arXiv subjects

Christoforos Theodorou

Publications and source records attributed to Christoforos Theodorou.

3 recordsLinked to original sources

arXiv2025

Impact of interdigitated electrodes design on the low frequency and random telegraph noise of single-layer graphene micro ribbons

High performance devices consisting of interdigitated electrodes (IDEs) on top of single-layer graphene (SLG) are candidates with favorable prospects for sensing applications. Graphene micro ribbons (GMRs) of various widths and IDE design geometries were fabricated and experimentally examined regarding their low-frequency noise (LFN) behavior. Measurements revealed a 1/f behavior and different kinds of trap activity behind it, which were studied through the analysis of random telegraph noise (RTN) signals. Our investigation suggests that adjusting the geometrical characteristics of either the GMR width or the IDE topology can significantly influence the signal-to-noise ratio (SNR) of SLG-based electronics. On the bright side, the results of our study can provide useful guidelines for fabrication decisions to maximize the SNR.

cond-mat.mes-hall↗

arXiv2025

The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs

This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study successfully attains four distinct and stable resistance states. To gain deeper insights, a Low-Frequency Noise (LFN) statistical analysis is conducted to investigate the role of a tunneling oxide between the bottom electrode and SiNx at various resistance levels. The findings from the LFN measurements strongly suggest that the multilevel high resistance switching primarily arises from variations in the number of nitrogen vacancies, which in turn modulate the conductivity of conductive filaments (CF). Notably, this modulation does not compromise the quality of the filament's surrounding interface. This research sheds light on the underlying mechanisms of RRAM cells and their potential for advanced memory applications.

cond-mat.mtrl-sci↗

arXiv2025

1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes

Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In this research work, we fabricated SLG micro-ribbon (GMR) devices with IDE having different geometric parameters. 1/f noise behavior was observed in all of the examined devices, and in some cases random telegraph noise (RTN) signals suggesting that carrier trapping/de-trapping is taking place. Our experimental results indicate that the geometrical characteristics can have a crucial impact on device performance, due to the direct area dependence of the noise level.

physics.app-ph↗