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Claes Thelander

Publications and source records attributed to Claes Thelander.

At least 19 recordsLinked to original sources

Radial etching of strongly confined crystal-phase defined quantum dots

We realize strongly confined quantum dots (QDs) in InAs nanowires (NWs) by combining epitaxial crystal-phase control with chemical wet etching. A strong axial confinement is first introduced by growing closely spaced wurtzite (WZ) tunnel barriers in NWs to enclose a zinc blende (ZB) QD. The NW cross-section is then reduced by isotropic etching to obtain very small QDs, with a maximum observed charging energy > 30 meV. Using low-temperature electrical characterization and finite-element method simulations, we study how charging energies and the onset of electron filling scale with QD diameter. For extremely small diameters, we identify a regime where stray capacitances become non-negligible, limiting further increase in charging energy by diameter reduction alone. This approach to increasing confinement is particularly relevant for understanding the strong spin-orbit interaction observed in crystal-phase QDs, possibly linked to polarization charges at the WZ/ZB interfaces. Small diameter QDs allow considerably weaker interfering electric fields when studied, but the QDs cannot be realized with epitaxial growth alone due to a loss of crystal phase control.

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Coherence of an Electronic Two-Level System under Continuous Charge Sensing by a Quantum Dot Detector

We investigate experimentally the quantum coherence of an electronic two-level system in a double quantum dot under continuous charge detection. The charge-state of the two-level system is monitored by a capacitively coupled single quantum dot detector that imposes a back-action effect to the system. The measured back-action is well described by an additional decoherence rate, approximately linearly proportional to the detector electron tunneling rate. We provide a model for the decoherence rate arising due to level detuning fluctuations induced by detector charge fluctuations. The theory predicts a factor of two lower decoherence rate than observed in the experiment, suggesting the need for a more elaborate theory accounting for additional sources of decoherence.

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A coherence sweet spot with enhanced dipolar coupling

Qubits require a compromise between operation speed and coherence. Here, we demonstrate a compromise-free singlet-triplet (ST) qubit, where the qubit couples maximally to the driving field while simultaneously coupling minimally to the dominant noise sources. The qubit is implemented in a crystal-phase defined double-quantum dot in an InAs nanowire. Using a superconducting resonator, we measure the spin-orbit interaction (SOI) gap, the spin-photon coupling strength and the qubit decoherence rate as a function of the in-plane magnetic-field orientation. We demonstrate a spin qubit sweet spot maximizing the dipolar coupling and simultaneously minimizing the decoherence. Our theoretical description postulates phonons as the most likely dominant noise source. The compromise-free sweet spot originates from the SOI suggesting that it is not restricted to this material platform, but might find applications in any material with SOI. These findings pave the way for enhanced engineering of these nanomaterials for next-generation qubit technologies.

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Josephson junction \pi-0 transition induced by orbital hybridization in a double quantum dot

In this work, we manipulate the phase shift of a Josephson junction using a parallel double quantum dot (QD). By employing a superconducting quantum interference device, we determine how orbital hybridization and detuning affect the current-phase relation in the Coulomb blockade regime. For weak hybridization between the QDs, we find $\pi$ junction characteristics if at least one QD has an unpaired electron. Notably the critical current is higher when both QDs have an odd electron occupation. By increasing the inter-QD hybridization the critical current is reduced, until eventually a $\pi$-0 transition occurs. A similar transition appears when detuning the QD levels at finite hybridization. Based on a zero-bandwidth model, we argue that both cases of phase-shift transitions can be understood considering an increased weight of states with a double occupancy in the ground state and with the Cooper pair transport dominated by local Andreev reflection.

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Dephasing in a crystal-phase defined double quantum dot charge qubit strongly coupled to a high-impedance resonator

Dephasing of a charge qubit is usually credited to charge noise in the environment. Here we show that charge noise may not be the limiting factor for the qubit coherence. To this end, we study coherence properties of a crystal-phase defined semiconductor nanowire double quantum dot (DQD) charge qubit strongly coupled to a high-impedance resonator using radio-frequency (RF) reflectometry. Response of this hybrid system is measured both at a charge noise sensitive operation point (with finite DQD detuning) and at an insensitive point (so-called sweet spot with zero detuning). A theoretical model based on Jaynes-Cummings Hamiltonian matches the experimental results well and yields only a 10 % difference in dephasing rates between the two cases, despite that the sensitivity to detuning charge noise differs by a factor of 5. Therefore the charge noise is not the limiting factor for the coherence in this type of semiconducting nanowire qubits.

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Strong coupling between a microwave photon and a singlet-triplet qubit

Tremendous progress in few-qubit quantum processing has been achieved lately using superconducting resonators coupled to gate voltage defined quantum dots. While the strong coupling regime has been demonstrated recently for odd charge parity flopping mode spin qubits, first attempts towards coupling a resonator to even charge parity singlet-triplet spin qubits have resulted only in weak spin-photon coupling strengths. Here, we integrate a zincblende InAs nanowire double quantum dot with strong spin-orbit interaction in a magnetic-field resilient, high-quality resonator. In contrast to conventional strategies, the quantum confinement is achieved using deterministically grown wurtzite tunnel barriers without resorting to electrical gating. Our experiments on even charge parity states and at large magnetic fields, allow to identify the relevant spin states and to measure the spin decoherence rates and spin-photon coupling strengths. Most importantly, we find an anti-crossing between the resonator mode in the single photon limit and a singlet-triplet qubit with an electron spin-photon coupling strength of $g/2\pi=139\pm4$ MHz. Combined with the resonator decay rate $\kappa/2\pi=19.8\pm0.2$ MHz and the qubit dephasing rate $\gamma/2\pi=116\pm7$ MHz, our system achieves the strong coupling regime in which the coherent coupling exceeds qubit and resonator linewidth. These results pave the way towards large-scale quantum system based on singlet-triplet qubits.

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Quantum Dot Source-Drain Transport Response at Microwave Frequencies

Quantum dots are frequently used as charge sensitive devices in low temperature experiments to probe electric charge in mesoscopic conductors where the current running through the quantum dot is modulated by the nearby charge environment. Recent experiments have been operating these detectors using reflectometry measurements up to GHz frequencies rather than probing the low frequency current through the dot. In this work, we use an on-chip coplanar waveguide resonator to measure the source-drain transport response of two quantum dots at a frequency of 6 GHz, further increasing the bandwidth limit for charge detection. Similar to the low frequency domain, the response is here predominantly dissipative. For large tunnel coupling, the response is still governed by the low frequency conductance, in line with Landauer-B\"uttiker theory. For smaller couplings, our devices showcase two regimes where the high frequency response deviates from the low frequency limit and Landauer-B\"uttiker theory: When the photon energy exceeds the quantum dot resonance linewidth, degeneracy dependent plateaus emerge. These are reproduced by sequential tunneling calculations. In the other case with large asymmetry in the tunnel couplings, the high frequency response is two orders of magnitude larger than the low frequency conductance G, favoring the high frequency readout.

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Josephson current via spin and orbital states of a tunable double quantum dot

Supercurrent transport is experimentally studied in a Josephson junction hosting a double quantum dot (DQD) with tunable symmetries. The QDs are parallel-coupled to two superconducting contacts and can be tuned between strong inter-dot hybridization and a ring geometry where hybridization is suppressed. In both cases, we observe supercurrents when the two interacting orbitals are either empty or filled with spins, or a combination. However, when each QD hosts an unpaired spin, the supercurrent depends on the spin ground state. It is strongly suppressed for the ring geometry with a spin-triplet ground state at zero external magnetic field. By increasing the QD hybridization, we find that a supercurrent appears when the ground state changes to spin-singlet. In general, supercurrents are suppressed in cases of spin doublet ground state, but an exception occurs at orbital degeneracy when the system hosts one additional spin, as opposed to three, pointing to a broken particle-hole symmetry.

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Energetics of microwaves probed by double quantum dot absorption

We explore the energetics of microwaves interacting with a double quantum dot photodiode and show wave-particle aspects in photon-assisted tunneling. The experiments show that the single photon energy sets the relevant absorption energy in a weak-drive limit, which contrasts the strong drive limit where the wave amplitude determines the relevant-energy scale and opens up microwave induced bias triangles. The threshold condition between these two regimes is set by the fine-structure constant of the system. The energetics are determined here with the detuning conditions of the double dot system and stopping-potential measurements that constitute a microwave version of the photoelectric effect.

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Experimental verification of the work fluctuation-dissipation relation for information-to-work conversion

We study experimentally work fluctuations in a Szilard engine that extracts work from information encoded as the occupancy of an electron level in a semiconductor quantum dot. We show that as the average work extracted per bit of information increases towards the Landauer limit $k_BT \ln 2$, the work fluctuations decrease in accordance with the work fluctuation-dissipation relation. We compare the results to a protocol without measurement and feedback and show that when no information is used, the work output and fluctuations vanish simultaneously contrasting the information-to-energy conversion case where increasing amount of work is produced with decreasing fluctuations. Our work highlights the importance of fluctuations in the design of information-to-work conversion processes.

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Symmetry-controlled singlet-triplet transition in a double-barrier quantum ring

We engineer a system of two strongly confined quantum dots to gain reproducible electrostatic control of the spin at zero magnetic field. Coupling the dots in a tight ring-shaped potential with two tunnel barriers, we demonstrate that an electric field can switch the electron ground state between a singlet and a triplet configuration. Comparing our experimental co-tunneling spectroscopy data to a full many-body treatment of interacting electrons in a double-barrier quantum ring, we find excellent agreement in the evolution of many-body states with electric and magnetic fields. The calculations show that the singlet-triplet energy crossover, not found in conventionally coupled quantum dots, is made possible by the ring-shaped geometry of the confining potential.

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Gate control, g-factors and spin orbit energy of p-type GaSb nanowire quantum dot devices

Proposals for quantum information applications are frequently based on the coherent manipulation of spins confined to quantum dots. For these applications, p-type III-V material systems promise a reduction of the hyperfine interaction while maintaining large $g$-factors and strong spin-orbit interaction. In this work, we study bottom-gated device architectures to realize single and serial multi-quantum dot systems in Schottky contacted p-type GaSb nanowires. We find that the effect of potentials applied to gate electrodes on the nanowire is highly localized to the immediate vicinity of the gate electrode only, which prevents the formation of double quantum dots with commonly used device architectures. We further study the transport properties of a single quantum dot induced by bottom-gating, find large gate-voltage dependent variations of the $g^*$-factors up to $8.1\pm 0.2$ as well as spin-orbit energies between $110$-$230\,\mu$eV.

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Efficient and Continuous Microwave Photodetection in Hybrid Cavity-Semiconductor Nanowire Double Quantum Dot Diodes

Single photon detectors are key for time-correlated photon counting applications [1] and enable a host of emerging optical quantum information technologies [2]. So far, the leading approach for continuous and efficient single-photon detection in the optical domain has been based on semiconductor photodiodes [3]. However, there is a paucity of efficient and continuous single-photon detectors in the microwave regime, because photon energies are four to five orders of magnitude lower therein and conventional photodiodes do not have that sensitivity. Here we tackle this gap and demonstrate how itinerant microwave photons can be efficiently and continuously converted to electrical current in a high-quality, semiconducting nanowire double quantum dot that is resonantly coupled to a cavity. In particular, in our detection scheme, an absorbed photon gives rise to a single electron tunneling event through the double dot, with a conversion efficiency reaching 6 %. Our results pave the way for photodiodes with single-shot microwave photon detection, at the theoretically predicted unit efficiency [4].

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Heat driven transport in serial double quantum dot devices

Studies of thermally induced transport in nanostructures provide access to an exciting regime where fluctuations are relevant, enabling the investigation of fundamental thermodynamic concepts and the realization of thermal energy harvesters. We study a serial double quantum dot formed in an InAs/InP nanowire coupled to two electron reservoirs. By means of a specially designed local metallic joule-heater, the temperature of the phonon bath in the vicinity of the double quantum dot can be enhanced. This results in phonon-assisted transport, enabling the conversion of local heat into electrical power in a nano-sized heat engine. Simultaneously, the electron temperatures of the reservoirs are affected, resulting in conventional thermoelectric transport. By detailed modelling and experimentally tuning the interdot coupling we disentangle both effects. Furthermore, we show that phonon-assisted transport gives access to the energy of excited states. Our findings demonstrate the versatility of our design to study fluctuations and fundamental nanothermodynamics.

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Selective tuning of spin-orbital Kondo contributions in parallel-coupled quantum dots

We use co-tunneling spectroscopy to investigate spin-, orbital-, and spin-orbital Kondo transport in a strongly confined system of InAs double quantum dots (QDs) parallel-coupled to source and drain. In the one-electron transport regime, the higher symmetry spin-orbital Kondo effect manifests at orbital degeneracy and no external magnetic field. We then proceed to show that the individual Kondo contributions can be isolated and studied separately; either by orbital detuning in the case of spin-Kondo transport, or by spin splitting in the case of orbital Kondo transport. By varying the inter-dot tunnel coupling, we show that lifting of the spin degeneracy is key to confirming the presence of an orbital degeneracy, and to detecting a small orbital hybridization gap. Finally, in the two-electron regime, we show that the presence of a spin-triplet ground state results in spin-Kondo transport at zero magnetic field.

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Imaging the Thermalization of Hot Carriers After Thermionic Emission Over a Polytype Barrier

The thermalization of non-equilibrium charge carriers is at the heart of thermoelectric energy conversion. In nanoscale systems, the equilibration length can be on the order of the system size, leading to a situation where thermoelectric effects need to be considered as spatially distributed, rather than localized at junctions. The energy exchange between charge carriers and phonons is of fundamental scientific and technological interest, but their assessment poses significant experimental challenges. We addressed these challenges by imaging the temperature change induced by Peltier effects in crystal phase engineered InAs nanowire (NW) devices. Using high-resolution scanning thermal microscopy (SThM), we have studied current-carrying InAs NWs, which feature a barrier segment of wurtzite (WZ) of varying length in a NW of otherwise zincblende (ZB) crystal phase. The energy barrier acts as a filter for electron transport around the Fermi energy, giving rise to a thermoelectric effect. We find that thermalization through electron-phonon heat exchange extends over the entire device. We analyze the temperature profile along a nanowire by comparing it to spatially dependent heat diffusion and electron thermalization models. We are able to extract the governing properties of the system, including the electron thermalization length of $223 \pm 9$\,nm, Peltier coefficient and Seebeck coefficient introduced by the barrier of $39 \pm 7$\,mV and $89 \pm 21$\,$\mu$V/K, respectively, and a thermal conductivity along the wire axis of $8.9 \pm 0.5$\,W/m/K. Finally, we compare two ways to extract the elusive thermal boundary conductance between NW and underlying substrate.

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Electrical control of spins and giant g-factors in ring-like coupled quantum dots

Emerging theoretical concepts for quantum technologies have driven a continuous search for structures where a quantum state, such as spin, can be manipulated efficiently. Central to many concepts is the ability to control a system by electric and magnetic fields, relying on strong spin-orbit interaction and a large g-factor. Here, we present a new mechanism for spin and orbital manipulation using small electric and magnetic fields. By hybridizing specific quantum dot states at two points inside InAs nanowires, nearly perfect quantum rings form. Large and highly anisotropic effective g-factors are observed, explained by a strong orbital contribution. Importantly, we find that the orbital and spin-orbital contributions can be efficiently quenched by simply detuning the individual quantum dot levels with an electric field. In this way, we demonstrate not only control of the effective g-factor from 80 to almost 0 for the same charge state, but also electrostatic change of the ground state spin.

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Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers

Double quantum dots (DQDs) hold great promise as building blocks for quantum technology as they allow for two electronic states to coherently couple. Defining QDs with materials rather than using electrostatic gating allows for QDs with a hard-wall confinement potential and more robust charge and spin states. An unresolved problem is how to individually address these quantum dots, which is necessary for controlling quantum states. We here report the fabrication of double quantum dot devices defined by the conduction band edge offset at the interface of the wurtzite and zinc blende crystal phases of InAs in nanowires. By using sacrifical epitaxial GaSb markers selectively forming on one crystal phase, we are able to precisely align gate electrodes allowing us to probe and control each QD independently. We hence observe textbook-like charge stability diagrams, a discrete energy spectrum and electron numbers consistent with theoretical estimates and investigate the tunability of the devices, finding that changing the electron number can be used to tune the tunnel barrier as expected by simple band diagram arguments.

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