arXiv subjects

Chao-Xing Liu

Publications and source records attributed to Chao-Xing Liu.

At least 37 records · Page 2Linked to original sources

arXiv2025

Interlayer Coupling-Induced Quantum Phase Transition in Quantum Anomalous Hall Multilayers

A quantum phase transition arises from competition between different ground states and is typically accessed by varying a single physical parameter near absolute zero temperature. The quantum anomalous Hall (QAH) effect with high Chern number C has recently been achieved in magnetic topological insulator (TI) multilayers. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI penta-layers by varying the thickness of the middle magnetic TI layer, designated as m quintuple layers. Electrical transport measurements demonstrate a quantum phase transition between C = 1 and C = 2 QAH states. For m 1 and m 2, the sample exhibits the well-quantized C = 1 and C = 2 QAH states, respectively. For 1 m 2, we observe a monotonic decrease in Hall resistance from h/e2 to h/2e2 with increasing m, accompanied by a peak in the longitudinal resistance. The quantum phase transition between C = 1 and C = 2 QAH states is attributed to the weakening of the interlayer coupling between the top and the bottom C = 1 QAH layers. Our findings provide a scalable strategy for engineering QAH devices with a tunable Chern number. This approach enables precise control and enhanced functionality in chiral edge current-based electronic devices.

cond-mat.mes-hall↗

arXiv2025

A Topological Superconductor Tuned by Electronic Correlations

A topological superconductor, characterized by either a chiral order parameter or a chiral topological surface state in proximity to bulk superconductivity, is foundational to topological quantum computing. As in other topological phases of matter, electronic correlations can tune topological superconductivity via modifications of the low-energy Fermiology. Such tuning has not been realized so far. Here we uncover a unique topological superconducting phase in competition with electronic correlations in 10-unit-cell thick FeTe$_{x}$Se$_{1-x}$ films grown on SrTiO$_{3}$ substrates. When the Te content $x$ exceeds $0.7$, we observe a rapid increase of the effective mass for the Fe $d_{xy}$ band, with the emergence of a superconducting topological surface state confirmed by high-resolution angle-resolved photoemission spectroscopy; however, near the FeTe limit, the system enters an incoherent regime where the topological surface state becomes unidentifiable and superconductivity is suppressed. Theory suggests that the electron-electron interactions in the odd-parity $xy^-$ band with a strong $d_{xy}$ character lead to an orbital-selective correlated phase. Our work establishes FeTe$_{x}$Se$_{1-x}$ thin films as a unique platform where electronic correlations sensitively modulate topological superconductivity, suggesting opportunities to use tunable electron-electron interactions to engineer new topological phases in a broad class of materials.

cond-mat.supr-con↗

arXiv2024

Magnetic-resonance-induced nonlinear current response in magnetic Weyl semimetals

In this work, we propose a geometric nonlinear current response induced by magnetic resonance in magnetic Weyl semimetals. This phenomenon is in analog to the quantized circular photogalvanic effect previously proposed for Weyl semimetal phases of chiral crystals. However, the nonlinear current response in our case can occur in magnetic Weyl semimetals where time-reversal symmetry, instead of inversion symmetry, is broken. The occurrence of this phenomenon relies on the special coupling between Weyl electrons and magnetic fluctuations induced by magnetic resonance. To further support our analytical solution, we perform numerical studies on a model Hamiltonian describing the Weyl semimetal phase in a topological insulator system with ferromagnetism.

cond-mat.mes-hall↗

arXiv2024

Nodal Nematic Superconductivity in Multiple-Flat-Band Land

In this work, we propose a mechanism of inducing stable nodal superconductivity for multiple-flat-band systems. This mechanism is based on the degenerate flat band nature, so that not only intra-eigen-band pairing, but also inter-eigen-band pairing has a significant influence on the superconductivity properties. Based on the Bogoliubov de Gennes formalism of the heavy fermion model for the twisted bilayer graphene as an example, we show that although the nodal nematic d-wave pairing has higher energy around the nodal points compared to the chiral d-wave pairing in the momentum space, the inter-eigen-band pairing can lower the energy in other momenta away from the nodes, so that the nematic d-wave pairing is energetically favored for its overall condensation energy. This type of mechanism is particular to multiple-flat-band systems with no Fermi surfaces.

cond-mat.supr-con↗

arXiv2024

Hybrid-order topology in unconventional magnets of Eu-based Zintl compounds with surface-dependent quantum geometry

The exploration of magnetic topological insulators is instrumental in exploring axion electrodynamics and intriguing transport phenomena, such as the quantum anomalous Hall effect. Here, we report that a family of magnetic compounds Eu$_{2n+1}$In$_{2}$(As,Sb)$_{2n+2}$ ($n=0,1,2$) exhibit both gapless Dirac surface states and chiral hinge modes. Such a hybrid-order topology hatches surface-dependent quantum geometry. By mapping the responses into real space, we demonstrate the existence of chiral hinge modes along the $c$ direction, which originate from the half-quantized anomalous Hall effect on two gapped $ac$/$bc$ facets due to Berry curvature, while the unpinned Dirac surface states on the gapless $ab$ facet generate an intrinsic nonlinear anomalous Hall effect due to the quantum metric. When Eu$_{3}$In$_{2}$As$_{4}$ is polarized to the ferromagnetic phase by an external magnetic field, it becomes an ideal Weyl semimetal with a single pair of type-I Weyl points and no extra Fermi pocket. Our work predicts rich topological states sensitive to magnetic structures, quantum geometry-induced transport and topological superconductivity if proximitized with a superconductor.

cond-mat.mtrl-sci↗

arXiv2024

Electrical control of intrinsic nonlinear Hall effect in antiferromagnetic topological insulator sandwiches

Nonlinear Hall effect (NHE) can originate from the quantum metric mechanism in antiferromagnetic topological materials with PT symmetry, which has been experimentally observed in MnBi2Te4. In this work, we propose that breaking PT symmetry via external electric fields can lead to a dramatic enhancement of NHE, thus allowing for an electric control of NHE. Microscopically, this is because breaking PT symmetry can lift spin degeneracy of a Kramers' pair, giving rise to additional contributions within one Kramers' pair of bands. We demonstrate this enhancement through a model Hamiltonian that describes an antiferromagnetic topological insulator sandwich structure.

cond-mat.mes-hall↗

arXiv2024

Engineering Miniband Topology via Band-Folding in Moiré Superlattice Materials

The emergence of topologically non-trivial flat bands in moiré materials provides an opportunity to explore the interplay between topological physics and correlation effects, leading to the recent experimental realization of interacting topological phases, e.g. fractional Chern insulators. In this work, we propose a mechanism of band inversion induced by band-folding from the moiré superlattice potential for engineering topological minibands in moiré materials. We illustrate this mechanism via two classes of model Hamiltonians, namely the Rashba model and the Bernevig-Hughes-Zhang (BHZ) model, under the moiré superlattice potentials. Moiré minibands with non-trivial band topology, including Z2 number, mirror Chern number and fragile topology, have been found and the topological phase diagram is constructed for these moiré models. A general theory based on band representations in the morié Brillouin zone is also developed for a generalization of this mechanism to other space groups. Possible experimental realizations of our model Hamiltonian are discussed.

cond-mat.mes-hall↗

arXiv2024

Electrically Controlled Anomalous Hall Effect and Orbital Magnetization in Topological Magnet MnBi2Te4

In this work, we propose an intrinsic mechanism to understand the even-odd effect, namely the opposite signs of the anomalous Hall resistance and the different shapes of hysteresis loops for even and odd septuple layers (SLs), of MBE-grown MnBi2Te4 thin films with electron doping. In particular, we show that the non-zero hysteresis loops in the anomalous Hall and magnetic circular dichroism measurements for even-SLs MnBi2Te4 films are originated from two different anti-ferromagnetic (AFM) states with opposite magnetoelectric coefficients that give rise to different energies of zeroth Landau levels of the surface states in this model. The complex form of the anomalous Hall hysteresis loop in even-SLs MnBi2Te4 films can be understood from two magnetic transitions, a transition from one AFM state to the other AFM state followed by a second transition to the ferromagnetic state. Our model also provides a microscopic understanding of the electrical switching between two AFM states via the axion electrodynamics in even-SL MnBi2Te4 films. We further study orbital magnetization and magnetoelectric coefficient in MnBi2Te4 films, and find an even-odd oscillation behavior of the magnetoelectric coefficient.

cond-mat.mtrl-sci↗

arXiv2024

Localized interfacial Phonon Modes at the Electronic Axion Domain Wall

The most salient feature of electronic topological states of matter is the existence of exotic electronic modes localized at the surface or interface of a sample. In this work, in an electronic topological system, we demonstrate the existence of localized phonon modes at the domain wall between topologically trivial and non-trivial regions, in addition to the localized interfacial electronic states. In particular, we consider a theoretical model for the Dirac semimetal with a gap opened by external strains and study the phonon dynamics, which couples to electronic degrees of freedom via strong electron-phonon interaction. By treating the phonon modes as a pseudo-gauge field, we find that the axion type of terms for phonon dynamics can emerge in gapped Dirac semimetal model and lead to interfacial phonon modes localized at the domain wall between trivial and non-trivial regimes that possess the axion parameters 0 and π, respectively. We also discuss the physical properties and possible experimental probe of such interfacial phonon modes.

cond-mat.mes-hall↗

arXiv2024

Engineering Plateau Phase Transition in Quantum Anomalous Hall Multilayers

The plateau phase transition in quantum anomalous Hall (QAH) insulators corresponds to a quantum state wherein a single magnetic domain gives way to multiple magnetic domains and then re-converges back to a single magnetic domain. The layer structure of the sample provides an external knob for adjusting the Chern number C of the QAH insulators. Here, we employ molecular beam epitaxy (MBE) to grow magnetic topological insulator (TI) multilayers with an asymmetric layer structure and realize the magnetic field-driven plateau phase transition between two QAH states with odd Chern number change ΔC. In multilayer structures with C=+-1 and C=+-2 QAH states, we find two characteristic power-law behaviors between temperature and the scaling variables on the magnetic field at transition points. The critical exponents extracted for the plateau phase transitions with ΔC=1 and ΔC=3 in QAH insulators are found to be nearly identical, specifically, k1~0.390+-0.021 and k2~0.388+-0.015, respectively. We construct a four-layer Chalker-Coddington network model to understand the consistent critical exponents for the plateau phase transitions with ΔC=1 and ΔC=3. This work will motivate further investigations into the critical behaviors of plateau phase transitions with different ΔC in QAH insulators and provide new opportunities for the development of QAH chiral edge current-based electronic and spintronic devices.

cond-mat.mes-hall↗

arXiv2023

Three-Dimensional Quantum Anomalous Hall Effect in Magnetic Topological Insulator Trilayers of Hundred-Nanometer Thickness

Magnetic topological states refer to a class of exotic phases in magnetic materials with their non-trivial topological property determined by magnetic spin configurations. An example of such states is the quantum anomalous Hall (QAH) state, which is a zero magnetic field manifestation of the quantum Hall effect. Current research in this direction focuses on QAH insulators with a thickness of less than 10nm. The thick QAH insulators in the three-dimensional(3D) regime are limited, largely due to inevitable bulk carriers being introduced in thick magnetic TI samples. Here, we employ molecular beam epitaxy (MBE) to synthesize magnetic TI trilayers with a thickness of up to ~106 nm. We find these samples exhibit well-quantized Hall resistance and vanishing longitudinal resistance at zero magnetic field. By varying magnetic dopants, gate voltages, temperature, and external magnetic fields, we examine the properties of these thick QAH insulators and demonstrate the robustness of the 3D QAH effect. The realization of the well-quantized 3D QAH effect indicates that the nonchiral side surface states of our thick magnetic TI trilayers are gapped and thus do not affect the QAH quantization. The 3D QAH insulators of hundred-nanometer thickness provide a promising platform for the exploration of fundamental physics, including axion physics and image magnetic monopole, and the advancement of electronic and spintronic devices to circumvent Moore's law.

cond-mat.mes-hall↗

arXiv2023

Interface-Induced Superconductivity in Magnetic Topological Insulator-Iron Chalcogenide Heterostructures

When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We discover emergent interface-induced superconductivity in these heterostructures and demonstrate the trifecta occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer, the three essential ingredients of chiral TSC. The unusual coexistence of ferromagnetism and superconductivity can be attributed to the high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. The magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics, constituting an important step toward scalable topological quantum computation.

cond-mat.mes-hall↗

arXiv2023

Dirac-Fermion-Assisted Interfacial Superconductivity in Epitaxial Topological Insulator/Iron Chalcogenide Heterostructures

Over the last decade, the possibility of realizing topological superconductivity (TSC) has generated much excitement, mainly due to the potential use of its excitations (Majorana zero modes) in a fault-tolerant topological quantum computer 1,2. TSC can be created in electronic systems where the topological and superconducting orders coexist3, motivating the continued exploration of candidate material platforms to this end. Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures that host emergent interfacial superconductivity when a non-superconducting antiferromagnet (FeTe) is interfaced with a topological insulator (TI) (Bi, Sb)2Te3 wherein the chemical potential can be tuned through varying the Bi/Sb ratio. By performing in-vacuo angle-resolved photoemission spectroscopy (ARPES) and ex-situ electrical transport measurements, we find that the superconducting transition temperature and the upper critical magnetic field are suppressed when the chemical potential approaches the Dirac point. This observation implies a direct correlation between the interfacial superconductivity and Dirac electrons of the TI layer. We provide evidence to show that the observed interfacial superconductivity and its chemical potential dependence is the result of the competition between the Ruderman-Kittel-Kasuya-Yosida-type ferromagnetic coupling mediated by Dirac surface states and antiferromagnetic exchange couplings that generate the bicollinear antiferromagnetic order in the FeTe layer. The Dirac-fermion-assisted interfacial superconductivity in (Bi,Sb)2Te3/FeTe heterostructures provides a new approach to probe TSC and Majorana physics in hybrid devices and potentially constitutes an alternative platform for topological quantum computation.

cond-mat.mes-hall↗

arXiv2023

Axion Insulator State in Hundred-Nanometer-Thick Magnetic Topological Insulator Sandwich Heterostructures

An axion insulator is a three-dimensional (3D) topological insulator (TI), in which the bulk maintains the time-reversal symmetry or inversion symmetry but the surface states are gapped by surface magnetization. The axion insulator state has been observed in molecular beam epitaxy (MBE)-grown magnetically doped TI sandwiches and exfoliated intrinsic magnetic TI MnBi2Te4 flakes with an even number layer. All these samples have a thickness of ~10 nm, near the 2D-to-3D boundary. The coupling between the top and bottom surface states in thin samples may hinder the observation of quantized topological magnetoelectric response. Here, we employ MBE to synthesize magnetic TI sandwich heterostructures and find that the axion insulator state persists in a 3D sample with a thickness of ~106 nm. Our transport results show that the axion insulator state starts to emerge when the thickness of the middle undoped TI layer is greater than ~3 nm. The 3D hundred-nanometer-thick axion insulator provides a promising platform for the exploration of the topological magnetoelectric effect and other emergent magnetic topological states, such as the high-order TI phase.

cond-mat.mes-hall↗

arXiv2023

$\mathbb Z_2$-Nontrivial Moiré Minibands and Interaction-Driven Quantum Anomalous Hall Insulators in Topological Insulator Based Moiré Heterostructures

We studied electronic band structure and topological property of a topological insulator thin film under a moiré superlattice potential to search for two-dimensional (2D) $\mathbb Z_2$ non-trivial isolated mini-bands. To model this system, we assume the Fermi energy inside the bulk band gap and thus consider an effective model Hamiltonian with only two surface states that are located at the top and bottom surfaces and strongly hybridized with each other. The moiré potential is generated by another layer of 2D insulating materials on top of topological insulator films. In this model, the lowest conduction (highest valence) mini-bands can be $\mathbb Z_2$ non-trivial when the minima (maxima) of the moiré potential approximately forms a hexagonal lattice with six-fold rotation symmetry. For the nontrivial conduction mini-band cases, the two lowest Kramers' pairs of conduction mini-bands both have nontrivial $\mathbb Z_2$ invariant in presence of inversion, while applying external gate voltages to break inversion leads to only the lowest Kramers' pair of mini-bands to be topologically non-trivial. The Coulomb interaction can drive the lowest conduction Kramers' mini-bands into the quantum anomalous Hall state when they are half-filled, which is further stabilized by breaking inversion symmetry. We propose the monolayer Sb$_{2}$ on top of Sb$_2$Te$_3$ thin films to realize our model based on results from the first principles calculations.

cond-mat.mes-hall↗

arXiv2023

Electron-K-Phonon Interaction In Twisted Bilayer Graphene

We develop an analytic theory to describe the interaction between electrons and K-phonons and study its influence on superconductivity in the bare bands of twisted bilayer graphene (TBG). We find that, due to symmetry and the two-center approximation, only one optical K-phonon (~ 160meV) of graphene is responsible for inter-valley electron-phonon interaction. This phonon has recently been found in angular-resolved photo-emission spectroscopy to be responsible for replicas of the TBG flat bands. By projecting the interaction to the TBG flat bands, we perform the full symmetry analysis of phonon-mediated attractive interaction and pairing channels in the Chern basis, and show that several channels are guaranteed to have gapless order parameters. From the linearized gap equations, we find that the highest Tc pairing induced by this phonon is a singlet gapped s-wave inter-Chern-band order parameter, followed closely by a gapless nematic d-wave intra-Chern-band order parameter. We justify these results analytically, using the topological heavy fermion mapping of TBG which has allowed us to obtain an analytic form of phonon-mediated attractive interaction and to analytically solve the linearized and T=0 gap equations. For the intra-Chern-band channel, the nematic state with nodes is shown to be stabilized in the chiral flat band limit. While the flat band Coulomb interaction can be screened sufficiently enough - around Van-Hove singularities - to allow for electron-phonon based superconductivity, it is unlikely that this effect can be maintained in the lower density of states excitation bands around the correlated insulator states.

cond-mat.supr-con↗

arXiv2022

Competing Vortex Topologies in Iron-based Superconductors

In this work, we establish a new theoretical paradigm for vortex Majorana physics in the recently discovered topological iron-based superconductors (tFeSCs). While tFeSCs are widely accepted as an exemplar of topological insulators (TIs) with intrinsic $s$-wave superconductivity, our theory implies that such common belief could be oversimplified. Our main finding is that the normal-state bulk Dirac nodes, usually ignored in TI-based vortex Majorana theories for tFeSCs, will play a key role of determining the vortex state topology. In particular, the interplay between TI and Dirac nodal bands will lead to multiple competing topological phases for a superconducting vortex line in tFeSCs, including an unprecedented hybrid topological vortex state that carries both Majorana bound states and a gapless dispersion. Remarkably, this exotic hybrid vortex phase generally exists in the vortex phase diagram for our minimal model for tFeSCs and is directly relevant to tFeSC candidates such as LiFeAs.When the four-fold rotation symmetry is broken by vortex-line tilting or curving, the hybrid vortex gets topologically trivialized and becomes Majorana-free, which could explain the puzzle of ubiquitous trivial vortices observed in LiFeAs. Origin of Majorana signal in other tFeSC candidates such as FeTe$_x$Se$_{1-x}$ and CaKFe$_4$As$_4$ are also interpreted within our theory framework. Our theory sheds new light on theoretically understanding and experimentally engineering Majorana physics in high-temperature iron-based systems.

cond-mat.supr-con↗

arXiv2022

Delicate Ferromagnetism in MnBi$_6$Te$_{10}$

Tailoring magnetic orders in topological insulators is critical to the realization of topological quantum phenomena. An outstanding challenge is to find a material where atomic defects lead to tunable magnetic orders while maintaining a nontrivial topology. Here, by combining magnetization measurements, angle-resolved photoemission spectroscopy, and transmission electron microscopy, we reveal disorder-enabled, tunable magnetic ground states in MnBi$_6$Te$_{10}$. In the ferromagnetic phase, an energy gap of 15 meV is resolved at the Dirac point on the MnBi$_2$Te$_4$ termination. In contrast, antiferromagnetic MnBi$_6$Te$_{10}$ exhibits gapless topological surface states on all terminations. Transmission electron microscopy and magnetization measurements reveal substantial Mn vacancies and Mn migration in ferromagnetic MnBi$_6$Te$_{10}$. We provide a conceptual framework where a cooperative interplay of these defects drives a delicate change of overall magnetic ground state energies, and leads to tunable magnetic topological orders. Our work provides a clear pathway for nanoscale defect-engineering towards the realization of topological quantum phases.

cond-mat.mtrl-sci↗