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Caspar Hopfmann

Publications and source records attributed to Caspar Hopfmann.

14 recordsLinked to original sources

Deterministic positioning of circular Bragg gratings using atomic force lithography for high-performance quantum dot light sources

Semiconductor quantum dots (QDs) grown by molecular beam epitaxy are excellent quantum emitters, but their random spatial distribution hinders deterministic coupling to optical microcavities. We demonstrate a room-temperature atomic force microscopy (AFM)-assisted nano-oxidation lithography technique enabling QD positioning with a radial displacement of $51(28)$ nm. Free-standing asymmetric circular Bragg gratings incorporating AFM-positioned GaAs QDs exhibit a $245$-fold photoluminescence enhancement and fine-structure splitting (FSS) comparable to bulk QDs. Polarization-resolved spectroscopy and finite-difference time-domain simulations show robust emission for displacements up to $50$ nm (Stokes parameter $\lvert S \rvert < 0.05$ ). The devices display stable FSS and polarization imbalance below $5 \, \%$ , confirming precise, reproducible alignment and potential for high fidelity devices. This scalable approach enables deterministic integration of high-performance QDs with photonic cavities, advancing practical quantum light sources for quantum information technologies.

cond-mat.mtrl-sci

Free-standing circular Bragg gratings enabling efficient GaAs quantum dot entangled photon pair sources

Deterministic and bright quantum light sources based on scalable semiconductor technologies are a crucial building block for future quantum communication networks. While circular Bragg gratings (CBGs) are highly effective for extracting light from solid-state quantum emitters, conventional architectures rely on complex multi-layer processing or flip-chip bonding, which introduce detrimental strain and limit scalability. Here, we present a fabrication-minimal approach to realize monolithic, free-standing CBG cavities with deterministically positioned single GaAs quantum dots (QDs). By utilizing aspect-ratio-dependent etching (ARDE) in a single-step top-down process, we achieve the necessary vertical structural asymmetry for directional emission without requiring bottom reflectors. Finite-difference time-domain (FDTD) simulations validate this geometry, predicting free-space extraction efficiencies up to $68 \, \%$ and coupling efficiencies of $40 \, \%$ into a lensed single-mode fiber ($\text{NA} = 0.6$). Experimentally, the deterministically coupled QD-CBG devices yield a photoluminescence intensity enhancement of up to $\times 700$ compared to unprocessed planar QDs, reaching integrated count rates of $45 \, MHz$. Furthermore, the suspended membrane architecture effectively relaxes residual strain, significantly reducing the average exciton fine-structure splitting from $7.3 \, \mu eV$ in planar QDs to $1.3 \, \mu eV$ in the CBGs. Interferometric measurements confirm that the fabrication process preserves the optical quality of the emitters, with average coherence times of $70 \, ps$. By bridging optimized FDTD design with precise nanofabrication and robust optical performance, these results establish free-standing GaAs CBGs as a highly scalable platform for bright and coherent entangled photon pair sources.

physics.optics

Compact system development of efficient quantum-entangled photon sources towards deployable and industrial devices

Entangled photon pair sources are a key enabling technology for quantum communication and networking, yet their deployment beyond laboratory environments is hindered by system-level complexity, limited operational stability, and insufficient industry compatibility. Here, we demonstrate a rack-based, mobile quantum light source architecture based on a semiconductor quantum dot emitter that directly addresses these challenges through modular system integration and automated operation. The source generates polarization-entangled photon pairs with an entanglement negativity 2n of up to $0.98(1)$, confirming near-maximal entanglement quality. In continuous, hands-off operation over a six-hour time window, the system achieves an average single-photon emission rate of $697(8)$ kHz and a maximum rate of $740(7)$ kHz, while maintaining 2n-value of more than $95$ $\%$. These results are enabled by the integration of optical excitation, collection, cryogenic operation, and control electronics within a standardized rack footprint, together with automated monitoring. By demonstrating simultaneously high entanglement quality, sustained brightness, and long-term operational stability in an industry-aligned system architecture, this work advances semiconductor quantum dot sources toward deployable entangled photon sources for applied quantum photonics.

quant-ph

Temperature-dependent refractive index of AlGaAs for quantum-photonic devices near the bandgap

We present an experimental method to determine the refractive index of $Al_{x}Ga_{1-x}As$ (x = 0.0 - 0.5) from 300 K to 4 K across the 500 - 1100 nm wavelength range. The values are extracted from spectroscopically observed microcavity resonances in thin $Al_{x}Ga_{1-x}As$ membranes embedded between fully and partially reflective gold mirrors. Refined Varshni and Paessler models are used to describe temperature-dependent bandgap shifts and material composition. By tracking resonance shifts and benchmarking against finite-difference time-domain simulations, we derive the dispersive optical response with high precision. This yields a quantitatively improved analytical expression for the refractive index of $Al_{x}Ga_{1-x}As$ matching the experimental results with a coefficient of determination as high as $R^2=0.993$, enabling accurate modeling near the band edge at cryogenic temperatures. The method is straightforward and broadly applicable to other semiconductor systems, offering a valuable tool for the design of micro photonic devices such as quantum light sources.

physics.optics

Bright quantum dot light sources using monolithic microlenses on gold back-reflectors

We present the fabrication process of bright $GaAs$ quantum dot (QD) photon sources by non-deterministic embedding into broadband monolithic $Al_{0.15}Ga_{0.85}As$ microlens arrays on gold-coated substrates. Arrays of cylindrical photoresist templates, with diameters ranging from $2$ $\mu m$ to $5$ $\mu m$, are thermally reflowed and subsequently transferred into the $Al_{0.15}Ga_{0.85}As$ thin-film semiconductor heterostructure with embedded quantum dots through an optimized anisotropic and three-dimensional shape-preserving reactive ion etching process. This methodology facilitated the fabrication of large-scale ($2$ $mm$ $\times$ $4$ $mm$) and densely packed arrays of uniformly shaped microlenses ($\sim$ $40 \times 10^3$ $mm^{-1}$), with the brightest emissions from QDs embedded in microlenses exhibiting lateral diameters and heights of $2.7$ $\mu m$ and $1.35$ $\mu m$, respectively. Finite-difference time-domain simulations of both idealized and fabricated lens shapes provide a comprehensive three-dimensional analysis of the device performance and optimization potentials such as anti-reflection coatings. It is found that free-space extraction (fiber-coupled) efficiencies of up to $62$ $\%$ ($37$ $\%$) are achievable for hemispherical QD-microlenses on gold-coated substrates. A statistical model for the fabrication yield of QD-microlenses is developed and experimentally corroborated by photoluminescence spectroscopy of fabricated microlens arrays. This analysis exhibited a free-space intensity enhancement by factors of up to $\times 200$ in approximately $1$ out of $200$ microlenses, showing good agreement to the theoretical expectations. This scalable fabrication strategy underscores the potential of these compact, high-efficiency sources offering new prospects for applications of these devices in future large-scale quantum networks.

cond-mat.mes-hall

Quantum Teleportation with Telecom Photons from Remote Quantum Emitters

The quest for a global quantum internet is based on the realization of a scalable network which requires quantum hardware with exceptional performance. Among them are quantum light sources providing deterministic, high brightness, high-fidelity entangled photons and quantum memories with coherence times in the millisecond range and above. To operate the network on a global scale, the quantum light source should emit at telecommunication wavelengths with minimum propagation losses. A cornerstone for the operation of such a quantum network is the demonstration of quantum teleportation. Here we realize full-photonic quantum teleportation employing one of the most promising platforms, i.e. semiconductor quantum dots, which can fulfill all the aforementioned requirements. Two remote quantum dots are used, one as a source of entangled photon pairs and the other as a single-photon source. The frequency mismatch between the triggered sources is erased using two polarization-preserving quantum frequency converters, enabling a Bell state measurement at telecommunication wavelengths. A post-selected teleportation fidelity of up to 0.721(33) is achieved, significantly above the classical limit, demonstrating successful quantum teleportation between light generated by distinct sources. These results mark a major advance for the semiconductor platform as a source of quantum light fulfilling a key requirement for a scalable quantum network. This becomes particularly relevant after the seminal breakthrough of addressing a nuclear spin in semiconductor quantum dots demonstrating long coherence times, thus fulfilling another crucial step towards a scalable quantum network.

quant-ph

High fidelity distribution of triggered polarization-entangled telecom photons via a 36km intra-city fiber network

Fiber-based distribution of triggered, entangled, single-photon pairs is a key requirement for the future development of terrestrial quantum networks. In this context, semiconductor quantum dots (QDs) are promising candidates for deterministic sources of on-demand polarization-entangled photon pairs. So far, the best QD polarization-entangled-pair sources emit in the near-infrared wavelength regime, where the transmission distance in deployed fibers is limited. Here, to be compatible with existing fiber network infrastructures, bi-directional polarization-conserving quantum frequency conversion (QFC) is employed to convert the QD emission from \unit[780]{nm} to telecom wavelengths. We show the preservation of polarization entanglement after QFC (fidelity to Bell state $F_{ϕ^+, conv}=0.972\pm0.003$) of the biexciton transition. As a step towards real-world applicability, high entanglement fidelities ($F_{ϕ^+, loop}=0.945\pm0.005$) after the propagation of one photon of the entangled pair along a \unit[35.8]{km} field installed standard single mode fiber link are reported. Furthermore, we successfully demonstrate a second polarization-conversing QFC step back to \unit[780]{nm} preserving entanglement ($F_{ϕ^+, back}=0.903\pm0.005$). This further prepares the way for interfacing quantum light to various quantum memories.

quant-ph

Photoneutralization of charges in GaAs quantum dot based entangled photon emitters

Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photonic quantum technologies. They are known for the ability to generate discrete photonic states on-demand with low multiphoton emission, near-unity entanglement fidelity, and high single photon indistinguishability. However, quantum dots typically suffer from luminescence blinking, lowering the efficiency of the source and hampering their scalable application in quantum networks. In this paper, we investigate and adjust the intermittence of the neutral exciton emission in a GaAs/AlGaAs quantum dot under two-photon resonant excitation of the neutral biexciton. We investigate the spectral and quantum optical response of the quantum dot emission to an additional wavelength tunable gate laser, revealing blinking caused by the intrinsic Coulomb blockade due to charge capture processes. Our finding demonstrates that the emission quenching can be actively suppressed by controlling the balance of free electrons and holes in the vicinity of the quantum dot and thereby significantly increasing the quantum efficiency by 30%.

quant-ph

Statistical limits for quantum networks with semiconductor entangled photon sources

Semiconductor quantum dots are promising building blocks for quantum communication applications. Although deterministic, efficient, and coherent emission of entangled photons has been realized, implementing a practical quantum repeater remains outstanding. Here we explore the statistical limits for entanglement swapping with sources of polarization-entangled photons from the commonly used biexciton-exciton cascade. We stress the necessity of tuning the exciton fine structure, and explain why the often observed time evolution of photonic entanglement in quantum dots is not applicable for large quantum networks. We identify the critical, statistically distributed device parameters for entanglement swapping based on two sources. A numerical model for benchmarking the consequences of device fabrication, dynamic tuning techniques, and statistical effects is developed, in order to bring the realization of semiconductor-based quantum networks one step closer to reality.

quant-ph

Deterministic preparation of spin qubits in droplet etched GaAs quantum dots using quasi-resonant excitation

We present a first comprehensive study on deterministic spin preparation employing excited state resonances of droplet etched GaAs quantum dots. This achievement facilitates future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions the properties of different quantum dot energy levels, i.e. shells, are revealed. The innovative use of polarization resolved excitation and detection in quasi-resonant excitation spectroscopy facilitates determination of $85$ $\%$ maximum spin preparation fidelity - irrespective of the relative orientations of lab and quantum dot polarization eigenbases. Additionally, the characteristic non-radiative decay time is investigated as a function of ground state, excitation resonance and excitation power level, yielding decay times as low as $29$ ps for s-p-shell exited state transitions. Finally, by time resolved correlation spectroscopy it is demonstrated that the employed excitation scheme has a significant impact on the electronic environment of quantum dot transitions thereby influencing its charge and coherence.

cond-mat.mes-hall

Maximally entangled and GHz-clocked on-demand photon pair source

We present a 1 GHz-clocked, maximally entangled and on-demand photon pair source based on droplet etched GaAs quantum dots using two-photon excitation. By employing these GaP microlensenhanced devices in conjunction with their substantial brightness, raw entanglement fidelities of up to $0.95 \pm 0.01$ and post-selected photon indistinguishabilities of up to $0.93 \pm 0.01$, the suitability for quantum repeater based long range quantum entanglement distribution schemes is shown. Comprehensive investigations of a complete set of polarization selective two-photon correlations as well as time resolved Hong-Ou-Mandel interferences facilitate innovative methods that determine quantities such as photon extraction and excitation efficiencies as well as pure dephasing directly - opposed to commonly employed indirect techniques.

quant-ph

Depolarization of Electronic Spin Qubits Confined in Semiconductor Quantum Dots

Quantum dots are arguably the best interface between matter spin qubits and flying photonic qubits. Using quantum dot devices to produce joint spin-photonic states requires the electronic spin qubits to be stored for extended times. Therefore, the study of the coherence of spins of various quantum dot confined charge carriers is important both scientifically and technologically. In this study we report on spin relaxation measurements performed on five different forms of electronic spin qubits confined in the very same quantum dot. In particular, we use all optical techniques to measure the spin relaxation of the confined heavy hole and that of the dark exciton - a long lived electron-heavy hole pair with parallel spins. Our measured results for the spin relaxation of the electron, the heavy-hole, the dark exciton, the negative and the positive trions, in the absence of externally applied magnetic field, are in agreement with a central spin theory which attributes the dephasing of the carriers' spin to their hyperfine interactions with the nuclear spins of the atoms forming the quantum dots. We demonstrate that the heavy hole dephases much slower than the electron. We also show, both experimentally and theoretically, that the dark exciton dephases slower than the heavy hole, due to the electron-hole exchange interaction, which partially protects its spin state from dephasing.

cond-mat.mes-hall

Strong light-matter coupling in the presence of lasing

The regime of strong light-matter coupling is typically associated with weak excitation. With current realizations of cavity-QED systems, strong coupling may persevere even at elevated excitation levels sufficient to cross the threshold to lasing. In the presence of stimulated emission, the vacuum-Rabi doublet in the emission spectrum is modified and the established criterion for strong coupling no longer applies. We provide a generalized criterion for strong coupling and the corresponding emission spectrum, which includes the influence of higher Jaynes-Cummings states. The applicability is demonstrated in a theory-experiment comparison of a few-emitter quantum-dot--micropillar laser as a particular realization of the driven dissipative Jaynes-Cummings model. Furthermore, we address the question if and for which parameters true single-emitter lasing can be achieved, and provide evidence for the coexistence of strong coupling and lasing in our system in the presence of background emitter contributions.

physics.optics

Transition from Jaynes-Cummings to Autler-Townes ladder in a quantum dot-microcavity system

We study experimentally and theoretically a coherently-driven strongly-coupled quantum dot-microcavity system. Our focus is on physics of the unexplored intermediate excitation regime where the resonant laser field dresses a strongly-coupled single exciton-photon (polariton) system resulting in a ladder of laser-dressed Jaynes-Cummings states. In that case both the coupling of the emitter to the confined light field of the microcavity and to the light field of the external laser are equally important, as proved by observation of injection pulling of the polariton branches by an external laser. This intermediate interaction regime is of particular interest since it connects the purely quantum mechanical Jaynes-Cummings ladder and the semi-classical Autler-Townes ladder. Exploring the driving strength-dependence of the mutually coupled system we establish the maximum in the resonance fluorescence signal to be a robust fingerprint of the intermediate regime and observe signatures indicating the laser-dressed Jaynes-Cummings ladder. In order to address the underlying physics we excite the coupled system via the matter component of fermionic nature undergoing saturation - in contrast to commonly used cavity-mediated excitation.

cond-mat.mes-hall