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Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon

Alessandra Alberti·Corrado Bongiorno·Brunella Cafra·Giovanni Mannino·Emanuele Rimini·Till Metzger·Cristian Mocuta·Thorsten Kammler·Thomas Feudel
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Abstract

In a system consisting of two different lattices, the structural stability is ensured when an epitaxial relationship occurs between them and allows the system to retain the stress, avoiding the formation of a polycristalline film. The phenomenon occurs if the film thickness does not exceed a critical value. Here we show that, in spite of its orthorombic structure, a 14nm-thick NiSi layer can three-dimensionally (3D) adapt to the cubic Si lattice by forming transrotational domains. Each domain arises by the continuous bending of the NiSi lattice, maintaining a close relationship with the substrate structure. The presence of transrotational domains does not cause a roughening of the layer but instead it improves the structural and electrical stability of the silicide in comparison with a 24nm-thick layer formed using the same annealing process. These results have relevant implications on thickness scaling of NiSi layers currently used as metallizations of electronic devices.

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Alessandra Alberti, Corrado Bongiorno, Brunella Cafra, Giovanni Mannino, Emanuele Rimini, Till Metzger, Cristian Mocuta, Thorsten Kammler, Thomas Feudel. 2005-10-25. Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon. https://arxiv.org/abs/cond-mat/0510660

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