arXiv subjects

Claes Thelander

Publications and source records attributed to Claes Thelander.

28 records · Page 2Linked to original sources

arXiv2019

Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers

Double quantum dots (DQDs) hold great promise as building blocks for quantum technology as they allow for two electronic states to coherently couple. Defining QDs with materials rather than using electrostatic gating allows for QDs with a hard-wall confinement potential and more robust charge and spin states. An unresolved problem is how to individually address these quantum dots, which is necessary for controlling quantum states. We here report the fabrication of double quantum dot devices defined by the conduction band edge offset at the interface of the wurtzite and zinc blende crystal phases of InAs in nanowires. By using sacrifical epitaxial GaSb markers selectively forming on one crystal phase, we are able to precisely align gate electrodes allowing us to probe and control each QD independently. We hence observe textbook-like charge stability diagrams, a discrete energy spectrum and electron numbers consistent with theoretical estimates and investigate the tunability of the devices, finding that changing the electron number can be used to tune the tunnel barrier as expected by simple band diagram arguments.

cond-mat.mes-hall↗

arXiv2018

Spectroscopy and level detuning of few-electron spin states in parallel InAs quantum dots

We use tunneling spectroscopy to study the evolution of few-electron spin states in parallel InAs nanowire double quantum dots (QDs) as a function of level detuning and applied magnetic field. Compared to the much more studied serial configuration, parallel coupling of the QDs to source and drain greatly expands the probing range of excited state transport. Owing to a strong confinement, we can here isolate transport involving only the very first interacting single QD orbital pair. For the (2,0)-(1,1) charge transition, with relevance for spin-based qubits, we investigate the excited (1,1) triplet, and hybridization of the (2,0) and (1,1) singlets. An applied magnetic field splits the (1,1) triplet, and due to spin-orbit induced mixing with the (2,0) singlet, we clearly resolve transport through all triplet states near the avoided singlet-triplet crossings. Transport calculations, based on a simple model with one orbital on each QD, fully replicate the experimental data. Finally, we observe an expected mirrored symmetry between the 1-2 and 2-3 electron transitions resulting from the two-fold spin degeneracy of the orbitals.

cond-mat.mes-hall↗

arXiv2018

Thermoelectric characterization of the Kondo resonance in nanowire quantum dots

We experimentally verify hitherto untested theoretical predictions about the thermoelectric properties of Kondo correlated quantum dots (QDs). The specific conditions required for this study are obtained by using QDs epitaxially grown in nanowires, combined with a recently developed method for controlling and measuring temperature differences at the nanoscale. This makes it possible to obtain data of very high quality both below and above the Kondo temperature, and allows a quantitative comparison with theoretical predictions. Specifically, we verify that Kondo correlations can induce a polarity change of the thermoelectric current, which can be reversed either by increasing the temperature or by applying a magnetic field.

cond-mat.mes-hall↗

arXiv2018

A quantum-dot heat engine operating close to the thermodynamic efficiency limits

Cyclical heat engines are a paradigm of classical thermodynamics, but are impractical for miniaturization because they rely on moving parts. A more recent concept is particle-exchange (PE) heat engines, which uses energy filtering to control a thermally driven particle flow between two heat reservoirs. As they do not require moving parts and can be realized in solid-state materials, they are suitable for low-power applications and miniaturization. It was predicted that PE engines could reach the same thermodynamically ideal efficiency limits as those accessible to cyclical engines, but this prediction has not been verified experimentally. Here, we demonstrate a PE heat engine based on a quantum dot (QD) embedded into a semiconductor nanowire. We directly measure the engine's steady-state electric power output and combine it with the calculated electronic heat flow to determine the electronic efficiency $η$. We find that at the maximum power conditions, $η$ is in agreement with the Curzon-Ahlborn efficiency and that the overall maximum $η$ is in excess of 70$\%$ of the Carnot efficiency while maintaining a finite power output. Our results demonstrate that thermoelectric power conversion can, in principle, be achieved close to the thermodynamic limits, with direct relevance for future hot-carrier photovoltaics, on-chip coolers or energy harvesters for quantum technologies.

cond-mat.mes-hall↗

arXiv2017

Thermoelectric power factor limit of a 1D nanowire

In the past decade, there has been significant interest in the potentially advantageous thermoelectric properties of one-dimensional (1D) nanowires, but it has been challenging to find high thermoelectric power factors based on 1D effect in practice. Here we point out that there is an upper limit to the thermoelectric power factor of non-ballistic 1D nanowires, as a consequence of the recently established quantum bound of thermoelectric power output. We experimentally test this limit in quasi-ballistic InAs nanowires by extracting the maximum power factor of the first 1D subband through I-V characterization, finding that the measured maximum power factors conform to the theoretical limit. The established limit predicts that a competitive power factor, on the order of mW/m-K^2, can be achieved by a single 1D electronic channel in state-of-the-art semiconductor nanowires with small cross-section and high crystal quality.

cond-mat.mes-hall↗

arXiv2017

Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

physics.app-ph↗

arXiv2016

Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates

We report growth and characterization of a coupled quantum dot structure that utilizes nanowire templates for selective epitaxy of radial heterostructures. The starting point is a zinc blende InAs nanowire with thin segments of wurtzite structure. These segments have dual roles: they act as tunnel barriers for electron transport in the InAs core, and they also locally suppress growth of a GaSb shell, resulting in coaxial InAs-GaSb quantum dots with integrated electrical probes. The parallel quantum dot structure hosts spatially separated electrons and holes that interact due to the type-II broken gap of InAs-GaSb heterojunctions. The Coulomb blockade in the electron and hole transport is studied, and periodic interactions of electrons and holes are observed and can be reproduced by modeling. Distorted Coulomb diamonds indicate voltage-induced ground-state transitions, possibly a result of changes in the spatial distribution of holes in the thin GaSb shell.

cond-mat.mes-hall↗

arXiv2016

Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering

We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with electrons, up to the point where Coulomb oscillations can no longer be resolved, we estimate a lower bound for the ZB-WZ conduction-band offset of 95 meV.

cond-mat.mes-hall↗

arXiv2015

Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the source-drain voltage from which an average electron-hole interaction strength of 2.9 meV is extracted. We also carry out magnetotransport measurements of a hole quantum dot in the GaSb core and extract level-dependent g- factors and a spin-orbit interaction.

cond-mat.mes-hall↗

arXiv1999

Coulomb Blockade Ratchet

We investigate the transport properties of a new class of ratchets. The device is constructed by applying an ac voltage to the metallic single electron tunneling transistor, and a net transport current is induced by the time-dependent bias-voltage, although the voltage value is on the average zero. The mechanism underlying this phenomenon is the Coulomb blockade of the single electron tunneling. The directions and the values of the induced net currents can be well controlled by the gate-voltage. A net transport current has also been observed even in the absence of the external bias-voltages, which is attributed to the noise in the circuit.

cond-mat.mes-hall↗