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arXiv · 1711.07035

Realizing an Epitaxial Stanene with an Insulating Bandgap

Yunyi Zang·Tian Jiang·Yan Gong·Zhaoyong Guan·Menghan Liao·Zhe Li·Lili Wang·Wei Li·Canli Song·Ding Zhang·Yong Xu·Ke He·Xucun Ma·Shou-Cheng Zhang·Qi-Kun Xue
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Abstract

Stanene, a single atomic layer of Sn in a honeycomb lattice, is predicted a candidate wide bandgap two-dimensional (2D) topological insulator and can host intriguing topological states of matter such as quantum anomalous Hall effect and topological superconductivity with different surface modifications. Despite intensive research efforts, one still cannot obtain bulk-insulating stanene samples-a prerequisite for any transport studies and applications of stanene. Here we show the experimental realization of an epitaxial stanene with an insulating bulk bandgap by using PbTe(111) substrates. With low-temperature molecular beam epitaxy, we are able to grow single layer stanene on PbTe(111). In-situ angle-resolved photoemission spectroscopy shows the characteristic stanene bands with its Fermi level lying in the bandgap. Doping Sr in PbTe removes the substrate states located in the stanene gap, resulting in a stanene sample with truly insulating bulk. This experimental progress paves the way for studies of stanene-based topological quantum effects.

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Yunyi Zang, Tian Jiang, Yan Gong, Zhaoyong Guan, Menghan Liao, Zhe Li, Lili Wang, Wei Li, Canli Song, Ding Zhang, Yong Xu, Ke He, Xucun Ma, Shou-Cheng Zhang, Qi-Kun Xue. 2017-11-19. Realizing an Epitaxial Stanene with an Insulating Bandgap. https://arxiv.org/abs/1711.07035

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