arXiv subjects

D. G. Austing

Publications and source records attributed to D. G. Austing.

At least 19 recordsLinked to original sources

arXiv2026

Magnetotransport Spectroscopy of Strongly Rashba-Split Hole Subbands Reveals Many-Body Interactions

We report the results of magnetotransport experiments carried out on low-disorder 2D hole gases (2DHG) in the strongly correlated liquid regime, hosted in dopant-free (100) GaAs/AlGaAs single heterojunctions. Over a wide range of 2DHG densities (from 0.7 $\times$ 10$^{15}$/m$^2$ to $2 \times 10^{15}$/m$^2$), Fourier analysis of low-field (B < 1 T) Shubnikov-de Haas oscillations reveals two spin-orbit-split heavy-hole (HH) subbands with distinct effective masses contributing to transport. Surprisingly, the lighter-mass HH subband exhibits a parabolic dispersion with Fermi wavevector below the anticrossing between the heavy-hole and light-hole subbands, while the heavier HH subband is non-parabolic throughout. Quantitative comparison with numerical calculations based on the Luttinger model reveals that both effective masses are enhanced by a common factor ($\approx$ 2.3), which we attribute to many-body interactions. This common scaling factor has a very weak dependence on the 2DHG density, likely due to band hybridization. Our measured hole masses are compared with published cyclotron resonance and magnetotransport values. We propose a cohesive framework reconciling the long-standing three-way discrepancy between Luttinger theory, magnetotransport, and cyclotron resonance measurements of density-dependent effective masses in partially spin-orbit-polarized heavy-hole systems in GaAs.

cond-mat.mes-hall↗

arXiv2026

Enhanced effective masses, spin-orbit polarization, and dispersion relations in 2D hole gases under strongly asymmetric confinement

The dispersion of Rashba-split heavy-hole subbands in GaAs two-dimensional hole gases (2DHGs) is difficult to access experimentally because strong heavy-hole-light-hole mixing produces non-parabolicity and breaks the usual correspondence between carrier density and Fermi wave vector. Here we use low-field magnetotransport (B < 1 T) to reconstruct the dispersions of the two spin-orbit-split heavy-hole branches (HH-, HH+) in undoped (100) GaAs/AlGaAs single heterojunction 2DHGs operated in an accumulation-mode field-effect geometry. The dopant-free devices sustain out-of-plane electric fields up to 26 kV/cm while maintaining mobilities up to 84 m$^2$/Vs and exhibiting a spin-orbit polarization as large as 36%. Fourier analysis of Shubnikov-de Haas (SdH) oscillations resolves the individual HH-/HH+ subband densities; fitting the temperature dependence of the corresponding Fourier amplitudes yields both branch-resolved SdH effective masses over the same magnetic field window. SdH regimes in which reliable subband parameters can be extracted are delineated. Over 2DHG densities (0.76-1.9) $\times$ 10$^{15}$ /m$^2$, the HH- mass is nearly density independent ($\approx 0.34m_e$), implying a near-parabolic HH- dispersion below the first LH+/HH- anticrossing, whereas HH+ exhibits strong non-parabolicity with an effective mass that increases with density. Combining the extracted dispersions yields a transport-based determination of the spin-orbit splitting energy $Δ_\text{HH}$ between HH and HH+ as a function of in-plane wave vector. Parameter-free Luttinger-model calculations reproduce the qualitative trends but underestimate both masses by a common factor $\approx$ 2, suggesting a many-body renormalization of the heavy-hole mass in this strongly asymmetric regime.

cond-mat.mes-hall↗

arXiv2025

Resonant Magneto-phonon Emission by Supersonic Electrons in Ultra-high Mobility Two-dimensional System

We investigate resonant acoustic phonon scattering in the magneto-resistivity of an ultra-high mobility two-dimensional electron gas system subject to DC current in the temperature range 10 mK to 3.9 K. For a DC current density of $\sim$1.1 A/m, the induced carrier drift velocity $v_{drift}$ becomes equal to the speed of sound $s \sim$ 3 km/s. When $v_{drift} \gtrsim s$ very strong resonant features with only weak temperature dependence are observed and identified as phonon-induced resistance oscillations at and above the "sound barrier". Their behavior contrasts with that in the subsonic regime ($v_{drift} < s$) where resonant acoustic phonon scattering is strongly suppressed when the temperature is reduced unless amplified with quasi-elastic inter-Landau-level scattering. Our observations are compared to recent theoretical predictions from which we can extract a dimensionless electron-phonon coupling constant of $g^{2}$=0.0016 for the strong non-linear transport regime. We find evidence for a predicted oscillation phase change ' effect on traversing the "sound barrier". Crossing the "sound barrier" fundamentally alters the resulting phonon emission processes, and the applied magnetic field results in pronounced and sharp resonant phonon emission due to Landau level quantization.

cond-mat.mes-hall↗

arXiv2021

Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs

Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed.

cond-mat.mes-hall↗

arXiv2021

Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well

The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inter-dot tunneling (leakage) current near zero magnetic field. Spin-blockade due to Pauli exclusion can block inter-dot tunneling. However, this blockade becomes inactive due to hyperfine interaction mediated spin flip-flop processes between electron spin states and the nuclear spin of the host material. The g-factor of absolute value ~0.1 found for a magnetic field parallel to the direction [11(bar)0], is approximately a factor of four lower than that for comparable circuits fabricated from material grown on widely-employed standard (001) GaAs substrates, and is in line with reported values determined by purely optical means for quantum well structures grown on (110) GaAs substrates.

cond-mat.mes-hall↗

arXiv2018

Phase Diagram of Quantum Hall Breakdown and Non-linear Phenomena for InGaAs/InP Quantum Wells

We investigate non-linear magneto-transport in a Hall bar device made from a strained InGaAs/InP quantum well: a material system with attractive spintronic properties. From extensive maps of the longitudinal differential resistance (r_xx) as a function of current and magnetic (B-) field phase diagrams are generated for quantum Hall breakdown in the strong quantum Hall regime reaching filling factor $ν$=1. By careful illumination the electron sheet density (n) is incremented in small steps and this provides insight into how the transport characteristics evolve with n. We explore in depth the energetics of integer quantum Hall breakdown and provide a simple picture for the principal features in the r_xx maps. A simple tunneling model that captures a number of the characteristic features is introduced. Parameters such as critical Hall electric fields and the exchange-enhanced g-factors for odd-filling factors including nu=1 are extracted. A detailed examination is made of the B-field dependence of the critical current as determined by two different methods and compiled for different values of n. A simple rescaling procedure that allows the critical current data points obtained from r_xx maxima for even-filling to collapse on to a single curve is demonstrated. Exchange-enhanced g-factors for odd-filling are extracted from the compiled data and are compared to those determined by conventional thermal activation measurements. The exchange-enhanced g-factor is found to increase with decreasing n.

cond-mat.dis-nn↗

arXiv2014

Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs.

cond-mat.mes-hall↗

arXiv2014

Single Photoelectron Detection after Selective Excitation of Electron-Heavy Hole and Electron-Light Hole Pairs in Double Quantum Dots

We demonstrate the real-time detection of single photogenerated electrons in two different lateral double quantum dots made in AlGaAs/GaAs/AlGaAs quantum wells having a thin or a thick AlGaAs barrier layer. The observed incident laser power and photon energy dependences of the photoelectron detection efficiency both indicate that the trapped photoelectrons are, for the thin barrier sample, predominantly photogenerated in the buffer layer followed by tunneling into one of the two dots, whereas for the thick barrier sample they are directly photogenerated in the well. For the latter, single photoelectron detection after selective excitation of the heavy and light hole state in the dot is well resolved. This ensures the applicability of our quantum well-based quantum dot systems for the coherent transfer from single photon polarization to single electron spin states.

cond-mat.mes-hall↗

arXiv2011

Experimental Phonon Band Structure of Graphene using C$^{12} and C$^{13}$ Isotopes

Using very uniform large scale chemical vapor deposition grown graphene transferred onto silicon, we were able to identify 15 distinct Raman lines associated with graphene monolayers. This was possible thanks to a combination of different carbon isotopes and different Raman laser energies and extensive averaging without increasing the laser power. This allowed us to obtain a detailed experimental phonon dispersion relation for many points in the Brillouin zone. We further identified a D+D' peak corresponding to a double phonon process involving both an inter- and intra-valley phonon.

cond-mat.mes-hall↗

arXiv2010

Transport properties of two laterally coupled vertical quantum dots in series with tunable inter-dot coupling

We describe the electronic properties of a double dot for which the lateral coupling between the two vertical dots can be controlled in-situ with a center gate voltage (Vc) and the current flows through the two dots in series. When Vc is large and positive, the two dots merge. As Vc is made less positive, two dots are formed whose coupling is reduced. We measure charging diagrams for positive and negative source-drain voltages in the weak coupling regime and observe current rectification due to the Pauli spin blockade when the hyperfine interaction between the electrons and the nuclei is suppressed.

cond-mat.mes-hall↗

arXiv2009

Gate Adjustable Coherent Three and Four Level Mixing in a Vertical Quantum Dot Molecule

We study level mixing in the single particle energy spectrum of one of the constituent quantum dots in a vertical double quantum dot by performing magneto-resonant-tunneling spectroscopy. The device used in this study differs from previous vertical double quantum dot devices in that the single side gate is now split into four separate gates. Because of the presence of natural perturbations caused by anharmonicity and anistrophy, applying different combinations of voltages to these gates allows us to alter the effective potential landscape of the two dots and hence influence the level mixing. We present here preliminary results from one three level crossing and one four level crossings high up in the energy spectrum of one of the probed quantum dots, and demonstrate that we are able to change significantly the energy dispersions with magnetic field in the vicinity of the crossing regions.

cond-mat.mes-hall↗

arXiv2008

Accurate Model of a Vertical Pillar Quantum Dot

An accurate model of a vertical pillar quantum dot is described. The full three dimensional structure of the device containing the dot is taken into account and this leads to an effective two dimensional model in which electrons move in the two lateral dimensions, the confinement is parabolic and the interaction potential is very different from the bare Coulomb potential. The potentials are found from the device structure and a few adjustable parameters. Numerically stable calculation procedures for the interaction potential are detailed and procedures for deriving parameter values from experimental addition energy and chemical potential data are described. The model is able to explain magnetic field dependent addition energy and chemical potential data for an individual dot to an accuracy of about 5%, the accuracy level needed to determine ground state quantum numbers from experimental transport data. Applications to excited state transport data are also described.

cond-mat.mes-hall↗

arXiv2007

Two level anti-crossings high up in the single-particle energy spectrum of a quantum dot

We study the evolution with magnetic field of the single-particle energy levels high up in the energy spectrum of one dot as probed by the ground state of the adjacent dot in a weakly coupled vertical quantum dot molecule. We find that the observed spectrum is generally well accounted for by the calculated spectrum for a two-dimensional elliptical parabolic confining potential, except in several regions where two or more single-particle levels approach each other. We focus on two two-level crossing regions which show unexpected anti-crossing behavior and contrasting current dependences. Within a simple coherent level mixing picture, we can model the current carried through the coupled states of the probed dot provided the intrinsic variation with magnetic field of the current through the states (as if they were uncoupled) is accounted for by an appropriate interpolation scheme.

cond-mat.mes-hall↗

arXiv2007

Magnetic field induced effects in the high source-drain bias current of weakly coupled vertical quantum dot molecules

We report on the basic properties of recently observed magnetic field resonance, induced time dependent oscillation, and hysteresis effects in the current flowing through two weakly coupled vertical quantum dots at high source-drain bias (up to a few tens of mV). These effects bare some similarity to those reported in the N=2 spin-blockade regime, usually for weak in-plane magnetic field, of quantum dot molecules and attributed to hyperfine coupling, except here the measurements are conducted outside of the spin-blockade regime and the out-of-plane magnetic field is up to ~6 T.

cond-mat.mes-hall↗

arXiv2007

Many-body excitations in tunneling current spectra of a few-electron quantum dot

Inherent asymmetry in the tunneling barriers of few-electron quantum dots induces intrinsically different tunneling currents for forward and reverse source-drain biases in the non-linear transport regime. Here we show that in addition to spin selection rules, overlap matrix elements between many-body states are crucial for the correct description of tunneling transmission through quantum dots at large magnetic fields. Signatures of excited (N-1)-electron states in the transport process through the N-electron system are clearly identified in the measured transconductances. Our analysis clearly confirms the validity of single-electron quantum transport theory in quantum dots.

cond-mat.mes-hall↗

arXiv2005

Intermediate Low Spin States in a Few-electron Quantum Dot in the $ν\le 1$ Regime

We study the effects of electron-electron interactions in a circular few-electron vertical quantum dot in such a strong magnetic field that the filling factor $ν\le 1$. We measure excitation spectra and find ground state transitions beyond the maximum density droplet ($ν=1$) region. We compare the observed spectra with those calculated by exact diagonalization to identify the ground state quantum numbers, and find that intermediate low-spin states occur between adjacent spin-polarized magic number states.

cond-mat.mes-hall↗

arXiv2005

Spin configurations in circular and rectangular vertical quantum dots in a magnetic field: Three-dimensional self-consistent simulation

The magnetic field dependence of the electronic properties of \textit{real} single vertical quantum dots in circular and rectangular mesas is investigated within a full three-dimensional multiscale self-consistent approach without any {\it á priori} assumptions about the shape and strength of the confinement potential. The calculated zero field electron addition energies are in good agreement with available experimental data for both mesa geometries. Charging diagrams in a magnetic field for number of electrons up to five are also computed. Consistent with the experimental data, we found that the charging curves for the rectangular mesa dot in a magnetic field are flatter and exhibit less features than for a circular mesa dot. Evolution of the singlet-triplet energy separation in the two electron system for both dot geometries in magnetic field was also investigated. In the limit of large field, beyond the singlet-triplet transition, the singlet-triplet energy difference continues to become more negative in a circular mesa dot without any saturation within the range of considered magnetic fields whilst it is predicted to asymptotically approach zero for the rectangular mesa dot. This different behavior is attributed to the symmetry "breaking" that occurs in the singlet wave-functions in the rectangular mesa dot but not in the circular one.

cond-mat.other↗

arXiv2004

Molecular phases in coupled quantum dots

We present excitation energy spectra of few-electron vertically coupled quantum dots for strong and intermediate inter-dot coupling. By applying a magnetic field, we induce ground state transitions and identify the corresponding quantum numbers by comparison with few-body calculations. In addition to atomic-like states, we find novel "molecular-like" phases. The isospin index characterizes the nature of the bond of the artificial molecule and this we control. Like spin in a single quantum dot, transitions in isospin leading to full polarization are observed with increasing magnetic field.

cond-mat.mes-hall↗