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arXiv · 1007.0809

Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Can-Li Song·Yi-Lin Wang·Ye-Ping Jiang·Yi Zhang·Cui-Zu Chang·Lili Wang·Ke He·Xi Chen·Jin-Feng Jia·Yayu Wang·Zhong Fang·Xi Dai·Xin-Cheng Xie·Xiao-Liang Qi·Shou-Cheng Zhang·Qi-Kun Xue·Xucun Ma
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Abstract

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\pm 0.2x1011/cm2, and become a bulk insulator at a thickness of 10 quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

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Can-Li Song, Yi-Lin Wang, Ye-Ping Jiang, Yi Zhang, Cui-Zu Chang, Lili Wang, Ke He, Xi Chen, Jin-Feng Jia, Yayu Wang, Zhong Fang, Xi Dai, Xin-Cheng Xie, Xiao-Liang Qi, Shou-Cheng Zhang, Qi-Kun Xue, Xucun Ma. 2010-07-06. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy. https://doi.org/10.1063/1.3494595

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