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arXiv · 2604.21293

Higher odd-order nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4

Xiubing Li·Zheng Dai·Shuai Zhang·Heng Zhang·Congcong Li·Boyuan Wei·Fengyi Guo·Chunfeng Li·Fucong Fei·Minhao Zhang·Xuefeng Wang·Huaiqiang Wang·Fengqi Song
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Abstract

The nonlinear Hall effect is a new member of the Hall effect family, which attracts intense research interests, and it is closely related to the quantum geometry of quantum materials. The previous studies primarily concentrate on the second-order and third-order nonlinear Hall effect. However, the experimental study of higher-order nonlinear Hall effect is scarce at present. In this work, we report the observations of the higher odd-order (third-, fifth-, seventh-order) nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4 thin flakes. The higher odd-order nonlinear Hall voltage exhibits a twofold angular dependence and exists only below the N\'eel temperature. It reaches its maximum near the charge neutral point and decays exponentially as the order of the nonlinear Hall effect increases. Furthermore, such higher odd-order nonlinear Hall effect is observed in both odd- and even-layer samples with comparable magnitudes. Theoretical analysis indicates that the higher odd-order nonlinear Hall effect responses may arise from the Berry curvature multipoles. Our work paves the way for the study of the higher-order nonlinear transport phenomena.

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Xiubing Li, Zheng Dai, Shuai Zhang, Heng Zhang, Congcong Li, Boyuan Wei, Fengyi Guo, Chunfeng Li, Fucong Fei, Minhao Zhang, Xuefeng Wang, Huaiqiang Wang, Fengqi Song. 2026-04-23. Higher odd-order nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4. https://doi.org/10.1038/s41467-026-73418-0

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