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Chih-Kang Shih

Publications and source records attributed to Chih-Kang Shih.

51 records · Page 3Linked to original sources

Distinct Reconstruction Patterns and Spin-Resolved Electronic States along the Zigzag Edges of Transition Metal Dichalcogenides

Two-dimensional transition metal dichalcogenides represent an emerging class of materials exhibiting various intriguing properties, and integration of such materials for potential device applications will necessarily encounter creation of different boundaries. Using first-principles approaches, here we investigate the structural, electronic, and magnetic properties along two inequivalent zigzag M and X edges of MX$_{2}$ (M=Mo, W; X=S, Se). Along the M edges, we reveal a previously unrecognized but energetically strongly preferred (2x1) reconstruction pattern, which is universally operative for all the MX$_{2}$, characterized by a self-passivation mechanism through place exchanges of the outmost X and M edge atoms. In contrast, the X edges undergo a more moderate (2x1) or (3x1) reconstruction for MoX$_{2}$ or WX$_{2}$, respectively. We further use the prototypical zigzag MoX$_{2}$ nanoribbons to demonstrate that the M and X edges possess distinctly different electronic and magnetic properties, which are discussed for spintronic and catalytic applications.

cond-mat.mtrl-sci↗

Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction

Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions using the same materials with different thicknesses. Using scanning tunneling microscopy and spectroscopy, here we show the real space image of electronic structures across the bilayer-monolayer interface in MoSe2 and WSe2. Most bilayer-monolayer heterojunctions are found to have a zigzag-orientated interface, and the band alignment of such atomically sharp heterojunctions is of type-I with a well-defined interface mode which acts as a narrower-gap quantum wire. The ability to utilize such commonly existing thickness terrace as lateral heterojunctions is a crucial addition to the tool set for device applications based on atomically thin transition metal dichalcogenides, with the advantage of easy and flexible implementation.

cond-mat.mtrl-sci↗

Probing critical point energies of transition metal dichalcogenides: surprising indirect gap of single layer $SL-WSe_2$

Understanding quasiparticle band structures of transition metal dichalcogenides (TMDs) is critical for technological advances of these materials for atomic layer electronics and photonics. Although theoretical calculations to date have shown qualitatively similar features, there exist subtle differences which can lead to important consequences in the device characteristics. For example, most calculations have shown that all single layer (SL) TMDs have direct band gaps, while some have shown that $SL-WSe_2$ have an indirect gap. Moreover, there are large variations in the reported quasiparticle gaps, corresponding to large variations in exciton binding energies. By using a comprehensive form of scanning tunneling spectroscopy, we have revealed detailed quasiparticle electronic structures in TMDs, including the quasi-particle gaps, critical point energy locations and their origins in the Brillouin Zones (BZs). We show that $SL-WSe_2$ actually has an indirect quasi-particle gap with the conduction band minimum located at the Q point (instead of K), albeit the two states are nearly degenerate. Its implications on optical properties are discussed. We have further observed rich quasi-particle electronic structures of TMDs as a function of atomic structures and spin-orbital couplings.

cond-mat.mes-hall↗

Determination of band alignment in the single layer MoS2/WSe2 heterojunction

The emergence of transition metal dichalcogenides (TMDs) as 2D electronic materials has stimulated proposals of novel electronic and photonic devices based on TMD heterostructures. Here we report the determination of band offsets in TMD heterostructures by using microbeam X-ray photoelectron spectroscopy (μ-XPS) and scanning tunneling microscopy/spectroscopy (STM/S). We determine a type-II alignment between $\textrm{MoS}_2$ and $\textrm{WSe}_2$ with a valence band offset (VBO) value of 0.83 eV and a conduction band offset (CBO) of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of $\textrm{WSe}_2$ and $\textrm{MoS}_2$ are well retained in their respective layers due to a weak interlayer coupling. Moreover, a VBO of 0.94 eV is obtained from density functional theory (DFT), consistent with the experimental determination.

cond-mat.mtrl-sci↗

Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator

A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport signatures predicted for such topological surface states (TSS) is a well-defined half-integer quantum Hall effect (QHE) in a magnetic field, where the surface Hall conductivities become quantized in units of (1/2)e2/h (e being the electron charge, h the Planck constant) concomitant with vanishing resistance. Here, we observe well-developed QHE arising from TSS in an intrinsic TI of BiSbTeSe2. Our samples exhibit surface dominated conduction even close to room temperature, while the bulk conduction is negligible. At low temperatures and high magnetic fields perpendicular to the top and bottom surfaces, we observe well-developed integer quantized Hall plateaus, where the two parallel surfaces each contributing a half integer e2/h quantized Hall (QH) conductance, accompanied by vanishing longitudinal resistance. When the bottom surface is gated to match the top surface in carrier density, only odd integer QH plateaus are observed, representing a half-integer QHE of two degenerate Dirac gases. This system provides an excellent platform to pursue a plethora of exotic physics and novel device applications predicted for TIs, ranging from magnetic monopoles and Majorana particles to dissipationless electronics and fault-tolerant quantum computers.

cond-mat.mes-hall↗

Direct imaging of the band profile in single layer ${\small MoS_2}$ on graphite: quasiparticle energy gap, metallic edge states and edge band bending

Using Scanning Tunneling Microscopy and Spectroscopy, we probe the electronic structures of single layer ${\small MoS_2}$ on graphite. We show that the quasiparticle energy gap of single layer ${\small MoS_2}$ is 2.15 $\pm$ 0.07 eV at 77 K. Combining with temperature dependent photoluminescence studies, we deduce an exciton binding energy of 0.22 $\pm$ 0.1 eV, a value that is much lower than current theoretical predictions. Consistent with theoretical predictions we directly observed metallic edge states of single layer ${\small MoS_2}$. In the bulk region of ${\small MoS_2}$, the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/${\small MoS_2}$ heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level pinning of a 3D semiconductor by metallic surface states.

cond-mat.mtrl-sci↗

Intrinsic Optical Properties and Enhanced Plasmonic Response of Epitaxial Silver

Plasmonics offers an enticing platform to manipulate light at the subwavelength scale. Currently, loss represents the most serious challenge impeding its progress and broad impact towards practical technology. In this regard, silver (Ag) is by far the preferred plasmonic material at optical frequencies, having the lowest loss among all metals in this frequency range. However, large discrepancies exist among widely quoted values of optical loss in Ag due to variations in sample preparation procedures that produce uncontrollable grain boundaries and defects associated with additional loss. A natural question arises: what are the intrinsic fundamental optical properties of Ag and its ultimate possibilities in the field of plasmonics? Using atomically-smooth epitaxial Ag films, we extracted new optical constants that reflect significantly reduced loss and measured greatly enhanced propagation distance of surface plasmon polaritons (SPPs) beyond what was previously considered possible. By establishing a new benchmark in the ultimate optical properties of Ag, these results will have a broad impact for metamaterials and plasmonic applications.

cond-mat.mtrl-sci↗

Visualizing landscapes of the superconducting gap in heterogeneous superconductor thin films: geometric influences on proximity effects

The proximity effect is a central feature of superconducting junctions as it underlies many important applications in devices and can be exploited in the design of new systems with novel quantum functionality. Recently, exotic proximity effects have been observed in various systems, such as superconductor-metallic nanowires and graphene-superconductor structures. However, it is still not clear how superconducting order propagates spatially in a heterogeneous superconductor system. Here we report intriguing influences of junction geometry on the proximity effect for a 2D heterogeneous superconductor system comprised of 2D superconducting islands on top of a surface metal. Depending on the local geometry, the superconducting gap induced in the surface metal region can either be confined to the boundary of the superconductor, in which the gap decays within a short distance (~ 15 nm), or can be observed nearly uniformly over a distance of many coherence lengths due to non-local proximity effects.

cond-mat.supr-con↗

Universal Quenching of Superconductivity in Two-dimensional Nano-islands

We systematically address superconductivity of Pb nano-islands with different thicknesses and lateral sizes via a scanning tunneling microscopy/spectroscopy. Reduction of the superconducting gap is observed even when the island is larger than the bulk coherence length and becomes very fast below ~ 50 nm lateral size. The suppression of gap with size depends to a good approximation only on the volume of the island and is independent of its shape. Theoretical analysis indicates that the universal quenching behavior is primarily manifested by the mean number of electronic orbitals within the pairing energy window.

cond-mat.supr-con↗

Visualizing Quantum Well State Perturbations of Metallic Thin Films near Stacking Fault Defects

We demonstrate that quantum well states (QWS) of thin Pb films are highly perturbed within the proximity of intrinsic film defects. Scanning Tunneling Spectroscopy (STM/STS) measurements indicate that the energy of these states have a strong distance dependence within 4 nm of the defect with the strongest energetic fluctuations equaling up to 100 meV. These localized perturbations show large spatially-dependent asymmetries in the LDOS around the defect site for each corresponding quantum well state. These energetic fluctuations can be described by a simple model which accounts for fluctuations in the confinement potential induced by topographic changes.

cond-mat.mes-hall↗

Adsorbate-induced Restructuring of Pb mesas Grown on Vicinal Si(111) in the Quantum Regime

Using scanning tunneling microscopy and spectroscopy, we demonstrate that the adsorption of a minute amount of Cs on a Pb mesa grown in the quantum regime can induce dramatic morphological changes of the mesa, characterized by the appearance of populous monatomic-layer-high Pb nano-islands on top of the mesa. The edges of the Pb nano-islands are decorated with Cs adatoms, and the nano-islands preferentially nucleate and grow on the quantum mechanically unstable regions of the mesa. Furthermore, first-principles calculations within density functional theory show that the Pb atoms forming these nano-islands were expelled by the adsorbed Cs atoms via a kinetically accessible place exchange process when the Cs atoms alloyed into the top layer of the Pb mesa.

cond-mat.mtrl-sci↗

Observation of simultaneous fast and slow light

We present a microresonator-based system capable of simultaneously producing time-advanced and time-delayed pulses. The effect is based on the combination of a sharp spectral feature with two orthogonally-polarized propagating waveguide modes. We include an experimental proof-of-concept implementation using a silica microsphere coupled to a tapered optical fiber and use a time-domain picture to interpret the observed delays. We also discuss potential applications for future all-optical networks.

physics.optics↗

Resonance fluorescence from a coherently driven semiconductor quantum dot in a cavity

We show that resonance fluorescence, i.e. the resonant emission of a coherently driven two-level system, can be realized with a semiconductor quantum dot. The dot is embedded in a planar optical micro-cavity and excited in a wave-guide mode so as to discriminate its emission from residual laser scattering. The transition from the weak to the strong excitation regime is characterized by the emergence of oscillations in the first-order correlation function of the fluorescence, g(t), as measured by interferometry. The measurements correspond to a Mollow triplet with a Rabi splitting of up to 13.3 micro eV. Second-order-correlation measurements further confirm non-classical light emission.

cond-mat.mtrl-sci↗

Polarization conversion in a silica microsphere

We experimentally demonstrate controlled polarization-selective phenomena in a whispering gallery mode resonator. We observed efficient ($\approx 75 %$) polarization conversion of light in a silica microsphere coupled to a tapered optical fiber with proper optimization of the polarization of the propagating light. A simple model treating the microsphere as a ring resonator provides a good fit to the observed behavior.

physics.optics↗

Coherent control of a V-type three-level system in a single quantum dot

In a semiconductor quantum dot, the Px and Py transitions to the polarization eigenstates, |x> and |y>, naturally form a three-level V-type system. Using low-temperature polarized photoluminescence spectroscopy, we have investigated the exciton dynamics arising under strong laser excitation. We also explicitly solved the density matrix equations for comparison with the experimental data. The polarization of the exciting field controls the coupling between the otherwise orthogonal states. In particular, when the system is initialized into |y>, a polarization-tailored pulse can swap the population into |x>, and vice-versa, effectively operating on the exciton spin.

cond-mat.mtrl-sci↗