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D. Hrabovsky

Publications and source records attributed to D. Hrabovsky.

5 recordsLinked to original sources

Anomalous charge transport of superconducting Cu$_{x}$PdTe$_2$ under high pressure

By means of high-pressure resistivity measurements on single crystals, we investigate the charge transport properties of Cu$_x$PdTe$_2$, notable for the combination of topological type-II Dirac semimetallic properties with superconductivity up to $T_c = 2.5$ K. In both cases of pristine ($x = 0$) and intercalated ($x=0.05$) samples, we find an unconventional $T^4$ power law behavior of the low-temperature resistivity visible up to $\sim$40 K and remarkably stable under pressure up to 8.2 GPa. This observation is explained by the low carrier density $n$, which strongly reduces the $k$-region available for electron-phonon scattering, as previously reported in other low-$n$ two-dimensional systems, such as multilayer graphene and semiconductor heterostructures. Our data analysis complemented by specific heat measurements and supported by previous quantum oscillation studies and \textit{ab initio} calculations suggests a scenario of one-band charge transport. Within this scenario, our analysis yields a large value of transport electron-phonon coupling constant $\lambda_{tr} = 1.2$ at ambient pressure that appears to be strongly enhanced by pressure assuming a constant effective mass.

cond-mat.supr-con

Electric field effects on magnetotransport properties of multiferroic Py/YMnO3/Pt heterostructures

We report on the exchange bias between antiferromagnetic and ferroelectric hexagonal YMnO3 epitaxial thin films sandwiched between a metallic electrode (Pt) and a soft ferromagnetic layer (Py). Anisotropic magnetoresistance measurements are performed to monitor the presence of an exchange bias field. When the heteroestructure is biased by an electric field, it turns out that the exchange bias field is suppressed. We discuss the dependence of the observed effect on the amplitude and polarity of the electric field. Particular attention is devoted to the role of current leakage across the ferroelectric layer.

cond-mat.str-el

Exchange biasing and electric polarization with YMnO3

We report on the growth and functional characterization of epitaxial thin films of the multiferroic YMnO3. We show that using Pt as a seed layer on SrTiO3(111) substrates, epitaxial YMnO3 films (0001) textured are obtained. An atomic force microscope has been used to polarize electric domains revealing the ferroelectric nature of the film. When a Permalloy layer is grown on top of the YMnO3(0001) film, clear indications of exchange bias and enhanced coercivity are observed at low temperature. The observation of coexisting antiferromagnetism and electrical polarization suggests that the biferroic character of YMnO3 can be exploited in novel devices.

cond-mat.str-el

Electric field control of exchange bias in multiferroic epitaxial heterostructures

The magnetic exchange bias between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the ferromagnetic layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an appropriate electric field allows modifying and controlling the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to pave the way towards a new generation of electric-field controlled spintronics devices.

cond-mat.str-el

Magnetization of ultrathin (Ga,Mn)As layers

Kerr rotation and Superconducting QUantum Interference Device (SQUID) magnetometry measurements were performed on ultrathin (Ga$_{0.95}$Mn$_{0.05}$)As layers. The thinner layers (below 250 Å) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled-magnetization of the layers is recorded after successive low temperature annealings. While the Curie temperature of the thicker layer (250 Å) is nearly unchanged, the critical temperature of the thinner layers is enhanced by more than 23 K after two annealings. Secondary Ion Mass Spectrometry (SIMS) experiments on similar layers show that Mn is displaced upon annealing. The results are discussed considering a possible segregation of substitutional and interstitial Mn atoms at the surface of the (Ga,Mn)As layers.

cond-mat.mtrl-sci