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Electric field control of exchange bias in multiferroic epitaxial heterostructures

V. Laukhin·V. Skumryev·X. Marti·D. Hrabovsky·F. Sanchez·M. V. Garcia-Cuenca·C. Ferrater·M. Varela·U. Luders·J. F. Bobo·J. Fontcuberta
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Abstract

The magnetic exchange bias between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the ferromagnetic layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an appropriate electric field allows modifying and controlling the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to pave the way towards a new generation of electric-field controlled spintronics devices.

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V. Laukhin, V. Skumryev, X. Marti, D. Hrabovsky, F. Sanchez, M. V. Garcia-Cuenca, C. Ferrater, M. Varela, U. Luders, J. F. Bobo, J. Fontcuberta. 2006-07-14. Electric field control of exchange bias in multiferroic epitaxial heterostructures. https://doi.org/10.1103/physrevlett.97.227201

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