arXiv subjects

Changgan Zeng

Publications and source records attributed to Changgan Zeng.

At least 19 recordsLinked to original sources

arXiv2026

Ultrafast Non-Volatile Weyl LuminoMem for Mid-Infrared In-Memory Computing

Integrated optoelectronic systems strive to combine the logic/memory density of electronics with the bandwidth of photonics, but monolithic realization is impeded by the inefficient electronic-to-photonic interface. Current architectures rely on separate readout circuitry and modulators, creating bottlenecks in energy and latency, while existing direct transduction methods often compromise on switching speed or non-volatility. Here, we report an ultrafast, non-volatile optoelectronic memory, named LuminoMem, that integrates electrical storage and mid-infrared light emission in a single device. The device utilizes a floating-gate architecture, in which the Weyl semiconductor tellurium serves simultaneously as a charge-trapping storage layer and an emissive medium. This design enables nanosecond-scale electrical programming of non-volatile photoluminescence at 3.4 um, allowing direct optical access to stored states without external modulation. We demonstrate 4-bit (16-level) optical storage capacity and validate the device's performance through neural network simulations that achieve high accuracy on the Fashion-MNIST dataset. By effectively bridging the gap between electronic storage and mid-infrared photonics, the demonstrated mid-infrared LuminoMem provides a hardware foundation for promoting current computation efficiency and potential intelligent platforms that co-integrate computing, memory, and sensing capabilities.

cond-mat.mtrl-sci↗

arXiv2026

Gate-Tunable Mid-Infrared Electroluminescence from Te/MoS2 p-n Heterojunctions

Mid-infrared (MIR) emitters are critical components in advanced photonic systems, driving progress in fields such as chemical sensing, environmental monitoring, medical diagnostics, thermal imaging and free-space communications. Conventional MIR emitters based on III-V heterostructures rely on complex epitaxial growth on rigid lattice-matched substrates and suffer from limited integration compatibility with CMOS or flexible platforms. The recent development of novel MIR emitters based on two-dimensional (2D) materials such as black phosphorus (BP) is more suitable for on-chip applications but faces challenges related to stability and emission efficiency. Based on the recently discovered highly efficient photoluminescence of Te, we demonstrate a gate-tunable midinfrared light-emitting diode based on a van der Waals heterojunction formed by multilayer transition metal dichalcogenide (TMD) MoS2 and tellurium (Te). The device emits polarized electroluminescence (EL) centered at 3.5 $\mu$m under forward bias at 25 K, and the EL persists up to 80 K with reduced intensity. Gate control of the MoS2 Fermi level modulates the band alignment and injection efficiency, enabling dynamic tuning of the EL intensity. The emission remains spectrally stable under varying bias and gating, indicating robust band-edge recombination. These results establish the Te/TMD heterostructure as a promising platform for integrated polarized mid-infrared optoelectronics.

cond-mat.mes-hall↗

arXiv2024

Electric imaging and dynamics of photo-charged graphene edge

The one-dimensional side gate based on graphene edges shows a significant capability of reducing the channel length of field-effect transistors, further increasing the integration density of semiconductor devices. The nano-scale electric field distribution near the edge provides the physical limit of the effective channel length, however, its imaging under ambient conditions still lacks, which is a critical aspect for the practical deployment of semiconductor devices. Here, we used scanning nitrogen-vacancy microscopy to investigate the electric field distribution near edges of a single-layer-graphene. Real-space scanning maps of photo-charged floating graphene flakes were acquired with a spatial resolution of $\sim$ 10 nm, and the electric edge effect was quantitatively studied by analyzing the NV spin energy level shifts due to the electric Stark effect. Since the graphene flakes are isolated from external electric sources, we brought out a theory based on photo-thermionic effect to explain the charge transfer from graphene to oxygen-terminated diamond probe with a disordered distribution of charge traps. Real-time tracing of electric fields detected the photo-thermionic emission process and the recombination process of the emitted electrons. This study provides a new perspective for graphene-based one-dimensional gates and opto-electronics with nanoscale real-space imaging, and moreover, offers a novel method to tune the chemical environment of diamond surfaces based on optical charge transfer.

cond-mat.mes-hall↗

arXiv2024

Berry phases in Coulomb drag of double-layer graphene system

Recent experiments suggest quantum interference effects in the Coulomb drag of double-layer graphene systems. By accounting for correlated interlayer impurity scattering under a weak magnetic field, our theoretical results reveal drag resistivities resembling those in weak (anti-)localization. It is established that the quantum interference effect is most significant when the chemical potentials match. The theory clarifies the roles of intra- and interlayer Berry phases in Coulomb drag in double-layer graphene systems and helps delineate the intra- and intervalley contributions. These insights are valuable for designing graphene-based electronic devices exploiting quantum effects.

cond-mat.mes-hall↗

arXiv2022

Josephson-Coulomb drag effect between graphene and LaAlO3/SrTiO3 interfacial superconductor

Coulomb drag refers to the phenomenon that a charge current in one electronic circuit induces a responsive current in a neighboring circuit solely through Coulomb interactions. For conventional interactions between fermionic particles such as electrons, the as-induced drag current in the passive layer is orders of magnitude weaker than the active current due to strong dielectric screening effect between the two. Here we propose a 'super' Coulomb drag effect between an active normal conductor and a passive superconductor of Josephson junction arrays, whereby the passive current can greatly exceed the active. The drag force originates from the interactions between the substantially enhanced dynamical quantum fluctuations of the superconducting phases in the passive layer and the normal electrons in the active layer. We demonstrate this effect in the devices composed of monolayer graphene and LaAlO3/SrTiO3 heterointerface, an inherently non-uniform superconductor described by Josephson junction arrays. Remarkable drag signal is observed in the superconducting transition regime of the LaAlO3/SrTiO3 interface, with its sign independent of the carrier type in the graphene layer. The estimated passive-to-active ratio can reach about 0.3 at the optimal gate voltage and the temperature dependence follows that of the typical Josephson energy between superconducting puddles. Strikingly, the ratio ought to be as large as 10^5 at zero temperature by theoretical extrapolation. From engineering perspective, our device may work as current or voltage transformers, and the drag mechanism lays the foundation for synchronizing Josephson-junction-array-based terahertz radiators.

cond-mat.mes-hall↗

arXiv2021

Highly efficient nonvolatile magnetization switching and multi-level states by current in single van der Waals topological ferromagnet Fe3GeTe2

Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here we achieve nonvolatile and highly energy-efficient magnetization switching in a single-material device formed of van-der-Waals topological ferromagnet Fe3GeTe2, whose magnetic information can be readily controlled by a tiny current. Furthermore, the switching current density and power dissipation are about 400 and 4000 times smaller than those of the existing spin-orbit-torque magnetic random access memory based on conventional magnet/heavy-metal systems. Most importantly, we also demonstrate multi-level states, switched by electrical current, which can dramatically enhance the information capacity density and reduce computing costs. Thus, our observations combine both high energy efficiency and large information capacity density in one device, showcasing the potential applications of the emerging field of van-der-Waals magnets in the field of spin memory and spintronics.

cond-mat.mtrl-sci↗

arXiv2021

Quantum percolation and magnetic nano-dropletstates in electronically phase-separated manganite nanowires

One-dimensional (1D) confinement has been revealed to effectively tune the properties of materials in homogeneous states. The 1D physics can be further enriched by electronic inhomogeneity, which unfortunately remains largely unknown. Here we demonstrate the ultra-high sensitivity to magnetic fluctuations and the tunability of phase stability in the electronic transport properties of self-assembled electronically phase-separated manganite nanowires with extreme aspect ratio. The onset of magnetic nano-droplet state, a precursor to the ferromagnetic metallic state, is unambiguously revealed, which is attributed to the small lateral size of the nanowires that is comparable to the droplet size. Moreover, the quasi-1D anisotropy stabilizes thin insulating domains to form intrinsic tunneling junctions in the low temperature range, which is robust even under magnetic field up to 14 T, and thus essentially modifies the classic 1D percolation picture to stabilize a novel quantum percolation state. A new phase diagram is therefore established for the manganite system under quasi-1D confinement for the first time. Our findings offer new insight to understand and manipulate the colorful properties of the electronically phase-separated systems via dimensionality engineering.

cond-mat.str-el↗

arXiv2021

Room-Temperature Anisotropic Plasma Mirror and Polarization-Controlled Optical Switch Based on Type-II Weyl Semimetal WP2

Anisotropy in electronic structures may ignite intriguing anisotropic optical responses, as has been well demonstrated in various systems including superconductors, semiconductors, and even topological Weyl semimetals. Meanwhile, it is well established in metal optics that the metal reflectance declines from one to zero when the photon frequency is above the plasma frequency ωp , behaving as a plasma mirror. However, the exploration of anisotropic plasma mirrors and corresponding applications remains elusive, especially at room temperature. Here, we discover a pronounced anisotropic plasma reflectance edge in the type-II Weyl semimetal WP2, with an anisotropy ratio of ωp up to 1.5. Such anisotropic plasma mirror behavior and its robustness against temperature promise optical device applications over a wide temperature range. For example, the high sensitivity of polarization-resolved plasma reflectance edge renders WP2 an inherent polarization detector. We further achieve a room-temperature WP2-based optical switch, effectively controlled by simply tuning the light polarization. These findings extend the frontiers of metal optics as a discipline and promise the design of multifunctional devices combining both topological and optical features.

cond-mat.mtrl-sci↗

arXiv2020

Butterfly-like anisotropic magnetoresistance and angle-dependent Berry phase in Type-II Weyl semimetal WP2

Weyl semimetal emerges as a new topologically nontrivial phase of matter, hosting low-energy excitations of massless Weyl fermions. Here, we present a comprehensive study of the type-II Weyl semimetal WP2. Transport studies show a butterfly-like magnetoresistance at low temperature, reflecting the anisotropy of the electron Fermi surfaces. The four-lobed feature gradually evolves into a two-lobed one upon increasing temperature, mainly due to the reduced relative contribution of electron Fermi surfaces compared to hole Fermi surfaces for the magnetoresistance. Moreover, angle-dependent Berry phase is further discovered from the quantum oscillations, which is ascribed to the effective manipulation of the extremal Fermi orbits by the magnetic field to feel the nearby topological singularities in the momentum space. The revealed topological characters and anisotropic Fermi surfaces of WP2 substantially enrich the physical properties of Weyl semimetals and hold great promises in topological electronic and Fermitronic device applications.

cond-mat.mtrl-sci↗

arXiv2020

Dirac Fermions in Antiferromagnetic FeSn Kagome Lattices with Combined Space Inversion and Time Reversal Symmetry

Symmetry principles play a critical role in formulating the fundamental laws of nature, with a large number of symmetry-protected topological states identified in recent studies of quantum materials. As compelling examples, massless Dirac fermions are jointly protected by the space inversion symmetry $P$ and time reversal symmetry $T$ supplemented by additional crystalline symmetry, while evolving into Weyl fermions when either $P$ or $T$ is broken. Here, based on first-principles calculations, we reveal that massless Dirac fermions are present in a layered FeSn crystal containing antiferromagnetically coupled ferromagnetic Fe kagome layers, where each of the $P$ and $T$ symmetries is individually broken but the combined $PT$ symmetry is preserved. These stable Dirac fermions protected by the combined $PT$ symmetry with additional non-symmorphic $S_{\rm{2z}}$ symmetry can be transformed to either massless/massive Weyl or massive Dirac fermions by breaking the $PT$ or $S_{\rm{2z}}$ symmetry. Our angle-resolved photoemission spectroscopy experiments indeed observed the Dirac states in the bulk and two-dimensional Weyl-like states at the surface. The present study substantially enriches our fundamental understanding of the intricate connections between symmetries and topologies of matter, especially with the spin degree of freedom playing a vital role.

cond-mat.mtrl-sci↗

arXiv2019

Moiré Engineering of Electronic Phenomena in Correlated Oxides

Moiré engineering has recently emerged as a capable approach to control quantum phenomena in condensed matter systems. In van der Waals heterostructures, moiré patterns can be formed by lattice misorientation between adjacent atomic layers, creating long range electronic order. To date, moiré engineering has been executed solely in stacked van der Waals multilayers. Herein, we describe our discovery of electronic moiré patterns in films of a prototypical magnetoresistive oxide La0.67Sr0.33MnO3 (LSMO) epitaxially grown on LaAlO3 (LAO) substrates. Using scanning probe nano-imaging, we observe microscopic moiré profiles attributed to the coexistence and interaction of two distinct incommensurate patterns of strain modulation within these films. The net effect is that both electronic conductivity and ferromagnetism of LSMO are modulated by periodic moiré textures extending over mesoscopic scales. Our work provides an entirely new route with potential to achieve spatially patterned electronic textures on demand in strained epitaxial materials.

cond-mat.mes-hall↗

arXiv2019

Evidence for Weyl fermions in the elemental semiconductor tellurium

The recent discovery of Weyl fermions in solids enables exploitation of relativistic physics and development of a spectrum of intriguing physical phenomena. They are constituted of pairs of Weyl points with two-fold band degeneracy, which in principle can be hosted in any materials without inversion or time-reversal symmetry. However, previous studies of Weyl fermions have been limited exclusively to semimetals. Here, by combining magneto-transport measurements, angle-resolved photoemission spectroscopy, and band structure calculations, Weyl fermions are identified in an elemental semiconductor tellurium. This is mainly achieved by direct observation of the representative transport signatures of the chiral anomaly, including the negative longitudinal magnetoresistance and the planar Hall effect. Semiconductor materials are well suited for band engineering, and therefore provide an ideal platform for manipulating the fundamental Weyl fermionic behaviors. Furthermore, introduction of Weyl physics into semiconductors to develop "Weyl semiconductors" also creates a new degree of freedom for the future design of semiconductor electronic and optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2018

Topological Zero-Line Modes in Folded Bilayer Graphene

We theoretically investigate a folded bilayer graphene structure as an experimentally realizable platform to produce the one-dimensional topological zero-line modes. We demonstrate that the folded bilayer graphene under an external gate potential enables tunable topologically conducting channels to be formed in the folded region, and that a perpendicular magnetic field can be used to enhance the conducting when external impurities are present. We also show experimentally that our proposed folded bilayer graphene structure can be fabricated in a controllable manner. Our proposed system greatly simplifies the technical difficulty in the original proposal by considering a planar bilayer graphene (i.e., precisely manipulating the alignment between vertical and lateral gates on bilayer graphene), laying out a new strategy in designing practical low-power electronics by utilizing the gate induced topological conducting channels.

cond-mat.mes-hall↗

arXiv2017

Gate tunable third-order nonlinear optical response of massless Dirac fermions in graphene

Materials with massless Dirac fermions can possess exceptionally strong and widely tunable optical nonlinearities. Experiments on graphene monolayer have indeed found very large third-order nonlinear responses, but the reported variation of the nonlinear optical coefficient by orders of magnitude is not yet understood. A large part of the difficulty is the lack of information on how doping or chemical potential affects the different nonlinear optical processes. Here we report the first experimental study, in corroboration with theory, on third harmonic generation (THG) and four-wave mixing (FWM) in graphene that has its chemical potential tuned by ion-gel gating. THG was seen to have enhanced by ~30 times when pristine graphene was heavily doped, while difference-frequency FWM appeared just the opposite. The latter was found to have a strong divergence toward degenerate FWM in undoped graphene, leading to a giant third-order nonlinearity. These truly amazing characteristics of graphene come from the possibility to gate-control the chemical potential, which selectively switches on and off one- and multi-photon resonant transitions that coherently contribute to the optical nonlinearity, and therefore can be utilized to develop graphene-based nonlinear optoelectronic devices.

cond-mat.mes-hall↗

arXiv2016

Band gap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

Here we report the successful growth of MoSe2 on single layer hexagonal boron nitride (hBN) on Ru(0001) substrate by using molecular beam epitaxy. We investigated the electronic structures of MoSe2 using scanning tunneling microscopy and spectroscopy. Surprisingly, we found that the quasi-particle gap of the MoSe2 on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We attribute this result to the strong interaction between hBN/Ru which causes residual metallic screening from the substrate. The surface of MoSe2 exhibits Moiré pattern that replicates the Moiré pattern of hBN/Ru. In addition, the electronic structure and the work function of MoSe2 are modulated electrostatically with an amplitude of ~ 0.13 eV. Most interestingly, this electrostatic modulation is spatially in phase with the Moiré pattern of hBN on Ru(0001) whose surface also exhibits a work function modulation of the same amplitude.

cond-mat.mtrl-sci↗

arXiv2015

Ab-initio Studies of (Li$_{0.8}$Fe$_{0.2}$)OHFeSe Superconductors: Revealing the Dual Roles of Fe$_{0.2}$ in Structural Stability and Charge Transfer

The recently discovered (Li$_{0.8}$Fe$_{0.2}$)OHFeSe superconductor provides a new platform for exploiting the microscopic mechanisms of high-$T_c$ superconductivity in FeSe-derived systems. Using density functional theory calculations, we first show that substitution of Li by Fe not only significantly strengthens the attraction between the (Li$_{0.8}$Fe$_{0.2}$)OH spacing layers and the FeSe superconducting layers along the \emph{c} axis, but also minimizes the lattice mismatch between the two in the \emph{ab} plane, both favorable for stabilizing the overall structure. Next we explore the electron injection into FeSe from the spacing layers, and unambiguously identify the Fe$_{0.2}$ components to be the dominant atomic origin of the dramatically enhanced interlayer charge transfer. We further reveal that the system strongly favors collinear antiferromagnetic ordering in the FeSe layers, but the spacing layers can be either antiferromagnetic or ferromagnetic depending on the Fe$_{0.2}$ spatial distribution. Based on these understandings, we also predict (Li$_{0.8}$Co$_{0.2}$)OHFeSe to be structurally stable with even larger electron injection and potentially higher $T_c$.

cond-mat.supr-con↗

arXiv2015

Equivalence of Electronic and Mechanical Stresses in Structural Phase Stabilization: A Case Study of Indium Wires on Si(111)

It was recently proposed that the stress state of a material can also be altered via electron or hole doping, a concept termed electronic stress (ES), which is different from the traditional mechanical stress (MS) due to lattice contraction or expansion. Here we demonstrate the equivalence of ES and MS in structural stabilization, using In wires on Si(111) as a prototypical example. Our systematic density-functional theory calculations reveal that, first, for the same degrees of carrier doping into the In wires, the ES of the high-temperature metallic 4x1 structure is only slightly compressive, while that of the low-temperature insulating 8x2 structure is much larger and highly anisotropic. As a consequence, the intrinsic energy difference between the two phases is significantly reduced towards electronically phase-separated ground states. Our calculations further demonstrate quantitatively that such intriguing phase tunabilities can be achieved equivalently via lattice-contraction induced MS in the absence of charge doping. We also validate the equivalence through our detailed scanning tunneling microscopy experiments. The present findings have important implications in understanding the underlying driving forces involved in various phase transitions of simple and complex systems alike.

cond-mat.mes-hall↗

arXiv2015

Single-Valley Engineering in Graphene Superlattices

The two inequivalent valleys in graphene preclude the protection against inter-valley scattering offered by an odd-number of Dirac cones characteristic of Z2 topological insulator phases. Here we propose a way to engineer a chiral single-valley metallic phase with quadratic crossover in a honeycomb lattice through tailored \sqrt{3}N *\sqrt{3}N or 3N *3N superlattices. The possibility of tuning valley-polarization via pseudo-Zeeman field and the emergence of Dresselhaus-type valley-orbit coupling are proposed in adatom decorated graphene superlattices. Such valley manipulation mechanisms and metallic phase can also find applications in honeycomb photonic crystals.

cond-mat.mtrl-sci↗