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Cristian Mocuta

Publications and source records attributed to Cristian Mocuta.

2 recordsLinked to original sources

Wide-Surface Furnace for In Situ X-Ray Diffraction of Combinatorial Samples using a High-Throughput Approach

The combinatorial approach applied to functional oxides has enabled the production of material libraries that formally contain infinite compositions. A complete ternary diagram can be obtained by pulsed laser deposition (PLD) on 100 mm silicon wafers. However, interest in such materials libraries is only meaningful if high-throughput characterization enables the information extraction from the as-deposited library in a reasonable time. While much commercial equipment allows for XY-resolved characterization at room temperature, very few sample holders have been made available to investigate structural, chemical, and functional properties at high temperatures in controlled atmospheres. In the present work, we present a furnace that enables the study of 100 mm wafers as a function of temperature. This furnace has a dome to control the atmosphere, typically varying from nitrogen gas to pure oxygen atmosphere with external control. We present the design of such a furnace and an example of X-ray diffraction (XRD) and fluorescence (XRF) measurements performed at the DiffAbs beamline of the SOLEIL synchrotron. We apply this high-throughput approach to a combinatorial library up to 735 {\textdegree}C in nitrogen and calculate the thermal expansion coefficients (TEC) of the ternary system using custom-made MATLAB codes. The TEC analysis revealed the potential limitations of Vegard's law in predicting lattice variations for high-entropy materials.

cond-mat.mtrl-sci

Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon

In a system consisting of two different lattices, the structural stability is ensured when an epitaxial relationship occurs between them and allows the system to retain the stress, avoiding the formation of a polycristalline film. The phenomenon occurs if the film thickness does not exceed a critical value. Here we show that, in spite of its orthorombic structure, a 14nm-thick NiSi layer can three-dimensionally (3D) adapt to the cubic Si lattice by forming transrotational domains. Each domain arises by the continuous bending of the NiSi lattice, maintaining a close relationship with the substrate structure. The presence of transrotational domains does not cause a roughening of the layer but instead it improves the structural and electrical stability of the silicide in comparison with a 24nm-thick layer formed using the same annealing process. These results have relevant implications on thickness scaling of NiSi layers currently used as metallizations of electronic devices.

cond-mat.mtrl-sci