arXiv subjects

Changgan Zeng

Publications and source records attributed to Changgan Zeng.

23 records · Page 2Linked to original sources

arXiv2011

Atomic structure, energetics, and dynamics of topological solitons in Indium chains on Si(111) surfaces

Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variable-temperature measurements of the soliton population allow us to determine the soliton formation energy to be ~60 meV, smaller than one half of the band gap of ~200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field-enhanced soliton dynamics.

cond-mat.mes-hall↗

arXiv2011

Chemical Vapor Deposition Growth of Graphene using Other Hydrocarbon Sources

Graphene has attracted a lot of research interests due to its exotic properties and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000°C, is required for such growth. Here we demonstrate a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400°C. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300°C. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a way to undemanding route for economical and convenient graphene growth.

cond-mat.mtrl-sci↗

arXiv2009

Universal $\sqrt{2}\times\sqrt{2}$ structure and short-range charge order at the surfaces of BaFe$_{2-x}$Co$_{x}$As$_{2}$ compounds with various Co doping levels

The structure and electronic order at the cleaved (001) surfaces of the newly-discovered pnictide superconductors BaFe$_{2-x}$Co$_{x}$As$_{2}$ with x ranging from 0 to 0.32 are systematically investigated by scanning tunneling microscopy. A $\sqrt{2}\times\sqrt{2}$ surface structure is revealed for all the compounds, and is identified to be Ba layer with half Ba atoms lifted-off by combination with theoretical simulation. A universal short-range charge order is observed at this $\sqrt{2}\times\sqrt{2}$ surface associated with an energy gap of about 30 meV for all the compounds.

cond-mat.supr-con↗

arXiv2006

Linear magnetization dependence of the intrinsic anomalous Hall effect

The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn$_5$Ge$_3$. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect, and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and experiment is remarkably good, not only near 0 K, but also at finite temperatures, up to about ~ 240 K (0.8 T$_C$})

cond-mat.mes-hall↗

arXiv2004

Spin Polarization and Electonic Structure of Room-Curie Ferromagnetic Mn5Ge3 Epilayers

Germanium-based alloys hold great promise for future spintronics applications, due to their potential for integration with conventional Si-based electronics. Mn5Ge3 exhibits strong ferromagnetism up to the Curie temperature Tc~295K. We use Point Contact Andreev Reflection (PCAR) spectroscopy to measure the spin polarization of Mn5Ge3 epilayers grown by solid phase epitaxy on Ge(111). In addition, we calculate the spin polarization of bulk Mn5Ge3 in the diffusive and ballistic regimes using density-functional theory. The measured spin polarization, Pc=43+/-5% is compared to our theoretical estimates, PDFT=10+/-5% and 35+/-5% in the ballistic and diffusive limits respectively.

cond-mat.str-el↗