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arXiv · 2502.01348

1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes

Georgia Samara·Nikolaos Vasileiadis·Alexandros Mavropoulis·Christoforos Theodorou·Konstantinos Papagelis·Panagiotis Dimitrakis
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Abstract

Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In this research work, we fabricated SLG micro-ribbon (GMR) devices with IDE having different geometric parameters. 1/f noise behavior was observed in all of the examined devices, and in some cases random telegraph noise (RTN) signals suggesting that carrier trapping/de-trapping is taking place. Our experimental results indicate that the geometrical characteristics can have a crucial impact on device performance, due to the direct area dependence of the noise level.

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Georgia Samara, Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou, Konstantinos Papagelis, Panagiotis Dimitrakis. 2025-02-03. 1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes. https://doi.org/10.1109/icnf57520.2023.10472775

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