arXiv subjects

Chaoxing Liu

Publications and source records attributed to Chaoxing Liu.

At least 19 recordsLinked to original sources

arXiv2026

High-resolution angle-resolved photoemission spectroscopy with tunable magnetic field

The control and perturbation of quantum phenomena with magnetic fields is an indispensable tool in materials research. Recently, in-situ field tuning was implemented into angle-resolved photoemission spectroscopy (magneto-ARPES), which provides direct momentum and energy-resolved information of the field-dependent electronic structure. However, aberrations of the electron trajectories were shown to be substantial, leading to significant spectral distortions and broadening even in small fields. Here we show that the electronic structure can be recovered from magneto-ARPES spectra with high accuracy while maintaining high momentum resolution even when strong trajectory aberrations are present. We studied Bi$_2$Se$_3$ in a dipole field of a coil using a laser-based ARPES system. The electronic structure was reconstructed in post-processing using detailed electron trajectory simulations. We identify two-dimensional (2D) momentum mapping, a micron beam spot size, and precise numerical field simulations as critical technical requirements for high-resolution magneto-ARPES. We show how circular dichroism can provide additional information about the coupling of the magnetic field to the spin. The experimental achievements and the scaling laws from our simulations provide a road map towards magneto-ARPES in larger fields.

cond-mat.str-el↗

arXiv2026

Efficiently gate-tunable ferromagnetism in ferromagnetic semiconductor-Dirac semimetal p-n heterojunctions

We use molecular beam epitaxy to develop a gate tunable p-n heterojunction that interfaces a canonical Dirac semimetal, Cd$_3$As$_2$, and a ferromagnetic semiconductor, In$_{1-x}$Mn$_x$As, with perpendicular magnetic anisotropy. Measurements of the anomalous Hall effect in top-gated Cd$_3$As$_2$/In$_{1-x}$Mn$_x$As devices show that the ferromagnetic Curie temperature ($T_\mathrm{C}$) can be efficiently tuned using a modest gate voltage of $\sim 10$ V, corresponding to a sensitivity to electric field ($E$) of $\Delta T_{\mathrm{C}}/\Delta E \sim 10$ K/MV/cm). The voltage tuning of $T_\mathrm{C}$ saturates near the charge neutrality point of Cd$_3$As$_2$ and vanishes at positive gate voltage in appropriately designed heterostructures. This non-monotonic behavior cannot be explained solely by hole-mediated ferromagnetism in the In$_{1-x}$Mn$_x$As alone, suggesting an interaction between the Dirac semimetal and the ferromagnetic semiconductor. Our results identify Cd$_3$As$_2$/In$_{1-x}$Mn$_x$As heterojunctions as a potentially attractive platform for studying emergent phenomena arising from the interplay between broken symmetry, topology, and magnetism in a topological semimetal.

cond-mat.mes-hall↗

arXiv2025

Discovery of a Highly Anisotropic Type-II Ferromagnetic Weyl State Exhibiting a 3D Quantum Hall Effect

Topological semimetals, particularly Weyl semimetals (WSMs), are crucial platforms for exploring emergent quantum phenomena due to their unique electronic structures and potential to transition into various topological phases. In this study, we report the discovery of a ferromagnetic (FM) type-II WSM in Mn(Bi1-xSbx)4Te7, which exhibits a remarkable three-dimensional (3D) quantum Hall effect (QHE). By precisely tuning the chemical potential through Sb doping, we obtained samples with the Fermi level near the charge neutrality point for x = ~ 0.27. This was confirmed by spectroscopy measurements (ARPES and STS), and these samples showed strong quantum oscillations along with a key transport signature of a Weyl state - chiral anomaly, and Fermi surface reconstruction driven by FM ordering. Our theoretical analysis indicates that this Weyl state evolves from a parent nodal ring state, where higher-order k-terms split the nodal line into type-II Weyl nodes. The Weyl state exhibits significant anisotropy, characterized by a pronounced reduction in Fermi velocity along the kz-axis, likely accounting for the observed 3D QHE. These results not only highlight the exceptional tunability of the Mn(Bi1-xSbx)4Te7 system, where precise control of the chemical potential and magnetic properties opens access to novel quantum phases, but also advance the understanding of FM WSMs.

cond-mat.mtrl-sci↗

arXiv2024

Distinguishing Surface and Bulk Electromagnetism via Their Dynamics in an Intrinsic Magnetic Topological Insulator

The indirect exchange interaction between local magnetic moments via surface electrons has been long predicted to bolster the surface ferromagnetism in magnetic topological insulators (MTIs), which facilitates the quantum anomalous Hall effect. This unconventional effect is critical to determining the operating temperatures of future topotronic devices. However, the experimental confirmation of this mechanism remains elusive, especially in intrinsic MTIs. Here we combine time-resolved photoemission spectroscopy with time-resolved magneto-optical Kerr effect measurements to elucidate the unique electromagnetism at the surface of an intrinsic MTI MnBi2Te4. Theoretical modeling based on 2D Ruderman-Kittel-Kasuya-Yosida interactions captures the initial quenching of a surface-rooted exchange gap within a factor of two but over-estimates the bulk demagnetization by one order of magnitude. This mechanism directly explains the sizable gap in the quasi-2D electronic state and the nonzero residual magnetization in even-layer MnBi2Te4. Furthermore, it leads to efficient light-induced demagnetization comparable to state-of-the-art magnetophotonic crystals, promising an effective manipulation of magnetism and topological orders for future topotronics.

cond-mat.str-el↗

arXiv2024

Topological Heavy Fermion Principle For Flat (Narrow) Bands With Concentrated Quantum Geometry

We propose a general principle for the low-energy theory of narrow bands with concentrated Berry curvature and Fubini-Study metric in the form of a map to Anderson-"+" models composed of heavy fermions hybridizing and interacting with semi-metallic modes. This map resolves the obstruction preventing topological bands from being realized in a local Hamiltonian acting on the low-energy degrees of freedom. The concentrated quantum geometry is reproduced through band inversion with a dispersive semi-metal, leaving a nearly flat, trivial band which becomes the heavy fermion. This representation is natural when the narrow band is not energetically isolated on the scale of the interaction and an enlarged Hilbert space is inescapable, but also provides analytical insight into the projected-interaction limit. First exemplified in twisted bilayer graphene (TBG), we extend it to (1) the twisted checkerboard, which we find has a chiral symmetric stable anomaly that forbids a lattice realization at all energies, and (2) the Lieb lattice with gapless flat bands, where we show the heavy fermions can be obtained by minimizing a Euclidean instanton action to saturate its BPS bound. The heavy fermion approach is widely applicable and physically transparent: heavy electrons carry the strong correlations and dispersive electrons carry the topology. This simple picture unifies the dichotomous phenomena observed in TBG and points to connections between moir\'e and stoichiometric materials.

cond-mat.str-el↗

arXiv2024

Rashba spin splitting-induced topological Hall effect in a Dirac semimetal-ferromagnetic semiconductor heterostructure

We use a concerted theory-experiment effort to investigate the formation of chiral real space spin texture when the archetypal Dirac semimetal Cd$_3$As$_2$ is interfaced with In$_{1-x}$Mn$_x$As, a ferromagnetic semiconductor with perpendicular magnetic anisotropy. Our calculations reveal a nonzero off-diagonal spin susceptibility in the Cd$_3$As$_2$ layer due to the Rashba spin-orbit coupling from broken inversion symmetry. This implies the presence of a Dzyaloshinskii-Moriya interaction between local moments in the In$_{1-x}$Mn$_x$As layer, mediated by Dirac electrons in the vicinal Cd$_3$As$_2$ layer, potentially creating the conditions for a real space chiral spin texture. Using electrical magnetoresistance measurements at low temperature, we observe an emergent excess contribution to the transverse magneto-resistance whose behavior is consistent with a topological Hall effect arising from the formation of an interfacial chiral spin texture. This excess Hall voltage varies with gate voltage, indicating a promising electrostatically-tunable platform for understanding the interplay between the helical momentum space states of a Dirac semimetal and chiral real space spin textures in a ferromagnet.

cond-mat.mes-hall↗

arXiv2023

Towards a Topological Classification of Nonadiabaticity in Chemical Reactions

The application of topology, a branch of mathematics, to the study of electronic states in crystalline materials has had a revolutionary impact on the field of condensed matter physics. For example, the development of topological band theory has delivered new approaches and tools to characterize the electronic structure of materials, resulting in the discovery of new phases of matter with exotic properties. In the framework of topological band theory, the crossings between energy levels of electrons are characterized by topological invariants, which predict the presence of topological boundary states. Given the frequency of energy level crossings on the potential energy surface in molecules, the applicability of these concepts to molecular systems could be of great interest for our understanding of reaction dynamics. However, challenges arise due to differing quantum mechanical descriptions of solids and molecules. Out work aims to bridge the gap between topological band theory and molecular chemistry. We propose that the Euler Class, a topological invariant, can be used to categorize and analyse the distribution of nonadiabatic couplings on the potential energy surface. To exemplify this connection, we introduce a model system with two distinct regimes that are characterized by different values of the Euler Class, yet identical potential energy surfaces. Contrary to expectations set by the Born-Oppenheimer approximation, we propose that these two regimes don't exhibit identical dynamics, due to a qualitatively distinct distribution of nonadiabatic couplings.

cond-mat.mtrl-sci↗

arXiv2023

Strong Inter-valley Electron-Phonon Coupling in Magic-Angle Twisted Bilayer Graphene

The unusual properties of superconductivity in magic-angle twisted bilayer graphene (MATBG) have sparked enormous research interest. However, despite the dedication of intensive experimental efforts and the proposal of several possible pairing mechanisms, the origin of its superconductivity remains elusive. Here, utilizing angle-resolved photoemission spectroscopy with micrometer spatial resolution, we have revealed flat band replicas in superconducting MATBG, where MATBG is unaligned with its hexagonal boron nitride (hBN) substrate11. These replicas exhibit uniform energy spacing, approximately 150 +- 15 meV apart, indicative of strong electron-boson coupling. Strikingly, these replicas are absent in non-superconducting twisted bilayer graphene (TBG) systems, either when MATBG is aligned to hBN or when TBG deviates from the magic angle. Calculations suggest that the formation of these flat band replicas in superconducting MATBG are attributed to the strong coupling between flat band electrons and an optical phonon mode at the graphene K point, facilitated by inter-valley scattering. These findings, although do not necessarily put electron phonon coupling as the main driving force for the superconductivity in MATBG, unravel the unique electronic structure inherent in superconducting MATBG, thereby providing crucial information for understanding the unusual electronic landscape from which the superconductivity is derived.

cond-mat.mes-hall↗

arXiv2023

Layer-by-layer disentanglement of Bloch states via frequency-domain photoemission

Layer-by-layer material engineering has enabled exotic quantum phenomena such as interfacial superconductivity and the quantum anomalous Hall effect. Meanwhile, deciphering electronic states layer-by-layer remains a fundamental scientific challenge. This is exemplified by the difficulty in understanding the layer origins of topological electronic states in magnetic topological insulators, which is key to understanding and controlling topological quantum phases. Here, we report a layer-encoded frequency-domain ARPES experiment on a magnetic topological insulator (MnBi2Te4)(Bi2Te3) to characterize the layer origins of electronic states. Infrared laser excitations launch coherent lattice vibrations with the layer index encoded by the vibration frequency; photoemission spectroscopy tracks the electron dynamics, where the layer information is decoded in the frequency domain. This layer-frequency correspondence reveals a surprising wavefunction relocation of the topological surface state from the top magnetic layer into the buried second layer, reconciling the controversy over the vanishing broken-symmetry energy gap in (MnBi2Te4)(Bi2Te3) and its related compounds. The layer-frequency correspondence can be harnessed to disentangle electronic states layer-by-layer in a broad class of van der Waals superlattices.

cond-mat.mes-hall↗

arXiv2022

Strong Room-Temperature Bulk Nonlinear Hall Effect in a Spin-Valley Locked Dirac Material

Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe4. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb2 can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device's functionality in wireless microwave detection and frequency doubling. These findings broaden the coupled spin and valley physics from 2D systems into a 3D system and lay a foundation for exploring bulk NLHE's applications.

cond-mat.mes-hall↗

arXiv2022

Quasi-symmetry protected topology in a semi-metal

The crystal symmetry of a material dictates the type of topological band structures it may host, and therefore symmetry is the guiding principle to find topological materials. Here we introduce an alternative guiding principle, which we call 'quasi-symmetry'. This is the situation where a Hamiltonian has an exact symmetry at lower-order that is broken by higher-order perturbation terms. This enforces finite but parametrically small gaps at some low-symmetry points in momentum space. Untethered from the restraints of symmetry, quasi-symmetries eliminate the need for fine-tuning as they enforce that sources of large Berry curvature will occur at arbitrary chemical potentials. We demonstrate that a quasi-symmetry in the semi-metal CoSi stabilizes gaps below 2 meV over a large near-degenerate plane that can be measured in the quantum oscillation spectrum. The application of in-plane strain breaks the crystal symmetry and gaps the degenerate point, observable by new magnetic breakdown orbits. The quasi-symmetry, however, does not depend on spatial symmetries and hence transmission remains fully coherent. These results demonstrate a class of topological materials with increased resilience to perturbations such as strain-induced crystalline symmetry breaking, which may lead to robust topological applications as well as unexpected topology beyond the usual space group classifications.

cond-mat.mtrl-sci↗

arXiv2022

Large-Area Intercalated 2D-Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torque

A scalable platform to synthesize ultrathin heavy metals may enable high efficiency charge-to-spin conversion for next-generation spintronics. Here we report the synthesis of air-stable, epitaxially registered monolayer Pb underneath bilayer graphene on SiC (0001) by confinement heteroepitaxy (CHet). Diffraction, spectroscopy, and microscopy reveal CHet-based Pb intercalation predominantly exhibits a mottled hexagonal superstructure due to an ordered network of Frenkel-Kontorova-like domain walls. The system's air stability enables ex-situ spin torque ferromagnetic resonance (ST-FMR) measurements that demonstrate charge-to-spin conversion in graphene/Pb/ferromagnet heterostructures with a 1.5x increase in the effective field ratio compared to control samples.

cond-mat.mtrl-sci↗

arXiv2021

ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.

cond-mat.mtrl-sci↗

arXiv2021

Origins of electronic bands in antiferromagnetic topological insulator MnBi$_2$Te$_4$

Despite the rapid progress in understanding the first intrinsic magnetic topological insulator MnBi$_2$Te$_4$, its electronic structure remains a topic under debates. Here we perform a thorough spectroscopic investigation into the electronic structure of MnBi$_2$Te$_4$ via laser-based angle-resolved photoemission spectroscopy. Through quantitative analysis, we estimate an upper bound of 3 meV for the gap size of the topological surface state. Furthermore, our circular dichroism measurements reveal band chiralities for both the topological surface state and quasi-2D bands, which can be well reproduced in a band hybridization model. A numerical simulation of energy-momentum dispersions based on a four-band model with an additional step potential near the surface provides a promising explanation for the origin of the quasi-2D bands. Our study represents a solid step forward in reconciling the existing controversies in the electronic structure of MnBi$_2$Te$_4$, and provides an important framework to understand the electronic structures of other relevant topological materials MnBi$_{2n}$Te$_{3n+1}$.

cond-mat.mtrl-sci↗

arXiv2020

Interface-Induced Sign Reversal of the Anomalous Hall Effect in Magnetic Topological Insulator Heterostructures

The Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as a consequence of non-zero Berry curvature in momentum space. The realization of the quantum anomalous Hall effect provided conclusive evidence for the intrinsic mechanism of the AH effect in magnetic topological insulators (TIs). Here we fabricated magnetic TI/TI heterostructures and found both the magnitude and sign of the AH effect in the magnetic TI layer can be altered by tuning the TI thickness and/or the electric gate voltage. The sign change of the AH effect with increasing TI thickness is attributed to the charge transfer across the TI and magnetic TI layers, consistent with first-principles calculations. By fabricating the magnetic TI/TI/magnetic TI sandwich heterostructures with different dopants, we created an artificial topological Hall (TH) effect-like feature in Hall traces. This artificial TH effect is induced by the superposition of two AH effects with opposite signs instead of the formation of chiral spin textures in the samples. Our study provides a new route to engineer the Berry curvature in magnetic topological materials that may lead to potential technological applications.

cond-mat.mes-hall↗

arXiv2020

Concurrence of Quantum Anomalous Hall and Topological Hall Effects in Magnetic Topological Insulator Sandwich Heterostructures

The quantum anomalous Hall (QAH) effect is a quintessential consequence of non-zero Berry curvature in momentum-space. The QAH insulator harbors dissipation-free chiral edge states in the absence of an external magnetic field. On the other hand, the topological Hall (TH) effect, a transport hallmark of the chiral spin textures, is a consequence of real-space Berry curvature. While both the QAH and TH effects have been reported separately, their coexistence, a manifestation of entangled chiral edge states and chiral spin textures, has not been reported. Here, by inserting a TI layer between two magnetic TI layers to form a sandwich heterostructure, we realized a concurrence of the TH effect and the QAH effect through electric field gating. The TH effect is probed by bulk carriers, while the QAH effect is characterized by chiral edge states. The appearance of TH effect in the QAH insulating regime is the consequence of chiral magnetic domain walls that result from the gate-induced Dzyaloshinskii-Moriya interaction and occur during the magnetization reversal process in the magnetic TI sandwich samples. The coexistence of chiral edge states and chiral spin textures potentially provides a unique platform for proof-of-concept dissipationless spin-textured spintronic applications.

cond-mat.mes-hall↗

arXiv2019

Observation of Interfacial Antiferromagnetic Coupling between Magnetic Topological Insulator and Antiferromagnetic Insulator

Inducing magnetic orders in a topological insulator (TI) to break its time reversal symmetry has been predicted to reveal many exotic topological quantum phenomena. The manipulation of magnetic orders in a TI layer can play a key role in harnessing these quantum phenomena towards technological applications. Here we fabricated a thin magnetic TI film on an antiferromagnetic (AFM) insulator Cr2O3 layer and found that the magnetic moments of the magnetic TI layer and the surface spins of the Cr2O3 layers favor interfacial AFM coupling. Field cooling studies show a crossover from negative to positive exchange bias clarifying the competition between the interfacial AFM coupling energy and the Zeeman energy in the AFM insulator layer. The interfacial exchange coupling also enhances the Curie temperature of the magnetic TI layer. The unique interfacial AFM alignment in magnetic TI on AFM insulator heterostructures opens a new route toward manipulating the interplay between topological states and magnetic orders in spin-engineered heterostructures, facilitating the exploration of proof-of-concept TI-based spintronic and electronic devices with multi-functionality and low power consumption.

cond-mat.mtrl-sci↗

arXiv2018

A valley valve and electron beam splitter

Developing alternative paradigms of electronics beyond silicon technology requires the exploration of fundamentally new physical mechanisms, such as the valley specific phenomena in hexagonal two-dimensional materials. We realize ballistic valley Hall kink states in bilayer graphene and demonstrate gate-controlled current transmission in a four-kink router device. The operations of a waveguide, a valve and a tunable electron beam splitter are demonstrated. The valley valve exploits the valley-momentum locking of the kink states and reaches an on/off ratio of 8 at zero magnetic field. A magnetic field enables a full-ranged tunable coherent beam splitter. These results pave the path to building a scalable, coherent quantum transportation network based on the kink states.

cond-mat.mes-hall↗