arXiv subjects

Chaoxing Liu

Publications and source records attributed to Chaoxing Liu.

30 records · Page 2Linked to original sources

arXiv2018

Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures

The Dirac electrons occupying the surface states (SSs) of topological insulators (TIs) have been predicted to exhibit many exciting magneto-transport phenomena. Here we report on the first experimental observation of an unconventional planar Hall effect (PHE) and an electrically gate-tunable hysteretic planar magnetoresistance (PMR) in EuS/TI heterostructures, in which EuS is a ferromagnetic insulator (FMI) with an in-plane magnetization. In such exchange-coupled FMI/TI heterostructures, we find a significant (suppressed) PHE when the in-plane magnetic field is parallel (perpendicular) to the electric current. This behavior differs from previous observations of the PHE in ferromagnets and semiconductors. Furthermore, as the thickness of the 3D TI films is reduced into the 2D limit, in which the Dirac SSs develop a hybridization gap, we find a suppression of the PHE around the charge neutral point indicating the vital role of Dirac SSs in this phenomenon. To explain our findings, we outline a symmetry argument that excludes linear-Hall mechanisms and suggest two possible non-linear Hall mechanisms that can account for all the essential qualitative features in our observations.

cond-mat.mes-hall↗

arXiv2018

Realization of the Axion Insulator State in Quantum Anomalous Hall Sandwich Heterostructures

The 'magnetoelectric effect' arises from the coupling between magnetic and electric properties in materials. The Z2 invariant of topological insulators (TIs) leads to a quantized version of this phenomenon, known as the topological magnetoelectric (TME) effect. This effect can be realized in a new topological phase called an 'axion insulator' whose surface states are all gapped but the interior still obeys time reversal symmetry. We demonstrate such a phase using electrical transport measurements in a quantum anomalous Hall (QAH) sandwich heterostructure, in which two compositionally different magnetic TI layers are separated by an undoped TI layer. Magnetic force microscopy images of the same sample reveal sequential magnetization reversals of the top and bottom layers at different coercive fields, a consequence of the weak interlayer exchange coupling due to the spacer. When the magnetization is antiparallel, both the Hall resistance and Hall conductance show zero plateaus, accompanied by a large longitudinal resistance and vanishing longitudinal conductance, indicating the realization of an axion insulator state. Our findings thus show evidences for a phase of matter distinct from the established QAH state and provide a promising platform for the realization of the TME effect.

cond-mat.mes-hall↗

arXiv2017

Direct imaging of electron transfer and its influence on superconducting pairing at FeSe/SrTiO3 interface

The exact mechanism responsible for the tenfold enhancement of superconducting transition temperature (Tc) in a monolayer iron selenide (FeSe) on SrTiO3(STO) substrate over that of bulk FeSe, is an open issue. We present here a coordinated study of electrical transport and low temperature electron energy-loss spectroscopy (EELS) measurements on FeSe/STO films of various thicknesses. Our EELS mapping across the FeSe/STO interface shows direct evidence of band-bending caused by electrons transferred from STO to FeSe layer. The transferred electrons were found to accumulate only within the first two atomic layers of FeSe films near the STO substrate. Our transport results found a positive backgate applied from STO is particularly effective in enhancing Tc of the films while minimally changing the carrier density. We suggest that the positive backgate tends to 'pull' the transferred electrons in FeSe films closer to the interface and thus further enhances both their coupling to interfacial phonons and the electron-electron interaction within FeSe films, thus leading to a huge enhancement of Tc in FeSe films.

cond-mat.supr-con↗

arXiv2016

Observation of the quantum-anomalous-Hall insulator to Anderson insulator quantum phase transition and its scaling behavior

Fundamental insight into the nature of the quantum phase transition from a superconductor to an insulator in two dimensions, or from one plateau to the next or to an insulator in quantum Hall effect, has been revealed through the study of its scaling behavior. Here, we report on the experimental observation of a quantum phase transition from a quantum-anomalous-Hall (QAH) insulator to an Anderson insulator in a magnetic topological insulator by tuning the chemical potential. Our experiment demonstrates the existence of scaling behavior from which we extract the critical exponent for this quantum phase transition. We expect that our work will motivate much further investigation of many properties of quantum phase transition in this new context.

cond-mat.mes-hall↗

arXiv2016

Direct observation of local Rashba spin polarization and spin-layer locking in centrosymmetric monolayer PtSe$_2$

The generally accepted view that spin polarization is induced by the asymmetry of the global crystal space group has limited the search for spintronics [1] materials to non-centrosymmetric materials. Recently it has been suggested that spin polarization originates fundamentally from local atomic site asymmetries [2], and therefore centrosymmetric materials may exhibit previously overlooked spin polarizations. Here by using spin- and angle-resolved photoemission spectroscopy (spin-ARPES), we report helical spin texture induced by local Rashba effect (R-2) in centrosymmetric monolayer PtSe$_2$ film. First-principles calculations and effective analytical model support the spin-layer locking picture: in contrast to the spin splitting in conventional Rashba effect (R-1), the opposite spin polarizations induced by R-2 are degenerate in energy while spatially separated in the top and bottom Se layers. These results not only enrich our understanding of spin polarization physics, but also may find applications in electrically tunable spintronics.

cond-mat.mtrl-sci↗

arXiv2015

Zero-field dissipationless chiral edge transport and the nature of dissipation in the quantum anomalous Hall state

The quantum anomalous Hall (QAH) effect is predicted to possess, at zero magnetic field, chiral edge channels that conduct spin polarized current without dissipation. While edge channels have been observed in previous experimental studies of the QAH effect, their dissipationless nature at a zero magnetic field has not been convincingly demonstrated. By a comprehensive experimental study of the gate and temperature dependences of local and nonlocal magnetoresistance, we unambiguously establish the dissipationless edge transport. By studying the onset of dissipation, we also identify the origin of dissipative channels and clarify the surprising observation that the critical temperature of the QAH effect is two orders of magnitude smaller than the Curie temperature of ferromagnetism.

cond-mat.mes-hall↗

arXiv2015

High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon as the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism.Here we report the experimental observation of the QAH state in V-doped (Bi,Sb)2Te3 films with the zero-field longitudinal resistance down to 0.00013+-0.00007h/e2 (~3.35+-1.76 ohm), Hall conductance reaching 0.9998+-0.0006e2/h and the Hall angle becoming as high as 89.993+-0.004degree at T=25mK. Further advantage of this system comes from the fact that it is a hard ferromagnet with a large coercive field (Hc>1.0T) and a relative high Curie temperature. This realization of robust QAH state in hard FMTIs is a major step towards dissipationless electronic applications without external fields.

cond-mat.mtrl-sci↗

arXiv2014

Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms

With angle-resolved photoemission spectroscopy, gap-opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which however show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron doping level. Scanning tunneling microscopy and first principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in Bi2Se3 matrix, which contribute to the observed chemical potential dependent gap-opening in the Dirac surface states without long-range ferromagnetic order.

cond-mat.mtrl-sci↗

arXiv2013

Weak Topological Insulators in PbTe/SnTe Superlattices

It is desirable to realize topological phases in artificial structures by engineering electronic band structures. In this paper, we investigate $(PbTe)_m(SnTe)_{2n-m}$ superlattices along [001] direction and find a robust weak topological insulator phase for a large variety of layer numbers m and 2n-m. We confirm this topologically non-trivial phase by calculating Z2 topological invariants and topological surface states based on the first-principles calculations. We show that the folding of Brillouin zone due to the superlattice structure plays an essential role in inducing topologically non-trivial phases in this system. This mechanism can be generalized to other systems in which band inversion occurs at multiple momenta, and gives us a brand-new way to engineer topological materials in artificial structures.

cond-mat.mtrl-sci↗

arXiv2013

Plasmon modes in the magnetically doped Single Layer and Multilayers of Helical Metals

We study the plasmon excitations and the electromagnetic response of the magnetically doped single layer and multilayer of ``helical metals'', which emerge at the surfaces of topological insulators. For the single layer case, we find a ``spin-plasmon'' mode with the rotating spin texture due to the combination of the spin-momentum locking of ``helical metals'' and the Hall response from magnetization. For the multilayers case, we investigate the electromagnetic response due to the plasmon excitations, including the Faraday rotation for the light propagating normal to the helical metal layers and an additional optical mode with the frequency within the conventional plasmon gap for the light propagating along the helical metal layers.

cond-mat.mes-hall↗

arXiv2009

Kondo effect in the helical edge liquid of the quantum spin Hall state

Following the recent observation of the quantum spin Hall (QSH) effect in HgTe quantum wells, an important issue is to understand the effect of impurities on transport in the QSH regime. Using linear response and renormalization group methods, we calculate the edge conductance of a QSH insulator as a function of temperature in the presence of a magnetic impurity. At high temperatures, Kondo and/or two-particle scattering give rise to a logarithmic temperature dependence. At low temperatures, for weak Coulomb interactions in the edge liquid the conductance is restored to unitarity with unusual power-laws characteristic of a `local helical liquid', while for strong interactions transport proceeds by weak tunneling through the impurity where only half an electron charge is transferred in each tunneling event.

cond-mat.mes-hall↗

arXiv2008

Quantum Spin Hall Effect in Inverted Type II Semiconductors

The quantum spin Hall (QSH) state is a topologically non-trivial state of quantum matter which preserves time-reversal symmetry; it has an energy gap in the bulk, but topologically robust gapless states at the edge. Recently, this novel effect has been predicted and observed in HgTe quantum wells. In this work we predict a similar effect arising in Type-II semiconductor quantum wells made from InAs/GaSb/AlSb. Because of a rare band alignment the quantum well band structure exhibits an "inverted" phase similar to CdTe/HgTe quantum wells, which is a QSH state when the Fermi level lies inside the gap. Due to the asymmetric structure of this quantum well, the effects of inversion symmetry breaking and inter-layer charge transfer are essential. By standard self-consistent calculations, we show that the QSH state persists when these corrections are included, and a quantum phase transition between the normal insulator and the QSH phase can be electrically tuned by the gate voltage.

cond-mat.mes-hall↗