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D M S Sultan

Publications and source records attributed to D M S Sultan.

8 recordsLinked to original sources

A Reusable Four-Port S-Parameter to Link-Level Signal-Integrity Analysis Framework for High-Speed Detector Interconnects

A reusable MATLAB signal-integrity (SI) framework is presented that converts compatible four-port S-parameter data, measured by VNA or obtained from electromagnetic simulation, into traceable link-level evidence rather than a single loss metric. Its contribution is the checked, traceable automation of established SI operations while keeping source data, model assumptions, analytical projections, and finite-record observations distinct. The framework is demonstrated on the four 1.25 Gbps differential routes (DP1-DP4) of the PPCB-1347-MuPix11 probe card using PTSL CST Microwave 3D-Solver-derived four-port S-parameters and a virtual time-domain solver. The automated pipeline preflights file structures, performs a power-normalized mixed-mode transformation, applies route-length-aware loss decomposition, constructs a causally loaded channel model, and propagates full PRBS-31 sequences into eye-diagram, conditional-BER, and 8b10b-coded-link analyses. At the 1.25 Gbps data rate (Nyquist 0.625 GHz), DP1-DP4 exhibit differential insertion loss (SDD21) from -0.350 to -0.300 dB, differential-to-common conversion from -31.038 to -28.236 dBc, and modeled FEB-input eye openings from 0.586 to 0.588 V. The comparison shows that path length alone is not an adequate SI ranking variable: DP3 has the lowest Nyquist insertion loss, DP1 the strongest differential-to-common isolation, and DP4 the largest modeled eye. All analytical BER values remain below the reporting floor and therefore do not support a BER ranking. By preserving the distinction between route-dependent waveform behavior, model projections, and finite-record observations, the framework provides an extensible basis for comparative high-speed-interconnect SI analysis from design review through calibrated VNA measurement interpretation.

hep-ex

Investigation of the in-pixel response of the Mupix11 monolithic pixel sensor using a microfocus X-ray beam at Diamond Light Source

MuPix11 is a High-Voltage Monolithic Active Pixel Sensor (HV-MAPS) developed for the tracking system of the Mu3e experiment. The in-pixel photon response of a MuPix11 sensor thinned to 70 μm was measured using an 8 keV X-ray beam with a 3 μm spot size at the B16 beamline at Diamond Light Source, emulating the passage of a minimum ionising particle (MIP). At nominal operating voltage and threshold, high-resolution scans across the pixel matrix show the detector response to be uniform. In the absence of reverse bias (0 V), the relative sub-pixel response is location-dependent as a reduced detection rate is observed at pixel boundaries.

physics.ins-det

Quality Control (QC) of FBK Preproduction 3D Si Sensors for ATLAS HL-LHC Upgrades

The challenging demands of the ATLAS High Luminosity (HL-LHC) Upgrade aim for a complete swap of new generation sensors that should cope with the ultimate radiation hardness. FBK has been one of the prime foundries to develop and fabricate such radiation-hard 3D silicon (Si) sensors. These sensors are chosen to be deployed into the innermost layer of the ATLAS Inner Tracker (ITk). Recently, a pre-production batch of 3D Si sensors of 50x50 um2 pixel geometry, compatible with the full-size ITKPix (RD53B) readout chip, was fabricated. Two wafers holding temporary metal were diced at IZM, Germany, and a systematic QC test campaign was carried out at the University of Trento electronics laboratory. The paper briefly describes the 3D Si sensor design for ATLAS ITk and the required QC characterization setups. It comprises electrical tests (i.e., I-V, C-V, and I-T) of non-irradiated RD53B sensors. In addition, the study of several parametric analyses, i.e., oxide charge density, oxide thickness, inter-pixel resistance, inter-pixel capacitance, etc., are reported with the aid of Process Control Monitor (PCM) structures.

physics.ins-det

Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation

In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial CMOS technology. By fully integrating both analog and digital readout-circuitry on the same particle-detecting substrate, current challenges of hybrid sensor technologies, i.e., larger readout input-capacitance, lower production-yield, and higher production and integration cost, can be downscaled. The large electrode design using high-resistivity substrates actively helps to mitigate the charge-trapping effects, making these chips radiation hard. The surface and bulk damage induced in high irradiation environment change the effective doping concentration of the device, which modulates high electric fields as the reverse-bias voltage increases. This effect can cause high leakage current and premature electrical breakdown, driven by impact ionization. In order to assess the characteristics of heavily irradiated samples, we have carried out dedicated campaigns on ATLASPix1 chips that included irradiations of neutrons and protons, made at different facilities. Here, we report on the electrical characterization of the irradiated samples at different ambient conditions, also in comparison to their pre-irradiation properties. Results demonstrate that hadron irradiated devices can be safely operated at a voltage high enough to allow for high efficiency, up to the fluence of 2E15 neq/cm2, beyond the radiation levels (TID and NIEL) expected in the outermost pixel layers of the new ATLAS tracker for HL-LHC.

physics.ins-det

Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC

We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). It is a smaller version of 24 X 36 pixelated sensor in comparison to the earlier generation of ATLASPix1 fabricated in both ams AG, Austria, and TSI Semiconductors, USA. While ams produced ATLASPix2 showed breakdown voltage 50 V in nonirradiated condition as it was seen on its predecessors ATLASpix1, TSI produced prototypes reported breakdown voltage greater than 100 V. The chosen wafer of MCz 20 Ohm.cm P-type substrate resistivity can deplete a few tenths of um, where the process-driven surface damage can have a greater impact on device operating conditions before and after irradiation. In an aim to understand device intrinsic performance at the irradiated case, a dedicated neutron irradiation campaign has been made at JSI for different fluences. Characterizations have been performed at different temperatures after irradiation to analyze the leakage current and breakdown voltage before and after irradiation. TSI prototypes showed a breakdown voltage decrease 90 V due to impact ionization and enhanced effective doping concentration. Results demonstrated for the neutron-irradiated devices up to the fluence of 2 X 10^15 neq/cm2 can still safely be operated at a voltage high enough to allow for high efficiency. Accelerated Annealing steps also made on selective irradiated ATLASPix2 samples, equivalent to more than two years of room-temperature annealing (at 20 degC), and they showed the reassuring expected breakdown voltage increase and damage constant rate alpha^* (geometry dependent) decrease, driven by the beneficial annealing.

physics.ins-det

Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate

In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from $\mathrm{80}$ to $\mathrm{1000~Ω\cdot cm}$. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 80 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.

physics.ins-det

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

physics.ins-det

The INFN-FBK Phase-2 R{\&}D Program

We report on the 3-year INFN ATLAS-CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6-inch p-type wafers. The technology and the design will be optimized and qualified for extreme radiation hardness (2e16 neq cm-2). Pixel layouts compatible with present (for testing) and future (RD53 65nm) front-end chips of ATLAS and CMS are considered. The paper covers the main aspects of the research program, from the sensor design and fabrication technology, to the results of initial tests performed on the first prototypes.

physics.ins-det