q silicon microcavities include testing a dense array of undercut microdisks (maximum Q = 3.3x10^6) and a planar microring (Q = 4.8x10^6).

physics.optics↗

arXiv2006

Wavelength- and material-dependent absorption in GaAs and AlGaAs microcavities

The quality factors of modes in nearly identical GaAs and Al_{0.18}Ga_{0.82}As microdisks are tracked over three wavelength ranges centered at 980 nm, 1460 nm, and 1600 nm, with quality factors measured as high as 6.62x10^5 in the 1600-nm band. After accounting for surface scattering, the remaining loss is due to sub-bandgap absorption in the bulk and on the surfaces. We observe the absorption is, on average, 80 percent greater in AlGaAs than in GaAs and in both materials is 540 percent higher at 980 nm than at 1600nm.

physics.optics↗