arXiv subjects

D. H. A. Blank

Publications and source records attributed to D. H. A. Blank.

At least 19 recordsLinked to original sources

arXiv2013

Momentum-resolved electronic structure at a buried interface from soft x-ray standing-wave angle-resolved photoemission

Angle-resolved photoemission spectroscopy (ARPES) is a powerful technique for the study of electronic structure, but it lacks a direct ability to study buried interfaces between two materials. We address this limitation by combining ARPES with soft x-ray standing-wave (SW) excitation (SWARPES), in which the SW profile is scanned through the depth of the sample. We have studied the buried interface in a prototypical magnetic tunnel junction La0.7Sr0.3MnO3/SrTiO3. Depth- and momentum-resolved maps of Mn 3d eg and t2g states from the central, bulk-like and interface-like regions of La0.7Sr0.3MnO3 exhibit distinctly different behavior consistent with a change in the Mn bonding at the interface. We compare the experimental results to state-of-the-art density-functional and one-step photoemission theory, with encouraging agreement that suggests wide future applications of this technique.

cond-mat.mtrl-sci↗

arXiv2013

Defect engineering in oxide heterostructures by enhanced oxygen surface exchange

The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, we show that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3-SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. We propose that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.

cond-mat.mtrl-sci↗

arXiv2013

Hard x-ray photoemission and density functional theory study of the internal electric field in SrTiO3/LaAlO3 oxide heterostructures

A combined experimental and theoretical investigation of the electronic structure of the archetypal oxide heterointerface system LaAlO3 on SrTiO3 is presented. High-resolution, hard x-ray photoemission is used to uncover the occupation of Ti 3d states and the relative energetic alignment - and hence internal electric fields - within the LaAlO3 layer. Firstly, the Ti 2p core level spectra clearly show occupation of Ti 3d states already for two unit cells of LaAlO3. Secondly, the LaAlO3 core levels were seen to shift to lower binding energy as the LaAlO3 overlayer thickness, n, was increased - agreeing with the expectations from the canonical electron transfer model for the emergence of conductivity at the interface. However, not only is the energy offset of only 300meV between n=2 (insulating interface) and n=6 (metallic interface) an order of magnitude smaller than the simple expectation, but it is also clearly not the sum of a series of unit-cell by unit-cell shifts within the LaAlO3 block. Both of these facts argue against the simple charge-transfer picture involving a cumulative shift of the LaAlO3 valence bands above the SrTiO3 conduction bands, resulting in charge transfer only for n>3. Turning to the theoretical data, our density functional simulations show that the presence of oxygen vacancies at the LaAlO3 surface at the 25% level reverses the direction of the internal field in the LaAlO3. Therefore, taking the experimental and theoretical results together, a consistent picture emerges for real-life samples in which nature does not wait until n=4 and already for n=2, mechanisms other than internal-electric-field-driven electron transfer from idealized LaAlO3 to near-interfacial states in the SrTiO3 substrate are active in heading off the incipient polarization catastrophe that drives the physics in these systems.

cond-mat.str-el↗

arXiv2012

Quantum oscillations and subband properties of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface

We have performed high field magnetotransport measurements to investigate the interface electron gas in LaAlO3/SrTiO3 heterostructures. Shubnikov-de Haas oscillations reveal several 2D conduction subbands with carrier effective masses between 1 and 3 m_e, quantum mobilities of order 3000 cm^2/V s, and band edges only a few millielectronvolts below the Fermi energy. Measurements in tilted magnetic fields confirm the 2D character of the electron gas, and show evidence of inter-subband scattering.

cond-mat.mtrl-sci↗

arXiv2012

Termination control of NdGaO3 crystal surfaces by selective chemical etching

A chemical etching method was developed for (110) and (001) NdGaO3 single crystal substrates in order to obtain an atomically flat GaO2-x - terminated surface. Depending on the surface step density the substrates were etched in pH-controlled NH4F- or NH4Cl-based solutions, followed by an annealing step at temperatures of 800-1000oC, in air or in oxygen flow, in order to recrystallize the surface. Atomic Force Microscopy (AFM) and high-pressure Reflection High Energy Electron Diffraction (RHEED) were used to analyse the surface morphology of the samples after every treatment. Studies on the chemistry and characteristics of the terminating layer showed that the chemically etched NdGaO3 substrate surface has a GaO2-x termination and that the (110) and (001) NdGaO3 surfaces are characterized by a different free surface energy, which is lower for latter.

cond-mat.mtrl-sci↗

arXiv2010

Misfit Strain Accommodation in Epitaxial ABO3 Perovskites: Lattice Rotations and Lattice Modulations

We present a study of the lattice response to the compressive and tensile biaxial stress in La0.67Sr0.33MnO3 (LSMO) and SrRuO3 (SRO) thin films grown on a variety of single crystal substrates: SrTiO3, DyScO3, NdGaO3 and (La,Sr)(Al,Ta)O3. The results show, that in thin films under misfit strain, both SRO and LSMO lattices, which in bulk form have orthorhombic (SRO) and rhombohedral (LSMO) structures, assume unit cells that are monoclinic under compressive stress and tetragonal under tensile stress. The applied stress effectively modifies the BO6 octahedra rotations, which degree and direction can be controlled by magnitude and sign of the misfit strain. Such lattice distortions change the B-O-B bond angles and therefore are expected to affect magnetic and electronic properties of the ABO3 perovskites.

cond-mat.mtrl-sci↗

arXiv2010

Parallel electron-hole bilayer conductivity from electronic interface reconstruction

The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO$_3$ capping layer prevents structural and chemical reconstruction at the LaAlO$_3$ surface and triggers the electronic reconstruction at a significantly lower LaAlO$_3$ film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.

cond-mat.mtrl-sci↗

arXiv2009

Two-Dimensional Confinement of 3d1 Electrons in LaTiO3/LaAlO3 Multilayers

We report spectroscopic ellipsometry measurements of the anisotropy of the interband transitions parallel and perpendicular to the planes of (LaTiO3)n(LaAlO3)5 multilayers with n = 1-3. These provide direct information about the electronic structure of the two-dimensional (2D) 3d^1 state of the Ti ions. In combination with LDA+U calculations, we suggest that 2D confinement in the TiO2 slabs lifts the degeneracy of the t_{2g} states leaving only the planar d_xy orbitals occupied. We outline that these multilayers can serve as a model system for the study of the t_{2g} 2D Hubbard model.

cond-mat.str-el↗

arXiv2009

Multiple conducting carriers generated in LaAlO3/SrTiO3 heterostructures

We have found that there is more than one type of conducting carriers generated in LaAlO3/SrTiO3 heterostructures by comparing the sheet carrier density and mobility from optical transmission spectroscopy with those from dc-transport measurements. When multiple types of carriers exist, optical characterization dominantly reflects the contribution from the high-density carriers whereas dc-transport measurements may exaggerate the contribution of the high-mobility carriers even though they are present at low-density. Since the low-temperature mobilities determined by dc-transport in the LaAlO3/SrTiO3 heterostructures are much higher than those extracted by optical method, we attribute the origin of high-mobility transport to the low-density conducting carriers.

cond-mat.str-el↗

arXiv2008

Critical thickness and orbital ordering in ultrathin La0.7Sr0.3MnO3 films

Detailed analysis of transport, magnetism and x-ray absorption spectroscopy measurements on ultrathin La0.7Sr0.3MnO3 films with thicknesses from 3 to 70 unit cells resulted in the identification of a lower critical thickness for a non-metallic, non-ferromagnetic layer at the interface with the SrTiO3 (001) substrate of only 3 unit cells (~12 Angstrom). Furthermore, linear dichroism measurements demonstrate the presence of a preferred (x2-y2) in-plane orbital ordering for all layer thicknesses without any orbital reconstruction at the interface. A crucial requirement for the accurate study of these ultrathin films is a controlled growth process, offering the coexistence of layer-by-layer growth and bulk-like magnetic/transport properties.

cond-mat.str-el↗

arXiv2008

Structure-Property Relation of SrTiO3-LaAlO3 Interfaces

A large variety of transport properties have been observed at the interface between the insulating oxides SrTiO3 and LaAlO3 such as insulation, 2D interface metallicity, 3D bulk metallicity, Kondo scattering, magnetism and superconductivity. The relation between the structure and the properties of the SrTiO3-LaAlO3 interface can be explained in a meaningful way by taking into account the relative contribution of three structural aspects: oxygen vacancies, structural deformations (including cation disorder) and electronic interface reconstruction. The emerging phase diagram is much richer than for related bulk oxides due to the occurrence of interface electronic reconstruction. The observation of this interface phenomenon is a display of recent advances in thin film deposition and characterization techniques, and provides an extension to the range of exceptional electronic properties of complex oxides.

cond-mat.str-el↗

arXiv2008

Magnetoresistance oscillations and relaxation effects at the SrTiO3-LaAlO3 interface

We present low-temperature and high-field magnetotransport data on SrTiO3-LaAlO3 interfaces. The resistance shows hysteresis in magnetic field and a logarithmic relaxation as a function of time. Oscillations in the magnetoresistance are observed, showing a square root periodicity in the applied magnetic field, both in large-area unstructured samples as well as in a structured sample. An explanation in terms of a commensurability condition of edge states in a highly mobile two-dimensional electron gas between substrate step edges is suggested.

cond-mat.str-el↗

arXiv2008

Resonant soft x-ray scattering from stepped surfaces of SrTiO3

We studied the resonant diffraction signal from stepped surfaces of SrTiO3 at the Ti 2p -> 3d (L2,3) resonance in comparison with x-ray absorption (XAS) and specular reflectivity data. The steps on the surface form an artificial superstructure suited as a model system for resonant soft x-ray diffraction. A small step density on the surface is sufficient to produce a well defined diffraction peak, showing the high sensitivity of the method. At larger incidence angles, the resonant diffraction spectrum from the steps on the surface resembles the spectrum for specular reflectivity. Both deviate from the XAS data in the relative peak intensities and positions of the peak maxima. We determined the optical parameters of the sample across the resonance and found that the differences between the XAS and scattering spectra reflect the different quantities probed in the different signals. When recorded at low incidence or detection angles, XAS and specular reflectivity spectra are distorted by the changes of the angle of total reflection with energy. Also the step peak spectra, though less affected, show an energy shift of the peak maxima in grazing incidence geometry.

cond-mat.str-el↗

arXiv2007

Preparation and properties of amorphous MgB$_2$/MgO superstructures: A new model disordered superconductor

In this paper we introduce a novel method for fabricating MgB$_2$/MgO multilayers and demonstrate the potential for using them as a new model for disordered superconductors. In this approach we control the annealing of the MgB$_2$ to yield an interesting new class of disordered (amorphous) superconductors with relatively high transition temperatures. The multilayers appear to exhibit quasi-two-dimensional superconductivity with controlled anisotropy. We discuss the properties of the multilayers as the thickness of the components of the bilayers vary.

cond-mat.supr-con↗

arXiv2007

Smallest 90o domains in epitaxial ferroelectric films

Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed interest was partly fuelled by the observation of ferroelectric domains in films of a few unit cells thickness, promising further size reduction of ferroelectric devices. It turns out that at reduced scales and dimensionalities the material's properties depend crucially on the intricacies of domain formation, that is, the way the crystal splits into regions with polarization oriented along the different energetically equivalent directions, typically at 180o and 90o from each other. Here we present a step forward in the manipulation and control of ferroelectric domains by the growth of thin films with regular self-patterned arrays of 90o domains only 7 nm wide. This is the narrowest width for 90o domains in epitaxial ferroelectrics that preserves the film lateral coherence, independently of the substrate.

cond-mat.mtrl-sci↗

arXiv2007

Magnetic effects at the interface between nonmagnetic oxides

The electronic reconstruction at the interface between two insulating oxides can give rise to a highly-conductive interface. In analogy to this remarkable interface-induced conductivity we show how, additionally, magnetism can be induced at the interface between the otherwise nonmagnetic insulating perovskites SrTiO3 and LaAlO3. A large negative magnetoresistance of the interface is found, together with a logarithmic temperature dependence of the sheet resistance. At low temperatures, the sheet resistance reveals magnetic hysteresis. Magnetic ordering is a key issue in solid-state science and its underlying mechanisms are still the subject of intense research. In particular, the interplay between localized magnetic moments and the spin of itinerant conduction electrons in a solid gives rise to intriguing many-body effects such as Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions, the Kondo effect, and carrier-induced ferromagnetism in diluted magnetic semiconductors. The conducting oxide interface now provides a versatile system to induce and manipulate magnetic moments in otherwise nonmagnetic materials.

cond-mat.str-el↗

arXiv2006

Experiments using high-Tc/low-Tc Josephson contacts

Remarkably rich physics is involved in the behavior of hybrid Josephson junctions, connecting high-Tc and low-Tc superconductors. This relates in particular to the different order parameter symmetries underlying the formation of the superconducting states in these materials. Experiments on high-Tc/low-Tc contacts have also played a crucial role in settling the decade-long d-wave versus s-wave debate in cuprate superconductors. Recently, such hybrid junctions have enabled more detailed pairing symmetry tests. Furthermore, with these junctions, complex arrays of pi-rings have been realized, enabling studies on spontaneously generated fractional flux quanta and their mutual interactions. Steps toward novel superconducting electronic devices are taken, utilizing the phase-shifts inherent to the d-wave superconducting order parameter. This paper is intended to reflect the current status of experiments using high-Tc and low-Tc Josephson contacts.

cond-mat.supr-con↗

arXiv2006

Polar domains in lead titanate films under tensile strain

Thin films of PbTiO3, a classical ferroelectric, have been grown under tensile strain on single-crystal substrates of DyScO3. The films, of only 5nm thickness, grow fully coherent with the substrate and show no crystallographic twin domains, as evidenced by synchrotron x-ray diffraction. A mapping of the reciprocal space reveals intensity modulations (satellites) due to regularly-spaced polar domains in which the polarization appears rotated away from the substrate normal, characterizing a low symmetry phase not observed in the bulk material. This could have important practical implications since these phases are known to be responsible for ultrahigh piezoelectric responses in complex systems.

cond-mat.mtrl-sci↗