arXiv · 2401.01300
Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride
Abstract
Strain engineering has quickly emerged as a viable option to modify the electronic, optical and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that by creating atomically-flat surface nanostructures in hexagonal boron nitride, we achieve an arbitrary on-chip control of both the strain distribution and magnitude on high-quality molybdenum disulfide. The phonon and exciton emissions are shown to vary in accordance with our strain field designs, enabling us to write and draw any photoluminescence color image in a single chip. Moreover, our strain engineering offers a powerful means to significantly and controllably alter the strengths and energies of interlayer excitons at room temperature. This method can be easily extended to other material systems and offers a promise for functional excitonic devices.
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Yu-Chiang Hsieh, Zhen-You Lin, Shin-Ji Fung, Wen-Shin Lu, Sheng-Chin Ho, Siang-Ping Hong, Sheng-Zhu Ho, Chiu-Hua Huang, Kenji Watanabe, Takashi Taniguchi, Yang-Hao Chan, Yi-Chun Chen, Chung-Lin Wu, Tse-Ming Chen. 2024-01-02. Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride. https://doi.org/10.1021/acs.nanolett.3c01208
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