arXiv subjects

Christoph Stampfer

Publications and source records attributed to Christoph Stampfer.

At least 109 records · Page 6Linked to original sources

arXiv2015

Low B Field Magneto-Phonon Resonances in Single-Layer and Bilayer Graphene

Many-body effects resulting from strong electron-electron and electron-phonon interactions play a significant role in graphene physics. We report on their manifestation in low B field magneto-phonon resonances in high quality exfoliated single-layer and bilayer graphene encapsulated in hexagonal boron nitride. These resonances allow us to extract characteristic effective Fermi velocities, as high as $1.20 \times 10^6$ m/s, for the observed "dressed" Landau level transitions, as well as the broadening of the resonances, which increases with Landau level index.

cond-mat.mes-hall↗

arXiv2015

Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge charier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of- the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/pHz making our graphene sensors highly interesting for industrial applications.

cond-mat.mes-hall↗

arXiv2015

Raman spectroscopy as probe of nanometer-scale strain variations in graphene

Confocal Raman spectroscopy is a versatile, non-invasive investigation tool and a major workhorse for graphene characterization. Here we show that the experimentally observed Raman 2D line width is a measure of nanometer-scale strain variations in graphene. By investigating the relation between the G and 2D line at high magnetic fields we find that the 2D line width contains valuable information on nanometer-scale flatness and lattice deformations of graphene, making it a good quantity for classifying the structural quality of graphene even at zero magnetic field.

cond-mat.mes-hall↗

arXiv2014

Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices

We have performed systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theoretical analysis, to identify the dominant source of disorder in this system. Low-temperature transport measurements on many devices reveal a clear correlation between the carrier mobility $μ$ and the width $n^*$ of the resistance peak around charge neutrality, demonstrating that charge scattering and density inhomogeneities originate from the same microscopic mechanism. The study of weak-localization unambiguously shows that this mechanism is associated to a long-ranged disorder potential, and provides clear indications that random pseudo-magnetic fields due to strain are the dominant scattering source. Spatially resolved Raman spectroscopy measurements confirm the role of local strain fluctuations, since the line-width of the Raman 2D-peak --containing information of local strain fluctuations present in graphene-- correlates with the value of maximum observed mobility. The importance of strain is corroborated by a theoretical analysis of the relation between $μ$ and $n^*$ that shows how local strain fluctuations reproduce the experimental data at a quantitative level, with $n^*$ being determined by the scalar deformation potential and $μ$ by the random pseudo-magnetic field (consistently with the conclusion drawn from the analysis of weak-localization). Throughout our study, we compare the behavior of devices on hBN substrates to that of devices on SiO$_2$ and SrTiO$_3$, and find that all conclusions drawn for the case of hBN are compatible with the observations made on these other materials. These observations suggest that random strain fluctuations are the dominant source of disorder for high-quality graphene on many different substrates, and not only on hexagonal boron nitride.

cond-mat.mes-hall↗

arXiv2014

Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature

We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi- and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10$μ$m combined with carrier mobilities exceeding 20,000 cm$^2$/Vs.

cond-mat.mes-hall↗

arXiv2013

Reducing disorder in graphene nanoribbons by chemical edge modification

We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrouoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.

cond-mat.mes-hall↗

arXiv2013

Local transport measurements on epitaxial graphene

Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip STM/SEM the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport measurements. The systematic variation of probe spacings and substrate temperature has clearly revealed two-dimensional transport regimes of Anderson localization as well as of diffusive transport. The detailed analysis of the temperature dependent data demonstrates that the local on-top nano-sized contacts do not induce significant strain to the epitaxial graphene films.

cond-mat.mes-hall↗

arXiv2013

Probing relaxation times in graphene quantum dots

Graphene quantum dots are attractive candidates for solid-state quantum bits. In fact, the predicted weak spin-orbit and hyperfine interaction promise spin qubits with long coherence times. Graphene quantum dot devices have been extensively investigated with respect to their excitation spectrum, spin-filling sequence, and electron-hole crossover. However their relaxation dynamics remain largely unexplored. This is mainly due to challenges in device fabrication, in particular regarding the control of carrier confinement and the tunability of the tunnelling barriers, both crucial to experimentally investigate decoherence times. Here, we report on pulsed-gate transient spectroscopy and relaxation time measurements of excited states in graphene quantum dots. This is achieved by an advanced device design, allowing to tune the tunnelling barriers individually down to the low MHz regime and to monitor their asymmetry with integrated charge sensors. Measuring the transient currents through electronic excited states, we estimate lower limit of charge relaxation times on the order of 60-100 ns.

cond-mat.mes-hall↗

arXiv2013

Electronic Excited States in Bilayer Graphene Double Quantum Dots

We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions acting as tunneling barriers are 30 nm in width. The double quantum dot features addition energies on the order of 20 meV. Charge stability diagrams allow us to study the tunable interdot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points over a large energy range. The obtained constant level spacing of 1.75 meV over a wide energy range is in good agreement with the expected single-particle energy spacing in bilayer graphene quantum dots. Finally, we investigate the evolution of the electronic excited states in a parallel magnetic field.

cond-mat.mes-hall↗

arXiv2011

Charge detection in a bilayer graphene quantum dot

We show measurements on a bilayer graphene quantum dot with an integrated charge detector. The focus lies on enabling charge detection with a 30 nm wide bilayer graphene nanoribbon located approximately 35 nm next to a bilayer graphene quantum dot with an island diameter of about 100 nm. Local resonances in the nanoribbon can be successfully used to detect individual charging events in the dot even in regimes where the quantum dot Coulomb peaks cannot be measured by conventional techniques.

cond-mat.mes-hall↗

arXiv2011

Tunable capacitive inter-dot coupling in a bilayer graphene double quantum dot

We report on a double quantum dot which is formed in a width-modulated etched bilayer graphene nanoribbon. A number of lateral graphene gates enable us to tune the quantum dot energy levels and the tunneling barriers of the device over a wide energy range. Charge stability diagrams and in particular individual triple point pairs allow to study the tunable capacitive inter-dot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points. We extract a mutual capacitive inter-dot coupling in the range of 2 - 6 meV and an inter-dot tunnel coupling on the order of 1.5 μeV.

cond-mat.mes-hall↗

arXiv2011

Readout of carbon nanotube vibrations based on spin-phonon coupling

We propose a scheme for spin-based detection of the bending motion in suspended carbon-nanotubes, using the curvature-induced spin-orbit interaction. We show that the resulting effective spin-phonon coupling can be used to down-convert the high-frequency vibration-modulated spin-orbit field to spin-flip processes at a much lower frequency. This vibration-induced spin-resonance can be controlled with an axial magnetic field. We propose a Pauli spin blockade readout scheme and predict that the leakage current shows pronounced peaks as a function of the external magnetic field. Whereas the resonant peaks allow for frequency readout, the slightly off-resonant current is sensitive to the vibration amplitude.

cond-mat.mes-hall↗

arXiv2011

Raman spectroscopy on etched graphene nanoribbons

We investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy. We show that the D-line intensity only depends on the edge-region of the nanoribbon and that consequently the fabrication process does not introduce bulk defects. In contrast, the G- and the 2D-lines scale linearly with the irradiated area and therefore with the width of the ribbons. We further give indications that the D- to G-line ratio can be used to gain information about the crystallographic orientation of the underlying graphene. Finally, we perform polarization angle dependent measurements to analyze the nanoribbon edge-regions.

cond-mat.mes-hall↗

arXiv2010

Asymmetric Franck-Condon factors in suspended carbon nanotube quantum dots

Electronic states and vibrons in carbon nanotube quantum dots have in general different location and size. As a consequence, the conventional Anderson-Holstein model, coupling vibrons to the dot total charge only, may no longer be appropriated in general. Here we explicitly address the role of the spatial fluctuations of the electronic density, yielding space-dependent Franck-Condon factors. We discuss the consequent marked effects on transport which are compatible with recent measurements. This picture can be relevant for tunneling experiments in generic nano-electromechanical systems.

cond-mat.mes-hall↗

arXiv2010

Selective Chemical Modification of Graphene surfaces: Distinction between Single and Bilayer Graphene

Graphene modifications with oxygen or hydrogen are well known in contrast to carbon attachment to the graphene lattice. The chemical modification of graphene sheets with aromatic diazonium ions (carbon attachment) is analyzed by confocal Raman spectroscopy. The temporal and spatial evolution of surface adsorbed species allowed accurate tracking of the chemical reaction and identification of intermediates. The controlled transformation of sp2 to sp3 carbon proceeds in two separate steps. The presented derivatization is selective for single layer graphene and allows controlled transformation of adsorbed diazonium reagents into covalently bound surface derivatives with enhanced reactivity at the edge of single layer graphene. On bi-layer graphene the derivatization proceeds to an adsorbed intermediate without further reaction to form a covalent attachment on the carbon surface.

cond-mat.mtrl-sci↗

arXiv2009

Aharonov-Bohm effect in a side-gated graphene ring

We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of pi in the Aharonov-Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be well interpreted within existing models for 'dirty metals' giving a phase coherence length of the order of 1 micrometer at a temperature of 500mK.

cond-mat.mes-hall↗

arXiv2009

Transport through open quantum dots: making semiclassics quantitative

We investigate electron transport through clean open quantum dots (quantum billiards). We present a semiclassical theory that allows to accurately reproduce quantum transport calculations. Quantitative agreement is reached for individual energy and magnetic field dependent elements of the scattering matrix. Two key ingredients are essential: (i) inclusion of pseudo-paths which have the topology of linked classical paths resulting from diffraction in addition to classical paths and (ii) a high-level approximation to diffractive scattering. Within this framework of the pseudo-path semiclassical approximation (PSCA), typical shortcomings of semiclassical theories such as violation of the anti-correlation between reflection and transmission and the overestimation of conductance fluctuations are overcome. Beyond its predictive capabilities the PSCA provides deeper insights into the quantum-to-classical crossover.

cond-mat.mes-hall↗

arXiv2008

Franck-Condon blockade in suspended carbon nanotube quantum dots

Understanding the influence of vibrational motion of the atoms on electronic transitions in molecules constitutes a cornerstone of quantum physics, as epitomized by the Franck-Condon principle of spectroscopy. Recent advances in building molecular-electronics devices and nanoelectromechanical systems open a new arena for studying the interaction between mechanical and electronic degrees of freedom in transport at the single-molecule level. The tunneling of electrons through molecules or suspended quantum dots has been shown to excite vibrational modes, or vibrons. Beyond this effect, theory predicts that strong electron-vibron coupling dramatically suppresses the current flow at low biases, a collective behaviour known as Franck-Condon blockade. Here we show measurements on quantum dots formed in suspended single-wall carbon nanotubes revealing a remarkably large electron-vibron coupling and, due to the high quality and unprecedented tunability of our samples, admit a quantitative analysis of vibron-mediated electronic transport in the regime of strong electron-vibron coupling. This allows us to unambiguously demonstrate the Franck-Condon blockade in a suspended nanostructure. The large observed electron-vibron coupling could ultimately be a key ingredient for the detection of quantized mechanical motion. It also emphasizes the unique potential for nanoelectromechanical device applications based on suspended graphene sheets and carbon nanotubes.

cond-mat.mes-hall↗