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Carmine Autieri

Publications and source records attributed to Carmine Autieri.

At least 37 records · Page 2Linked to original sources

Relativistic spin-momentum locking in ferromagnets

The relativistic spin-momentum locking has been proven in time-reversal-breaking classes of materials with zero net magnetization in the non-relativistic limit, such as altermagnets and other non-collinear magnets. Using density functional theory calculations, we aim to show relativistic spin-momentum locking in ferromagnets, focusing on a broad class of ferromagnetic materials with magnetic sites connected by rotational symmetry, and compare with fcc Ni. In SrRuO3, the antisymmetric exchange interaction produces a spin canting orthogonal to the easy axis, while in all other cases, spin canting is forbidden. Even when the canted magnetic moment in real space is forbidden, relativistic spin-momentum locking shows sizable contributions in k-space. Using prototypical ferromagnets such as orthorhombic SrRuO3, hexagonal CrTe and CrAs with the NiAs crystal structure, half-Heusler MnPtSb, and fcc Ni, we demonstrate that relativistic spin-momentum locking can generate strong effects in ferromagnets. Subdominant components of centrosymmetric ferro-magnetic materials with magnetic sites connected by rotational symmetry host spin-momentum locking similar to altermagnets, while noncentrosymmetric MnPtSb hosts relativistic p-wave due to the spin-orbit coupling. Fcc Ni shows a more complex behavior with a combination of two spin-momentum locking patterns characteristic of altermagnets. Because ferromagnets typically have larger bandwidths than altermagnets, they provide a promising platform for observing even-wave relativistic spin-momentum locking and associated emergent phenomena. From an application standpoint, relativistic spin-momentum locking governs symmetry-allowed spin Hall currents, spin photocurrents, and other momentum-dependent spin responses in k-space.

cond-mat.mtrl-sci↗

Staggered Dzyaloshinskii-Moriya and canting angle in centrosymmetric altermagnetic and ferromagnetic phases: influence on the anomalous Hall effect and Weyl points

We present a simple methodology to compute the anomalous Hall conductivity (AHC) as a function of the canting angles in ferromagnets and altermagnets, starting from a nonmagnetic Hamiltonian obtained from first-principles calculations that preserves the full symmetry of the crystal structure. Magnetism is introduced by including on-site spin splitting, spin-orbit coupling, and spin-canting angles. As a representative material, we study SrRuO$_3$, which supports spin canting and exhibits a sign change of the AHC. In the ferromagnetic phase, the low-energy AHC is found to be close to zero at the Fermi level, in agreement with experimental observations. We show that the dependence of the AHC on the relevant physical parameters is most pronounced in the central region of the electronic bandwidth. We determine the symmetry-allowed components of the AHC for different magnetic orders in the large family of transition-metal perovskite ABO$_3$ compounds with space group $62$, including the spontaneous in-plane anomalous Hall effect. Within density functional theory, we evaluate the range of spin-canting angles in SrRuO$_3$ and demonstrate that it is suppressed as electronic correlations increase. By analyzing the AHC as a function of the canting angle, we find that the collinear magnetic configurations contribute most to the AHC, while spin canting plays a secondary role in determining its magnitude in non-collinear ferromagnets and altermagnets. However, canting can become relevant and induce a sign change of the AHC when the collinear magnetic state exhibits an AHC close to zero. Finally, we investigate the locations of Weyl points in the Brillouin zone and their evolution as a function of the canting angle.

cond-mat.mtrl-sci↗

Dominant orbital magnetization in the prototypical altermagnet MnTe

Altermagnetism is an unconventional form of antiferromagnetism characterized by momentum-dependent spin polarization of electronic states and zero net magnetization, arising from specific crystalline symmetries. In the presence of spin-orbit coupling (SOC) and broken time-reversal symmetry, altermagnets can exhibit finite net magnetization and anomalous Hall effect (AHE), phenomena typically associated with ferromagnets. Due to the dependence of AHE on magnetization, understanding the interplay between spin and orbital contributions to magnetization is essential for interpreting experiments and designing altermagnetic devices. In this work, we use density functional theory to investigate the intrinsic spin and orbital magnetization of the magnetic ground state of the prototypical altermagnet α-MnTe. We find that SOC induces weak ferromagnetism through spin canting, accompanied by a slight in-plane rotation of the Néel vector. Notably, we identify a significant net orbital magnetization of 0.176 μB per unit cell oriented along the z-axis, while the spin magnetization in the same direction is much smaller at 0.002 μB. By varying the chemical potential, we show that the spin magnetization is tunable through hole doping, whereas the orbital magnetization remains robust against carrier density changes. These results highlight the important role of orbital magnetization and establish its relevance for orbital-based phenomena in altermagnets.

cond-mat.mtrl-sci↗

Dual topology and edge-reconstruction in $α$-Sn

We formulate the tight-binding model for cubic $α$-Sn based on the DFT calculations. In the model, we incorporate a variable bond angle, which allows us to simulate the effect of the in-plane strain. In the bulk, we demonstrate the presence of the $\mathbb{Z}_2$ topological invariant and a non-zero mirror Chern number, making $α$-Sn one of the rare cases where dual topology can be observed. We calculate the topological phase diagram of multi-layer $α$-Sn as a function of strain and number of layers. We find that a non-trivial quantum spin Hall state appears only for compressive strain above five layers of thickness. Quite surprisingly, both in the trivial and non-trivial phases, we find a plethora of edge-states with energies inside the bulk gap of the system. Some of these states are localized at the side surfaces of the slab, some of them prefer top/bottom surfaces and some are localized in the hinges. We trace the microscopic origin of these states back to a minimal model that supports chiral symmetry and multiple one-dimensional winding numbers that take different values in different directions in the Brillouin zone.

cond-mat.mes-hall↗

Magnetic Frustration Enforced Electronic Reconstruction in Ni intercalated NbSe$_{2}$: Suppression of Electronic Orders

We investigate the single crystals of Ni$_{0.19}$NbSe$_2$, revealing that Ni intercalation profoundly alters the physical properties of NbSe$_2$. Magnetic measurements clearly show that the system is magnetically frustrated with antiferromagnetic ordering below 23.5\,K, with an irreversibility temperature near 10\,K, and a magnetic hysteresis with a small net magnetic moment. Overall, the system can be described as an inhomogeneous antiferromagnetic phase with magnetic disorder and magnetic frustration. We found two Curie-Weiss temperatures of -80\,K for the field in the {\it ab}-plane and -137\,K for the field out of plane, which are a consequence of anisotropic interactions in spin space and favor an orientation of the spin along the {\it c}-axis. Temperature-dependent resistivity shows a complete suppression of both charge density waves and superconducting order down to 300\,mK. Angle-resolved photoemission spectroscopy at 84\,K reveals a $\overlineΓ$-centered electron pocket in Ni$_{0.19}$NbSe$_2$, which is absent in pristine NbSe$_2$. The electronic structure results show a shift of the van Hove singularity (VHS), which is the main cause of the suppression of the electronic orders. These results align with recent theoretical predictions that Ni intercalation with cationic disorder favors frustrated antiferromagnetic stripe states, shifts the VHS and reconstructs the Fermi surface in NbSe$_2$. Our findings position Ni$_{0.19}$NbSe$_2$ within a magnetically frustrated, non-superconducting regime, highlighting how partial intercalation and disorder drive complex magnetic order and the Fermi surface reconstruction in low-dimensional quantum materials.

cond-mat.mtrl-sci↗

Relativistic Spin-momentum locking in altermagnets

Spin-momentum locking in altermagnets has been deeply explored in the non-relativistic limit. Including spin-orbit coupling, altermagnets exhibit antisymmetric exchange interactions, leading to spin cantings. Therefore, the spin-momentum locking differs among the three spin components Sx, Sy, and Sz, forming the relativistic spin-momentum locking. We consider orthorhombic YVO3 and hexagonal MnTe. For YVO3, the relativistic locking comprises s-, dxy -, and dxz-wave. In MnTe, the dominant component Sy of MnTe inherits the polarized charge distribution and the non-relativistic spin-momentum locking bulk g-wave, but the breaking of the C6z rotational symmetry by the Neel vector lowers the symmetry from g-wave to d-wave. The relativistic spin-momentum locking for MnTe is composed of dxz-, dyz- and s-wave. Despite small magnitudes in real space, the canted spin components contribute significant spectral weight in k-space, impacting k-space properties such as the spin-Hall conductivity.

cond-mat.mtrl-sci↗

Nature of field-induced transitions and hysteretic magnetoresistance in non-collinear antiferromagnet EuIn2As2

We examine the magnetic and electrical transport properties of the hexagonal EuIn2As2 compound, combining experimental and theoretical results. This compound is predicted to be an axion-insulator from an electronic point of view and an altermagnet while in the collinear magnetic phase. However, experiments indicate that the Fermi level lies within the valence band rather than in the topological gap, potentially leading to the dominance of magnetic properties. Our detailed studies on magnetization and electrical transport support the presence of a broken-helix antiferromagnetic state, which was previously identified by X-ray and neutron diffraction experiments. Notably, we observed within that state a field-induced metamagnetic transition marked by a large hysteresis in magnetoresistance, which turns into a sharp upturn for the magnetic field tilted by 15 degree from the c-axis of the crystal. Combined with theoretical calculations, it is explained that the application of a magnetic field changes the low-resistivity antiferromagnetic domain walls to the high-resistivity domain walls due to the reduction in the Fermi surface sheets interaction area in the domain walls, originating from p-orbitals of As. EuIn2As2, therefore, presents a new case study that broadens the understanding of complex magnetic structures and their influence on electrical transport.

cond-mat.mtrl-sci↗

Theory of bound magnetic polarons in cubic and uniaxial antiferromagnets

Motivated by a recent debate about the origin of remanent magnetization and the corresponding anomalous Hall effect in antiferromagnets and altermagnets, a theory of bound magnetic polarons (BMPs) in anisotropic antiferromagnetic semiconductors is developed. The theory describes quantitatively the experimentally observed magnitude of excess magnetization and its dependence on the magnetic field in cubic antiferromagnetic EuTe. In contrast to the cubic case, our theory predicts the presence of magnetization hysteresis below Néel temperature in antiferromagnets with uniaxial anisotropy. We show, employing material parameters implied by experimental and ab initio results, that the magnitudes of remanent magnetization and the coercive field are in accord with recent experimental observations for altermagnetic hexagonal MnTe. While the altermagnets have an intrinsic contribution to the remanent magnetization and the anomalous Hall effect, our theory explains the origin of an extrinsic contribution. Our findings address, therefore, a question about the relative contribution to the remanent magnetization of bound magnetic polarons and weak ferromagnetism driven by the antisymmetric exchange interaction, the latter weakened by the formation of antiferromagnetic domains. Furthermore, we provide the theory of BMP spontaneous spin splitting, which can be probed optically.

cond-mat.mes-hall↗

Multipole analysis of spin currents in altermagnetic MnTe

Altermagnets, a class of unconventional antiferromagnets where antiparallel spins are connected by combined rotational and translational symmetries, have recently emerged as promising candidates for spintronic applications, as they can efficiently generate spin currents while maintaining vanishing net magnetization. Here, we investigate charge transport and spin currents in $α$-MnTe, a prototypical altermagnet, using symmetry analysis within the multipole framework and fully relativistic first-principles calculations using the Kubo formalism. Our results show that different magnetic configurations with Néel vectors $\hat{N}\parallel y$ and $\hat{N}\parallel x$ in MnTe induce distinct order parameters. This distinction gives rise to spin-momentum locking with different parities and magnetic spin Hall effects (magnetic SHEs) with different anisotropies. Strikingly, our calculations show that the combination of intrinsic spin-orbit coupling and altermagnetic spin splitting yields a large magnetic spin Hall angle of up to 16 \% rivaling or exceeding that of heavy metals such as Pt. On the other hand, the anisotropy of the magnetic SHE provides a practical means to identify the type of order parameter. This establishes, through the powerful framework of multipoles, a general approach for studying transport phenomena that extends to a broader class of altermagnets beyond MnTe.

cond-mat.mtrl-sci↗

Sign competing sources of Berry curvature and anomalous Hall conductance humps in topological ferromagnets

The use of Berry-phase concepts has established a strong link between the anomalous Hall effect (AHE) and the topological character of the Hall currents. However, the occurrence of sign competition in the Berry curvature often hinders the topological origin of the observed anomalous Hall effects. Here, we study a two-dimensional topological ferromagnet with coupled spin and orbital degrees of freedom to assess the anomalous Hall effects in the presence of sign-competing sources of Berry curvature. We show that 2D itinerant topological ferromagnets described by t2g electronic states can generally lead to topological metallic bands marked by a non-zero Chern number. We find that the resulting Berry curvature at the Fermi level exhibits a characteristic anisotropic profile with a non-monotonous angular dependence when the magnetization is reversed. The sign change of the intrinsic contribution to the anomalous Hall conductance can occur together with topological transitions or be driven by the population imbalance of the topological bands. The breaking of the inversion symmetry introduces the orbital Rashba coupling in the system. The interplay between the orbital Rashba and sign competing sources of Berry curvature leads to anomalies in the anomalous Hall conductance at values of magnetic fields for which the magnetization switches its orientation. The humps in topological ferromagnets arise when the anomalous Hall conductivity is small in absolute value and they can be detected only close to the sign-change of the AHE and far from half-filling. This study could be relevant for the family of the topological 2D ferromagnets as well as Weyl ferromagnets, and can particularly account for the variety of unconventional behaviors observed in ultrathin films of SrRuO$_3$.

cond-mat.str-el↗

Tunability of the magnetic properties in Ni intercalated transition metal dichalcogenide NbSe$_2$

We study the magnetic and electronic properties of Ni-intercalated NbSe$_2$.We calculate the magnetic exchanges of Ni$_x$NbSe$_2$ ($x = 1/3, 1/4,$ and $1$) and find that the out-of-plane magnetic coupling depends on the Ni connectivity: it is ferromagnetic when Ni atoms stack on top of each other, and antiferromagnetic otherwise. Focusing on Ni$_{0.25}$NbSe$_2$, we identify a ground-state transition from a stripe antiferromagnetic phase with Kramers degeneracy to a ferromagnetic phase above a critical Coulomb interaction U$_C$. Spin--orbit coupling lowers U$_C$, aligns the easy axis along $z$, and stabilizes collinear AFM and FM states over the competing 120$^\circ$ phase. Ni intercalation also strongly modifies the electronic structure, replacing the $Γ$-point hole pocket of pristine NbSe$_2$ with an electron pocket and shifting the Van Hove singularity away from the Fermi level, thereby suppressing potential instabilities. Finally, we investigate the altermagnetic phase in the broader class T$_{0.25}$MX$_2$, finding that spin--orbit effects induce orbital antiferromagnetism with weak ferromagnetism or ferrimagnetism depending on the Néel vector orientation. Our results demonstrate that Ni-intercalated NbSe$_2$ provides a versatile platform to explore and tune multiple competing magnetic phases that lie close in energy.

cond-mat.mtrl-sci↗

Hybrid d/p-wave altermagnetism in Ca$_{3}$Ru$_{2}$O$_{7}$ and strain-controlled spin splitting

The interplay of strong electronic correlations, sizable octahedral distortions, and pronounced spin-orbit coupling (SOC) makes perovskite oxides promising candidates for realizing altermagnetic phases. We study altermagnetic phases in Ca$_3$Ru$_2$O$_7$, a non-centrosymmetric layered perovskite whose ground state is a Kramers-degenerate antiferromagnet. We show that an alternative Néel-type spin arrangement hosts a P-2 d-wave altermagnetic state with orbital selectivity similar to Ca$_2$RuO$_4$. Including SOC generates a symmetry-allowed p-wave component and yields a hybrid d/p-wave altermagnetic order. We further demonstrate that biaxial strain tunes both magnetic stability and band splitting: compressive strain beyond 2 % favors the altermagnetic phase over the antiferromagnetic ground state, while tensile strain increases altermagnetic splittings by up to 9 %. To quantify these trends, we define an altermagnetic figure of merit and trace its strain dependence to changes in electronic localization and octahedral geometry in this polar metal.

cond-mat.mtrl-sci↗

Persistent spin textures, altermagnetism and charge-to-spin conversion in metallic chiral crystals TM$_{3}$X$_{6}$

Chiral crystals, due to the lack of inversion and mirror symmetries, exhibit unique spin responses to external fields, enabling physical effects rarely observed in high-symmetry systems. Here, we show that materials from the chiral dichalcogenide family TM$_3$X$_6$ (T = 3d, M = 4d/5d, X = S) exhibit persistent spin texture (PST) - unidirectional spin polarization of states across large regions of the reciprocal space - in their nonmagnetic metallic phase. Using the example of NiTa$_{3}$S$_{6}$ and NiNb$_{3}$S$_{6}$, we show that PSTs cover the full Fermi surface, a rare and desirable feature that enables efficient charge-to-spin conversion and suggests long spin lifetimes and coherent spin transport above magnetic ordering temperatures. At low temperatures, the materials that order antiferromagnetically become chiral altermagnets, where spin textures originating from spin-orbit coupling and altermagnetism combine in a way that sensitively depends on the orientation of the Neel vector. Using symmetry analysis and first-principles calculations, we classify magnetic ground states across the family, identify cases with weak ferromagnetism, and track the evolution of spin textures and charge-to-spin conversion across magnetic phases and different Neel vector orientations, revealing spin transport signatures that allow one to distinguish Neel vector directions. These findings establish TM$_3$X$_6$ as a tunable platform for efficient charge-to-spin conversion and spin transport, combining structural chirality, persistent spin textures, and altermagnetism.

cond-mat.mtrl-sci↗

Inducing ferromagnetism by structural engineering in a strongly spin-orbit coupled oxide

Magnetic materials with strong spin-orbit coupling (SOC) are essential for the advancement of spin-orbitronic devices, as they enable efficient spin-charge conversion, complex magnetic structures, spin-valley physics, topological phases and other exotic phenomena. 5d transition-metal oxides such as SrIrO3 feature large SOC, but usually show paramagnetic behavior due to broad bands and a low density of states at the Fermi level, accompanied by a relatively low Coulomb repulsion. Here, we unveil ferromagnetism in 5d SrIrO3 thin films grown on SrTiO3 (111). Through substrate-induced structural engineering, a zigzag stacking of three-unit-cell thick layers along the [111] direction is achieved, stabilizing a ferromagnetic state at the interfaces. Magnetotransport measurements reveal an anomalous Hall effect below ~30 K and hysteresis in the Hall conductivity below 7 K, indicating ferromagnetic ordering. X-ray magnetic circular dichroism further supports these results. Theoretical analysis suggests that the structural engineering of the IrO6 octahedral network enhances the density of states at the Fermi level and thus stabilizes Stoner ferromagnetism. This work highlights the potential of structurally engineered 5d oxides for spin-orbitronic devices, where efficient control of SOC-induced magnetic phases by electric currents can lead to lower energy consumption and improved performance in next-generation device technologies.

cond-mat.mtrl-sci↗

First-Principles Insights into Excitonic and Electron-Phonon Effects in van der Waals Heterostructures

Motivated by the successful synthesis of isolated ZrS2 and HfS2 transition metal dichalcogenide (TMD) monolayers and inspired by their nearly identical lattice constants, we construct and investigate a vertical ZrS2/HfS2 van der Waals (vdW) heterostructure. Using first-principles calculations based on density functional theory (DFT) and many-body perturbation theory (MBPT), we explore its electronic, optical, and excitonic properties, with particular emphasis on excitonic effects and their temperature dependence. Based on the GW method, the ZrS2/HfS2 vdW heterostructure exhibits an indirect band gap of 2.60 eV with a Type-I band alignment. The optical gap of the heterostructure is found to be 2.64 eV, with an exciton binding energy of 0.71 eV, both reduced compared to those in the isolated monolayers. Moreover, we investigate the temperature-dependent optoelectronic behavior of the heterostructure, considering electron-phonon coupling. A zero-point renormalization of 0.04 eV in the direct band gap is observed. While the direct band gap decreases monotonically with temperature from 0 K to 400 K, the indirect band gap displays a non-monotonic trend. As a result, the absorption spectrum undergoes a meaningful redshift with increasing temperature. At room temperature, the optical gap of the heterostructure is reduced to 2.51 eV and the exciton binding energy to 0.63 eV. Our findings highlight the important role of electron-phonon interaction in the optoelectronic response of ZrS2/HfS2 vdW heterostructure, supporting its use in high-performance optoelectronic devices.

cond-mat.mtrl-sci↗

Conditions for orbital selective altermagnetism in Sr$_2$RuO$_4$: tight binding model, similarities with cuprates and implications on superconductivity

The vibrational modes in Sr$_2$RuO$_4$ easily induce octahedral rotations without tilting. Being on the verge of a magnetic instability, such propensity of octahedral rotation may also produce magnetic fluctuations. In this work, we analyze the long-range magnetic phase diagram incorporating such octahedral rotations and demonstrate the possibility of an altermagnetic phase in Sr$_2$RuO$_4$. Using ab-initio calculations, we first study single layer Sr$_2$RuO$_4$ with octahedral rotations, obtaining an orbital-selective $g$-wave altermagnetic phase. We further provide an effective $t_{2g}$ tight-binding model, demonstrating that the $g$-wave altermagnetism is primarily a product of second and third nearest neighbor interorbital hybridizations between the $γz$ ($γ=x,y$) orbitals, but only a much longer range intraorbital hybridization in the $xy$ orbitals, establishing a strong orbital-selectiveness for the altermagnetism. Notably, by replacing the $xy$ orbital with the $x^2-y^2$ orbital, a similar tight-biding model may be used to investigate the hole-doped cuprate superconductors. We then study bulk Sr$_2$RuO$_4$, where we find the altermagnetic phase as the magnetic ground state for a range of finite octahedral rotations. In the bulk, interlayer hopping breaks some of the symmetries of the $g$-wave altermagnet, resulting in a $d_{xy}$-wave altermagnet, still with orbital selectiveness. We also include relativistic effects through spin-orbit coupling and obtain that an effective staggered Dzyaloshinskii-Moriya interaction generates weak ferromagnetism. Finally, we discuss the implications of the altermagnetic order on the intrinsic superconductivity of Sr$_2$RuO$_4$. Assuming in-plane and intraorbital pairing, the altermagnetism favors spin-singlet $d_{x^2-y^2}$-wave or $g$-wave pairing, or (nematic or chiral) combinations thereof.

cond-mat.supr-con↗

Coexistence of Rashba and Dirac dispersions on the surface of centrosymmetric topological insulator decorated with transition metals

The Dirac cone originates from the bulk topology, yet its primary contribution comes from the surface since spatially, the Dirac state emerges at the boundary between the trivial and topological phases. At the same time, the Rashba states emerge in regions where inversion symmetry is broken. On the surface of the centrosymmetric topological insulators, both Rashba and Dirac bands are present and their hybridization produces the giant Rashba effect, modifying both Rashba's and Dirac's bands. Therefore, pure Rashba and Dirac fermions are inherently incompatible on the surface of centrosymmetric topological insulators if the material is homogeneous. Inspired by recent experiments, we focused on the (111) polar surface of PbSe, which becomes a topological crystalline insulator under compressive strain, and we established the conditions under which a topological system can simultaneously host pure Rashba and Dirac surface states close to the Fermi level. The coexistence of pure Dirac and Rashba dispersions is only possible in a non-homogeneous centrosymmetric topological insulator, where the spatial origins of the two bands are effectively separated. In the experimentally observed case of PbSe, we demonstrate that a metallic overlayer induces a strong electrostatic potential gradient in the subsurface region, which in turn generates the electric field responsible for Rashba splitting in the subsurface layers. Consequently, in PbSe(111), the Rashba states arise from subsurface layers, while the Dirac states live mainly on the surface layers. Finally, we compare the properties of the Rashba in the trivial and topological phases; the calculated Rashba coefficient agrees qualitatively with the experimental results.

cond-mat.mes-hall↗

Insulator-to-Metal Transition via Magnetic Reconstruction at Oxide Interfaces

Ultrathin two-dimensional (2D) electronic systems at the interfaces of layered materials are highly desirable platforms for exploring of novel quantum phenomena and developing advanced device applications. Here, we investigate ultrathin heterostructures composed of SrIrO3 (SIO) and SrRuO3 (SRO) layers to uncover their emergent properties. Strikingly, despite the fact that both individual layers are antiferromagnetic insulators, the interfaced heterostructure exhibits emergent metallicity. Through transport measurements, magnetic characterization, and angle-resolved photoemission spectroscopy (ARPES), we analyze the underlying mechanisms governing this insulator-to-metal transition. Our findings reveal that the transition is driven by interface-induced magnetic reconstruction, which is further corroborated by density functional theory (DFT) calculations. The staggered Dzyaloshinskii-Moriya interaction at the SIO/SRO interface is identified as the key driving force for this spin reorganization, as it stabilizes ferromagnetism in the coupled antiferromagnetic insulating layers. These findings highlight the significant potential of engineering interfacial magnetic interactions as a powerful approach to generate and control emergent electronic properties, paving the way for novel functionalities that are unattainable in individual ultrathin films.

cond-mat.mes-hall↗