Searcharxiv⌕ Search

arXiv subjects

Clemens Rössler

Publications and source records attributed to Clemens Rössler.

At least 19 recordsLinked to original sources

Ion trap on borosilicate substrate with integrated femtosecond-laser-written waveguide

We present an ion-trap platform on borosilicate glass with an integrated femtosecond-laser-written waveguide for on-chip light delivery. The optical layer is physically separated from the electrode substrate and bonded atop the trap, remaining compatible with silicon-based integration. We engineer single-mode low-loss guidance at 729 nm with tunable mode-field diameter and achieve low-loss curved waveguides down to a radius of curvature of 6 mm. We also extend single-mode operation to a wavelength of 405 nm. The fabrication process is compatible with the industrial fabrication of a single-metal-layer surface-electrode trap, including active fiber alignment and bonding. We validate the platform in a cryogenic trapped-ion system with $^{40}$Ca$^+$, demonstrating trapping, shuttling the ion to a zone in front of the waveguide, and coherent operations driven by 729 nm light delivered through the integrated waveguide. We characterize the effect of the exposed dielectric on the ion and measure stray electric fields that show slow drift at a timescale of hours. The architecture is compatible with hybrid micro-optics (e.g. pick-and-place lenses) to realize single ion addressing and provides a robust, scalable route to integrated light delivery for trapped-ion devices.

quant-ph↗

Demonstration of transport in an ion trap design for two-dimensional lattices

Microfabricated ion trap chips are at the core of some of the most advanced quantum computers. How a large number of ions is arranged and controlled on an ion trap chip depends on the chosen trap architecture. One such architecture is the quantum spring array (QSA). In the QSA architecture, ion chains are arranged in a two-dimensional lattice and interact with ion chains in neighboring sites in the radial and axial directions of the respective chain. This interaction, or coupling, is mediated by the Coulomb force while keeping ions in separate trapping sites, and scales inversely with the third power of the separation. The capability to control the distance between ions in the lattice is thus essential. In previous works, the radial separation between ions was tuned by controlling the rf pseudo-potential, which revealed to be experimentally challenging to realize while maintaining low heating rates. In this work, we present an ion trap chip design that allows tuning of the radial distance between ions using only dc voltages. The radial transport is executed between different interaction zones, designated for quantum operations, through specifically designed transition zones. A prototype of this type of ion trap chip was microfabricated on fused silica substrate. Its functionality is characterized by demonstrating dc-controlled radial transport of a single ion through a transition zone and measuring stray fields and ion heating rates in the center of the trap. Moreover, the fabrication of a multi-metal layer version of such a trap is presented as a scaling path for the presented chip design.

quant-ph↗

Demonstration of two-dimensional connectivity for a scalable error-corrected ion-trap quantum processor architecture

A major hurdle for building a large-scale quantum computer is increasing the number of qubits while maintaining connectivity between them. In trapped-ion devices, this connectivity can be achieved by moving subregisters consisting of a few ions across the processor. Here, we focus on an architecture, which we refer to as the Quantum Spring Array (QSA), that is based on a rectangular two-dimensional lattice of linear strings of ions. Connectivity between adjacent ion strings can be controlled by adjusting their separation. This requires control of trapping potentials along two directions, one along the axis of the ion string and one radial to it. In this work, we investigate key elements of the QSA architecture along both directions: We show that the coupling rate between neighboring lattice sites increases with the number of ions per site and the motion of the coupled system can be resilient to electrical noise, both being key requisites for fast and high-fidelity quantum gate operations. The coherence of the coupling is assessed and an entangling gate between qubits stored in radially separated trapping regions is demonstrated. Moreover, we demonstrate control over radio-frequency signals to adjust the radial separation, and thus the coupling rate, between strings. We further present constructions for the implementation of parallelized, transversal gate operations, and map the QSA architecture to code primitives for fault-tolerant quantum error correction, providing a step towards a quantum processor architecture that is optimized for large-scale operation.

quant-ph↗

Test and characterization of multilayer ion traps on fused silica

Ion traps are a promising architecture to host a future quantum computer. Several challenges, such as signal-routing, power dissipation, and fabrication quality need to be overcome to scale ion trap devices to hundreds of ions. Currently, ion traps are often fabricated on silicon substrates which result in high power dissipation. Substrates that lead to lower power dissipation are preferred. In this work, we present a multi-metal layer ion trap on a fused silica substrate that is fabricated and tested in an industrial facility. Its design and material-stack are tailored to minimize power dissipation. Furthermore, we characterize the integrated temperature sensors and verify functionality down to 10 K. Moreover, we demonstrate an automated wafer test to validate each trap chip prior to its integration into experimental setups. Subsequently, we characterize electric field noise and electric stray fields using a single trapped-ion as a probe, showing an improvement in trap performance over similar trap designs realized on silicon substrates.

quant-ph↗

Femtosecond laser written waveguides in sapphire for visible light delivery

A promising solution for scalable integrated optics of trapped-ion quantum processors are curved waveguides guiding visible light within sapphire bulk material. To the best of our knowledge, no curved waveguides were investigated in sapphire so far, and no measurements of waveguides with visible light in undoped planar sapphire substrates were reported. Here, we demonstrate femtosecond laser writing of depressed cladding waveguides in sapphire. Laser parameters, such as pulse energy, pulse duration, and repetition rate, as well as waveguide geometry parameters, were optimized to guide 728 nm light. This resulted in single-mode waveguides with a propagation loss of 1.9(3) dB/cm. The investigation of curved waveguides showed a sharp increase in total loss for curvature radii below 15 mm. Our results demonstrate the potential of femtosecond laser writing as a powerful technique for creating integrated optical waveguides in the volume of sapphire substrates. Such waveguides could be a building block for integrated optics in trapped-ion quantum processors.

physics.optics↗

Two-dimensional linear trap array for quantum information processing

We present an ion-lattice quantum processor based on a two-dimensional arrangement of linear surface traps. Our design features a tunable coupling between ions in adjacent lattice sites and a configurable ion-lattice connectivity, allowing one, e.g., to realize rectangular and triangular lattices with the same trap chip. We present detailed trap simulations of a simplest-instance ion array with $2\times9$ trapping sites and report on the fabrication of a prototype device in an industrial facility. The design and the employed fabrication processes are scalable to larger array sizes. We demonstrate trapping of ions in rectangular and triangular lattices and demonstrate transport of a $2\times2$ ion-lattice over one lattice period.

quant-ph↗

Magneto-transport controlled by Landau polariton states

Hybrid excitations, called polaritons, emerge in systems with strong light-matter coupling. Usually, they dominate the linear and nonlinear optical properties with applications in quantum optics. Here, we show the crucial role of the electronic component of polaritons in the magneto-transport of a cavity-embedded 2D electron gas in the ultrastrong coupling regime. We show that the linear dc resistivity is significantly modified by the coupling to the cavity even without external irradiation. Our observations confirm recent predictions of vacuum-induced modification of the resistivity. Furthermore, photo-assisted transport in presence of a weak irradiation field at sub-THz frequencies highlights the different roles of localized and delocalized states.

quant-ph↗

Transport spectroscopy of singlet-triplet quantum dot states coupled to electronic cavities

A strong coupling between an electronic cavity and a quantum dot has been recently demonstrated [Phys. Rev. Lett. 115, 166603 (2015)] and described in a comprehensive theoretical framework [Phys. Rev. B 96, 235431 (2017)]. Here, we focus on the signatures that demonstrate the cavity's impact on inelastic singlet-triplet transport through the dot. We find the same transport signatures in the experiment as predicted by the model that describes the coupled dot--cavity system. Interestingly, a lowest-order treatement of the coupling to the electronic leads on top of an exact diagonalisation of the dot-cavity system is sufficient to highlight the interplay between the cavity and the higher-order inelastic singlet-triplet cotunneling.

cond-mat.mes-hall↗

Long-range spin-coherence in a strongly-coupled all electronic dot-cavity system

We present a theoretical analysis of spin-coherent electronic transport across a mesoscopic dot-cavity system. Such spin-coherent transport has been recently demonstrated in an experiment with a dot-cavity hybrid implemented in a high-mobility two-dimensional electron gas [C. Rössler et al., Phys. Rev. Lett. 115, 166603 (2015)] and its spectroscopic signatures have been interpreted in terms of a competition between Kondo-type dot-lead and molecular-type dot-cavity singlet-formation. Our analysis brings forward all the transport features observed in the experiments and supports the claim that a spin-coherent molecular singlet forms across the full extent of the dot-cavity device. Our model analysis includes: (i) a single-particle numerical investigation of the two-dimensional geometry, its quantum-coral-type eigenstates and associated spectroscopic transport features, (ii) the derivation of an effective interacting model based on the observations of the numerical and experimental studies, and (iii) the prediction of transport characteristics through the device using a combination of a master-equation approach on top of exact eigenstates of the dot-cavity system, and an equation-of-motion analysis that includes Kondo physics. The latter provides additional temperature scaling predictions for the many-body phase transition between molecular- and Kondo-singlet formation and its associated transport signatures.

cond-mat.mes-hall↗

Cavity-mediated coherent coupling between distant quantum dots

Scalable architectures for quantum information technologies require to selectively couple long-distance qubits while suppressing environmental noise and cross-talk. In semiconductor materials, the coherent coupling of a single spin on a quantum dot to a cavity hosting fermionic modes offers a new solution to this technological challenge. Here, we demonstrate coherent coupling between two spatially separated quantum dots using an electronic cavity design that takes advantage of whispering-gallery modes in a two-dimensional electron gas. The cavity-mediated long-distance coupling effectively minimizes undesirable direct cross-talk between the dots and defines a scalable architecture for all-electronic semiconductor-based quantum information processing.

cond-mat.mes-hall↗

Measuring the degeneracy of discrete energy levels using a GaAs/AlGaAs quantum dot

We demonstrate an experimental method for measuring quantum state degeneracies in bound state energy spectra. The technique is based on the general principle of detailed balance, and the ability to perform precise and efficient measurements of energy-dependent tunnelling-in and -out rates from a reservoir. The method is realized using a GaAs/AlGaAs quantum dot allowing for the detection of time-resolved single-electron tunnelling with a precision enhanced by a feedback-control. It is thoroughly tested by tuning orbital and spin-degeneracies with electric and magnetic fields. The technique also lends itself for studying the connection between the ground state degeneracy and the lifetime of the excited states.

cond-mat.mes-hall↗

Non-local polarization feedback in a fractional quantum Hall ferromagnet

In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a non-local effect arising from the interplay between nuclear polarization and the spatial structure of electronic domains in a $ν=2/3$ fractional quantum Hall state. In our experiments, we use a quantum point contact to locally control and probe the domain structure of different spin configurations emerging at the spin phase transition. Feedback between nuclear and electronic degrees of freedom gives rise to memristive behavior, where electronic transport through the quantum point contact depends on the history of current flow. We propose a model for this effect which suggests a novel route to studying edge states in fractional quantum Hall systems and may account for so-far unexplained oscillatory electronic-transport features observed in previous studies.

cond-mat.mes-hall↗

Measurement back-action in stacked graphene quantum dots

We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying a finite bias to one quantum dot, a current is induced in the other unbiased dot. We present an explanation of the observed measurement-induced current based on strong capacitive coupling and energy dependent tunneling barriers, breaking the spatial symmetry in the unbiased system. This is a special feature of graphene-based quantum devices. The experimental observation of transport in classically forbidden regimes is understood by considering higher order quantum mechanical back-action mechanisms.

cond-mat.mes-hall↗

Transport Spectroscopy of a Spin-Coherent Dot-Cavity System

Quantum engineering requires controllable artificial systems with quantum coherence exceeding the device size and operation time. This can be achieved with geometrically confined low-dimensional electronic structures embedded within ultraclean materials, with prominent examples being artificial atoms (quantum dots) and quantum corrals (electronic cavities). Combining the two structures, we implement a mesoscopic coupled dot-cavity system in a high-mobility two-dimensional electron gas, and obtain an extended spin-singlet state in the regime of strong dot-cavity coupling. Engineering such extended quantum states presents a viable route for nonlocal spin coupling that is applicable for quantum information processing.

cond-mat.mes-hall↗

Capacitive coupling in hybrid Graphene-GaAs nanostructures

Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the surface of the heterostructure and therefore allows tuning the electronic density of the 2DEG. Conversely, the 2DEG potential can tune the graphene Fermi energy. Graphene-defined quantum point contacts in the 2DEG show half-plateaus of quantized conductance in finite bias spectroscopy and display the 0.7 anomaly for a large range of densities in the constriction, testifying to their good electronic properties. Finally, we demonstrate that the GaAs nanostructure can detect charges in the vicinity of the heterostructure's surface. This confirms the strong coupling of the hybrid device: localized states in the graphene ribbon could in principle be probed by the underlying confined channel. The present hybrid graphene/GaAs nanostructures are promising for the investigation of strong interactions and coherent coupling between the two fundamentally different materials.

cond-mat.mes-hall↗

Equilibrium free energy measurement of a confined electron driven out of equilibrium

We study out-of equilibrium properties of a quantum dot in a GaAs/AlGaAs two-dimensional electron gas. By means of single electron counting experiments, we measure the distribution of work and dissipated heat of the driven quantum dot and relate these quantities to the equilibrium free energy change, as it has been proposed by C. Jarzynski [Phys. Rev. Lett. {\bf78}, 2690 (1997)]. We discuss the influence of the degeneracy of the quantized energy state on the free energy change as well as its relation to the tunnel rates between the dot and the reservoir.

cond-mat.mes-hall↗

Experimental probe of topological orders and edge excitations in the second Landau level

We measure weak quasiparticle tunneling across a constriction in the second Landau level. At $ν$ = 7/3, 8/3 and 5/2, comparison of temperature and DC bias dependence to weak tunneling theory allows extracting parameters that describe the edges' quasiparticle excitations. At $ν$ = 8/3, our results are well described by a particle-hole conjugate Laughlin state, but not compatible with proposed non-Abelian quasiparticle excitations. For $ν$ = 5/2, our measurements are in good agreement with previous experiments and favor the Abelian (3,3,1) or (1,1,3)-states. At these filling factors, we further investigate the influence of the backscattering strength on the extracted scaling parameters. For $ν$ = 7/3, the backscattering strength strongly affects the scaling parameters, whereas quasiparticle tunneling at $ν$ = 8/3 and 5/2 appears more robust. Our results provide important additional insight about the physics in the second Landau level and contribute to the understanding of the physics underlying the fractional quantum Hall states at $ν$ = 7/3, 8/3 and 5/2.

cond-mat.mes-hall↗

Spectroscopy of Equilibrium and Non-Equilibrium Charge Transfer in Semiconductor Quantum Structures

We investigate equilibrium and non-equilibrium charge-transfer processes by performing high-resolution transport spectroscopy. Using electrostatically defined quantum dots for energy-selective emission and detection, we achieved unprecedented spectral resolution and a high degree of tunability of relevant experimental parameters. Most importantly, we observe that the spectral width of elastically transferred electrons can be substantially smaller than the linewidth of a thermally broadened Coulomb peak. This finding indicates that the charge-transfer process is fast compared to the electron--phonon interaction time. By drawing an analogy to double quantum dots, we argue that the spectral width of the elastic resonance is determined by the lifetime broadening $h\itΓ$ of the emitter and detector states. Good agreement with the model is found also in an experiment in which the charge transfer is in the regime $h\itΓ\gg k_{\rm{B}}T$. By performing spectroscopy below the Fermi energy, we furthermore observe elastic and inelastic transfer of holes.

cond-mat.mes-hall↗