arXiv subjects

Chunfeng Li

Publications and source records attributed to Chunfeng Li.

4 recordsLinked to original sources

arXiv2026

Higher odd-order nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4

The nonlinear Hall effect is a new member of the Hall effect family, which attracts intense research interests, and it is closely related to the quantum geometry of quantum materials. The previous studies primarily concentrate on the second-order and third-order nonlinear Hall effect. However, the experimental study of higher-order nonlinear Hall effect is scarce at present. In this work, we report the observations of the higher odd-order (third-, fifth-, seventh-order) nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4 thin flakes. The higher odd-order nonlinear Hall voltage exhibits a twofold angular dependence and exists only below the N\'eel temperature. It reaches its maximum near the charge neutral point and decays exponentially as the order of the nonlinear Hall effect increases. Furthermore, such higher odd-order nonlinear Hall effect is observed in both odd- and even-layer samples with comparable magnitudes. Theoretical analysis indicates that the higher odd-order nonlinear Hall effect responses may arise from the Berry curvature multipoles. Our work paves the way for the study of the higher-order nonlinear transport phenomena.

cond-mat.mes-hall↗

arXiv2023

Observation of giant nonreciprocal charge transport from quantum Hall states in a topological insulator

Symmetry breaking in quantum materials is of great importance and can lead to nonreciprocal charge transport. Topological insulators provide a unique platform to study nonreciprocal charge transport due to their surface states, especially quantum Hall states under external magnetic field. Here, we report the observation of nonreciprocal charge transport mediated by quantum Hall states in devices composed of the intrinsic topological insulator Sn-Bi1.1Sb0.9Te2S, which is attributed to asymmetric scattering between quantum Hall states and Dirac surface states. A giant nonreciprocal coefficient of up to 2.26*10^5 A^-1 is found. Our work not only reveals the properties of nonreciprocal charge transport of quantum Hall states in topological insulators, but also paves the way for future electronic devices.

cond-mat.mes-hall↗

arXiv2023

QoE-based Semantic-Aware Resource Allocation for Multi-Task Networks

By transmitting task-related information only, semantic communications yield significant performance gains over conventional communications. However, the lack of mature semantic theory about semantic information quantification and performance evaluation makes it challenging to perform resource allocation for semantic communications, especially when multiple tasks coexist in the network. To cope with this challenge, we propose a quality-of-experience (QoE) based semantic-aware resource allocation method for multi-task networks in this paper. First, semantic entropy is defined to quantify the semantic information for different tasks, and the relationship between semantic entropy and Shannon entropy is analyzed. Then, we develop a novel QoE model to formulate the semantic-aware resource allocation in terms of semantic compression, channel assignment, and transmit power. The compatibility of the formulated problem with conventional communications is further demonstrated. To solve this problem, we decouple it into two subproblems and solved them by a developed deep Q-network (DQN) based method and a proposed low-complexity matching algorithm, respectively. Finally, simulation results validate the effectiveness and superiority of the proposed method, as well as its compatibility with conventional communications.

cs.IT↗

arXiv2022

Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures

Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration to be half-covered by CrI3, the exchange bias becomes positive with a very large exchange bias field exceeding 300 mT. Such sensitive manipulation is explained by the competition between the FM and AFM coupling at the interface of CrI3 and MnBi2Te4, pointing to coverage-dependent interfacial magnetic interactions. Our work will facilitate the development of topological and antiferromagnetic devices.

cond-mat.mtrl-sci↗