arXiv subjects

Carsten Ronning

Publications and source records attributed to Carsten Ronning.

31 records · Page 2Linked to original sources

arXiv2022

Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams

We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, vanadium dioxide (VO2), locally modifying its insulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of doping or defect density are required.

cond-mat.mtrl-sci↗

arXiv2022

Tuning nanowire lasers via hybridization with two-dimensional materials

Mixed dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional materials could offer new ways to control and modulate lasing at the nanoscale. In this work, we deterministically fabricate hybrid mixed-dimensional heterostructures composed of ZnO nanowires and MoS2 monolayers with micrometer control over their relative position. First, we show that our deterministic fabrication method does not degrade the optical properties of the ZnO nanowires. Second, we demonstrate that the lasing wavelength of ZnO nanowires can be tuned by several nanometers by hybridization with CVD-grown MoS2 monolayers. We assign this spectral shift of the lasing modes to an efficient carrier transfer at the heterointerface and the subsequent increase of the optical band gap in ZnO (Moss-Burstein effect).

physics.optics↗

arXiv2022

A photonic integrated circuit based erbium-doped amplifier

Erbium-doped fiber amplifiers have revolutionized long-haul optical communications and laser technology. Erbium ions could equally provide a basis for efficient optical amplification in photonic integrated circuits. However, this approach has thus far remained impractical due to insufficient output power. Here, we demonstrate a photonic integrated circuit based erbium amplifier reaching 145 mW output power and more than 30 dB small-signal gain -- on par with commercial fiber amplifiers and beyond state-of-the-art III-V heterogeneously integrated semiconductor amplifiers. We achieve this by applying ion implantation to recently emerged ultralow-loss Si3N4 photonic integrated circuits with meter-scale-length waveguides. We utilize the device to increase by 100-fold the output power of soliton microcombs, required for low-noise photonic microwave generation or as a source for wavelength-division multiplexed optical communications. Endowing Si3N4 photonic integrated circuits with gain enables the miniaturization of a wide range of fiber-based devices such as high-pulse-energy femtosecond mode-locked lasers.

physics.optics↗

arXiv2022

Acceleration and adiabatic expansion of multi-state fluorescence from a nanofocus

Since Purcell's seminal report 75 years ago, electromagnetic resonators have been used to control light-matter interactions to make brighter radiation sources and unleash unprecedented control over quantum states of light and matter. Indeed, optical resonators such as microcavities and plasmonic nanostructures offer excellent control but only over a limited spectral range. Strategies to tune both emission and the resonator are often required, which preclude the possibility of enhancing multiple transitions simultaneously. In this letter, we report a more than 590-fold radiative emission enhancement across the telecommunications emission band of Erbium-ions in silica using a single non-resonant plasmonic waveguide. Our plasmonic waveguide uses a novel reverse nanofocusing approach to efficiently collect emission, making these devices brighter than all non-plasmonic control samples considered. Remarkably, the high broadband Purcell factor allows us to resolve the Stark-split electric dipole transitions, which are typically only observed under cryogenic conditions. Simultaneous Purcell enhancement of multiple quantum states is of interest for photonic quantum networks as well as on-chip data communications.

physics.optics↗

arXiv2021

Tuning exciton recombination rates in doped transition metaldichalcogenides

Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding the interplay between their radiative and non-radiative recombination pathways is thus of crucial importance not only for fundamental studies but also for the design of future nanoscale on-chip devices. Here, we investigate the interplay between doping and exciton-exciton annihilation (EEA) and their impact on the photoluminescence quantum yield in different TMD samples and related heterostructures. We demonstrate that the EEA threshold increases in highly doped samples, where the radiative and non-radiative recombination of trions dominates.

cond-mat.mes-hall↗

arXiv2021

Fast recovery of ion-irradiation-induced defects in Ge2Sb2Te5 thin films at room temperature

Phase-change materials serve a broad field of applications ranging from non-volatile electronic memory to optical data storage by providing reversible, repeatable, and rapid switching between amorphous and crystalline states accompanied by large changes in the electrical and optical properties. Here, we demonstrate how ion irradiation can be used to tailor disorder in initially crystalline Ge2Sb2Te5 (GST) thin films via the intentional creation of lattice defects. We found that continuous Ar ion irradiation at room temperature of GST films causes complete amorphization of GST when exceeding 0.6 (for rock-salt GST) and 3 (for hexagonal GST) displacements per atom (n_dpa). While the transition from rock-salt to amorphous GST is caused by progressive amorphization via the accumulation of lattice defects, several transitions occur in hexagonal GST upon ion irradiation. In hexagonal GST, the creation of point defects and small defect clusters leads to disordering of intrinsic vacancy layers (van der Waals gaps) that drives the electronic metal-insulator transition. Increasing disorder then induces a structural transition from hexagonal to rock-salt and then leads to amorphization. Furthermore, we observed different annealing behavior of defects for rock-salt and hexagonal GST. The higher amorphization threshold in hexagonal GST compared to rock-salt GST is caused by an increased defect-annealing rate, i.e., a higher resistance against ion-beam-induced disorder. Moreover, we observed that the recovery of defects in GST is on the time scale of seconds or less at room temperature.

cond-mat.mtrl-sci↗

arXiv2021

Coupling of a Single Tin-vacancy Center to a Photonic Crystal Cavity in Diamond

We demonstrate optical coupling between a single tin-vacancy (SnV) center in diamond and a free-standing photonic crystal nanobeam cavity. The cavities are fabricated using quasi-isotropic etching and feature experimentally measured quality factors as high as ~11,000. We investigate the dependence of a single SnV center's emission by controlling the cavity wavelength using a laser-induced gas desorption technique. Under resonance conditions, we observe an intensity enhancement of the SnV emission by a factor of 12 and a 16-fold reduction of the SnV lifetime. Based on the large enhancement of the SnV emission rate inside the cavity, we estimate the Purcell factor for the SnV zero-phonon line to be 37 and the coupling efficiency of the SnV center to the cavity, the beta factor, to be 95%. Our work paves the way for the realization of quantum photonic devices and systems based on efficient photonic interfaces using the SnV color center in diamond.

physics.optics↗

arXiv2020

Microwave AC voltage induced phase change in Sb$_2$Te$_3$ nanowires

Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional modularity and promising scalability. In this work, we present the demonstration of microwave AC voltage induced phase change phenomenon at 3 GHz in single Sb$_2$Te$_3$ nanowires. The resistance change by a total of 6 - 7 orders of magnitude is evidenced by a transition from the crystalline metallic to the amorphous semiconducting phase, which is cross-examined by temperature dependent transport measurement and high-resolution electron microscopy analysis. This discovery could potentially tailor multi-state information bit encoding and discrimination along a single nanowire, rendering technology advancement for neuro-inspired computing devices.

physics.app-ph↗

arXiv2019

Optical properties of thin-film vanadium dioxide from the visible to the far infrared

The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) can enable a variety of optics applications, including switching and modulation, optical limiting, and tuning of optical resonators. Despite the widespread interest in optics, the optical properties of VO2 across its IMT are scattered throughout the literature, and are not available in some wavelength regions. We characterized the complex refractive index of VO2 thin films across the IMT for free-space wavelengths from 300 nm to 30 μm, using broadband spectroscopic ellipsometry, reflection spectroscopy, and the application of effective-medium theory. We studied VO2 thin films of different thickness, on two different substrates (silicon and sapphire), and grown using different synthesis methods (sputtering and sol gel). While there are differences in the optical properties of VO2 synthesized under different conditions, they are relatively minor compared to the change resulting from the IMT, most notably in the ~2 - 11 μm range where the insulating phase of VO2 has relatively low optical loss. We found that the macroscopic optical properties of VO2 are much more robust to sample-to-sample variation compared to the electrical properties, making the refractive-index datasets from this article broadly useful for modeling and design of VO2-based optical and optoelectronic components.

physics.optics↗

arXiv2016

Carrier density driven lasing dynamics in ZnO nanowires

We report on the temporal lasing dynamics of high quality ZnO nanowires using time-resolved micro-photoluminescence technique. The temperature dependence of the lasing characteristics and of the corresponding decay constants demonstrate the formation of an electron-hole plasma to be the underlying gain mechanism in the considered temperature range from 10 K to 300 K. We found that the temperature dependent emission onset-time ($t_{\text{on}}$) strongly depends on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, the observed red shift of the dominating lasing modes in time is qualitatively discussed in terms of the carrier density induced change of the refractive index dispersion after the excitation laser pulse. This theory is supported by extending an existing model for the calculation of the carrier density dependent complex refractive index for different temperatures. This model coincides with the experimental observations and reliably describes the evolution of the refractive index after the excitation laser pulse.

physics.optics↗

arXiv2015

Enhanced sputter yields on ion irradiated Au nano particles: energy and size dependence

Hexagonally arranged Au nano particles (NPs) exhibiting a broad size distribution ranging from 30 nm to 80 nm with a Gaussian shape were deposited on Si substrates and irradiated with Ar+ and Ga+ ions with various energies from 20 to 350 keV and 1 to 30 keV, respectively. The size and energy dependence of the sputter yield were measured using high resolution scanning electron microscopy image analysis. These results were compared to simulation results obtained by iradina, a Monte Carlo (MC) code, which takes the specifics of the nano geometry into account. The experimental obtained sputter yields are significantly higher compared to the calculated simulation results for both bulk and the nano geometry. The difference can be clearly attributed to thermally driven effects, which significantly influence the measured sputter yields.

cond-mat.mtrl-sci↗

arXiv2015

Polarization features of optically pumped CdS nanowire lasers

High quality CdS nanowires suspended in air were optically pumped both below and above the lasing threshold. The polarization of the pump laser was varied while emission out of the end facet of the nanowire was monitored in a 'head-on' measurement geometry. Highest pump-efficiency and most efficient absorption of the pump radiation are demonstrated for an incident electric field being polarized parallel to the nanowire axis. This polarization dependence, which was observed both above the lasing threshold and in the regime of amplified spontaneous emission, is caused by an enhanced absorption for parallel polarized optical pumping. Measured Stokes parameters of the nanowire emission reveal that due to the onset of lasing the degree of polarization rapidly increases from approximately 15% to 85%. Both, Stokes parameters and degree of polarization of the nanowire lasing emission are independent of the excitation polarization. The transversal lasing mode is therefore not notably affected by the polarization of the pumping beam, although the supply with optical gain is significantly enhanced for an excitation polarization parallel to the nanowire axis.

cond-mat.mes-hall↗

arXiv2015

Persistent ion beam induced conductivity in zinc oxide nanowires

We report persistently increased conduction in ZnO nanowires irradiated by ion beam with various ion energies and species. This effect is shown to be related to the already known persistent photo conduction in ZnO and dubbed persistent ion beam induced conduction. Both effects show similar excitation efficiency, decay rates, and chemical sensitivity. Persistent ion beam induced conduction will potentially allow countable (i.e., single dopant) implantation in ZnO nanostructures and other materials showing persistent photo conduction.

cond-mat.mtrl-sci↗