arXiv subjects

Can-Li Song

Publications and source records attributed to Can-Li Song.

66 records · Page 4Linked to original sources

arXiv2015

Molecular beam epitaxy growth and scanning tunneling microscopy study of TiSe$_2$ ultrathin films

Molecular beam epitaxy is used to grow TiSe2 ultrathin films on graphitized SiC(0001) substrate. TiSe2films proceed via a nearly layer-by-layer growth mode and exhibit two dominant types of defects, identified as Se vacancy and interstitial, respectively. By means of scanning tunneling microscopy, we demonstrate that the well-established charge density waves can survive in single unit-cell (one triple layer) regime, and find a gradual reduction in their correlation length as the density of surface defects in TiSe2 ultrathin films increases. Our findings offer important insights into the nature of charge density wave in TiSe2, and also pave a material foundation for potential applications based on the collective electronic states.

cond-mat.mtrl-sci↗

arXiv2015

Spin-Polarized Quantum Well States on Bi$_{2-x}$Fe$_x$Se$_3$

Low temperature scanning tunneling microscopy is used to image the doped topological insulator Bi$_{2-x}$Fe$_x$Se$_3$. Interstitial Fe defects allow the detection of quasiparticle interference (QPI), and the reconstruction of the empty state band structure. Quantitative comparison between measured data and density functional theory calculations reveals the unexpected coexistence of quantum well states (QWS) with topological surface states (TSS) on the atomically clean surface of Bi$_{2-x}$Fe$_x$Se$_3$. Spectroscopic measurements quantify the breakdown of linear dispersion due to hexagonal warping. Nonetheless, both QWS and TSS remain spin-polarized and protected from backscattering to almost 1 eV above the Dirac point, suggesting their utility for spin-based applications.

cond-mat.mtrl-sci↗

arXiv2015

Detection of a superconducting phase in a two-atom layer of hexagonal Ga film grown on semiconducting GaN(0001)

The recent observation of superconducting state at atomic scale has motivated the pursuit of exotic condensed phases in two-dimensional (2D) systems. Here we report on a superconducting phase in two-monolayer crystalline Ga films epitaxially grown on wide band-gap semiconductor GaN(0001). This phase exhibits a hexagonal structure and only 0.552 nm in thickness, nevertheless, brings about a superconducting transition temperature Tc as high as 5.4 K, confirmed by in situ scanning tunneling spectroscopy, and ex situ electrical magneto-transport and magnetization measurements. The anisotropy of critical magnetic field and Berezinski-Kosterlitz-Thouless-like transition are observed, typical for the 2D superconductivity. Our results demonstrate a novel platform for exploring atomic-scale 2D superconductor, with great potential for understanding of the interface superconductivity.

cond-mat.supr-con↗

arXiv2014

Imaging the Electron-Boson Coupling in Superconducting FeSe

Scanning tunneling spectroscopy has been used to reveal signatures of a bosonic mode in the local quasiparticle density of states of superconducting FeSe films. The mode appears below Tc as a 'dip-hump' feature at energy Ω~ 4.7 kBTc beyond the superconducting gap Δ. Spectra on strained regions of the FeSe films reveal simultaneous decreases in Δand Ω. This contrasts with all previous reports on other high-Tc superconductors, where Δlocally anti-correlates with Ω. A local strong coupling model is found to reconcile the discrepancy well, and to provide a unified picture of the electron-boson coupling in unconventional superconductors.

cond-mat.supr-con↗

arXiv2013

Dopant Clustering, Electronic Inhomogeneity, and Vortex Pinning in Iron-Based Superconductors

We use scanning tunneling microscopy to map the surface structure, nanoscale electronic inhomogeneity, and vitreous vortex phase in the hole-doped superconductor Sr$_{0.75}$K$_{0.25}$Fe$_2$As$_2$ with $T_c$=32 K. We find the low-$T$ cleaved surface is dominated by a half-Sr/K termination with $1\times 2$ ordering and ubiquitous superconducting gap, while patches of gapless, unreconstructed As termination appear rarely. The superconducting gap varies by $σ/\barΔ$=16% on a $\sim$3 nm length scale, with average $2\barΔ/k_B T_c=3.6$ in the weak coupling limit. The vortex core size provides a measure of the superconducting coherence length $ξ$=2.3 nm. We quantify the vortex lattice correlation length at 9 T in comparison to several iron-based superconductors. The comparison leads us to suggest the importance of dopant size mismatch as a cause of dopant clustering, electronic inhomogeneity, and strong vortex pinning.

cond-mat.supr-con↗

arXiv2013

Nanoscale Surface Element Identification and Dopant Homogeneity in the High-$T_c$ Superconductor Pr$_x$Ca$_{1-x}$Fe$_2$As$_2$

We use scanning tunneling microscopy to determine the surface structure and dopant distribution in Pr$_x$Ca$_{1-x}$Fe$_2$As$_2$, the highest-$T_c$ member of the 122 family of iron-based superconductors. We identify the cleaved surface termination by mapping the local tunneling barrier height, related to the work function. We image the individual Pr dopants responsible for superconductivity, and show that they do not cluster, but in fact repel each other at short length scales. We therefore suggest that the low volume fraction high-$T_c$ superconducting phase is unlikely to originate from Pr inhomogeneity.

cond-mat.supr-con↗

arXiv2013

Pairing insights in iron-based superconductors from scanning tunneling microscopy

Scanning tunneling microscopy (STM) has made tremendous progress in the study and understanding of both classical and unconventional superconductors. This has motivated a rapidly growing effort to apply the same techniques to the iron-based high-Tc superconductors since their discovery in 2008. Five years have brought exciting advances in imaging and spectroscopic investigation of this new class of materials. In this review, we focus on several recent STM contributions to the identification of the gap symmetry and pairing glue. We highlight the unique capabilities and challenges still ahead for STM studies of iron-based superconductors.

cond-mat.supr-con↗

arXiv2012

Suppression of Superconductivity by Twin Boundaries in FeSe

Low-temperature scanning tunneling microscopy and spectroscopy are employed to investigate twin boundaries in stoichiometric FeSe films grown by molecular beam epitaxy. Twin boundaries can be unambiguously identified by imaging the 90° change in the orientation of local electronic dimers from Fe site impurities on either side. Twin boundaries run at approximately 45° to the Fe-Fe bond directions, and noticeably suppress the superconducting gap, in contrast with the recent experimental and theoretical findings in other iron pnictides. Furthermore, vortices appear to accumulate on twin boundaries, consistent with the degraded superconductivity there. The variation in superconductivity is likely caused by the increased Se height in the vicinity of twin boundaries, providing the first local evidence for the importance of this height to the mechanism of superconductivity.

cond-mat.supr-con↗

arXiv2012

Anisotropic vortex lattice structures in the FeSe superconductor

In the recent work by Song et al. [Science 332, 1410 (2011)], the scanning tunneling spectroscopy experiment in the stoichiometric FeSe reveals evidence for nodal superconductivity and strong anisotropy. The nodal structure can be explained with the extended s-wave pairing structure with the mixture of the $s_{x^2+y^2}$ and $s_{x^2y^2}$ pairing symmetries. We calculate the anisotropic vortex structure by using the self-consistent Bogoliubov-de Gennes mean-field theory. In considering the absence of magnetic ordering in the FeSe at the ambient pressure, orbital ordering is introduced, which breaks the $C_4$ lattice symmetry down to $C_2$, to explain the anisotropy in the vortex tunneling spectra.

cond-mat.supr-con↗

arXiv2012

Interface induced high temperature superconductivity in single unit-cell FeSe films on SrTiO3

Searching for superconducting materials with high transition temperature (TC) is one of the most exciting and challenging fields in physics and materials science. Although superconductivity has been discovered for more than 100 years, the copper oxides are so far the only materials with TC above 77 K, the liquid nitrogen boiling point. Here we report an interface engineering method for dramatically raising the TC of superconducting films. We find that one unit-cell (UC) thick films of FeSe grown on SrTiO3 (STO) substrates by molecular beam epitaxy (MBE) show signatures of superconducting transition above 50 K by transport measurement. A superconducting gap as large as 20 meV of the 1 UC films observed by scanning tunneling microcopy (STM) suggests that the superconductivity could occur above 77 K. The occurrence of superconductivity is further supported by the presence of superconducting vortices under magnetic field. Our work not only demonstrates a powerful way for finding new superconductors and for raising TC, but also provides a well-defined platform for systematic study of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.

cond-mat.supr-con↗

arXiv2010

Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit

Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work, thickness dependent band structure of molecular beam epitaxy grown ultrathin films of Bi2Se3 is investigated by in situ angle-resolved photoemission spectroscopy. An energy gap is observed for the first time in the topologically protected metallic surface states of bulk Bi2Se3 below the thickness of six quintuple layers, due to the coupling between the surface states from two opposite surfaces of the Bi2Se3 film. The gapped surface states exhibit sizable Rashba-type spin-orbit splitting, due to breaking of structural inversion symmetry induced by SiC substrate. The spin-splitting can be controlled by tuning the potential difference between the two surfaces.

cond-mat.mtrl-sci↗

arXiv2010

Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\pm 0.2x1011/cm2, and become a bulk insulator at a thickness of 10 quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

cond-mat.mes-hall↗