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arXiv · 1412.6260

Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

G. Allison·T. Fujita·K. Morimoto·S. Teraoka·M. Larsson·H. Kiyama·A. Oiwa·S. Haffouz·D. G. Austing·A. Ludwig·A. D. Wieck·S. Tarucha
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Abstract

We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs.

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G. Allison, T. Fujita, K. Morimoto, S. Teraoka, M. Larsson, H. Kiyama, A. Oiwa, S. Haffouz, D. G. Austing, A. Ludwig, A. D. Wieck, S. Tarucha. 2014-12-19. Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths. https://doi.org/10.1103/physrevb.90.235310

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