arXiv subjects

D. H. A. Blank

Publications and source records attributed to D. H. A. Blank.

24 records · Page 2Linked to original sources

arXiv2006

Study of Correlation Effects in the High Formal Oxidation State Compound Sr$_2$CoO$_4$

Two recent reports confirm that the newly synthesized Sr$_2$CoO$_4$ (formal oxidation state Co$^{4+}$) shows a high Curie temperature (~ 250 K), but they report different moments of 1.8 $μ_B$ and 1 $μ_B$ per Co. Using both commonly used functionals in the correlated band approach (LDA+U) as well as the local density approximation (LDA),the combined effects of correlation and hybridization with O 2p states are calculated and analyzed. Sr$_2$CoO$_2$ is already ferromagnetic within LDA (M=1.95 $μ_B$). Increasing U from zero, the two LDA+U schemes affect the moment oppositely out to a critical value $U_c$=2.5 eV, at which point they transform discontinuously from different states to the same large U state. Fixing U at $U_c$, fixed spin moment calculations show similar behavior out to a minimum at 1$μ_B$ (a half metallic state), beyond which the fully-localized-limit scheme jumps to a state with energy minimum very near 2$μ_B$ very close to the LDA moment). Although the energy minima occur very near integer values of the moment/Co (1$μ_B, 2$μ_B$), the strong 3d-2p mixing and resulting 3d orbital occupations seem to preclude any meaningful S=1/2 or S=1 assignment to the Co ion.

cond-mat.str-el↗

arXiv2005

Admixtures to d-wave gap symmetry in untwinned YBa2Cu3O7 superconducting films measured by angle-resolved electron tunneling

We report on an \textit{ab}-anisotropy of $J_{c \parallel b}/J_{c \parallel a}% \cong 1.8$ and $I_{c}R_{n \parallel b}/I_{c}R_{n \parallel a}\cong 1.2$ in ramp-edge junctions between untwinned YBa$_{2}$Cu$_{3}$O$_{7}$ and $s$% -wave Nb. For these junctions, the angle $θ$ with the YBa$_{2}$Cu$_{3}$O$_{7}$ crystal b-axis is varied as a single parameter. The $R_{n}$A($θ$)-dependence presents 2-fold symmetry. The minima in $I_{c}R_{n}$ at $θ\cong 50^{\circ}$ suggest a real s-wave subdominant component and negligible $d_{xy}$-wave or imaginary s-wave admixtures. The $I_{c}R_{n}$($θ$)-dependence is well-fitted by 83% $d_{x^{2}-y^{2}}$-, 15% isotropic $s$- and 2% anisotropic s-wave order parameter symmetry, consistent with $Δ_{b}/Δ_{a} \cong 1.5$.

cond-mat.supr-con↗

arXiv2005

Phase-sensitive order parameter symmetry test experiments utilizing Nd2-xCexCuO4-y/Nb zigzag junctions

Phase-sensitive order parameter symmetry test experiments are presented on the electron-doped high-T_c cuprate Nd2-xCexCuO4-y. These experiments have been conducted using zigzag-shaped thin film Josephson structures, in which the Nd2-xCexCuO4-y is connected to the low-T_c superconductor Nb via a Au barrier layer. For the optimally doped as well as for the overdoped Nd2-xCexCuO4-y a clear predominant dx2-y2-wave behavior is observed at T=4.2K. Both compounds were also investigated at T=1.6K, presenting no indications for a change to a predominant s-wave symmetry with decreasing temperature.

cond-mat.str-el↗

arXiv2001

Superconducting Quantum Interference Device based on MgB2 nanobridges

The recently discovered superconductor MgB2, with a transition temperature of 39K, has significant potential for future electronics. An essential step is the achievement of Josephson circuits, of which the superconducting quantum interference device (SQUID) is the most important. Here, we report Josephson quantum interference in superconducting MgB2 thin films. Modulation voltages of up to 30 microvolt are observed in an all-MgB2 SQUID, based on focused ion beam patterned nanobridges. These bridges, with a length scale < 100 nm, have outstanding critical current densities of 7 x 10^6 A/cm2 at 4.2 K.

cond-mat.supr-con↗

arXiv2001

Superconducting Mg-B films by pulsed laser deposition in an in-situ two-step process using multi-component targets

Superconducting thin films have been prepared in a two-step in-situ process, using the Mg-B plasma generated by pulsed laser ablation. The target was composed of a mixture of Mg and MgB2 powders to compensate for the volatility of Mg and therefore to ensure a high Mg content in the film. The films were deposited at temperatures ranging from room temperature to 300 degrees C followed by a low-pressure in-situ annealing procedure. Various substrates have been used and diverse ways to increase the Mg content into the film were applied. The films show a sharp transition in the resistance and have a zero resistance transition temperature of 22-24 K.

cond-mat.supr-con↗

arXiv2001

Superconducting thin films of MgB2 on (001)-Si by pulsed laser deposition

Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and post-annealed at 600 degrees C. The zero resistance transition temperatures were 12 K, with an onset transition temperature of 27 K. Special care has been taken to avoid oxidation of Mg in the laser plasma and deposited film, by optimizing the background pressure of Ar gas in the deposition chamber. For this the optical emission in the visible range from the plasma has been used as indicator. Preventing Mg from oxidation was found to be essential to obtain superconducting films.

cond-mat.supr-con↗