arXiv subjects

Chih-Kang Shih

Publications and source records attributed to Chih-Kang Shih.

At least 37 records · Page 2Linked to original sources

arXiv2021

Influence of nano-hole defects and their geometric arrangements on the superfluid density in atomically thin single crystals of indium superconductor

Using Indium on Si(111) as an atomically thin superconductor platform, and by systematically controlling the density of nano-hole defects (nanometer size voids), we reveal the impacts of defects density and defects geometric arrangements on superconductivity at macroscopic and microscopic length scales. When nano-hole defects are uniformly dispersed in the atomic layer, the superfluid density monotonically decreases as a function of defect density (from 0.7% to 5% of the surface area) with minor change in the transition temperature Tc, measured both microscopically and macroscopically. With a slight increase in the defect density from 5% to 6%, these point defects are organized into defect chains that enclose individual two-dimensional patches. This new geometric arrangement of defects dramatically impacts the superconductivity, leading to the total disappearance of macroscopic superfluid density and the collapse of the microscopic superconducting gap. This study sheds new light on the understanding of how local defects and their geometric arrangement impact superconductivity in the two-dimensional limit.

cond-mat.supr-con↗

arXiv2021

PTCDA molecular monolayer on Pb thin films: An unusual π-electron Kondo system and its interplay with a quantum-confined superconductor

The hybridization of magnetism and superconductivity has been an intriguing playground for correlated electron systems, hosting various novel physical phenomena. Usually, localized d- or f-electrons are central to magnetism. In this study, by placing a PTCDA (3,4,9,10-perylene tetracarboxylic dianhydride) molecular monolayer on ultra-thin Pb films, we built a hybrid magnetism/superconductivity (M/SC) system consisting of only sp electronic levels. The magnetic moments reside in the unpaired molecular orbital originating from interfacial charge-transfers. We reported distinctive tunneling spectroscopic features of such a Kondo screened pi-electron impurity lattice on a superconductor in the regime of TK>>delta suggesting the formation of a two-dimensional bound states band. Moreover, moiré superlattices with tunable twist angle and the quantum confinement in the ultra-thin Pb films provide easy and flexible implementations to tune the interplay between the Kondo physics and the superconductivity, which are rarely present in M/SC hybrid systems.

cond-mat.supr-con↗

arXiv2021

Monolayer 1T-NbSe2 as a 2D correlated magnetic insulator

Monolayer group-V transition metal dichalcogenides in their 1T phase have recently emerged as a platform to investigate rich phases of matter, such as spin liquid and ferromagnetism, resulting from strong electron correlations. Although 1T phase NbSe2 does not occur naturally in bulk form, it has been discovered that the 1T and 1H phases can coexist when monolayer NbSe2 is grown via molecular beam epitaxy (MBE). This discovery has inspired theoretical investigations predicting collective phenomena such as ferromagnetism in two dimensions. Here, by controlling the MBE growth parameters, we demonstrate the successful growth of single-phase 1T-NbSe2. By combining scanning tunneling microscopy/spectroscopy and ab initio calculations, we show that this system is a charge-transfer insulator, with the upper Hubbard band located above the valence band maximum. Furthermore, by creating a vertical 1T/2H NbSe2 heterostructure, we find evidence of exchange interactions between the localized magnetic moments in 1T phase and the metallic/superconducting phase, as manifested by Kondo resonances and Yu-Shiba-Rusinov bound states.

cond-mat.str-el↗

arXiv2020

Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS2

The emergence of transition metal dichalcogenides (TMD) as crystalline atomically thin semiconductors has created a tremendous amount of scientific and technological interest. Many novel device concepts have been proposed and realized (1-3). Nonetheless, progress in k-space investigations of ground/excited state electronic structures has been slow due to the challenge to create large scale, laterally homogeneous samples. Taking advantage of recent advancements in chemical vapor deposition, here we create a wafer-size MoS2 monolayer with well-aligned lateral orientation for advanced electron spectroscopy studies (4-6). Low energy electron diffraction and scanning tunneling microscopy (STM) demonstrate atomically clean surfaces with in-plane crystalline orientation. The ground state and excited state electronic structures are probed using scanning tunneling spectroscopy (STS), angle-resolved photoemission (ARPES) and time-resolved (tr-)ARPES. In addition to mapping out the momentum-space quasiparticle band structure in the valence and conduction bands, we unveil ultrafast excited state dynamics, including inter- and intra-valley carrier scattering and a rapid downward energy shift by ~ 0.2eV lower than the initial free carrier state at Sigma point.

cond-mat.mes-hall↗

arXiv2020

Critical role of parallel momentum in quantum well state couplings in multi-stacked nanofilms: an angle resolved photoemission study

We use angle resolved photoemission spectroscopy (ARPES) to investigate the coupling of electron quantum well states (QWS) in epitaxial thin Pb and Ag films. More specifically, we investigate the Ag/Si, Pb/Si, and Pb/Ag/Si systems. We found that the parallel momentum plays a very profound role determining how two adjacent quantum wells are coupled electronically across the interface. We revealed that in the Pb/Ag bimetallic system, there exist two distinctly different regimes in the energy versus momentum (E vs. k) space. In one regime the electronic states in Ag and Pb are strongly coupled resulting in a new set of quantum well states for the bi-metallic system. In the other regime the electronic states in individual metallic layers are retained in their respective regions, as if they are totally decoupled. This result is corroborated by calculations using density functional theory. We further unravel the underlying mechanism associated with the electron refraction and total internal reflection across the interface.

cond-mat.mes-hall↗

arXiv2020

Phonon Renormalization in Reconstructed MoS$_2$ Moiré Superlattices

In moiré crystals formed by stacking van der Waals (vdW) materials, surprisingly diverse correlated electronic phases and optical properties can be realized by a subtle change in the twist angle. Here, we discover that phonon spectra are also renormalized in MoS$_2$ twisted bilayers, adding a new perspective to moiré physics. Over a range of small twist angles, the phonon spectra evolve rapidly due to ultra-strong coupling between different phonon modes and atomic reconstructions of the moiré pattern. We develop a new low-energy continuum model for phonons that overcomes the outstanding challenge of calculating properties of large moiré supercells and successfully captures essential experimental observations. Remarkably, simple optical spectroscopy experiments can provide information on strain and lattice distortions in moiré crystals with nanometer-size supercells. The newly developed theory promotes a comprehensive and unified understanding of structural, optical, and electronic properties of moiré superlattices.

cond-mat.mes-hall↗

arXiv2020

Epitaxial Growth of Two-dimensional Insulator Monolayer Honeycomb BeO

The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals materials with weak interlayer bonding, which naturally leads to thermodynamically stable monolayers. We report the synthesis of a 2D insulator comprised of a single atomic sheet of honeycomb structure BeO (h-BeO), although its bulk counterpart has a wurtzite structure. The h-BeO is grown by molecular beam epitaxy (MBE) on Ag(111) thin films that are conveniently grown on Si(111) wafers. Using scanning tunneling microscopy and spectroscopy (STM/S), the honeycomb BeO lattice constant is determined to be 2.65 angstrom with an insulating band gap of 6 eV. Our low energy electron diffraction (LEED) measurements indicate that the h-BeO forms a continuous layer with good crystallinity at the millimeter scale. Moiré pattern analysis shows the BeO honeycomb structure maintains long range phase coherence in atomic registry even across Ag steps. We find that the interaction between the h-BeO layer and the Ag(111) substrate is weak by using STS and complimentary density functional theory calculations. We not only demonstrate the feasibility of growing h-BeO monolayers by MBE, but also illustrate that the large-scale growth, weak substrate interactions, and long-range crystallinity make h-BeO an attractive candidate for future technological applications. More significantly, the ability to create a stable single crystalline atomic sheet without a bulk layered counterpart is an intriguing approach to tailoring novel 2D electronic materials.

cond-mat.mes-hall↗

arXiv2020

Unveiling Defect-Mediated Carrier Dynamics in Monolayer Semiconductors by Spatiotemporal Microwave Imaging

The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spatial domain. Here, we report the simultaneous spatial and temporal photoconductivity imaging in two types of WS2 monolayers by laser-illuminated microwave impedance microscopy. The diffusion length and carrier lifetime were directly extracted from the spatial profile and temporal relaxation of microwave signals respectively. Time-resolved experiments indicate that the critical process for photo-excited carriers is the escape of holes from trap states, which prolongs the apparent lifetime of mobile electrons in the conduction band. As a result, counterintuitively, the photoconductivity is stronger in CVD samples than exfoliated monolayers with a lower defect density. Our work reveals the intrinsic time and length scales of electrical response to photo-excitation in van der Waals materials, which is essential for their applications in novel optoelectronic devices.

cond-mat.mes-hall↗

arXiv2019

Moiré Potential Impedes Interlayer Exciton Diffusion in van der Waals Heterostructures

The properties of van der Waals (vdW) heterostructures are drastically altered by a tunable moiré superlattice arising from periodic variations of atomic alignment between the layers. Exciton diffusion represents an important channel of energy transport in semiconducting transition metal dichalcogenides (TMDs). While early studies performed on TMD heterobilayers have suggested that carriers and excitons exhibit long diffusion lengths, a rich variety of scenarios can exist. In a moiré crystal with a large supercell size and deep potential, interlayer excitons may be completely localized. As the moiré period reduces at a larger twist angle, excitons can tunnel between supercells and diffuse over a longer lifetime. The diffusion length should be the longest in commensurate heterostructures where the moiré superlattice is completely absent. In this study, we experimentally demonstrate that the moiré potential impedes interlayer exciton diffusion by comparing a number of WSe2/MoSe2 heterostructures prepared with chemical vapor deposition and mechanical stacking with accurately controlled twist angles. Our results provide critical guidance to developing 'twistronic' devices that explore the moiré superlattice to engineer material properties.

cond-mat.mes-hall↗

arXiv2019

Terahertz Faraday and Kerr rotation spectroscopy of Bi$_{1-x}$Sb$_x$ films in high magnetic fields up to 30 Tesla

We report results of terahertz Faraday and Kerr rotation spectroscopy measurements on thin films of $\text{Bi}_{1-x}\text{Sb}_{x}$, an alloy system that exhibits a semimetal-to-topological-insulator transition as the Sb composition $x$ increases. By using a single-shot time-domain terahertz spectroscopy setup combined with a table-top pulsed mini-coil magnet, we conducted measurements in magnetic fields up to 30~T, observing distinctly different behaviors between semimetallic ($x < 0.07$) and topological insulator ($x > 0.07$) samples. Faraday and Kerr rotation spectra for the semimetallic films showed a pronounced dip that blue-shifted with the magnetic field, whereas spectra for the topological insulator films were positive and featureless, increasing in amplitude with increasing magnetic field and eventually saturating at high fields ($>$20~T). Ellipticity spectra for the semimetallic films showed resonances, whereas the topological insulator films showed no detectable ellipticity. To explain these observations, we developed a theoretical model based on realistic band parameters and the Kubo formula for calculating the optical conductivity of Landau-quantized charge carriers. Our calculations quantitatively reproduced all experimental features, establishing that the Faraday and Kerr signals in the semimetallic films predominantly arise from bulk hole cyclotron resonances while the signals in the topological insulator films represent combined effects of surface carriers originating from multiple electron and hole pockets. These results demonstrate that the use of high magnetic fields in terahertz magnetopolarimetry, combined with detailed electronic structure and conductivity calculations, allows us to unambiguously identify and quantitatively determine unique contributions from different species of carriers of topological and nontopological nature in Bi$_{1-x}$Sb$_x$.

cond-mat.mes-hall↗

arXiv2019

Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment and valley-spin

Excitons in monolayer semiconductors have large optical transition dipole for strong coupling with light field. Interlayer excitons in heterobilayers, with layer separation of electron and hole components, feature large electric dipole that enables strong coupling with electric field and exciton-exciton interaction, at the cost that the optical dipole is substantially quenched (by several orders of magnitude). In this letter, we demonstrate the ability to create a new class of excitons in transition metal dichalcogenide (TMD) hetero- and homo-bilayers that combines the advantages of monolayer- and interlayer-excitons, i.e. featuring both large optical dipole and large electric dipole. These excitons consist of an electron that is well confined in an individual layer, and a hole that is well extended in both layers, realized here through the carrier-species specific layer-hybridization controlled through the interplay of rotational, translational, band offset, and valley-spin degrees of freedom. We observe different species of such layer-hybridized valley excitons in different heterobilayer and homobilayer systems, which can be utilized for realizing strongly interacting excitonic/polaritonic gases, as well as optical quantum coherent controls of bidirectional interlayer carrier transfer either with upper conversion or down conversion in energy.

cond-mat.mes-hall↗

arXiv2018

Atomic-scale tailoring of spin susceptibility via non-magnetic spin-orbit impurities

Following the discovery of topological insulators, there has been a renewed interest in superconducting systems that have strong spin-orbit (SO) coupling. Here we address the fundamental question of how the spin properties of a otherwise spin-singlet superconducting ground state evolve with increasing SO impurity density. We have mapped out the Zeeman critical field phase diagram of superconducting Al films that were deposited over random Pb cluster arrays of varying density. These phase diagrams give a direct measure of the Fermi liquid spin renormalization, as well as the spin orbit scattering rate. We find that the spin renormalization is a linear function of the average Pb cluster-to-cluster separation and that this dependency can be used to tune the spin susceptibility of the Al over a surprisingly wide range from 0.8$χ_0$ to 4.0$χ_0$, where $χ_0$ is the non-interacting Pauli susceptibility.

cond-mat.supr-con↗

arXiv2018

Single Crystalline Silver Films for Plasmonics: From Monolayer to Optically Thick Film

Epitaxial growth of single crystalline noble metals on dielectric substrates has received tremendous attention recently due to their technological potentials as low loss plasmonic materials. Currently there are two different growth approaches, each with its strengths and weaknesses. One adopts a sophisticated molecular beam epitaxial procedure to grow atomically smooth epitaxial Ag films. However, the procedure is rather slow and becomes impractical to grow films with thickness > 50 nm. Another approach adopts a growth process using rapid e-beam deposition which is capable of growing single crystalline Ag films in the thick regime (> 300 nm). However, the rapid growth procedure makes it difficult to control film thickness precisely, i.e., the method is not applicable to growing thin epitaxial films. Here we report a universal approach to grow atomically smooth epitaxial Ag films with precise thickness control from a few monolayers to the optically thick regime, overcoming the limitations of the two aforementioned methods. In addition, we develop an in-situ growth of aluminum oxide as the capping layer which exhibits excellent properties protecting the epitaxial Ag films. The performance of the epitaxial Ag films as a function of the film thickness is investigated by directly measuring the propagation length of the surface plasmon polaritons (SPPs) as well as their device performance to support a waveguide plasmonic nanolaser in infrared incorporating an InGaAsP quantum well as the gain media.

cond-mat.mtrl-sci↗

arXiv2018

Routing Valley Excitons in a Monolayer MoS2 with a Metasurface

Excitons in monolayer transition metal dichalcogenides (TMDs) are formed at K and K' points at the boundary of the Brillouin zone. They acquire a valley degree of freedom, which may be used as a complementary platform for information transport and processing. In a different context, metasurfaces consisting of engineered arrays of polarizable inclusions have enabled the manipulation of light in unprecedented ways, and found applications in imaging, optical information processing, and cloaking. Here, we demonstrate that, by coupling a MoS2 monolayer to a suitably designed metasurface consisting of asymmetric grooves, valley polarized excitons can be sorted and spatially separated even at room temperature. Emission from valley excitons is also separated in K-space, i.e., photons with opposite helicity are emitted to different directions. Our work demonstrates that metasurfaces can facilitate valley transport and establish an interface between valleytronic and photonic devices, thus addressing outstanding challenges in the nascent field of valleytronics.

cond-mat.mes-hall↗

arXiv2017

Tailoring Semiconductor Lateral Multi-junctions for Giant Photoconductivity Enhancement

Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition metal dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor heterostructures either by stacking different TMDs to form vertical heterojunctions or by stitching them laterally to form lateral heterojunctions via direct growth. In conventional semiconductor heterostructures, the design of multi-junctions is critical to achieve carrier confinement. Analogously, we report successful synthesis of monolayer WS2/WS2(1-x)Se2x/WS2 multi-junction lateral heterostructure via direct growth by chemical vapor deposition. The grown structures are characterized by Raman, photoluminescence, and annular dark-field scanning transmission electron microscopy to determine its lateral compositional profile. More importantly, using microwave impedance microscopy, we demonstrate that the local photoconductivity in the alloy region can be tailored and enhanced by 2 orders of magnitude over pure WS2. Finite element analysis confirms that this effect is due to the carrier diffusion and confinement into the alloy region. Our work exemplifies the technological potential of atomically thin lateral heterostructures in optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2017

Zeeman-limited Superconductivity in Crystalline Al Films

We report the evolution of the Zeeman-mediated superconducting phase diagram (PD) in ultra-thin crystalline Al films. Parallel critical field measurements, down to 50 mK, were made across the superconducting tricritical point of films ranging in thickness from 7 ML to 30 ML. The resulting phase boundaries were compared with the quasi-classical theory of a Zeeman-mediated transition between a homogeneous BCS condensate and a spin polarized Fermi liquid. Films thicker than $\sim$20 ML showed good agreement with theory, but thinner films exhibited an anomalous PD that cannot be reconciled within a homogeneous BCS framework.

cond-mat.supr-con↗

arXiv2016

Band gap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

Here we report the successful growth of MoSe2 on single layer hexagonal boron nitride (hBN) on Ru(0001) substrate by using molecular beam epitaxy. We investigated the electronic structures of MoSe2 using scanning tunneling microscopy and spectroscopy. Surprisingly, we found that the quasi-particle gap of the MoSe2 on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We attribute this result to the strong interaction between hBN/Ru which causes residual metallic screening from the substrate. The surface of MoSe2 exhibits Moiré pattern that replicates the Moiré pattern of hBN/Ru. In addition, the electronic structure and the work function of MoSe2 are modulated electrostatically with an amplitude of ~ 0.13 eV. Most interestingly, this electrostatic modulation is spatially in phase with the Moiré pattern of hBN on Ru(0001) whose surface also exhibits a work function modulation of the same amplitude.

cond-mat.mtrl-sci↗

arXiv2016

Interrogating the superconductor Ca10(Pt4As8)(Fe2-xPtxAs2)5 Layer-by-layer

Ever since the discovery of high-Tc superconductivity in layered cuprates, the roles that individual layers play have been debated, due to difficulty in layer-by-layer characterization. While there is similar challenge in many Fe-based layered superconductors, the newly-discovered Ca10(Pt4As8)(Fe2As2)5 provides opportunities to explore superconductivity layer by layer, because it contains both superconducting building blocks (Fe2As2 layers) and intermediate Pt4As8 layers. Cleaving a single crystal under ultra-high vacuum results in multiple terminations: an ordered Pt4As8 layer, two reconstructed Ca layers on the top of a Pt4As8 layer, and disordered Ca layer on the top of Fe2As2 layer. The electronic properties of individual layers are studied using scanning tunneling microscopy/spectroscopy (STM/S), which reveals different spectra for each surface. Remarkably superconducting coherence peaks are seen only on the ordered Ca/Pt4As8 layer. Our results indicate that an ordered structure with proper charge balance is required in order to preserve superconductivity.

cond-mat.supr-con↗