arXiv subjects

Cheng Gong

Publications and source records attributed to Cheng Gong.

76 records · Page 5Linked to original sources

arXiv2017

Near-threshold photoelectron holography beyond the strong-field approximation

We study photoelectron angular distributions (PADs) near the ionization threshold with a newly developed Coulomb quantum-orbit strong-field approximation (CQSFA) theory. The CQSFA simulations present an excellent agreement with the result from time-dependent Schrödinger equation method. We show that the low-energy fan-shaped structure in the PADs corresponds to a subcycle time-resolved holographic structure and stems from the significant influence of the Coulomb potential on the phase of the forward-scattering electron trajectories, which affects different momenta and scattering angles unequally. For the first time, our work provides a direct explanation of how the fan-shaped structure is formed, based on the quantum interference of direct and forward-scattered orbits.

physics.atom-ph↗

arXiv2015

Weighted Orthogonal Polynomials-Based Generalization of Wirtinger-Type Integral Inequalities for Delayed Continuous-Time Systems

In the past three years, many researchers have proven and/or employed some Wirtinger-type integral inequalities to establish less conservative stability criteria for delayed continu\-ous-time systems. In this present paper, we will investigate weighted orthogonal polynomials-based integral inequalities which is a generalization of the existing Jensen's inequalities and Wirtinger-type integral inequalities.

math.OC↗

arXiv2013

Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors

Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalcogenides (TMDs) with sizable band gaps show promise in building p-n junctions (couples) for TFET applications. Band alignment information is essential for realizing broken gap junctions with excellent electron tunneling efficiencies. Promising couples composed of monolayer TMDs are suggested to be VIB-MeX2 (Me= W, Mo; X= Te, Se) as the n-type source and IVB-MeX2 (Me = Zr, Hf; X= S, Se) as the p-type drain by density functional theory calculations.

cond-mat.mtrl-sci↗

arXiv2011

Field emission from atomically thin edges of reduced graphene oxide

Point sources exhibit low threshold electron emission due to local field enhancement at the tip. The development and implementation of tip emitters have been hampered by the need to position them sufficiently apart to achieve field enhancement, limiting the number of emission sites and therefore the overall current. Here we report low threshold field (< 0.1V/um) emission of multiple electron beams from atomically thin edges of reduced graphene oxide (rGO). Field emission microscopy (FEM) measurements show evidence for interference from emission sites that are separated by a few nanometers, suggesting that the emitted electron beams may be coherent. Based on our high-resolution transmission electron microscopy, infrared spectroscopy and simulation results, field emission from the rGO edge is attributed to a stable and unique aggregation of oxygen groups in the form of cyclic edge ethers. Such closely spaced electron beams from rGO offer prospects for novel applications and understanding the physics of linear electron sources.

cond-mat.mtrl-sci↗