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Chiu-Hua Huang

Publications and source records attributed to Chiu-Hua Huang.

2 recordsLinked to original sources

Electronic Reconstruction at the Quasicrystal-Moiré Crossover in Twisted Bilayer Graphene

Large twist angles in twisted bilayer graphene are widely expected to be electronically trivial, with negligible interlayer coupling and no electronic reconstruction, in contrast to the rich moiré-driven band reconstruction and correlated physics that emerge at small twist angles. Here, we show that this paradigm breaks down near a twist angle of 29°, where the system crosses over between quasicrystalline and commensurate order. Atomic-resolution transmission electron microscopy directly reveals the coexistence of near-dodecagonal quasicrystalline symmetry and emerging moiré periodicity, indicating an intermediate, nonperiodic structural regime. Magnetotransport measurements uncover strong interlayer hybridization mediated by Umklapp scattering, manifested by magneto-intersubband oscillations and a highly unconventional Landau-level spectrum. Remarkably, the Landau-level degeneracy evolves from 4- to 12-fold with increasing temperature, a behavior incompatible with two decoupled graphene monolayers. These findings establish large-angle twisted bilayer graphene as a platform where quasiperiodic symmetry fundamentally reshapes low-energy electronic states beyond the conventional moiré framework.

cond-mat.mes-hall

Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride

Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating atomically-flat surface nanostructures in hexagonal boron nitride, we achieve an arbitrary on-chip control of both the strain distribution and magnitude on high-quality molybdenum disulfide. The phonon and exciton emissions are shown to vary in accordance with our strain field designs, enabling us to write and draw any photoluminescence color image in a single chip. Moreover, our strain engineering offers a powerful means to significantly and controllably alter the strengths and energies of interlayer excitons at room temperature. This method can be easily extended to other material systems and offers a promise for functional excitonic devices.

cond-mat.mes-hall