arXiv subjects

Canli Song

Publications and source records attributed to Canli Song.

14 recordsLinked to original sources

arXiv2019

Coulomb gap induced by electronic correlation and enlarged superconducting gap in laterally confined Pb islands grown on SrTiO3

We report high-resolution scanning tunneling microscopy (STM) study of nano-sized Pb islands grown on SrTiO3, where three distinct types of gaps with different energy scales are revealed. At low temperature, an enlarged superconducting gap (Δs) emerges while there is no enhancement in superconducting transition temperature (Tc), giving rise to a larger BCS ratio 2Δs/kBTc ~ 6.22. The strong coupling here may originate from the electron-phonon coupling on the metal-oxide interface. As the superconducting gap is suppressed under applied magnetic field or at elevated temperature, Coulomb gap and pseudogap appear, respectively. The Coulomb gap is sensitive to the lateral size of Pb islands, indicating that quantum size effect is able to influence electronic correlation, which is usually ignored in low-dimensional superconductivity. Our experimental results shall shed important light on the interplay between quantum size effect and correlations in nano-sized superconductors.

cond-mat.supr-con↗

arXiv2019

Edge states at nematic domain walls in FeSe films

Quantum spin Hall (QSH) effect is an intriguing phenomenon arising from the helical edge states in two-dimensional topological insulators. We use molecular beam epitaxy (MBE) to prepare FeSe films with atomically sharp nematic domain boundaries, where tensile strains, nematicity suppression and topological band inversion are simultaneously achieved. Using scanning tunneling microscopy (STM), we observe edge states at the Fermi level that spatially distribute as two distinct strips in the vicinity of the domain boundaries. At the endpoint of the boundaries, a bound state at the Fermi level is further observed. The topological origin of the edge states is supported by density functional theory calculations. Our findings not only demonstrate a candidate for QSH states, but also provide a new pathway to realize topological superconductivity in a single-component film.

cond-mat.supr-con↗

arXiv2018

Realizing an Epitaxial Stanene with an Insulating Bandgap

Stanene, a single atomic layer of Sn in a honeycomb lattice, is predicted a candidate wide bandgap two-dimensional (2D) topological insulator and can host intriguing topological states of matter such as quantum anomalous Hall effect and topological superconductivity with different surface modifications. Despite intensive research efforts, one still cannot obtain bulk-insulating stanene samples-a prerequisite for any transport studies and applications of stanene. Here we show the experimental realization of an epitaxial stanene with an insulating bulk bandgap by using PbTe(111) substrates. With low-temperature molecular beam epitaxy, we are able to grow single layer stanene on PbTe(111). In-situ angle-resolved photoemission spectroscopy shows the characteristic stanene bands with its Fermi level lying in the bandgap. Doping Sr in PbTe removes the substrate states located in the stanene gap, resulting in a stanene sample with truly insulating bulk. This experimental progress paves the way for studies of stanene-based topological quantum effects.

cond-mat.mtrl-sci↗

arXiv2018

Experimental realization of an intrinsic magnetic topological insulator

Intrinsic magnetic topological insulator (TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remains elusive experimentally so far. Here, we report the experimental realization of high-quality thin films of an intrinsic magnetic TI---MnBi$_2$Te$_4$---by alternate growth of a Bi$_2$Te$_3$ quintuple-layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators in a well-controlled way.

cond-mat.mtrl-sci↗

arXiv2018

Quantum anomalous Hall multilayers grown by molecular beam epitaxy

Quantum anomalous Hall (QAH) effect is a quantum Hall effect that occurs without the need of external magnetic field. A system composed of multiple parallel QAH layers is an effective high Chern number QAH insulator and the key to the applications of the dissipationless chiral edge channels in low energy consumption electronics. Such a QAH multilayer can also be engineered into other exotic topological phases such as a magnetic Weyl semimetal with only one pair of Weyl points. This work reports the first experimental realization of QAH multilayers in the superlattices composed of magnetically doped (Bi,Sb)$_2$Te$_3$ topological insulator and CdSe normal insulator layers grown by molecular beam epitaxy. The obtained multilayer samples show quantized Hall resistance $h/Ne$$^2$, where $h$ is the Planck's constant, $e$ is the elementary charge and $N$ is the number of the magnetic topological insulator layers, resembling a high Chern number QAH insulator.

cond-mat.mtrl-sci↗

arXiv2016

Interface induced high temperature superconductivity in single unit-cell FeSe films on SrTiO3(110)

We report high temperature superconductivity in one unit-cell (1-UC) FeSe films grown on STO(110) substrate by molecular beam epitaxy. By in-situ scanning tunneling spectroscopy measurement, we observed a superconducting gap as large as 17 meV. Transport measurements on 1-UC FeSe/STO(110) capped with FeTe layers reveal superconductivity with an onset TC of 31.6 K and an upper critical magnetic field of 30.2 T. We also find that the TC can be further increased by an external electric field, but the effect is smaller than that on STO(001) substrate. The study points out the important roles of interface related charge transfer and electron-phonon coupling in the high temperature superconductivity of FeSe/STO.

cond-mat.supr-con↗

arXiv2015

Superconductivity dichotomy in K-coated single and double unit cell FeSe films on SrTiO3

We report the superconductivity evolution of one unit cell (1-UC) and 2-UC FeSe films on SrTiO3(001) substrates with potassium (K) adsorption. By in situ scanning tunneling spectroscopy measurement, we find that the superconductivity in 1-UC FeSe films is continuously suppressed with increasing K coverage, whereas non-superconducting 2-UC FeSe films become superconducting with a gap of ~17 meV or ~11 meV depending on whether the underlying 1-UC films are superconducting or not. This work explicitly reveals that the interface electron-phonon coupling is strongly related to the charge transfer at FeSe/STO interface and plays vital role in enhancing Cooper pairing in both 1-UC and 2-UC FeSe films.

cond-mat.supr-con↗

arXiv2015

Interface enhanced electron-phonon coupling and high temperature superconductivity in potassium-coated ultra-thin FeSe films on SrTiO3

Alkali-metal (potassium) adsorption on FeSe thin films with thickness from two unit cells (UC) to 4-UC on SrTiO3 grown by molecular beam epitaxy is investigated with a low-temperature scanning tunneling microscope. At appropriate potassium coverage (0.2-0.3 monolayer), the tunneling spectra of the films all exhibit a superconducting-like gap larger than 11 meV (five times the gap value of bulk FeSe), and two distinct features of characteristic phonon modes at 11 meV and 21 meV. The results reveal the critical role of the interface enhanced electron-phonon coupling for possible high temperature superconductivity in the system and is consistent with recent theories. Our study provides compelling evidence for the conventional pairing mechanism for this type of heterostructure superconducting systems.

cond-mat.supr-con↗

arXiv2013

Mass acquisition of Dirac fermions in Cr-doped topological insulator Sb2Te3 films

We introduce time-reversal-symmetry breaking by doping Cr atoms into the topmost quintuple layer or into the bulk of Sb2Te3 thin films. We find that even at a high Cr-doping level the Landau level spectrum keeps a good quality, enabling the first demonstration of deviation of the zero-mode Landau level, induced by the acquisition of a mass term in the surface states in the presence of surface or bulk magnetic doping. The magnitude of the mass term in the surface states increases with increasing Cr-doping level. Our observation suggests Cr-doped Sb2Te3 is a promising candidate for the realization of the proposed novel magnetoelectric effects.

cond-mat.mtrl-sci↗

arXiv2011

Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3

We report the experimental observation of Landau quantization of molecular beam epitaxy grown Sb2Te3 thin films by a low-temperature scanning tunneling microscope. Different from all the reported systems, the Landau quantization in Sb2Te3 topological insulator is not sensitive to the intrinsic substitutional defects in the films. As a result, a nearly perfect linear energy dispersion of surface states as 2D massless Dirac fermion system is achieved. We demonstrate that 4 quintuple layers are the thickness limit for Sb2Te3 thin film being a 3D topological insulator. The mechanism of the Landau level broadening is discussed in terms of enhanced quasiparticle lifetime.

cond-mat.mtrl-sci↗

arXiv2011

Fermi Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping

High-quality Sb2Te3 films are obtained by molecular beam epitaxy on graphene substrate and investigated by in situ scanning tunneling microscopy/spectroscopy. Intrinsic defects responsible for the natural p-type conductivity of Sb2Te3 are identified to be the Sb vacancies and SbTe antisites in agreement with first-principles calculations. By minimizing defect densities, coupled with a transfer doping by the graphene substrate, the Fermi level of Sb2Te3 thin films can be tuned over the entire range of the bulk band gap. This establishes the necessary condition to explore topological insulator behaviors near the Dirac point.

cond-mat.mtrl-sci↗

arXiv2011

Phase Separation and Magnetic Order in K-doped Iron Selenide Superconductor

Alkali-doped iron selenide is the latest member of high Tc superconductor family, and its peculiar characters have immediately attracted extensive attention. We prepared high-quality potassium-doped iron selenide (KxFe2-ySe2) thin films by molecular beam epitaxy and unambiguously demonstrated the existence of phase separation, which is currently under debate, in this material using scanning tunneling microscopy and spectroscopy. The stoichiometric superconducting phase KFe2Se2 contains no iron vacancies, while the insulating phase has a \surd5\times\surd5 vacancy order. The iron vacancies are shown always destructive to superconductivity in KFe2Se2. Our study on the subgap bound states induced by the iron vacancies further reveals a magnetically-related bipartite order in the superconducting phase. These findings not only solve the existing controversies in the atomic and electronic structures in KxFe2-ySe2, but also provide valuable information on understanding the superconductivity and its interplay with magnetism in iron-based superconductors.

cond-mat.supr-con↗

arXiv2011

Power-Law Decay of Standing Waves on the Surface of Topological Insulators

We propose a general theory on the standing waves (quasiparticle interference pattern) caused by the scattering of surface states off step edges in topological insulators, in which the extremal points on the constant energy contour of surface band play the dominant role. Experimentally we image the interference patterns on both Bi$_2$Te$_3$ and Bi$_2$Se$_3$ films by measuring the local density of states using a scanning tunneling microscope. The observed decay indices of the standing waves agree excellently with the theoretical prediction: In Bi$_2$Se$_3$, only a single decay index of -3/2 exists; while in Bi$_2$Te$_3$ with strongly warped surface band, it varies from -3/2 to -1/2 and finally to -1 as the energy increases. The -1/2 decay indicates that the suppression of backscattering due to time-reversal symmetry does not necessarily lead to a spatial decay rate faster than that in the conventional two-dimensional electron system. Our formalism can also explain the characteristic scattering wave vectors of the standing wave caused by non-magnetic impurities on Bi$_2$Te$_3$.

cond-mat.mes-hall↗

arXiv2010

Landau Quantization of Massless Dirac Fermions in Topological Insulator

The recent theoretical prediction and experimental realization of topological insulators (TI) has generated intense interest in this new state of quantum matter. The surface states of a three-dimensional (3D) TI such as Bi_2Te_3, Bi_2Se_3 and Sb_2Te_3 consist of a single massless Dirac cones. Crossing of the two surface state branches with opposite spins in the materials is fully protected by the time reversal (TR) symmetry at the Dirac points, which cannot be destroyed by any TR invariant perturbation. Recent advances in thin-film growth have permitted this unique two-dimensional electron system (2DES) to be probed by scanning tunneling microscopy (STM) and spectroscopy (STS). The intriguing TR symmetry protected topological states were revealed in STM experiments where the backscattering induced by non-magnetic impurities was forbidden. Here we report the Landau quantization of the topological surface states in Bi_2Se_3 in magnetic field by using STM/STS. The direct observation of the discrete Landau levels (LLs) strongly supports the 2D nature of the topological states and gives direct proof of the nondegenerate structure of LLs in TI. We demonstrate the linear dispersion of the massless Dirac fermions by the square-root dependence of LLs on magnetic field. The formation of LLs implies the high mobility of the 2DES, which has been predicted to lead to topological magneto-electric effect of the TI.

cond-mat.mes-hall↗