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Carmine Autieri

Publications and source records attributed to Carmine Autieri.

At least 55 records · Page 3Linked to original sources

Dirac surface states, multiorbital dimerization and superconductivity in Nb- and Ta-based A15 compounds

Using first-principle calculations, we investigate the electronic, topological and superconducting properties of Nb$_3$X (X = Ge, Sn, Sb) and Ta$_3$Y (Y = As, Sb, Bi) A15 compounds. We demonstrate that these compounds host Dirac surface states which are related to a nontrivial Z$_2$ topological value. The spin-orbit coupling (SOC) splits the eightfold degenerate R point close to the Fermi level enhancing the amplitude of the spin Hall conductance. Indeed, despite the moderate spin-orbit of the Nb-compounds, a large spin Hall effect is also obtained in Nb$_3$Ge and Nb$_3$Sn compounds. We show that the Coulomb interaction opens the gap at the R point thus making more evident the occurrence of Dirac surface states. We then investigate the superconducting properties by determining the strength of the electron-phonon BCS coupling. The evolution of the critical temperature is tracked down to the 2D limit indicating a reduction of the transition temperature which mainly arises from the suppression of the density of states at the Fermi level. Finally, we propose a minimal tight-binding model based on three coupled Su-Schrieffer-Heeger chains with t$_{2g}$ Ta- and Nb-orbitals reproducing the spin-orbit splittings at the R point among the $π$-bond bands in this class of compounds. We separate the kinetic parameters in $π$ and $δ$-bonds, in intradimer and interdimer hoppings and discuss their relevance for the topological electronic structure. We point out that Nb$_3$Ge might represent a Z$_2$ topological metal with the highest superconducting temperature ever recorded.

cond-mat.supr-con↗

Altermagnetizing the FeSe-like two-dimensional materials and approaching to giant tunneling magnetoresistance with Janus Cr4BN(B2) MBene electrode

Altermagnetism is an emerging series of unconventional magnetic materials characterized by time-reversal symmetry breaking and spin-split bands in the momentum space with zero net magnetization. Metallic altermagnets offer unique advantages for exploring applications in spintronics as conductive metals allows for serving as electrode in magnetic tunneling junction (MTJ) and/or manipulation of spincurrent through external field. Through density functional theory calculations, the 2D altermagnet Cr4B3N was predicted to be stable, resulting from a N atom substitution in the FeSe-like CrB bilayer. Both intra- and inter-layered magnetic exchanges between Cr atoms are in antiferromagnetic with the first three neighbours. Leveraging the anisotropic spin-splittings with momentum dependency revealed in band structure, we designed three edge dependent Cr4B3N/square/Cr4B3N in-plane MTJs with the 7 Åvaccume the barrie. We found that the Cr-B vertical edge-assembled electrodes based MTJs exhibited giant tunneling magnetoresistance (TMR) ratios of 91001% , by aligning the conduction channels of the electrodes in parallel and anti-parallel states in the momentum space. Our work deepens and generalizes understanding toward altermagnetic 2D metallic electrode with a newly established metal boride (MBene), and broadens applications of the nanoscale spintronics.

cond-mat.mtrl-sci↗

Ab-initio study of the beta Fe2O3 phase

We present first-principles results on the electronic and magnetic properties of the cubic bulk $β$-phase of iron(III) oxide (Fe$_2$O$_3$). Given that all Fe-Fe magnetic couplings are expected to be antiferromagnetic within this high-symmetry crystal structure, the system may exhibit some signature of magnetic frustration, making it challenging to identify its magnetic ground state. We have analyzed the possible magnetic phases of the $β$-phase among which there are ferrimagnets, altermagnets and Kramers antiferromagnets. While the $α$-phase is an altermagnet and the $γ$-phase is a ferrimagnet, we conclude that the magnetic ground state for the bulk $β$-phase of Fe$_2$O$_3$ is a Kramers antiferromagnet, moreover, we find that close in energy there is a bulk d-wave altermagnetic phase. We report the density of states and the evolution band gap as a function of the electronic correlations, for suitable values of the Coulomb repulsion the system is a charge-transfer insulator with an indirect band gap of 1.5 eV. As the opposite to the $γ$-phase, the magnetic configuration between first-neighbor of the same kind is always antiferromagnetic while the magnetic configuration between Fe$_a$ and Fe$_b$ is ferro or antiferro. In this magnetic arrangement, first-neighbor interactions cancel out in the mean-field estimation of the Néel temperature, leaving second-neighbor magnetic exchanges as the primary contributors, resulting in a Néel temperature lower than that of other phases. Our work paves the way toward the ab initio study of nanoparticles and alloys for the $β$-phase of Fe$_2$O$_3$.

cond-mat.mtrl-sci↗

CdTe and HgTe doped with V, Cr, and Mn -- prospects for the quantum anomalous Hall effect

Using first principle calculations we examine properties of (Cd,V)Te, (Cd,Cr)Te, (Hg,V)Te, and (Hg,Cr)Te relevant to the quantum anomalous Hall effect (QAHE), such as the position of V- and Cr- derived energy levels and the exchange interactions between magnetic ions. We consider CdTe and HgTe, containing 12.5% of cation-substitutional V or Cr ions in comparison to the well-known case of (Cd,Mn)Te and (Hg,Mn)Te, and examine their suitability for the fabrication of ferromagnetic barriers or ferromagnetic topological quantum wells, respectively. To account for the strong correlation of transition metal d electrons we employ hybrid functionals with different mixing parameters aHSE focusing on aHSE = 0.32, which better reproduces the experimental band gaps in HgTe, CdTe, Hg0.875Mn0.125Te, and Cd0.875Mn0.125Te. We find that Cr, like Mn, acts as an isoelectronic dopant but V can be an in-gap donor in CdTe and a resonant donor in HgTe, similar to the case of Fe in HgSe. From the magnetic point of view, Cr-doping results in a ferromagnetic phase within the general gradient approximation (GGA) but interactions become antiferromagnetic within hybrid functionals. However, (Hg,V)Te is a ferromagnet within both exchange-correlation functionals in a stark contrast to (Hg,Mn)Te for which robust antiferromagnetic coupling is found theoretically and experimentally. Furthermore, we establish that the Jahn-Teller effect is relevant only in the case of Cr-doping. Considering lower defect concentrations in HgTe-based quantum wells compared to (Bi,Sb)3Te2 layers, our results imply that HgTe quantum wells or (Cd,Hg)Te barriers containing either V or Cr show advantages over (Bi,Sb,Cr,V)3Te2-based QAHE systems but whether (i) ferromagnetic coupling will dominate in the Cr case and (ii) V will not introduce too many electrons to the quantum well is to be checked experimentally

cond-mat.mtrl-sci↗

Spin-Hall conductivity and optical characteristics of noncentrosymmetric quantum spin Hall insulators: the case of PbBiI

Quantum spin Hall insulators have attracted significant attention in recent years. Understanding the optical properties and spin Hall effect in these materials is crucial for technological advancements. In this study, we present theoretical analyses to explore the optical properties, Berry curvature and spin Hall conductivity of pristine and perturbed PbBiI using the linear combination of atomic orbitals and the Kubo formula. The system is not centrosymmetric and it is hosting at the same time Rashba spin-splitting and quantized spin Hall conductivity. Our calculations reveal that the electronic structure can be modified using staggered exchange fields and electric fields, leading to changes in the optical properties. Additionally, the spin Berry curvature and spin Hall conductivity are investigated as a function of the energy and temperature. The results indicate that due to the small dynamical spin Hall conductivity, generating an ac spin current in PbBiI requires the use of external magnetic fields or magnetic materials.

cond-mat.mes-hall↗

Staggered Dzyaloshinskii-Moriya inducing weak ferromagnetism in centrosymmetric altermagnets and weak ferrimagnetism in noncentrosymmetric altermagnets

The Dzyaloshinskii-Moriya interaction (DMI) has explained successfully the weak ferromagnetism in {\it some} centrosymmetric antiferromagnets. However, in the last years, it was generally claimed that the DMI is not effective in such systems. We reconciled these views by separating the conventional antiferromagnets from altermagnets. Altermagnets are collinear magnets having zero magnetization preserved by crystal symmetries in the non-relativistic limit. The spin-up and spin-down sublattices can be connected either by a proper rotation or by a combination of a rotation and a mirror or an inversion symmetry. Consequently, the system shows even-parity wave spin order in the k-space lifting the Kramer's degeneracy in the non-relativistic band structure leading to unconventional magnetism. The DMI can create weak ferromagnetism or weak ferrimagnetism in centrosymmetric and in noncentrosymmetric altermagnets while it is not effective in conventional antiferromagnets. Once the spin-orbit coupling is included in an altermagnetic system (where the time-reversal symmetry is broken), the components of spin moments of the two sublattices along the Néel vector are antiparallel but the other two spin components orthogonal to the Néel vector can be null, parallel or antiparallel. In cases where we have different bands showing parallel and antiparallel spin components at the same time, the magnetic order results in weak ferrimagnetism. If we restrain to high-symmetry directions for the Néel vector, we find weak ferrimagnetism only in the noncentrosymmetric compound MnSe among the examined cases.

cond-mat.mtrl-sci↗

Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology

We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, we show that the interplay between ionic and covalent bonds favors the formation of pentagonal NWs. Additionally, we find that this pentagonal structure is more likely to occur in tellurides than in selenides. The disclination and twin boundary cause the electronic states originating from the NW core region to generate a conducting band connecting the valence and conduction bands, creating a symmetry-enforced metallic phase. The metallic core band has opposite slopes in the cases of Sn and Te twin boundary, while the bands from the shell are insulating. We finally study the electronic and topological properties of pentagonal NWs unveiling their potential as a new platform for higher-order topology and fractional charge. These pentagonal NWs represent a unique case of intrinsic core-shell one-dimensional nanostructures with distinct structural, electronic and topological properties between the core and the shell region.

cond-mat.mtrl-sci↗

Impact of correlations on topology in Kane-Mele model decorated with impurities

We propose an effective model for the study of the interplay between correlation and topology by decorating the Kane-Mele model with a set of localized interacting orbitals hybridized to just one sublattice, breaking the inversion symmetry. We show that in the time-reversal symmetric case, the interplay between interactions and hybridization extends the stability of the topological phase and depending on the driving mechanism very different behaviors are observed after the topological phase transition (TPT). We discuss the fate of the TPT in presence of weak ferromagnetic order, by introducing a weak local magnetic field at the localized orbitals, which splits the two band inversion points. One of the platforms to apply this model to are ferrovalley compounds, which are characterized by two independent band inversion points. Understanding this family of materials is crucial for the development of the valleytronics. An alternative to spintronics, which uses valley polarization as opposed to spin degrees of freedom as the building block, promises great opportunities for the development of information storage.

cond-mat.str-el↗

Huge Dzyaloshinskii-Moriya interactions in Re_Co_Pt thin films

We investigate the magnetization and the Dzyaloshinskii-Moriya interactions (DMI) in Pt/Co/Re thin films in the case of perfect interfaces and upon the introduction of intermixing on both Co interfaces. Calculations were implemented on a series of systems with a varied number of cobalt atomic layers (ALs). Remarkably, the Re is able to introduce a DMI at the interface with cobalt and also, increase the DMI at the Pt/Co interface. We demonstrate that the chiral magnetic multilayer Pt/Co/Re with chiral spin structure can achieve a huge DMI value which is almost double of that attained in the prototype system W/Co/Pt. We study also the DMI as a function of the Re thickness finding the optimal thickness to maximize the DMI. When we include a disorder that cancels a contribution from all first-neighbor Co atoms in the intermixed region, we found out that intermixing at the two interfaces affects the strength of the DMI solely when introduced at the Pt/Co interface where the DMI loses almost half of its value. On the contrary, the mixing at the Co/Re interface has very little or no effect as compared to the case with perfect interfaces. The value of the DMI would be somewhere between the perfect interface case and the totally intermixed case. The realization of such a device should focus on the reduction of the Pt/Co intermixing to realize this huge DMI interaction.

cond-mat.mtrl-sci↗

Wurtzite vs rock-salt MnSe epitaxy: electronic and altermagnetic properties

Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from the specific symmetry operations that connect the spin sublattices. In this report, we show with ab initio calculations that the semiconductive MnSe exhibits altermagnetic spin-splitting in the wurtzite phase as well as a critical temperature well above room temperature. It is the first material from such space group identified to possess altermagnetic properties. Furthermore, we demonstrate experimentally through structural characterization techniques that it is possible to obtain thin films of both the intriguing wurtzite phase of MnSe and the more common rock-salt MnSe using molecular beam epitaxy on GaAs substrates. The choice of buffer layers plays a crucial role in determining the resulting phase and consequently extends the array of materials available for the physics of altermagnetism.

cond-mat.mtrl-sci↗

Interplay between altermagnetism and nonsymmorphic symmetries generating large anomalous Hall conductivity by semi-Dirac points induced anticrossings

We investigate the interplay between altermagnetic spin-splitting and nonsymmorphic symmetries using the space group no. 62 as a testbed. Studying different magnetic orders by means of first-principles calculations, we find that the altermagnetism (AM) is present in the C-type magnetic configuration while it is absent for the G-type and A-type configurations due to different magnetic space group types. The nonsymmorphic symmetries constrain the system to a four-fold degeneracy at the border of the Brillouin zone with semi-Dirac dispersion. In the case of large hybridization as for transition metal pnictides, the interplay between AM and nonsymmorphic symmetries generates an intricate network of several crossings and anticrossings that we describe in terms of semi-Dirac points and glide symmetries. When we add the spin-orbit coupling (SOC), we find a Neel-vector dependent spin-orbit splitting at the time-reversal invariant momenta points since the magnetic space groups depend on the Neel vector. The magnetic space group type-I produces antiferromagnetic hourglass electrons that disappear in the type-III. When the Neel vector is along x, we observe a glide-protected crossing that could generate a nodal-line in the altermagnetic phase. The SOC splits the remaining band crossings and band anticrossings producing a large anomalous Hall effect in all directions excluding the Neel-vector direction

cond-mat.mtrl-sci↗

Spin-orbit insulating phase in SnTe cubic nanowires: consequences on the topological surface states

We investigate the electronic, structural and topological properties of the SnTe and PbTe cubic nanowires using ab-initio calculations. Using standard and linear-scale density functional theory, we go from the ultrathin limit up to the nanowires thicknesses observed experimentally. Finite-size effects in the ultra-thin limit produce an electric quadrupole and associated structural distortions, these distortions increase the band gap but they get reduced with the size of the nanowires and become less and less relevant. Ultrathin SnTe cubic nanowires are trivial band gap insulators, we demonstrate that by increasing the thickness there is an electronic transition to a spin-orbit insulating phase due to trivial surface states in the regime of thin nanowires. These trivial surface states with a spin-orbit gap of a few meV appear at the same k-point of the topological surface states. Going to the limit of thick nanowires, we should observe the transition to the topological crystalline insulating phase with the presence of two massive surface Dirac fermions hybridized with the persisting trivial surface states. Therefore, we have the co-presence of massive Dirac surface states and trivial surface states close to the Fermi level in the same region of the k-space. According to our estimation, the cubic SnTe nanowires are trivial insulators below the critical thickness tc1=10 nm, and they become spin-orbit insulators between tc1=10 nm and tc2=17 nm, while they transit to the topological phase above the critical thickness of tc2=17 nm. These critical thickness values are in the range of the typical experimental thicknesses, making the thickness a relevant parameter for the synthesis of topological cubic nanowires. Pb(1-x)Sn(x)Te nanowires would have both these critical thicknesses tc1 and tc2 at larger values depending on the doping concentration.

cond-mat.mes-hall↗

Ab-initio overestimation of the topological region in Eu-based compounds

An underestimation of the fundamental band gap values by the density functional theory within the local density approximation and associated approaches is a well-known challenge of ab-initio electronic structure computations. Motivated by recent optical experiments [D. Santos-Cottin et al., arXiv:2301.08014], we have revisited first-principle results obtained earlier for EuCd2As2 and extended the computational studies to the whole class of systems EuCd2X2 (X = P, As, Sb, Bi), to EuIn2X2 (X = P, As, Sb), and to nonmagnetic AEIn2As2 (AE= Ca, Sr, Ba) employing a hybrid functional method. We find that our approach provides the magnitude of the energy gap for EuCd2As2 in agreement with the experimental value. Actually, our results indicate that EuSn2As2, BaIn2As2, EuCd2Bi2 and EuCd2SbBi are robust topological insulators, while all other compounds are topologically trivial semiconductors. The trivial band gaps of EuCd2P2, EuCd2As2 and EuCd2Sb2 are in the range of 1.38-1.48 eV, 0.72-0.79 eV and 0.46-0.49 eV, respectively. The topologically trivial Eu-based systems are antiferromagnetic semiconductors with a strong red shift of the energy gap in a magnetic field caused by the exchange coupling of the band states to spins localized on the 4f-shell of Eu ions. Additionally, the EuIn2X2 (X = P, As) compounds show altermagnetic exchange-induced band spin-splitting, particularly noticeable in the case of states derived from 5d-Eu orbitals.

cond-mat.str-el↗

Altermagnetic surface states: towards the observation and utilization of altermagnetism in thin films, interfaces and topological materials

The altermagnetism influences the electronic states allowing the presence of non-relativistic spinsplittings. Since altermagnetic spin-splitting is present along specific k-paths of the 3D Brillouin zone, we expect that the altermagnetic surface states will be present on specific surface orientations. We unveil the properties of the altermagnetic surface states considering three representative space groups: tetragonal, orthorhombic and hexagonal. We calculate the 2D projected Brillouin zone from the 3D Brillouin zone. We study the surfaces with their respective 2D Brillouin zones establishing where the spin-splittings with opposite sign merge annihilating the altermagnetic properties and on which surfaces the altermagnetism is preserved. Looking at the three principal surface orientations, we find that for several cases two surfaces are blind to the altermagnetism, while the altermagnetism survives for one surface orientation. Which surface preserves the altermagnetism depends also on the magnetic order. We show that an electric field orthogonal to the blind surface can activate the altermagnetism. Our results predict which surfaces to cleave in order to preserve altermagnetism in surfaces or interfaces and this paves the way to observe non-relativistic altermagnetic spin-splitting in thin films via spin-resolved ARPES and to interface the altermagnetism with other collective modes. We open future perspectives for the study of altermagnetic effects on the trivial and topological surface states.

cond-mat.mtrl-sci↗

Orbital-selective altermagnetism and correlation-enhanced spin-splitting in transition metal oxides

We investigate the altermagnetic properties of strongly-correlated transition metal oxides considering the family of the quasi two-dimensional A2BO4 and three-dimensional ABO3. As a test study, we analyze the Mott insulators Ca2RuO4 and YVO3. In both cases, the orbital physics is extremely relevant in the t2g subsector with the presence of an orbital-selective Mott physics in the first case and of a robust orbital-order in the second case. Using first-principles calculations, we show the presence of an orbital-selective altermagnetism in the case of Ca2RuO4. In the case of YVO3, we study the altermagnetism as a function of the magnetic ordering and of the Coulomb repulsion U. We find that the altermagnetism is present in all magnetic orders with the symmetries of the Brillouin zone depending on the magnetic order. Finally, the Coulomb repulsion enhances the non-relativistic spin-splitting making the strongly-correlated systems an exciting playground for the study of the altermagnetism.

cond-mat.str-el↗

Electronic band structure changes across the antiferromagnetic phase transition of exfoliated MnPS$_3$ probed by $μ$-ARPES

Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, most likely due to their photochemical sensitivity. Here, we provide micron-scale angle-resolved photoelectron spectroscopy of the exfoliated intralayer antiferromagnet MnPS$_3$ above and below the Néel temperature down to one monolayer. The favorable comparison with density functional theory calculations enables to identify the orbital character of the observed bands. Consistently, we find pronounced changes across the Néel temperature for bands that consist of Mn 3d and 3p levels of adjacent S atoms. The deduced orbital mixture indicates that the superexchange is relevant for the magnetic interaction. There are only minor changes between monolayer and thicker films demonstrating the predominant 2D character of MnPS$_3$. The novel access is transferable to other MPX$_3$ materials (M: transition metal, P: phosphorus, X: chalcogenide) providing a multitude of antiferromagnetic arrangements.

cond-mat.mtrl-sci↗

Pattern Formation by Electric-field Quench in Mott Crystal

The control of Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca$_2$RuO$_4$ Mott insulator. We demonstrate how an applied electric field spatially reconstructs the insulating phase that, uniquely after switching off the electric field, exhibits nanoscale stripe domains. The stripe pattern has regions with inequivalent octahedral distortions that we directly observe through high-resolution scanning transmission electron microscopy. The nanotexture depends on the orientation of the electric field, it is non-volatile and rewritable. We theoretically simulate the charge and orbital reconstruction induced by a quench dynamics of the applied electric field providing clear-cut mechanisms for the stripe phase formation. Our results open the path for the design of non-volatile electronics based on voltage-controlled nanometric phases.

cond-mat.str-el↗

Fast electrically switchable large gap quantum spin Hall states in MGe$_2$Z$_4$

Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry. Using these spin-currents for device applications require materials having large band gap and fast switchable QSH states. By means of in-depth first-principles calculations, we demonstrate the large band gap and fast switchable QSH state in a newly introduced two-dimensional (2D) material family with 1T$^\prime$-MGe$_2$Z$_4$ (M = Mo or W and Z = P or As). The thermodynamically stable 1T$^\prime$-MoGe$_2$Z$_4$ monolayers have a large energy gap around $\sim$237 meV. These materials undergo a phase transition from a QSH insulator to a trivial insulator with a Rashba-like spin splitting under the influence of an out-of-plane electric field, demonstrating the tunability of the band gap and its band topology. Fast topological phase switching in a large gap 1T$^\prime$-MoGe$_2$Z$_4$ QSH insulators has potential applications in low-power devices, quantum computation, and quantum communication.

cond-mat.mes-hall↗